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    TL125 Search Results

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    TL125 Price and Stock

    NXP Semiconductors NT2H0301F0DTL,125

    IC RFID TRANSP 13.56MHZ 4HXSON
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NT2H0301F0DTL,125 Cut Tape 4,040 1
    • 1 $1.11
    • 10 $0.989
    • 100 $0.7715
    • 1000 $0.50313
    • 10000 $0.50313
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    Avnet Americas NT2H0301F0DTL,125 Reel 4 Weeks 753
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    Newark NT2H0301F0DTL,125 Cut Tape 1
    • 1 $1.08
    • 10 $0.895
    • 100 $0.708
    • 1000 $0.624
    • 10000 $0.624
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    Rochester Electronics NT2H0301F0DTL,125 63,000 1
    • 1 $0.4843
    • 10 $0.4843
    • 100 $0.4552
    • 1000 $0.4117
    • 10000 $0.4117
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    Avnet Silica NT2H0301F0DTL,125 18 Weeks 4,000
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    EBV Elektronik NT2H0301F0DTL,125 18 Weeks 4,000
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    E-Switch Inc TL1250F280ARN

    SWITCH TACTILE SPST-NO 0.05A 12V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TL1250F280ARN Tray 1,088 1
    • 1 $2.09
    • 10 $1.702
    • 100 $1.3765
    • 1000 $1.1056
    • 10000 $0.94516
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    Mouser Electronics TL1250F280ARN
    • 1 -
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    • 1000 $1.13
    • 10000 $0.954
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    Newark TL1250F280ARN Bulk 800
    • 1 $1.7
    • 10 $1.7
    • 100 $1.7
    • 1000 $1.7
    • 10000 $1.38
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    TME TL1250F280ARN 800
    • 1 -
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    • 1000 $1.19
    • 10000 $1.19
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    STMicroelectronics STL125N10F8AG

    AUTOMOTIVE N-CHANNEL 100 V, 4.6
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey STL125N10F8AG Cut Tape 976 1
    • 1 $2.96
    • 10 $2.663
    • 100 $2.1405
    • 1000 $1.45718
    • 10000 $1.45718
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    Avnet Americas STL125N10F8AG 26 Weeks 3,000
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    Newark STL125N10F8AG Cut Tape 1
    • 1 $2.95
    • 10 $2.46
    • 100 $2.46
    • 1000 $2.46
    • 10000 $2.46
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    STMicroelectronics STL125N10F8AG 766 1
    • 1 $2.89
    • 10 $2.41
    • 100 $1.91
    • 1000 $1.61
    • 10000 $1.61
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    Air Electro Inc CTL-12-513

    CONNECTOR
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CTL-12-513 Bag 800 1
    • 1 $34.1
    • 10 $33.481
    • 100 $30.189
    • 1000 $26.303
    • 10000 $26.303
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    E-Switch Inc TL1250F180GRRCLR

    SWITCH TACTILE SPST-NO 0.05A 12V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TL1250F180GRRCLR Tray 635 1
    • 1 $3.35
    • 10 $2.721
    • 100 $2.225
    • 1000 $2.225
    • 10000 $2.225
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    Mouser Electronics TL1250F180GRRCLR 682
    • 1 $3.03
    • 10 $2.66
    • 100 $2.55
    • 1000 $2.55
    • 10000 $2.55
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    Bristol Electronics TL1250F180GRRCLR 271
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    TME TL1250F180GRRCLR 600
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    • 1000 $4.05
    • 10000 $4.05
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    Find more TL125 price and stock on Findchips.com

