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    TK100 Price and Stock

    Toshiba America Electronic Components TK100E10N1,S1X

    MOSFET N-CH 100V 100A TO220
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK100E10N1,S1X Tube 4,055 1
    • 1 $3.71
    • 10 $3.71
    • 100 $2.5225
    • 1000 $1.91992
    • 10000 $1.7875
    		Buy Now
    Mouser Electronics TK100E10N1,S1X 303
    • 1 $3.41
    • 10 $3.39
    • 100 $2.52
    • 1000 $1.81
    • 10000 $1.81
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    Arrow Electronics TK100E10N1,S1X 3 3
    • 1 -
    • 10 $1.539
    • 100 $1.529
    • 1000 $1.529
    • 10000 $1.529
    		Buy Now
    TTI TK100E10N1,S1X Tube 50
    • 1 -
    • 10 -
    • 100 $2.13
    • 1000 $2.13
    • 10000 $2.13
    		Buy Now

    Toshiba America Electronic Components TK100S04N1L,LQ

    MOSFET N-CH 40V 100A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK100S04N1L,LQ Cut Tape 3,155 1
    • 1 $2.62
    • 10 $2.175
    • 100 $1.7314
    • 1000 $1.24303
    • 10000 $1.24303
    		Buy Now
    Mouser Electronics TK100S04N1L,LQ 2,476
    • 1 $2.62
    • 10 $2.18
    • 100 $1.74
    • 1000 $1.25
    • 10000 $1.13
    		Buy Now

    Toshiba America Electronic Components TK100S04N1L,LXHQ

    MOSFET N-CH 40V 100A DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK100S04N1L,LXHQ Reel 2,000 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.61875
    		Buy Now
    TK100S04N1L,LXHQ Cut Tape 594 1
    • 1 $1.6
    • 10 $1.31
    • 100 $1.0187
    • 1000 $0.7034
    • 10000 $0.7034
    		Buy Now
    Mouser Electronics TK100S04N1L,LXHQ 17,681
    • 1 $1.6
    • 10 $1.31
    • 100 $1.02
    • 1000 $0.704
    • 10000 $0.62
    		Buy Now

    Toshiba America Electronic Components TK100L60W,VQ

    MOSFET N-CH 600V 100A TO3P
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TK100L60W,VQ Tube 432 1
    • 1 $32.46
    • 10 $28.841
    • 100 $25.2252
    • 1000 $25.2252
    • 10000 $25.2252
    		Buy Now
    Mouser Electronics TK100L60W,VQ 53
    • 1 $32.46
    • 10 $28.85
    • 100 $25.22
    • 1000 $24.63
    • 10000 $24.63
    		Buy Now
    Bristol Electronics TK100L60W,VQ 20 1
    • 1 $14.4
    • 10 $14.4
    • 100 $14.4
    • 1000 $14.4
    • 10000 $14.4
    		Buy Now
    Quest Components TK100L60W,VQ 16
    • 1 $15.6
    • 10 $15.6
    • 100 $15.6
    • 1000 $15.6
    • 10000 $15.6
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    Amphenol Sine Systems AUTK-100

    UNIVERSAL HEAVY DUTY CONTACT CRI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey AUTK-100 Box 228 1
    • 1 $231.94
    • 10 $224.46167
    • 100 $209.49834
    • 1000 $209.49834
    • 10000 $209.49834
    		Buy Now
    Master Electronics AUTK-100 6
    • 1 $214.83
    • 10 $208.44
    • 100 $200.02
    • 1000 $200.02
    • 10000 $200.02
    		Buy Now
    Find more TK100 price and stock on Findchips.com

    TK100 Datasheets (50)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TK100 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    TK-100-0050 Polara Engineering Delay Line ACTIVE DELAY LINE 1IN 50NS MAX Scan PDF
    TK-100-0075 Polara Engineering Delay Line ACTIVE DELAY LINE 1IN 75NS MAX Scan PDF
    TK-100-0100 Polara Engineering Delay Line ACTIVE DELAY LINE 1IN 100NS MAX Scan PDF
    TK-100-0150 Polara Engineering Delay Line ACTIVE DELAY LINE 1IN 150NS MAX Scan PDF
    TK-100-0250 Polara Engineering Delay Line ACTIVE DELAY LINE 1IN 250NS MAX Scan PDF
    TK-100-0500 Polara Engineering Delay Line ACTIVE DELAY LINE 1IN 500NS MAX Scan PDF
    TK1000A-R015 Teccor Electronics Communications: Telecommunications Network Line Protection Original PDF
    TK1000B-N000 Teccor Electronics Communications: Telecommunications Network Line Protection Original PDF
    TK1000B-R015 Teccor Electronics Communications: Telecommunications Network Line Protection Original PDF
    TK1000N-N000 Teccor Electronics Communications: Telecommunications Network Line Protection Original PDF
    TK1000N-R015 Teccor Electronics Communications: Telecommunications Network Line Protection Original PDF
    TK1005800000G Amphenol Anytek Connectors, Interconnects - Terminal Blocks - Wire to Board - TERM BLK 10P SIDE ENTRY 5MM PCB Original PDF
    TK100A06N1 Toshiba TK100A06N1 - Nch 30V Original PDF
    TK100A06N1 Toshiba Japanese - Transistors - Mosfets Original PDF
    TK100A06N1 Toshiba Transistors - Mosfets Original PDF
    TK100A06N1,S4X Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 100A TO-220 Original PDF
    TK100A08N1 Toshiba TK100A08N1 - Nch 60V Original PDF
    TK100A08N1 Toshiba Transistors - Mosfets Original PDF
    TK100A08N1 Toshiba Japanese - Transistors - Mosfets Original PDF

