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NXP Semiconductors NT2H0301F0DTL,125 IC RFID TRANSP 13.56MHZ 4HXSON
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NT2H0301F0DTL,125	Cut Tape	4,040		1	1 $0.99 10 $0.712 100 $0.566 1000 $0.48938 10000 $0.48938	Buy Now
	NT2H0301F0DTL,125	Digi-Reel	4,040		1	1 $0.99 10 $0.712 100 $0.566 1000 $0.48938 10000 $0.48938	Buy Now
Newark	NT2H0301F0DTL,125	Cut Tape			1	1 $1.08 10 $0.895 100 $0.708 1000 $0.493 10000 $0.493	Buy Now
	NT2H0301F0DTL,125	Reel			4,000	1 - 10 - 100 - 1000 - 10000 $0.499	Buy Now
Rochester Electronics	NT2H0301F0DTL,125		274,337		1	1 $0.4613 10 $0.4613 100 $0.4336 1000 $0.3921 10000 $0.3921	Buy Now
Avnet Silica	NT2H0301F0DTL,125			18 Weeks	4,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	NT2H0301F0DTL,125			18 Weeks	4,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
E-Switch Inc TL1250F280ARN SWITCH TACTILE SPST-NO 0.05A 12V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TL1250F280ARN	Tray	1,088		1	1 $2.09 10 $1.702 100 $1.3765 1000 $1.1056 10000 $0.94516	Buy Now
Mouser Electronics	TL1250F280ARN					1 - 10 - 100 - 1000 $1.1 10000 $0.945	Get Quote
Newark	TL1250F280ARN	Bulk			800	1 $1.7 10 $1.7 100 $1.7 1000 $1.7 10000 $1.38	Buy Now
TME	TL1250F280ARN				800	1 - 10 - 100 - 1000 $1.19 10000 $1.19	Get Quote
Essentra Components STL-1-250-3-01 CBL CLIP TWIST LOCK NAT ARROW
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STL-1-250-3-01	Bulk	952		1	1 $0.37 10 $0.285 100 $0.2178 1000 $0.16821 10000 $0.14956	Buy Now
Newark	STL-1-250-3-01	Bulk	416		1	1 $0.043 10 $0.043 100 $0.043 1000 $0.043 10000 $0.043	Buy Now
DB Roberts	STL-1-250-3-01		2,290			1 $0.3231 10 $0.3231 100 $0.227 1000 $0.1474 10000 $0.1474	Buy Now
E-Switch Inc TL1250F180BQRCLR SWITCH TACTILE SPST-NO 0.05A 12V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TL1250F180BQRCLR	Tray	589		1	1 $4.99 10 $4.046 100 $3.2638 1000 $2.61166 10000 $2.39281	Buy Now
Mouser Electronics	TL1250F180BQRCLR		334			1 $3.86 10 $3.72 100 $3.02 1000 $2.39 10000 $2.39	Buy Now
Newark	TL1250F180BQRCLR	Bulk			600	1 $4.16 10 $4.16 100 $4.16 1000 $4.16 10000 $3.51	Buy Now
Bristol Electronics	TL1250F180BQRCLR		17			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TME	TL1250F180BQRCLR				600	1 - 10 - 100 - 1000 $4.64 10000 $4.64	Get Quote

Master Electronics	TL1250F180BQRCLR		54			1 - 10 $4.65 100 $2.9 1000 $2.52 10000 $2.52	Buy Now
E-Switch Inc TL1250F180GRRCLR SWITCH TACTILE SPST-NO 0.05A 12V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TL1250F180GRRCLR	Tray	562		1	1 $3.35 10 $2.721 100 $2.225 1000 $2.225 10000 $2.225	Buy Now
Mouser Electronics	TL1250F180GRRCLR		483			1 $3.26 10 $2.55 100 $2.55 1000 $2.55 10000 $2.55	Buy Now
Bristol Electronics	TL1250F180GRRCLR		271			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TME	TL1250F180GRRCLR				600	1 - 10 - 100 - 1000 $4.05 10000 $4.05	Get Quote

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TL125 Datasheets (16)

