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    TK10A60 Search Results

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    TK10A60 Price and Stock

    Toshiba America Electronic Components TK10A60W5,S5VX

    MOSFET N-CH 600V 9.7A TO220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK10A60W5,S5VX Tube 48 1
    • 1 $2.7
    • 10 $2.7
    • 100 $2.7
    • 1000 $0.89157
    • 10000 $0.825
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    Mouser Electronics TK10A60W5,S5VX 195
    • 1 $2.6
    • 10 $2.5
    • 100 $1.23
    • 1000 $0.825
    • 10000 $0.825
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    Toshiba America Electronic Components TK10A60W,S4VX

    MOSFET N-CH 600V 9.7A TO220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK10A60W,S4VX Tube 28 1
    • 1 $3.66
    • 10 $3.66
    • 100 $3.66
    • 1000 $1.27284
    • 10000 $1.25
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    Mouser Electronics TK10A60W,S4VX 64
    • 1 $2.91
    • 10 $2.37
    • 100 $1.44
    • 1000 $1.25
    • 10000 $1.25
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    Toshiba America Electronic Components TK10A60E,S5X

    MOSFET N-CH 600V 10A TO220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK10A60E,S5X Tube
    • 1 -
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    Toshiba America Electronic Components TK10A60W,S4X

    MOSFET N-CH 600V 9.7A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK10A60W,S4X Tube 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.4625
    Buy Now

    Toshiba America Electronic Components TK10A60D(STA4,Q,M)

    MOSFET N-CH 600V 10A TO220SIS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK10A60D(STA4,Q,M) Tube
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    TK10A60 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TK10A60D Toshiba Japanese - Transistors - Mosfets Original PDF
    TK10A60D Toshiba Transistors - Mosfets Original PDF
    TK10A60D(Q) Toshiba TK10A60D - Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220SIS Original PDF
    TK10A60D(Q,M) Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 10A TO220SIS Original PDF
    TK10A60D(STA4,Q,M) Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 10A TO220SIS Original PDF
    TK10A60E,S4X Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V TO220SIS Original PDF
    TK10A60E,S5X Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V TO220SIS Original PDF
    TK10A60W Toshiba TK10A60 - TRANSISTOR POWER, FET, FET General Purpose Power Original PDF
    TK10A60W Toshiba Japanese - Transistors - Mosfets Original PDF
    TK10A60W Toshiba Transistors - Mosfets Original PDF
    TK10A60W,S4X Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N CH 600V 9.7A TO-220 Original PDF
    TK10A60W5,S5VX Toshiba Semiconductor and Storage Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 9.7A TO-220SIS Original PDF
    TK10A60W,S4VX Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 9.7A TO-220SIS Original PDF

    TK10A60 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TK10A60W5 MOSFETs Silicon N-Channel MOS DTMOS TK10A60W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) Fast reverse recovery time: trr = 85 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.35 Ω (typ.) by used to Super Junction Structure : DTMOS


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    TK10A60W5 O-220SIS PDF

    k10a60d

    Abstract: No abstract text available
    Text: TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type -MOS VII TK10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.58 (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


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    TK10A60D k10a60d PDF

    k10a60d

    Abstract: toshiba K10A60D transistor K10A60D K10A60 TK10A60D 20/equivalent for k10a60d
    Text: TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK10A60D Switching Regulator Applications • • • • Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.62Ω (typ.) High forward transfer admittance: |Yfs| = 6.0S (typ.)


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    TK10A60D k10a60d toshiba K10A60D transistor K10A60D K10A60 TK10A60D 20/equivalent for k10a60d PDF

    TK10A60D5

    Abstract: TK10A60D
    Text: TK10A60D5 MOSFETs Silicon N-Channel MOS π-MOS TK10A60D5 1. Applications • Switching Voltage Regulators 2. Features (1) Fast reverse recovery time: trrf = 50 ns (typ.), trr = 90 ns (typ.) (2) Low drain-source on-resistance: RDS(ON) = 0.8 Ω (typ.)


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    TK10A60D5 O-220SIS TK10A60D5 TK10A60D PDF

    TK10A60D5

    Abstract: 600VTH TK10A60D
    Text: TK10A60D5 MOSFET シリコンNチャネルMOS形 π-MOS TK10A60D5 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) 逆回復時間が早い。: trrf = 50 ns (標準), trr = 90 ns (標準) (2) オン抵抗が低い。: RDS(ON) = 0.8 Ω (標準)


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    TK10A60D5 O-220SIS SC-67 2-10U1S TK10A60D5 600VTH TK10A60D PDF

    k10a60d

    Abstract: K10A60 TK10A60D equivalent for k10a60d toshiba K10A60D
    Text: TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅦ TK10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original
    TK10A60D k10a60d K10A60 TK10A60D equivalent for k10a60d toshiba K10A60D PDF

    Untitled

    Abstract: No abstract text available
    Text: TK10A60W MOSFETs Silicon N-Channel MOS DTMOS TK10A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.5 mA)


