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    TL 424 TRANSISTOR Search Results

    TL 424 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TL 424 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    TL 424 TRANSISTOR

    Abstract: A1049 C1996 LM60 LM60B LM60BIM3 LM60BIM3X LM60C LM60CIM3 LM60CIM3X
    Text: LM60B LM60C 2 7V SOT-23 Temperature Sensor Y General Description Y The LM60 is a precision integrated-circuit temperature sensor that can sense a b40 C to a 125 C temperature range while operating from a single a 2 7V supply The LM60’s output voltage is linearly proportional to Celsius Centigrade temperature ( a 6 25 mV C) and has a DC offset of


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    LM60B LM60C OT-23 TL 424 TRANSISTOR A1049 C1996 LM60 LM60BIM3 LM60BIM3X LM60C LM60CIM3 LM60CIM3X PDF

    H11AV2

    Abstract: H11AV1A H11AV1M
    Text: H11AV1,A H11AV2,A GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V BR CEO Minimum


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    H11AV1 H11AV2 P01101866 CR/0117 E90700, H11AV1A H11AV1M PDF

    H11AV1

    Abstract: H11AV2 H11AV1A H11AV2A H11AV1M
    Text: H11AV1,A H11AV2,A GlobalOptoisolator 6-Pin DIP Optoisolators Transistor Output The H11AV1,A and H11AV2,A devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector. • Guaranteed 70 Volt V BR CEO Minimum


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    H11AV1 H11AV2 H11AV2SR2V-M H11AV2SV-M P01101866 CR/0117 E90700, H11AV1A H11AV2A H11AV1M PDF

    arco mica trimmer

    Abstract: ARF464A ARF464B VK200-4B
    Text: ARF464A ARF464B D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 65V 100W 100MHz The ARF464A and ARF464B comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been


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    ARF464A ARF464B O-247 100MHz ARF464A ARF464B arco mica trimmer VK200-4B PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Product Description Sirenza Microdevices’ SZP-3026Z is a high linearity single stage class AB Heterojunction Bipolar Transistor HBT amplifier housed in a proprietary surface-mountable plastic encapsulated package. This HBT amplifier is made with


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    SZP-3026Z EDS-104666 SZP-3026Zâ SZP-3026Z* PDF

    BUZ72A

    Abstract: TA17401 TB334
    Text: BUZ72A Data Sheet June 1999 9A, 100V, 0.250 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching


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    BUZ72A TA17401. BUZ72A TA17401 TB334 PDF

    TL 417

    Abstract: TlP30C P30C
    Text: 3 8 7 5 0 8 1 _ G ~ ’E S O L ID S TA TE 3 3 7 5 0 6 1 D O 3 l ^ a 3? ^ f f > TIP 30 Series PNP POWER TRANSISTORS -40 — 100 VOLTS -1 AMP, 30 WATTS COMPLEMENTARY TO THE TIP29 SERIES t h e TIP 30 Series power transistors are designed for use in general purpose amplifier and switching applications.


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    TIP29 TL 417 TlP30C P30C PDF

    transistor c 6073

    Abstract: TRANSISTOR 431p transistor c 6073 circuit diagram ptc 820 TF PTC PTC886 6063 T0 ptc 205 ptc 500 ptc b
    Text: MICROSEMI CORP/POWER ÖSD D • bllSTSG 00003b2 2 NPN Darlington Transistors TO-2Q4MA TO ' 3 Part Number Ic Amps PTC 10002 PTC 10003 PTC 10006 PTC 10007 PTC 6251 PTC 6252 PTC 6253 PTC 6000 PTC 6001 PTC 6002 PTC 6003 PTC 10000 PTC 10001 PTC 10004 PTC 10005


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    00003b2 TQ-204MA PTC102 transistor c 6073 TRANSISTOR 431p transistor c 6073 circuit diagram ptc 820 TF PTC PTC886 6063 T0 ptc 205 ptc 500 ptc b PDF

    lm7211

    Abstract: TL 424 TRANSISTOR 100-C LM60 LM60BIM3 LM60BIM3X LM60CIM3 LM60CIM3X MA03B t6c marking sot23
    Text: b 5011B 4 0 1 0 1 5 0 0 7 T & " _ Semiconductor LM60B/LM60C 2.7V, SOT-23 Temperature Sensor General Description The LM60 is a precision integrated-circuit temperature sen­ sor that can sense a -4 0 ° C to + 125“C temperature range while operating from a single + 2.7V supply. The LM60's


