Untitled
Abstract: No abstract text available
Text: Topstek Current Transducer TKP3A . TKP30A TKP 3A~30A Applications Features iHighly reliable Hall Effect device iCompact and light weight iFast response time iExcellent linearity of the output voltage over a wide input range iExcellent frequency response > 50 kHz
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TKP30A
V080201
6-40A
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P8800I
Abstract: H8800 auto ac line P-8800I SP9926 90-264V P8800
Text: SP9926 8.6 Watts Series Switching Power Supply FEATURES ●Low Cost ●90-264Vac Universal Input ●CISPR’B’& CNS‘B’Compliance ●100% Burn-In Test ●Over Voltage Protection Installation ●Short-Circuit Protection Installation ●Protection Type: Auto-Recovery
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SP9926
90-264Vac
120mV
P-8800I
H8800
P8800I
auto ac line
SP9926
90-264V
P8800
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P8800I
Abstract: 12VMIN
Text: ＜ SP9926 8.6 Watts Series Switching Power Supply FEATURES ●Low Cost ●90-264Vac Universal Input ●CISPR’B’ & CNS‘B’ Compliance ●100% Burn-In Test ●Over Voltage Protection Installation ●Short-Circuit Protection Installation ●Protection Type: Auto-Recovery
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SP9926
90-264Vac
120mV
P-8800I
H8800
P8800I
12VMIN
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sp9908
Abstract: bothhand sp9908 90-264VAC P8800I
Text: ＜ SP9908 Series 39 Watts Switching Power Supply FEATURES ●Hub Standard 3”x6” Size. ●90-264Vac Universal Input ●CISPR’B’ Compliance ●100% Burn-In Test ●Over Voltage Protection Installation ●Short-Circuit Protection Installation ●Protection Type: Auto-Recovery
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SP9908
90-264Vac
230g/8
180mV
IEC-320
P-8800I
sp9908
bothhand sp9908
P8800I
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0714
Abstract: P8800 P8800I
Text: ＜ SP9801 15 Watts Series Switching Power Supply FEATURES ●Low Cost ●90-264Vac Universal Input ●CISPR’B’ & CNS‘B’ Compliance ●100% Burn-In Test ●Over Voltage Protection Installation ●Short-Circuit Protection Installation ●Protection Type: Auto-Recovery
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SP9801
90-264Vac
IEC-320
P-8800I
H8800
120mV
0714
P8800
P8800I
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mps2002
Abstract: SVH-21TP EN60601-1 IEC60601-1 5566-2 EN5501 DHT 11 tkp DHT
Text: 1~4 Output Medical Type 200W Medical series Features Universal AC input / Full range Low leakage current <180 A Protections: Short circuit / Overload / Over voltage / Over temperature Free air convection for 140W and forced air convection for 200W UL60601-1 medical safety approved
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UL60601-1
100KHz
EN60601-1
IEC60601-1
440Hz
370VDC.
95/230VAC
98/115VAC
115VAC,
230VAC,
mps2002
SVH-21TP
EN60601-1
IEC60601-1
5566-2
EN5501
DHT 11
tkp DHT
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EN60601-1
Abstract: IEC60601-1 dht 22
Text: RSG RSG Electronic Components GmbH Sprendlinger Landstr. 115 D-63069 Offenbach/Germany Tel. +49 69 984047-0 Fax +49 69 984047-77 info@rsg-electronic.de www.rsg-electronic.de • ■ ELECTRONIC COMPONENTS ■ Änderungen vorbehalten / subject to change without notice
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D-63069
UL60601-1
100KHz
EN606ignment
SVH-21T-P1
MPD/T/Q-200)
Q-200)
25CFM
MPD-200
MPT/Q-200
EN60601-1
IEC60601-1
dht 22
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CXK77B3610GB
Abstract: CXK77B3610GB-6 CXK77B3610GB-7
Text: CXK77B3610GB -6/7 High Speed Bi-CMOS Synchronous Static RAM Preliminary For the availability of this product, please contact the sales office. Description The CXK77B3610GB-6/7 is a high speed 1M bit Bi-CMOS synchronous statis RAM organized as 32768 words by 36 bits. This SRAM integrates input
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CXK77B3610GB
CXK77B3610GB-6/7
CXK77B3610GB-6
166MHz
CXK77B3610GB-7
142MHz
Package30
CXK77B3610GB
BGA-119P-01
CXK77B3610GB-6
CXK77B3610GB-7
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tkp dh2
Abstract: EN60601-1 IEC60601-1 rf transistor mps
Text: 1~4 Output Medical Type 200W Medical series Features Universal AC input / Full range Low leakage current <180 A Protections: Short circuit / Overload / Over voltage / Over temperature Free air convection for 140W and forced air convection for 200W UL60601-1 medical safety approved
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UL60601-1
100KHz
EN60601-1
IEC60601-1
440Hz
370VDC.
95/230VAC
98/115VAC
115VAC,
230VAC,
tkp dh2
EN60601-1
IEC60601-1
rf transistor mps
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capacitors TKP
Abstract: 200w Transistor h jst 10 connector tkp 24 EN60601-1 IEC60601-1
Text: 1~4 Output Medical Type 200W Medical series Features Universal AC input / Full range Low leakage current <180 A Protections: Short circuit / Overload / Over voltage / Over temperature Free air convection for 140W and forced air convection for 200W UL60601-1 medical safety approved
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UL60601-1
100KHz
EN60601-1
IEC60601-1
440Hz
370VDC.
95/230VAC
98/115VAC
115VAC,
230VAC,
capacitors TKP
200w Transistor
h jst 10 connector
tkp 24
EN60601-1
IEC60601-1
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Burst CellularRAM Memory
Abstract: No abstract text available
Text: TN-45-04: Multiplexed Async/Burst CellularRAM Technical Note CellularRAM Multiplexed Async/Burst Operation Introduction Micron CellularRAM™ products are high-speed CMOS PSRAM devices developed for low-power, portable applications. The popularity of the CellularRAM interface and a
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TN-45-04:
09005aef81912254/Source:
09005aef8191222a
tn4504
Burst CellularRAM Memory
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UL1007
Abstract: AWG18 AWG20 AWG 24 UL1007 H6657P UL1007 20 awg UL-1007 UL1007 AWG18 tkp 24
Text: SWITCHING POWER SUPPLY D AWG AWG D #16 <1.8 #18 <1.8 #20 <1.5 #22 <1.2 DOC No Date 線 材 規 格 圖 WIRING HARNESS #24 <1.0 #26 <1.0 TWISTED TWISTED & HALF TIN DIPPED TWISTED & FULL TIN DIPPED FB-OT-S54 2002.12.26 REV A1 UNIT mm 料號 Tolerance MODEL CUSTOMER
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FB-OT-S54
H6657P24
WP43--5P1A
UL1007
UL1007
AWG18
AWG20
AWG 24 UL1007
H6657P
UL1007 20 awg
UL-1007
UL1007 AWG18
tkp 24
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DQ100
Abstract: transistor d514
Text: Rev. 1.0, Apr. 2010 K1C5616BKB 256Mb B-die UtRAM2 Multiplexed Synchronous Burst Uni-Transistor Random Access Memory. 16M x16bit datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K1C5616BKB
256Mb
x16bit)
DQ100
transistor d514
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Untitled
Abstract: No abstract text available
Text: 1 2 3 4 PIN No NAME DESCRIPTION 1 2 CD/DAT3 CMD CARD DETECTION COMMAND/ANSWER 3 4 Vss1 Vdd GND POWER SUPPLY 5 6 7 CLK Vss2 CLOCK GND Connector data line 0 DAT0 DAT1 DAT2 8 9 Connector data line 1 Connector data line 2 5 TECHNICAL CHARACTERISTICS A MATERIAL
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UL94-V0
100VAC
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Untitled
Abstract: No abstract text available
Text: K1C3216B8E UtRAM2 32Mb 2M x 16 bit Multiplexed UtRAM2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
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K1C3216B8E
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UtRAM Density
Abstract: D513
Text: Preliminary UtRAM2 K1C6416B8E 64Mb 4M x 16 bit Multiplexed UtRAM2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K1C6416B8E
UtRAM Density
D513
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EMC326SP16AK
Abstract: No abstract text available
Text: Preliminary EMC326SP16AK 2Mx16 CellularRAM AD-MUX Document Title 2Mx16 bit CellularRAM AD-MUX Revision History Revision No. 0.0 History Initial Draft Draft Date Remark July 18,2007 Preliminary Emerging Memory & Logic Solutions Inc. 4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Zip Code : 690-717
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EMC326SP16AK
2Mx16
100ns
120ns
EMC326SP16AK
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EMC646SP16K
Abstract: Burst CellularRAM Memory
Text: Preliminary EMC646SP16K 4Mx16 CellularRAM AD-MUX Document Title 4Mx16 bit CellularRAM AD-MUX Revision History Revision No. 0.0 History Initial Draft Draft Date Remark July 13,2007 Preliminary Emerging Memory & Logic Solutions Inc. 4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea
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EMC646SP16K
4Mx16
100ns
120ns
EMC646SP16K
Burst CellularRAM Memory
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K1C1616B8B
Abstract: No abstract text available
Text: K1C1616B8B UtRAM2 16Mb 1M x 16 bit Multiplexed UtRAM2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN
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K1C1616B8B
K1C1616B8B
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Untitled
Abstract: No abstract text available
Text: MPO-200S Series Single Output, 200W Miniature, Open Frame AC/DC Power Supplies Electrical Specifications Key Features: • 200W Output Power • PFC to EN 61000-3-2,3 “D” • Universal 90-264 AC Input • EN 60950 Approved UL • Miniature 3 x 5 In Package
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MPO-200S
12VDC
P205DG-02
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104M
Abstract: N64T1618CBA
Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N64T1618CBA Advance Information 64Mb Ultra-Low Power Async, Page and Burst CMOS PSRAM Overview Features The N64T1618CBA is an integrated memory
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N64T1618CBA
N64T1618CBA
23250-C
104M
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EMC326SP16AJ
Abstract: No abstract text available
Text: Preliminary EMC326SP16AJ 2Mx16 CellularRAM Document Title 2Mx16 bit CellularRAM Revision History Revision No. 0.0 History Initial Draft Draft Date Remark July 05,2007 Preliminary Emerging Memory & Logic Solutions Inc. 4F Korea Construction Financial Cooperative B/D, 301-1 Yeon-Dong, Jeju-Si, Jeju-Do, Rep.of Korea Zip Code : 690-717
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EMC326SP16AJ
2Mx16
100ns
120ns
EMC326SP16AJ
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BCR150
Abstract: 104M N32T1618CBB
Text: NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com N32T1618CBB Advance Information 32Mb Ultra-Low Power Async, Page and Burst CMOS PSRAM Overview Features The N32T1618CBB is an integrated memory
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N32T1618CBB
N32T1618CBB
23251-C
BCR150
104M
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transistor d514
Abstract: No abstract text available
Text: Preliminary UtRAM2 K1C6416B2E 64Mb 4M x 16 bit UtRAM2 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K1C6416B2E
transistor d514
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