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    TK10A60W O-220SIS PDF

    k10a60d

    Abstract: TK10A60D K10A60 VDD400 equivalent for k10a60d k10a IAR10
    Text: TK10A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ TK10A60D ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.58 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)


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    TK10A60D SC-67 2-10U1B k10a60d TK10A60D K10A60 VDD400 equivalent for k10a60d k10a IAR10 PDF

    Untitled

    Abstract: No abstract text available
    Text: TK10A60W MOSFET シリコンNチャネルMOS形 DTMOS TK10A60W 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.327 Ω (標準) (2)


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    TK10A60W O-220SIS PDF

    K10A60

    Abstract: k10a60d TK10A60D equivalent for k10a60d tk10a60d equivalent toshiba K10A60D TK10A60 transistor K10A60D k10a TC200
    Text: TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII TK10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.58 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original
    TK10A60D K10A60 k10a60d TK10A60D equivalent for k10a60d tk10a60d equivalent toshiba K10A60D TK10A60 transistor K10A60D k10a TC200 PDF

    k10a60d

    Abstract: No abstract text available
    Text: TK10A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOS VII TK10A60D Unit: mm Switching Regulator Applications • • • • Low drain-source ON-resistance: RDS (ON) = 0.58 Ω (typ.) High forward transfer admittance: |Yfs| = 6.0 S (typ.)


    Original
    TK10A60D k10a60d PDF

    k10a60d

    Abstract: K10A60 tk10a60d VDD400 equivalent for k10a60d MJ500
    Text: TK10A60D 東芝電界効果トランジスタ シリコンNチャネルMOS形 π-MOSⅦ TK10A60D ○ スイッチングレギュレータ用 z 単位: mm オン抵抗が低い。 : RDS (ON) = 0.62 Ω (標準) z 順方向伝達アドミタンスが高い。: ⎪Yfs⎪ = 6.0 S (標準)


    Original
    TK10A60D SC-67 2-10U1B 20070701-JA k10a60d K10A60 tk10a60d VDD400 equivalent for k10a60d MJ500 PDF

    TK10A60E

    Abstract: tk10a60
    Text: TK10A60E MOSFETs Silicon N-Channel MOS π-MOS TK10A60E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.54 Ω (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 600 V) (3)


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    TK10A60E O-220SIS TK10A60E tk10a60 PDF

    Untitled

    Abstract: No abstract text available
    Text: TK10A60W MOSFETs Silicon N-Channel MOS DTMOS TK10A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original
    TK10A60W O-220SIS PDF

    Untitled

    Abstract: No abstract text available
    Text: TK10A60W5 MOSFETs Silicon N-Channel MOS DTMOS TK10A60W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) Fast reverse recovery time: trr = 85 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.35 Ω (typ.) by used to Super Junction Structure : DTMOS


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    TK10A60W5 O-220SIS PDF

    circuit diagram of luminous inverter

    Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG
    Text: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances


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    BCE0013C circuit diagram of luminous inverter TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG PDF

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original
    PDF

    fast tlp785

    Abstract: TK10A60D 5252 F solar tcv7116 TPH1400ANH
    Text: System Catalog 2012-12 Semiconductors for Power Supplies SEMICONDUCTOR & STORAGE PRODUCTS http://www.semicon.toshiba.co.jp/eng –2 Power Supply Circuit Types and Their Applications Switching Power Supplies AC-DC Resonant Half-Bridge Power Supplies Up to around 800 W


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    SCE0024F fast tlp785 TK10A60D 5252 F solar tcv7116 TPH1400ANH PDF

    TEA1832

    Abstract: No abstract text available
    Text: UM10862 TEA1832DB1253 45 W demo board Rev. 1 — 13 May 2015 User manual Document information Info Content Keywords TEA1832DB1253, TEA1832TS, TEA1832LTS, notebook adapter Abstract This user manual provides the specification, schematics and PCB layout of the TEA1832DB1253 45 W 90 W peak demo board. See the data


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    UM10862 TEA1832DB1253 TEA1832DB1253, TEA1832TS, TEA1832LTS, TEA1832TS/LTS TEA1832 PDF

    RG4 DIODE

    Abstract: TK10A60D 2SK3569 2SK3911 RG-47 2SK3569 equivalent TK20A60U TK20J60U RG-47 diode 2SK3911 equivalent
    Text: 09tf-B-2 AC入力電源用450-650V MOSFET 新シリーズ New Generation 450-650V MOSFET for AC input Switching Power Supply チップデザイン最適化により容量特性の低減。さらにラインアップを大幅に拡充したπ-MOS最新シリーズと


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    09tf-B-2 AC450-650V 50-650V 600VDTMOS 50650V -MOSVIQg40% O-220SIS 2SK3569 TK10A60D TK20J60U RG4 DIODE TK10A60D 2SK3569 2SK3911 RG-47 2SK3569 equivalent TK20A60U TK20J60U RG-47 diode 2SK3911 equivalent PDF

    2SK3567 equivalent

    Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
    Text: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2


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    BCE0017F E-28831 BCE0017G 2SK3567 equivalent 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603 PDF

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


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    SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01 PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF