100FXFG13
Abstract: 100FXFH13
Text: TOSHIBA 10OFXFG 13,1 OOFXFH13 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 100FXFG13, 100FXFH13 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS Repetitive Peak Reverse Voltage V r r m = 3300V Average Forward Current ÏF AV = 1(>0a Reverse Recovery Time (Tj = 25°C) tj»j»—3.1/¿s
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10OFXFG13#
10OFXFH13
100FXFG13,
100FXFH13
100FXFG13
CATHOD13
100FXFG13
100FXFH13
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200FXH13
Abstract: 200FXG13
Text: TOSHIBA 200FXG13#200FXH 13 TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE 200FXG13, 200FXH13 Unit in mm HIGH SPEED RECTIFIER APPLICATIONS • • • Repetitive Peak Reverse Voltage VRRM = 3000V Average Forward Current ÏF A V V O C A Reverse Recovery Time (Tj = 25°C tj»j»—4.5 jus
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200FXG13
200FXH
200FXG13,
200FXH13
200FXG13
200FXH13
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A3P1000
Abstract: ProASIC3 Datasheet A3P125 ProASIC3 A3P250 A3P1000 application notes FG144 FG256 FG484 VQ100 A3P060
Text: v1.0 Automotive ProASIC3 Flash Family FPGAs Features and Benefits Low Power • 1.5 V Core Voltage • Support for 1.5-V-Only Systems • Low-Impedance Flash Switches High-Temperature AEC-Q100–Qualified Devices • Grade 2 105°C TA 115°C TJ • Grade 1 125°C TA (135°C TJ)
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AEC-Q100
A3P1000
ProASIC3
Datasheet A3P125
ProASIC3 A3P250
A3P1000 application notes
FG144
FG256
FG484
VQ100
A3P060
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flash "high temperature data retention" mechanism
Abstract: A3P060 A3P1000 A3P125 A3P250 AECQ100 AEC-Q100 FG144 FG256 FG484
Text: v1.0 Automotive ProASIC3 Flash Family FPGAs Features and Benefits Low Power • 1.5 V Core Voltage • Support for 1.5-V-Only Systems • Low-Impedance Flash Switches High-Temperature AEC-Q100–Qualified Devices • Grade 2 105°C TA 115°C TJ • Grade 1 125°C TA (135°C TJ)
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AEC-Q100
flash "high temperature data retention" mechanism
A3P060
A3P1000
A3P125
A3P250
AECQ100
FG144
FG256
FG484
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PDF
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Untitled
Abstract: No abstract text available
Text: Automotive ProASIC 3 Datasheet P ro du c t Br ie f ® 1 – Automotive ProASIC®3 Flash Family FPGAs Features and Benefits Low Power High-Temperature AEC-Q100–Qualified Devices • • • Grade 2 105°C TA 115°C TJ Grade 1 125°C TA (135°C TJ) PPAP Documentation
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AEC-Q100
130-nm,
64-Bit
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A3P600
Abstract: A3P060 A3P1000 A3P125 A3P250 AECQ100 AEC-Q100 FG144 FG256 FG484
Text: v1.0 Automotive ProASIC3 Flash Family FPGAs Features and Benefits Low Power • 1.5 V Core Voltage • Support for 1.5-V-Only Systems • Low-Impedance Flash Switches High-Temperature AEC-Q100–Qualified Devices • Grade 2 105°C TA 115°C TJ • Grade 1 125°C TA (135°C TJ)
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AEC-Q100
A3P600
A3P060
A3P1000
A3P125
A3P250
AECQ100
FG144
FG256
FG484
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PDF
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1100 847 e11
Abstract: c 1383
Text: v1.0 Automotive ProASIC3 Flash Family FPGAs Features and Benefits Low Power • 1.5 V Core Voltage • Support for 1.5-V-Only Systems • Low-Impedance Flash Switches High-Temperature AEC-Q100–Qualified Devices • Grade 2 105°C TA 115°C TJ • Grade 1 125°C TA (135°C TJ)
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AEC-Q100
1100 847 e11
c 1383
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PDF
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Untitled
Abstract: No abstract text available
Text: Automotive ProASIC 3 Datasheet P ro du c t Br ie f ® 1 – Automotive ProASIC®3 Flash Family FPGAs Features and Benefits Low Power High-Temperature AEC-Q100–Qualified Devices • • • Grade 2 105°C TA 115°C TJ Grade 1 125°C TA (135°C TJ) PPAP Documentation
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AEC-Q100
130-nm,
64-Bit
A3P1000
IO181RSB2
IO178RSB2
IO175RSB2
IO169RSB2
IO166RSB2
IO160RSB2
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A3P600
Abstract: A3P060 A3P1000 A3P125 A3P250 AECQ100 AEC-Q100 FG144 FG256 FG484
Text: v1.1 Automotive ProASIC3 Flash Family FPGAs Features and Benefits Low Power • 1.5 V Core Voltage • Support for 1.5-V-Only Systems • Low-Impedance Flash Switches High-Temperature AEC-Q100–Qualified Devices • Grade 2 105°C TA 115°C TJ • Grade 1 125°C TA (135°C TJ)
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AEC-Q100
A3P600
A3P060
A3P1000
A3P125
A3P250
AECQ100
FG144
FG256
FG484
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PDF
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A3P1000 application notes
Abstract: A3P060 ACTEL FBGA 144 A3P1000 ProASIC3 ProASIC3 Flash Family
Text: v1.1 Automotive ProASIC3 Flash Family FPGAs Features and Benefits Low Power • 1.5 V Core Voltage • Support for 1.5-V-Only Systems • Low-Impedance Flash Switches High-Temperature AEC-Q100–Qualified Devices • Grade 2 105°C TA 115°C TJ • Grade 1 125°C TA (135°C TJ)
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AEC-Q100
A3P1000 application notes
A3P060
ACTEL FBGA 144
A3P1000
ProASIC3
ProASIC3 Flash Family
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PDF
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ProASIC3
Abstract: A3P1000 application notes FIPS192 A3P060 A3P250 ACTEL Actel a3p125 FIPS-192 A3P1000 ProASIC3 Flash Family
Text: v1.0 Automotive ProASIC3 Flash Family FPGAs Features and Benefits Low Power • 1.5 V Core Voltage • Support for 1.5-V-Only Systems • Low-Impedance Flash Switches High-Temperature AEC-Q100–Qualified Devices • Grade 2 105°C TA 115°C TJ • Grade 1 125°C TA (135°C TJ)