    TL125 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TL1250F120BQRCLR E-SWITCH Tactile Switches, Switches, SWITCH TACTILE ILLUMINATED Original PDF
    TL1250F180AQRCLR E-Switch Switches - Tactile Switches - SWITCH TACTILE SPST-NO 0.05A 12V Original PDF
    TL1250F180BQRCLR E-SWITCH Tactile Switches, Switches, SWITCH TACTILE SPST-NO 0.05A 12V Original PDF
    TL1250F180BRRCLR E-SWITCH Tactile Switches, Switches, SWITCH TACTILE SPST-NO 0.05A 12V Original PDF
    TL1250F180GQRCLR E-SWITCH Tactile Switches, Switches, SWITCH TACTILE SPST-NO 0.05A 12V Original PDF
    TL1250F180GRRCLR E-SWITCH Tactile Switches, Switches, SWITCH TACTILE SPST-NO 0.05A 12V Original PDF
    TL1250F180RQRCLR E-SWITCH Tactile Switches, Switches, SWITCH TACTILE SPST-NO 0.05A 12V Original PDF
    TL1250F180RRRCLR E-SWITCH Tactile Switches, Switches, SWITCH TACTILE SPST-NO 0.05A 12V Original PDF
    TL1250F280ARN E-Switch Switches - Tactile Switches - SWITCH TACTILE SPST-NO 0.05A 12V Original PDF
    TL1250F280BQRCLR E-SWITCH Tactile Switches, Switches, SWITCH TACTILE SPST-NO 0.05A 12V Original PDF
    TL1250F280BRRCLR E-SWITCH Tactile Switches, Switches, SWITCH TACTILE SPST-NO 0.05A 12V Original PDF
    TL1250F280GQRCLR E-SWITCH Tactile Switches, Switches, SWITCH TACTILE SPST-NO 0.05A 12V Original PDF
    TL1250F280GRRCLR E-SWITCH Tactile Switches, Switches, SWITCH TACTILE SPST-NO 0.05A 12V Original PDF
    TL1250F280RQRCLR E-SWITCH Tactile Switches, Switches, SWITCH TACTILE SPST-NO 0.05A 12V Original PDF
    TL1250F280RRRCLR E-SWITCH Tactile Switches, Switches, SWITCH TACTILE SPST-NO 0.05A 12V Original PDF
    TL-1250NE Terasaki Electric Circuit Breaker, 3 Poles | 4 Poles, 690VAC, 1250A Original PDF

    TL125 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TL205

    Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147
    Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's


    Original     		PDF PTFC260202FC PTFC260202FC 10-watt H-37248-4 TL205 TL2322 RO4350 tl233 tl241 587-1818-2-ND c201 017 C202 tl147

    transistor TL131

    Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND
    Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PDF PTFB212507SH PTFB212507SH 200-watt H-34288G-4/2 transistor TL131 TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 LM78L05ACMND

    tl249

    Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242
    Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6, H-34288-6, tl249 tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 tl250 TL242

    XS250NJ

    Abstract: tembreak xs250nj terasaki circuit breaker XH125NJ XS800SE XS125NJ XS1250SE XS1600SE AT 25 terasaki XS630NJ XS630CJ
    Text: Innovators in Protection Technology Manual transfer switches 3 and 4 pole 9 MCCBs used Ampere Range XS125CJ XS125CJ XS125CJ XS125NJ XS125NJ XS125NJ XH125NJ XH125NJ XH125NJ XH125PJ XH125PJ XH125PJ XH160PJ XS250NJ XS250NJ XH250NJ XH250NJ XS400CJ XS400CJ XS400NJ


    Original     		PDF XS125CJ XS125NJ XH125NJ XH125PJ XS250NJ tembreak xs250nj terasaki circuit breaker XH125NJ XS800SE XS125NJ XS1250SE XS1600SE AT 25 terasaki XS630NJ XS630CJ

    Untitled

    Abstract: No abstract text available
    Text: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.


    Original     		PDF PTFA091503EL PTFA091503EL 150-watt, H-33288-6

    LM7805ACH-ND

    Abstract: TL174 tl173 PTVA035002EV V1
    Text: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features


    Original     		PDF PTVA035002EV PTVA035002EV H-36275-4 a035002 50stances. LM7805ACH-ND TL174 tl173 PTVA035002EV V1

    C109 ceramic capacitor

    Abstract: TL235
    Text: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PDF PTFB213208FV PTFB213208SV 320-watt H-34275G-6/2 C109 ceramic capacitor TL235

    PTFB212507SH

    Abstract: No abstract text available
    Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110


    Original     		PDF PTFB212507SH PTFB212507SH 200-watt

    TRANSISTOR tl131

    Abstract: tl239
    Text: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include


    Original     		PDF PTFB082817FH PTFB082817FH H-34288-4/2 TRANSISTOR tl131 tl239

    C205

    Abstract: No abstract text available
    Text: PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications


    Original     		PDF PTFB191501E PTFB191501F PTFB191501E PTFB191501F 150-watt H-36248-2 H-37248-2 C205