    TK100 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TK100F04K3L MOSFETs Silicon N-channel MOS U-MOS TK100F04K3L 1. Applications • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 10 V)


    Original     		PDF TK100F04K3L AEC-Q101 O-220SM

    K100F06K

    Abstract: TK100 TK100F06K3
    Text: TK100F06K3 東芝電界効果トランジスタ シリコンNチャネルMOS形 U-MOSIV TK100F06K3 ○ スイッチングレギュレータDC-DC コンバータ用 ○ モータドライブ用 • 取り扱いが簡単なエンハンスメントタイプです。


    Original     		PDF TK100F06K3 K100F06K TK100 TK100F06K3

    Untitled

    Abstract: No abstract text available
    Text: TK100A06N1 MOSFET シリコンNチャネルMOS形 U-MOS-H TK100A06N1 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 2.2 mΩ (標準) (VGS = 10 V) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 60 V)


    Original     		PDF TK100A06N1 O-220SIS

    Untitled

    Abstract: No abstract text available
    Text: TK100A10N1 MOSFET シリコンNチャネルMOS形 U-MOS-H TK100A10N1 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 3.1 mΩ (標準) (VGS = 10 V) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 100 V)


    Original     		PDF TK100A10N1 O-220SIS

    Untitled

    Abstract: No abstract text available
    Text: TK100E10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100E10N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 2.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)


    Original     		PDF TK100E10N1 O-220

    Untitled

    Abstract: No abstract text available
    Text: TK100E06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100E06N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


    Original     		PDF TK100E06N1 O-220

    Untitled

    Abstract: No abstract text available
    Text: TK100F04K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK100F04K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications • Low leakage current: IDSS = 10 A (max) (VDS = 40 V) • Enhancement-model: Vth = 3.0 to 4.0 V (VDS = 10 V, ID = 1 mA)


    Original     		PDF TK100F04K3

    TK100L60W

    Abstract: 2-21F1S
    Text: TK100L60W MOSFETs Silicon N-Channel MOS DTMOS TK100L60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.015 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original     		PDF TK100L60W TK100L60W 2-21F1S

    Untitled

    Abstract: No abstract text available
    Text: TK100F04K3L MOSFETs Silicon N-channel MOS U-MOS TK100F04K3L 1. Applications • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)


    Original     		PDF TK100F04K3L O-220SM

    Untitled

    Abstract: No abstract text available
    Text: TK100A08N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100A08N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)


    Original     		PDF TK100A08N1 O-220SIS

    Untitled

    Abstract: No abstract text available
    Text: TK100E06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100E06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


    Original     		PDF TK100E06N1 O-220

    Untitled

    Abstract: No abstract text available
    Text: TK100A06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


    Original     		PDF TK100A06N1 O-220SIS

    Untitled

    Abstract: No abstract text available
    Text: TK100E10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100E10N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.8 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)


    Original     		PDF TK100E10N1 O-220

    Untitled

    Abstract: No abstract text available
    Text: TK100E08N1 MOSFET シリコンNチャネルMOS形 U-MOS-H TK100E08N1 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 2.6 mΩ (標準) (VGS = 10 V) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 80 V)


    Original     		PDF TK100E08N1 O-220

    toshiba transistor date code marking

    Abstract: TK100F06K3 K100F06K
    Text: TK100F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK100F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 174 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 60 V)


    Original     		PDF TK100F06K3 toshiba transistor date code marking TK100F06K3 K100F06K

    Untitled

    Abstract: No abstract text available
    Text: TK100E08N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100E08N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)


    Original     		PDF TK100E08N1 O-220

    Untitled

    Abstract: No abstract text available
    Text: TK100E06N1 MOSFET シリコンNチャネルMOS形 U-MOS-H TK100E06N1 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 1.9 mΩ (標準) (VGS = 10 V) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 60 V)


    Original     		PDF TK100E06N1 O-220

    Untitled

    Abstract: No abstract text available
    Text: TK100F06K3 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOSIV TK100F06K3 Swiching Regulator, DC-DC Converter Applications Motor Drive Applications High forward transfer admittance: |Yfs| = 174 S (typ.) • Low leakage current: IDSS = 10 A (max) (VDS = 60 V)


    Original     		PDF TK100F06K3

    Untitled

    Abstract: No abstract text available
    Text: TK100A10N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100A10N1 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V)


    Original     		PDF TK100A10N1 O-220SIS

    Untitled

    Abstract: No abstract text available
    Text: TK100A06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100A06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


    Original     		PDF TK100A06N1 O-220SIS

    Untitled

    Abstract: No abstract text available
    Text: TK100S04N1L MOSFETs Silicon N-channel MOS U-MOS-H TK100S04N1L 1. Applications • Automotive • Motor Drivers • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)


    Original     		PDF TK100S04N1L

    Untitled

    Abstract: No abstract text available
    Text: TK100E08N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100E08N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.6 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V)


    Original     		PDF TK100E08N1 O-220

    Untitled

    Abstract: No abstract text available
    Text: TK100E06N1 MOSFETs Silicon N-channel MOS U-MOS-H TK100E06N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)


    Original     		PDF TK100E06N1 O-220

    Untitled

    Abstract: No abstract text available
    Text: TK100L60W MOSFETs Silicon N-Channel MOS DTMOS TK100L60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.015 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching


    Original     		PDF TK100L60W