Part	Manufacturer	Description	Datasheet Type	PDF
TL1250F120BQRCLR	E-SWITCH	Tactile Switches, Switches, SWITCH TACTILE ILLUMINATED	Original	PDF
TL1250F180AQRCLR	E-Switch	Switches - Tactile Switches - SWITCH TACTILE SPST-NO 0.05A 12V	Original	PDF
TL1250F180BQRCLR	E-SWITCH	Tactile Switches, Switches, SWITCH TACTILE SPST-NO 0.05A 12V	Original	PDF
TL1250F180BRRCLR	E-SWITCH	Tactile Switches, Switches, SWITCH TACTILE SPST-NO 0.05A 12V	Original	PDF
TL1250F180GQRCLR	E-SWITCH	Tactile Switches, Switches, SWITCH TACTILE SPST-NO 0.05A 12V	Original	PDF
TL1250F180GRRCLR	E-SWITCH	Tactile Switches, Switches, SWITCH TACTILE SPST-NO 0.05A 12V	Original	PDF
TL1250F180RQRCLR	E-SWITCH	Tactile Switches, Switches, SWITCH TACTILE SPST-NO 0.05A 12V	Original	PDF
TL1250F180RRRCLR	E-SWITCH	Tactile Switches, Switches, SWITCH TACTILE SPST-NO 0.05A 12V	Original	PDF
TL1250F280ARN	E-Switch	Switches - Tactile Switches - SWITCH TACTILE SPST-NO 0.05A 12V	Original	PDF
TL1250F280BQRCLR	E-SWITCH	Tactile Switches, Switches, SWITCH TACTILE SPST-NO 0.05A 12V	Original	PDF
TL1250F280BRRCLR	E-SWITCH	Tactile Switches, Switches, SWITCH TACTILE SPST-NO 0.05A 12V	Original	PDF
TL1250F280GQRCLR	E-SWITCH	Tactile Switches, Switches, SWITCH TACTILE SPST-NO 0.05A 12V	Original	PDF
TL1250F280GRRCLR	E-SWITCH	Tactile Switches, Switches, SWITCH TACTILE SPST-NO 0.05A 12V	Original	PDF
TL1250F280RQRCLR	E-SWITCH	Tactile Switches, Switches, SWITCH TACTILE SPST-NO 0.05A 12V	Original	PDF

TL1250F280RRRCLR	E-SWITCH	Tactile Switches, Switches, SWITCH TACTILE SPST-NO 0.05A 12V	Original	PDF
TL-1250NE	Terasaki Electric	Circuit Breaker, 3 Poles \| 4 Poles, 690VAC, 1250A	Original	PDF

