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    TK5A Price and Stock

    Toshiba America Electronic Components TK5A53D(STA4,Q,M)

    MOSFET N-CH 525V 5A TO220SIS
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    DigiKey TK5A53D(STA4,Q,M) Tube 50 1
    • 1 $1.86
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    • 100 $1.86
    • 1000 $0.57937
    • 10000 $0.495
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    Mouser Electronics TK5A53D(STA4,Q,M)
    • 1 $1.75
    • 10 $1.69
    • 100 $0.748
    • 1000 $0.524
    • 10000 $0.495
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    Toshiba America Electronic Components TK5A50D(STA4,Q,M)

    MOSFET N-CH 500V 5A TO220SIS
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    DigiKey TK5A50D(STA4,Q,M) Tube 50 1
    • 1 $1.74
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    • 1000 $0.53627
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    Mouser Electronics TK5A50D(STA4,Q,M) 378
    • 1 $1.71
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    • 100 $0.757
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    Toshiba America Electronic Components TK5A80E,S4X

    PB-F POWER MOSFET TRANSISTOR TO-
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    DigiKey TK5A80E,S4X Tube 45 1
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    Mouser Electronics TK5A80E,S4X 284
    • 1 $1.44
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    TTI TK5A80E,S4X Tube 220,950 50
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    • 1000 $0.518
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    Toshiba America Electronic Components TK5A60D(STA4,Q,M)

    MOSFET N-CH 600V 5A TO220SIS
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    DigiKey TK5A60D(STA4,Q,M) Tube 35 1
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    Mouser Electronics TK5A60D(STA4,Q,M) 7
    • 1 $1.93
    • 10 $1.87
    • 100 $0.877
    • 1000 $0.596
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    Toshiba America Electronic Components TK5A65D(STA4,Q,M)

    MOSFET N-CH 650V 5A TO220SIS
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    DigiKey TK5A65D(STA4,Q,M) Tube 28 1
    • 1 $2.27
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    Mouser Electronics TK5A65D(STA4,Q,M) 232
    • 1 $2.13
    • 10 $2.01
    • 100 $1.03
    • 1000 $0.674
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    Verical TK5A65D(STA4,Q,M) 50 14
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    Chip One Stop TK5A65D(STA4,Q,M) Tube 50
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    TK5A Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TK5A Topstek Topstek Current Transducer Original PDF
    TK5A45DA(STA4,Q,M) Toshiba TK5A45DA - Trans MOSFET N-CH 450V 4.5A 3-Pin(3+Tab) TO-220SIS Original PDF
    TK5A50D Toshiba Japanese - Transistors - Mosfets Original PDF
    TK5A50D Toshiba Transistors - Mosfets Original PDF
    TK5A50D(Q) Toshiba TK5A50D - Trans MOSFET N-CH 500V 5A 3-Pin(3+Tab) TO-220SIS Original PDF
    TK5A50D(Q,M) Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 5A TO220SIS Original PDF
    TK5A50D(STA4,Q,M) Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 5A TO220SIS Original PDF
    TK5A53D(STA4,Q,M) Toshiba TK5A53D - Trans MOSFET N-CH 525V 5A 3-Pin(3+Tab) TO-220SIS Original PDF
    TK5A55D(STA4,Q,M) Toshiba TK5A55D - Trans MOSFET N-CH 550V 5A 3-Pin(3+Tab) TO-220SIS Original PDF
    TK5A60D Toshiba Japanese - Transistors - Mosfets Original PDF
    TK5A60D Toshiba Transistors - Mosfets Original PDF
    TK5A60D(STA4,Q,M) Toshiba TK5A60D - Trans MOSFET N-CH 600V 5A 3-Pin(3+Tab) TO-220NIS Original PDF
    TK5A60W Toshiba Japanese - Transistors - Mosfets Original PDF
    TK5A60W Toshiba Transistors - Mosfets Original PDF
    TK5A60W Toshiba TK5A60W - Nch 500V Original PDF
    TK5A60W,S4VX Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N CH 600V 5.4A TO-220SIS Original PDF
    TK5A65D Toshiba Japanese - Transistors - Mosfets Original PDF
    TK5A65D Toshiba Transistors - Mosfets Original PDF
    TK5A65DA(STA4,Q,M) Toshiba TK5A65DA - Trans MOSFET N-CH 650V 4.5A 3-Pin(3+Tab) TO-220SIS Original PDF
    TK5A65D(STA4,Q,M) Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 650V 5A TO-220SIS Original PDF

    TK5A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    5A 700V MOSFET

    Abstract: 700v 5A mosfet
    Text: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: TK5A65D * Category: Transistors /Power MOSFET/Nch 500V<VDSS 700V


    Original
    TK5A65D O-220SIS TK5A65D+ 16-Apr-09 5A 700V MOSFET 700v 5A mosfet PDF

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    Abstract: No abstract text available
    Text: TK5A45DA MOSFETs Silicon N-Channel MOS π-MOS TK5A45DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.52 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 1.5 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 450 V)


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    TK5A45DA O-220SIS PDF

    Untitled

    Abstract: No abstract text available
    Text: TK5A55D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ TK5A55D スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.4 Ω (標準) : IDSS = 10 A (最大) 漏れ電流が低い。 2.7 ± 0.2 10 ± 0.3 Ф3.2 ± 0.2


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    TK5A55D PDF

    TK5A53D

    Abstract: No abstract text available
    Text: TK5A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK5A53D Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.2 Ω(typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V)


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    TK5A53D TK5A53D PDF

    Untitled

    Abstract: No abstract text available
    Text: TK5A60W MOSFETs Silicon N-Channel MOS DTMOS TK5A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.77 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


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    TK5A60W O-220SIS PDF

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    Abstract: No abstract text available
    Text: TK5A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII TK5A65D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.2 (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.6 S (typ.)


