SOT-103
Abstract: SOT103 BFR591 transistor SOT103 MSB037
Text: • tjbS3T31 DDBlTiE TET M APX Preliminary specification NPN 8 GHz wideband transistor BFR591 N AMER PHIL I P S / D I S CR E T E FEATURES b^E » ■ PINNING • High power gain PIN • Low noise figure • High transition frequency • Gold metallization ensures
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BFR591
BFR591
OT103
MSB037
OT103.
is21i2
SOT-103
SOT103
transistor SOT103
MSB037
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BLW 95
Abstract: No abstract text available
Text: h*\E t> m b b s a ^ a i o o s T H b i o?i i IAPX N A PIER PHILIPS/DISCRETE BLW 86 H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated h.f. and v.h.f. transmitters with a nominal supply voltage of 28 V. The transistor is resistance stabilized and is
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MRC23
Abstract: URC204 BSP152
Text: Philips Semiconductors bbS3T31 0023053 IflS IAPX Product specification N-channel enhancement mode vertical D-MOS transistor BSP152 N A PIER P H I L I P S / D I S C R E T E FEATURES b7E SYMBOL v DS • High-speed switching • No secondary breakdown. N-channel enhancement mode
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bbS3T31
BbPl52
OT223
OT223
0023flSfl
BSP152
MRC209
MRC23
URC204
BSP152
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification High voltage optocouplers SL5582W/S L5583W FEATURES • A wide body encapsulation with a pin distance of 10.16 mm • An external clearance of 9.6 mm minimum and an external creepage of 10 mm minimum • High current transfer ratio and a
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SL5582W/S
L5583W
SL5582W
SL5583W
OT228
Ga582W/SL5583W
SL5582W/SL5583W
fak53331
bbS3131
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m2131
Abstract: diode lt 246 M2132 BYT230PI-300 BYT230PIV-200 IEC134 M3037 D1075
Text: N AMER PHILIPS/DISCRETE D E V tL U H M L N I SSE D • bbS3T31 D 0 2 S 4 ci3 ÜAIA S ■ BYT230PIV200-400 T h is data sheet co n ta in s advance in fo rm a tio n and sp e c ific a tio n s are su b je ct to change w it h o u t n o tic e . 7 ^ ¿ > 3 -/9 ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES
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hbS3131
D02S4ci3
BYT230PIV-200-400
M2135
M3039
m2131
diode lt 246
M2132
BYT230PI-300
BYT230PIV-200
IEC134
M3037
D1075
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Untitled
Abstract: No abstract text available
Text: l N AUER PHIL IPS/DISCRETE 25E D ^ 5 3 1 3 1 00227b? 5 • BYW31 SERIES TZOZ - i 9 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in DO-4 metal envelopes, featuring low forward voltage drop, ultra fast reverse recovery times, very low stored charge and soft recovery
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00227b?
BYW31
D022774
T-03-19
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