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AEC-Q100
ProASIC3
A3P1000 application notes
FIPS192
A3P060
A3P250 ACTEL
Actel a3p125
FIPS-192
A3P1000
ProASIC3 Flash Family
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PDF
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S12 MARKING DIODE
Abstract: S12 MARKING CODE DIODE diode marking s12 s12 diode BBY39
Text: Short-form product specification Philips Semiconductors Double variable capacitance diode BBY39 QUICK REFERENCE DATA APPLICATIONS • Electronic tuners in satellite TV systems. SYMBOL DESCRIPTION Vr continuous reverse voltage Tj operating junction temperature
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BBY39
S12 MARKING DIODE
S12 MARKING CODE DIODE
diode marking s12
s12 diode
BBY39
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PDF
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SP00070
Abstract: SMD 5 PIN PAL1 SJ00029
Text: INTEGRATED CIRCUITS im m A B T 2 2 V 1 O A /B BiCMOS versatile PAL device Product specification 1995 Feb 01 Military Data Handbook Philips Semiconductors PHILIPS V\ PHILIPS rtv / 7 1 1 0 fl2 tj ODflflELO bflT This Material Copyrighted By Its Respective Manufacturer
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ABT22V1OA/B
7110fl2tj
ABT22V10
711002b
0Dflfi274
ABT22V10A/B
0INV10
d1nv10
outv10
SP00070
SMD 5 PIN PAL1
SJ00029
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PDF
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Untitled
Abstract: No abstract text available
Text: DF3A6.8LFV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A6.8LFV Product for Use Only as Protection against Electrostatic Discharge ESD . Characteristic Symbol Rating Unit Power dissipation P 150* mW Junction temperature Tj 150 °C Tstg
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Untitled
Abstract: No abstract text available
Text: DF3A6.8LFV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A6.8LFV Diodes for Protecting against ESD Lead Pb - free Characteristic Symbol Rating Unit P 150 * mW Power dissipation Junction temperature Storage temperature range Tj 150 °C
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Untitled
Abstract: No abstract text available
Text: DF3A3.6FV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A3.6FV Product for Use Only as Protection against Electrostatic Discharge ESD . Characteristics Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg
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diode zener 3FV
Abstract: No abstract text available
Text: DF3A3.3FV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A3.3FV Product for Use Only as Protection against Electrostatic Discharge ESD . Characteristics Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5439 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5439 Unit in mm SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS INVERTER LIGHTING APPLICATIONS • • Excellent Switching Times : tj. = 0.2 /us Typ. ,
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2SC5439
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20M diode zener
Abstract: MARKING LY toshiba U02Z300 U02Z300-X U02Z300-Y U02Z300-Z TOSHIBA DIODE GLASS
Text: TOSHIBA U02Z300 TOSHIBA DIODE CONSTANT VOLTAGE REGULATION SILICON DIFFUSED JUNCTION TYPE ZENER DIODE U02Z300 Unit in mm MAXIMUM RATINGS Ta = 25°C CHARACTERISTIC Power Dissipation Junction Temperature Storage Temperature Range SYMBOL p* Tj Tstg RATING 200
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U02Z300
t-10ms
20M diode zener
MARKING LY toshiba
U02Z300
U02Z300-X
U02Z300-Y
U02Z300-Z
TOSHIBA DIODE GLASS
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PDF
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Untitled
Abstract: No abstract text available
Text: DF3A3.3FV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A3.3FV Product for Use Only as Protection against Electrostatic Discharge ESD . Characteristics Symbol Rating Unit Power dissipation P* 150 mW Junction temperature Tj 150 °C Tstg
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Diagonal
Abstract: UDA1325 DA1325
Text: INTEGRATED CIRCUITS SHEET f.•-y^ZZZ K . & n tj UNIVERSAL SERIAL BUS m BUS UDA1325 Universal Serial Bus USB) CODEC 1999 May 10 Preliminary specification File under Integrated Circuits, IC01 Philips Semiconductors PHILIPS PHILIPS Philips Semiconductors
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UDA1325
UDA1325
SCA64
545002/750/01/pp52
Diagonal
DA1325
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PDF
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marking AU
Abstract: No abstract text available
Text: DF3A5.6LFV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A5.6LFV Diodes for Protecting against ESD Lead Pb - free Characteristic Symbol Rating Unit P 150 * mW Power dissipation Junction temperature Storage temperature range Tj 150 °C
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Untitled
Abstract: No abstract text available
Text: DF2S16CT TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF2S16CT Product for Use Only as Protection against Electrostatic Discharge ESD . Characteristic Symbol Rating Unit Power dissipation P* 150* mW Junction temperature Tj 150 °C Tstg
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DF2S16CT
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Untitled
Abstract: No abstract text available
Text: DF3A6.8LFV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A6.8LFV Diodes for Protecting against ESD Characteristic Symbol Rating Unit Power dissipation P 150 * mW Junction temperature Tj 150 °C Tstg −55~150 °C Storage temperature range
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