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    TK5A65D PDF

    Untitled

    Abstract: No abstract text available
    Text: TK5A55D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ TK5A55D スイッチングレギュレータ用 単位: mm : IDSS = 10 A (最大) 漏れ電流が低い。 A 3.9 3.0 : |Yfs| = 2.4 S (標準) 順方向伝達アドミタンスが高い。


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    TK5A55D PDF

    Untitled

    Abstract: No abstract text available
    Text: TK5A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK5A53D Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.2 Ω(typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V)


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    TK5A53D PDF

    k5a50d

    Abstract: K5A50 transistor K5A50D tk5a50d K5A50D DATASHEET k5a50d equivalent K*A50D toshiba K5A50D
    Text: TK5A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK5A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.)


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    TK5A50D k5a50d K5A50 transistor K5A50D tk5a50d K5A50D DATASHEET k5a50d equivalent K*A50D toshiba K5A50D PDF

    Untitled

    Abstract: No abstract text available
    Text: TK5A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII TK5A65D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.6 S (typ.)


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    TK5A65D 180mitation, PDF

    K5A60D

    Abstract: TK5A60D k5A60
    Text: TK5A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK5A60D Switching Regulator Applications 2.7 ± 0.2 10 ± 0.3 A 15.0 ± 0.3 Ф3.2 ± 0.2 Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.)


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    TK5A60D K5A60D TK5A60D k5A60 PDF

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    Abstract: No abstract text available
    Text: TK5A60W MOSFET シリコンNチャネルMOS形 DTMOS TK5A60W 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.77 Ω (標準) (2) ゲートスイッチングスピードの最適化。


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    TK5A60W O-220SIS PDF

    k5a50d

    Abstract: TK5A50D K5A50 K5A50D DATASHEET K5A5
    Text: TK5A50D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ TK5A50D ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.3 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 3.0 S (標準)


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    TK5A50D SC-67 2-10U1B 20070701-JA k5a50d TK5A50D K5A50 K5A50D DATASHEET K5A5 PDF

    Untitled

    Abstract: No abstract text available
    Text: TK5A55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK5A55D Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.4Ω(typ.) High forward transfer admittance: |Yfs| = 2.4 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 550 V)


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    TK5A55D PDF

    Untitled

    Abstract: No abstract text available
    Text: TK5A60W MOSFETs Silicon N-Channel MOS DTMOS TK5A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.77 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original
    TK5A60W O-220SIS PDF

    TK5A53D

    Abstract: No abstract text available
    Text: TK5A53D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK5A53D Switching Regulator Applications Unit: mm A 3.9 3.0 Low drain-source ON-resistance: RDS (ON) = 1.2 Ω(typ.) High forward transfer admittance: |Yfs| = 2.8 S (typ.) Low leakage current: IDSS = 10 A (max) (VDS = 525 V)


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    TK5A53D TK5A53D PDF

    Untitled

    Abstract: No abstract text available
    Text: TK5A65DA MOSFETs Silicon N-Channel MOS π-MOS TK5A65DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.34 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 3.1 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V)


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    TK5A65DA O-220SIS PDF

    K5A50D

    Abstract: K5A50
    Text: TK5A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK5A50D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 1.3 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.)


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    TK5A50D 15mitation, K5A50D K5A50 PDF

    Untitled

    Abstract: No abstract text available
    Text: TK5A65DA MOSFETs Silicon N-Channel MOS π-MOS TK5A65DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.34 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 3.1 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V)


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    TK5A65DA O-220SIS PDF

    K5A65D

    Abstract: TK5A TK5A65D
    Text: TK5A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK5A65D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.6 S (typ.)


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    TK5A65D K5A65D TK5A TK5A65D PDF

    TK5A53D

    Abstract: No abstract text available
    Text: TK5A53D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ TK5A53D スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.2 Ω (標準) : IDSS = 10 A (最大) 漏れ電流が低い。 2.7 ± 0.2 10 ± 0.3 Ф3.2 ± 0.2


    Original
    TK5A53D TK5A53D PDF

    Untitled

    Abstract: No abstract text available
    Text: TK5A65DA MOSFETs Silicon N-Channel MOS π-MOS TK5A65DA 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) (4) Low drain-source on-resistance: RDS(ON) = 1.34 Ω (typ.) High forward transfer admittance: |Yfs| = 3.1 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V)


    Original
    TK5A65DA O-220SIS PDF

    K5A65D

    Abstract: TK5A TK5A65D
    Text: TK5A65D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII TK5A65D Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 2.6 S (typ.)


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    TK5A65D K5A65D TK5A TK5A65D PDF

    K5A50D

    Abstract: K5A50 TK5A50D K5A50D DATASHEET K*A50D TK5A
    Text: TK5A50D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π−MOSⅦ TK5A50D ○ スイッチングレギュレータ用 単位: mm : RDS (ON) = 1.3 Ω (標準) z オン抵抗が低い。 z 順方向伝達アドミタンスが高い。 : |Yfs| = 3.0 S (標準)


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    TK5A50D SC-67 2-10U1B K5A50D K5A50 TK5A50D K5A50D DATASHEET K*A50D TK5A PDF