    PTFB090901EA

    Abstract: No abstract text available
    Text: PTFB090901EA PTFB090901FA Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced


    Original     		PDF PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2

    TL272

    Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148
    Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use


    Original     		PDF PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 TL272 TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148

    PTFB090901

    Abstract: TL127 PTFB090901EA 569w PTFB090901FA 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801
    Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB090901EA PTFB090901FA PTFB090901FA 90-watt H-36265-2 H-37265-2 PTFB090901 TL127 569w 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801

    TL145

    Abstract: TL245 transistor c111 C216 TL152
    Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960


    Original     		PDF PTFB093608FV PTFB093608FV H-37275-6/2 TL145 TL245 transistor c111 C216 TL152

    TRANSISTOR tl131

    Abstract: tl134 PTFB212503FL tl127 TL234 TL107 tl117 atc100b6r2 tl227 c103 TRANSISTOR DATA
    Text: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power


    Original     		PDF PTFB212503EL PTFB212503FL PTFB212503EL PTFB212503FL 240-watt TRANSISTOR tl131 tl134 tl127 TL234 TL107 tl117 atc100b6r2 tl227 c103 TRANSISTOR DATA

    PTFB090901EA

    Abstract: No abstract text available
    Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2

    TL139

    Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145
    Text: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


    Original     		PDF PTFB183404F PTFB183404F 340-watt H-37275-6/2 TL139 PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145

    PTFB192503EL

    Abstract: ATC100A8R2BW150XB c103 TRANSISTOR tl131 TRANSISTOR c104 C802 C803 R250 587-1818-2-ND TL231
    Text: PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB192503EL PTFB192503FL PTFB192503EL PTFB192503FL 240-watt H-33288-6 H-34288-4/2 ATC100A8R2BW150XB c103 TRANSISTOR tl131 TRANSISTOR c104 C802 C803 R250 587-1818-2-ND TL231

    PTFB192503EL V1

    Abstract: No abstract text available
    Text: PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power ampliier


    Original     		PDF PTFB192503EL PTFB192503FL PTFB192503EL PTFB192503FL 240-watt H-33288-6 H-34288-4/2 PTFB192503EL V1

    TL107 linear

    Abstract: TRANSISTOR tl131
    Text: PTFB182557SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 250 W, 28 V, 1805 – 1880 MHz Description The PTFB182557SH is a 250-watt LDMOS FET speciically designed for use in Doherty cellular power ampliier applications in the 1805


    Original     		PDF PTFB182557SH PTFB182557SH 250-watt H-34288G-4/2 TL107 linear TRANSISTOR tl131

    PTFB212503FL

    Abstract: No abstract text available
    Text: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power


    Original     		PDF PTFB212503EL PTFB212503FL PTFB212503EL PTFB212503FL 240-watt H-33288-6 H-34288-4/2

    TRANSISTOR tl131

    Abstract: No abstract text available
    Text: PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 – 2170 frequency band. Features include


    Original     		PDF PTFB211501E PTFB211501F PTFB211501E PTFB211501F 150-watt, H-36248-2 H-37248-2 TRANSISTOR tl131

    TF800BB14-061

    Abstract: P1999 8051 microwave oven ec 9410 cf K 2676 9343-11R1 TF800BA14-061 2320-1SL 9816SL 9410-3SL-1
    Text: < ] ^  _dZkijho$@e^Wdied^Wibed]X[[dh[Ye]d_p[ZWiW $ J^[jhWZ_j_edYedj_dk[i°


    Original     		PDF JK-943L 9343-11R1 9343-12R1 9343-13R1 9343-14R1 9343-16R1 9343-18R1 JK-943H TF800BB14-061 P1999 8051 microwave oven ec 9410 cf K 2676 9343-11R1 TF800BA14-061 2320-1SL 9816SL 9410-3SL-1

    TL300

    Abstract: TL65
    Text: tozu -profile t 2l C O M P A T IB L E Mini Dl LO G IC DELAY DULE _ f # T2L Input and outputs all m odules is 4ns m axim um w hen m easured from 0.8V to # Delays stable and precise 2.0V . T e m p e ra tu re co e fficie n t o f delay is approxim ately +500


    OCR Scan     		PDF 500ns 1001YP. 100TYP C/103092 TL300 TL65