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    bS011E4 LM60B/LM60C OT-23 lm7211 TL 424 TRANSISTOR 100-C LM60 LM60BIM3 LM60BIM3X LM60CIM3 LM60CIM3X MA03B t6c marking sot23 PDF

    CD860

    Abstract: No abstract text available
    Text: TELEDYNE SûE COMPONENTS H D • êW bÜ S GOQbSSB Q ■ T -¿ 7 fiesSOi ULTRA LOW NOISE CD860 DUAL MATCHED N-CHANNEL FIELD EFFECT TRANSISTOR GEOMETRY 424 IU > M HIGH PERFORMANCE DIFFERENTIAL AMPLIFIERS T -JtOMAX. • 1.4 nv /Hz1/2 en @ 1 kHz • Min. Operating Gm 25,000 /imho


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    CD860 CD860 140kHz 20kHz 100KQ E--06 PDF

    D44E1

    Abstract: D44E3 D44E2 d44e3 to-220 TL 272 D44E D45E 130133
    Text: VERY HIGH GAIN D44E Series NPN POWER DARLINGTON TRANSISTORS 40-80 VOLTS 10 AMP, 50 WATTS COMPLEMENTARY TO THE D45E SERIES Applications: NPN COLLECTOR • Solenoid Driver • Lamp Driver • Relay Substitute • Switching Regulator CASE STYLE TO -220A B DIMENSIONS ARE IN INCHES AND M ILLIM ETERS


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    04Sai4| D44E1 D44E3 D44E2 d44e3 to-220 TL 272 D44E D45E 130133 PDF

    2N6550

    Abstract: CD860 teledyne transistor teledyne crystalonics
    Text: TELEDY NE COMPONENTS SÔE D • ôTlTbûa GQQbSS4 2 ■ 7 < Il - * 5 ULTRA LOW NOISE 2N6550 CM860 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR G E O M E T R Y 424 .230 MAX. 195t.005- Lo The 2 N 6 5 5 0 / C M 8 6 0 is a high, gm />D low noise Junction F.E.T. for low level


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    2N6550 CM860 E--07 2N6550/CM860/CD860 2N6550/CM860/CD860 CD860 teledyne transistor teledyne crystalonics PDF

    2N6550

    Abstract: ultra low igss pA AAHB low igss 2N6550/CM860
    Text: ULTRA LOW NOISE h â 2N6550 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR r • GEOMETRY 424, PG. 58 ¿ 3 0 MAX The 2N 6550 is a high, Jn/lD lo w noise ju n c tio n F.E.T. fo r lo w level a m p lifie r use. The min. gm o f 25,000 ^imho assures a voltage gain o f 25 m in. w ith a 1K


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    2N6550 2N6550 000/j/ ultra low igss pA AAHB low igss 2N6550/CM860 PDF

    buz31

    Abstract: 06G3 BUZ31 H
    Text: S XLXCONIX INC lflE D • 62547 35 0 0 14b 01 3 ■' BUZ31 N-Channel Enhancement Mode Transistor T - 3 TO-22QAB ct - U TOP VIEW PRODUCT SUMMARY V BR|DSS ,D§ r 200 0.20 ■d (A 12.5 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS


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    BUZ31 O-22QAB QQ14b buz31 06G3 BUZ31 H PDF

    2SD1952

    Abstract: No abstract text available
    Text: SILICON TRANSISTOR 2SD1952 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLO DESCRIPTION The 2SD1952 is designed fo r audio frequency power amplifier and switching application, especially in Hybrid integrated Circuits. FEATURES PACKAGE DIMENSIONS • World Standard Miniature Package


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    2SD1952 2SD1952 2SB1301 PDF

    424 motorola

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA G I N E R E E MGSF1N02LT1 Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors N -C H AN N EL EN H AN CEM EN T-M O D E TM OS M O SFET Part of the GreenLine Portfolio of devices with energyconserving traits.