TL125 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TL205 Abstract: TL2322 RO4350 tl233 tl241 587-1818-2-ND PTFC260202FC c201 017 C202 tl147 Text: PTFC260202FC Thermally-Enhanced High Power RF LDMOS FET 25 W, 28 V, 2495 – 2690 MHz Description The PTFC260202FC integrates two independent 10-watt LDMOS FETs and is designed for use in cellular amplifier applications in the 2300 to 2700 MHz frequency band. Manufactured with Infineon's	Original	PTFC260202FC PTFC260202FC 10-watt H-37248-4 TL205 TL2322 RO4350 tl233 tl241 587-1818-2-ND c201 017 C202 tl147	PDF
transistor TL131 Abstract: TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 PTFB212507SH LM78L05ACMND Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	PTFB212507SH PTFB212507SH 200-watt H-34288G-4/2 transistor TL131 TL231 tl127 TL130 tl131 transistor tl120 8C802 tl-130 LM78L05ACMND	PDF
tl249 Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242 Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6, H-34288-6, tl249 tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 tl250 TL242	PDF
XS250NJ Abstract: tembreak xs250nj terasaki circuit breaker XH125NJ XS800SE XS125NJ XS1250SE XS1600SE AT 25 terasaki XS630NJ XS630CJ Text: Innovators in Protection Technology Manual transfer switches 3 and 4 pole 9 MCCBs used Ampere Range XS125CJ XS125CJ XS125CJ XS125NJ XS125NJ XS125NJ XH125NJ XH125NJ XH125NJ XH125PJ XH125PJ XH125PJ XH160PJ XS250NJ XS250NJ XH250NJ XH250NJ XS400CJ XS400CJ XS400NJ	Original	XS125CJ XS125NJ XH125NJ XH125PJ XS250NJ tembreak xs250nj terasaki circuit breaker XH125NJ XS800SE XS125NJ XS1250SE XS1600SE AT 25 terasaki XS630NJ XS630CJ	PDF
Untitled Abstract: No abstract text available Text: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.	Original	PTFA091503EL PTFA091503EL 150-watt, H-33288-6	PDF
LM7805ACH-ND Abstract: TL174 tl173 PTVA035002EV V1 Text: PTVA035002EV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 500 W, 50 V, 390 – 450 MHz Description The PTVA035002EV LDMOS FET is designed for use in power amplifier applications in the 390 MHz to 450 MHz frequency band. Features	Original	PTVA035002EV PTVA035002EV H-36275-4 a035002 50stances. LM7805ACH-ND TL174 tl173 PTVA035002EV V1	PDF
C109 ceramic capacitor Abstract: TL235 Text: PTFB213208FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 – 2170 MHz Description The PTFB213208SV is a 320-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	PTFB213208FV PTFB213208SV 320-watt H-34275G-6/2 C109 ceramic capacitor TL235	PDF
PTFB212507SH Abstract: No abstract text available Text: PTFB212507SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 28 V, 2110 – 2170 MHz Description The PTFB212507SH is a 200-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 2110	Original	PTFB212507SH PTFB212507SH 200-watt	PDF
TRANSISTOR tl131 Abstract: tl239 Text: PTFB082817FH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 280 W, 30 V, 791 – 821 MHz Description The PTFB082817FH is a LDMOS FET intended for use in multistandard cellular power ampliier applications. Features include	Original	PTFB082817FH PTFB082817FH H-34288-4/2 TRANSISTOR tl131 tl239	PDF
C205 Abstract: No abstract text available Text: PTFB191501E PTFB191501F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 150 W, 1930 – 1990 MHz Description The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs designed for single- and two-carrier WCDMA and CDMA applications	Original	PTFB191501E PTFB191501F PTFB191501E PTFB191501F 150-watt H-36248-2 H-37248-2 C205	PDF
PTFB090901EA Abstract: No abstract text available Text: PTFB090901EA PTFB090901FA Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 920 to 960 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced	Original	PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2	PDF
TL272 Abstract: TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148 Text: PTMA080304M Confidential, Limited Internal Distribution Dual Wideband RF LDMOS Power Amplifier 30 W 2 x 15 W , 28 V, 700 – 1000 MHz Description The PTMA080304M integrates two wideband 2-stage LDMOS integrated amplifier in a 20-lead plastic package. It is designed for use	Original	PTMA080304M PTMA080304M 20-lead PG-DSO-20-63 TL272 TL184 TL181 tl271 TL308 Tl187 transistor tl274 TL293 TL193 TL148	PDF
PTFB090901 Abstract: TL127 PTFB090901EA 569w PTFB090901FA 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801 Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	PTFB090901EA PTFB090901FA PTFB090901FA 90-watt H-36265-2 H-37265-2 PTFB090901 TL127 569w 100B4R7BW500X PCC104BCTND PCC104bct-nd TRANSISTOR c104 TRANSISTOR c801	PDF
TL145 Abstract: TL245 transistor c111 C216 TL152 Text: PTFB093608FV Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 360 W, 28 V, 920 – 960 MHz Description The PTFB093608FV is a 360 W LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 920 to 960	Original	PTFB093608FV PTFB093608FV H-37275-6/2 TL145 TL245 transistor c111 C216 TL152	PDF