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    MGSF1N02LT1 424 motorola PDF

    P4N60

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M G P4N60ED Insulated Gate Bipolar Transistor w ith Anti-Parallel Diode N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN T0-220 4.0 A @ 90“C 6.0 A @ 25°C 600 VOLTS SHORT CIRCUIT RATED LOW ON-VOLTAGE


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    MGP4N60ED P4N60 PDF

    Untitled

    Abstract: No abstract text available
    Text: EXAR 3422618 CORP EXAR CORP D e | 342Eblfi " 91D XR-H100 Master-Chip Chip Size: 95 x 80 mils NPN Transistors Total Components: 424 Small Signal: 73 Bonding Pads: 18 Medium: 2 Max. Operating Voltage: 20V PNP Transistors Lateral: 22 Pinch Resistors 60kfi: 8


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    342Eblfi XR-H100 60kfi: 356kil XR-H100 XR-1488/1489A XR-1488 XR-1568/XR-1468C XR-1468/1568 XR-1468/1568 PDF

    XR-H100

    Abstract: XR-1488 XR-1488N XR-1488P XR-1489A XR-1489AN XR-1489AP EXAR XR
    Text: EXAR & CORP D e | 342Eblfi □004?b3 i I 3 4 2 2 6 18 EXAR 91D CORP XR-H100 Master-Chip Chip Size: 95 x 80 mils Total Components: 424 Bonding Pads: 18 Max. Operating Voltage: 20V NPN Transistors Small Signal: 73 Medium: 2 PNP Transistors Lateral: 22 T Pinch Resistors


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    342Eblà XR-H100 60kfi: 450ft: 356kii XR-H100 XR-1488/1489A XR-1488 with568M XR-1568/XR-1468C XR-1488N XR-1488P XR-1489A XR-1489AN XR-1489AP EXAR XR PDF

    TL 424 TRANSISTOR

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TO c a VOE UL CSA SETI BS ® SEMKO OEMKO BAST NEMKO 6-Pin DIP Optoisolators Transistor Output H11A1 thru H11A5 STYLE 1 PLASTIC The H11A1 thru H11A5 devices consist of a gallium arsenide infrared em itting diode optically coupled to a m onolithic silicon phototransistor detector.


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    H11A1 H11A5 H11A5 TL 424 TRANSISTOR PDF

    0903010

    Abstract: 2SC3816 E090101 NE0900-07
    Text: CLASS C, 940 MHz, 7 VOLT POWER TRANSISTOR *£*¡2 , NEM090701-07 FEATURES DESCRIPTION • HIGH PO W ER AN D GAIN The NE0900-07 and N E M 0900-07 series of NPN silicon epitaxial UH F power transistors are designed specifically for hand-held radio applications with a supply voltage of 7.2 V.


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    NEM090701-07 NE0900-07 NEM0900-07 0903010 2SC3816 E090101 PDF

    14n50

    Abstract: TL 424 TRANSISTOR sth14n50
    Text: SGS-THOMSON «^ miOTrifMOOi STH14N50 STH14N50FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH14N50 STH14N50FI . . . . . V dss RDS(on Id 500 V 500 V 0.45 Q 0.45 £2 14.1 A 8 .8 A AVALAN C H E RUG G EDN ESS TECHNO LO G Y 100% AVALANC HE TESTED


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    STH14N50 STH14N50FI 14N50 STH14N50FI STH14N50/FI TL 424 TRANSISTOR PDF

    2N73A

    Abstract: 2N696 2n697 2N718 ml907 TW58 2W17
    Text: TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 7MI31. ?tW58. 2N1420. 2N1507, 2W1613, 2NI71I N-P-N SILICON TRANSISTORS B U L L E T I N N O. D L - S 6 9 3 4 7 1 , M A Y 1 9 6 3 - B E V I S 6 D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for


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    2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N1420. 2N1507, 2W1613, 2NI71I 2N73A 2N696 2n697 2N718 ml907 TW58 2W17 PDF

    transistor k 4110

    Abstract: K 4014 transistor vqe 14e TLO51 wf vqe 24 d DIODE 4014 IC 4022 MOC70 S 417T WF VQE 13
    Text: MOTOROLA SC D IO D ES/O PTO IM E 0 I MOTOROLA b3b?2SS 0000404 - R 4 \ - ~ 5 | 7 3 > SEMICONDUCTOR TECHNICAL DATA MOC70 Series Slotted Optical Sw itch es Transistor Output These devices each consist of a gallium arsenide infrared emitting diode facing a sili­


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    i-noa36Â osit34Â 354G-01 transistor k 4110 K 4014 transistor vqe 14e TLO51 wf vqe 24 d DIODE 4014 IC 4022 MOC70 S 417T WF VQE 13 PDF