TRANSISTOR tl131 Abstract: tl134 PTFB212503FL tl127 TL234 TL107 tl117 atc100b6r2 tl227 c103 TRANSISTOR DATA Text: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power	Original	PTFB212503EL PTFB212503FL PTFB212503EL PTFB212503FL 240-watt TRANSISTOR tl131 tl134 tl127 TL234 TL107 tl117 atc100b6r2 tl227 c103 TRANSISTOR DATA	PDF
PTFB090901EA Abstract: No abstract text available Text: PTFB090901EA PTFB090901FA Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 90 W, 28 V, 920 – 960 MHz Description The PTFB090901EA and PTFB090901FA are 90-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	PTFB090901EA PTFB090901FA PTFB090901EA PTFB090901FA 90-watt H-37265-2	PDF
TL139 Abstract: PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145 Text: PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to	Original	PTFB183404F PTFB183404F 340-watt H-37275-6/2 TL139 PTFB183404 PTFB183404EF TL148 TRANSISTOR tl131 TL162 TL170 tl172 c105 TRANSISTOR TL145	PDF
PTFB192503EL Abstract: ATC100A8R2BW150XB c103 TRANSISTOR tl131 TRANSISTOR c104 C802 C803 R250 587-1818-2-ND TL231 Text: PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier	Original	PTFB192503EL PTFB192503FL PTFB192503EL PTFB192503FL 240-watt H-33288-6 H-34288-4/2 ATC100A8R2BW150XB c103 TRANSISTOR tl131 TRANSISTOR c104 C802 C803 R250 587-1818-2-ND TL231	PDF
PTFB192503EL V1 Abstract: No abstract text available Text: PTFB192503EL PTFB192503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1930 – 1990 MHz Description The PTFB192503EL and PTFB192503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power ampliier	Original	PTFB192503EL PTFB192503FL PTFB192503EL PTFB192503FL 240-watt H-33288-6 H-34288-4/2 PTFB192503EL V1	PDF
TL107 linear Abstract: TRANSISTOR tl131 Text: PTFB182557SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 250 W, 28 V, 1805 – 1880 MHz Description The PTFB182557SH is a 250-watt LDMOS FET speciically designed for use in Doherty cellular power ampliier applications in the 1805	Original	PTFB182557SH PTFB182557SH 250-watt H-34288G-4/2 TL107 linear TRANSISTOR tl131	PDF
PTFB212503FL Abstract: No abstract text available Text: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power	Original	PTFB212503EL PTFB212503FL PTFB212503EL PTFB212503FL 240-watt H-33288-6 H-34288-4/2	PDF
TRANSISTOR tl131 Abstract: No abstract text available Text: PTFB211501E PTFB211501F Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz Description The PTFB211501E and PTFB211501F are thermally-enhanced, 150-watt, LDMOS FETs designed for cellular power amplifier applications in the 2110 – 2170 frequency band. Features include	Original	PTFB211501E PTFB211501F PTFB211501E PTFB211501F 150-watt, H-36248-2 H-37248-2 TRANSISTOR tl131	PDF
TF800BB14-061 Abstract: P1999 8051 microwave oven ec 9410 cf K 2676 9343-11R1 TF800BA14-061 2320-1SL 9816SL 9410-3SL-1 Text: < ] ^ _dZkijho$@e^Wdied^Wibed]X[[dh[Ye]d_p[ZWiW $ J^[jhWZ_j_edYedj_dk[i°	Original	JK-943L 9343-11R1 9343-12R1 9343-13R1 9343-14R1 9343-16R1 9343-18R1 JK-943H TF800BB14-061 P1999 8051 microwave oven ec 9410 cf K 2676 9343-11R1 TF800BA14-061 2320-1SL 9816SL 9410-3SL-1	PDF
TL300 Abstract: TL65 Text: tozu -profile t 2l C O M P A T IB L E Mini Dl LO G IC DELAY DULE _ f # T2L Input and outputs all m odules is 4ns m axim um w hen m easured from 0.8V to # Delays stable and precise 2.0V . T e m p e ra tu re co e fficie n t o f delay is approxim ately +500	OCR Scan	500ns 1001YP. 100TYP C/103092 TL300 TL65	PDF

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TL125 Search Results

TL125 Price and Stock

NXP Semiconductors NT2H0301F0DTL,125

E-Switch Inc TL1250F280ARN

Essentra Components STL-1-250-3-01

E-Switch Inc TL1250F180BQRCLR

E-Switch Inc TL1250F180GRRCLR

TL125 Datasheets (16)

TL125 Datasheets Context Search

TL205

transistor TL131

tl249

XS250NJ

Untitled

LM7805ACH-ND

C109 ceramic capacitor

PTFB212507SH

TRANSISTOR tl131

C205

PTFB090901EA

TL272

PTFB090901

TL145

TRANSISTOR tl131

PTFB090901EA

TL139

PTFB192503EL

PTFB192503EL V1

TL107 linear

PTFB212503FL

TRANSISTOR tl131

TF800BB14-061

TL300