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    TIP3055 DARLINGTON TRANSISTORS Search Results

    TIP3055 DARLINGTON TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TIP3055 DARLINGTON TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    tip142/TIP147 AMPLIFIER CIRCUIT

    Abstract: tip141 equivalent TIP35C EQUIVALENT BDV65, BDV64 BDV65 TIP35C BDV65A BDV65B BDW83A BDW83B
    Text: Power Transistors TO-218 Case* Continued General Purpose Amplifier TYPE NO. IC PD (A) (W) BVCBO BVCEO hFE @ IC @ VCE VCE(SAT) @ IC (V) (V) MIN MIN MIN MAX 125 60 60 1,000 - 5.0 4.0 2.0 5.0 60* 12 125 80 80 1,000 - 5.0 4.0 2.0 5.0 60* BDV64B 12 125 100


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    O-218 BDV64B BDW83A BDW84A BDW83B BDW84B BDW83C BDW84C TIP33A TIP34A tip142/TIP147 AMPLIFIER CIRCUIT tip141 equivalent TIP35C EQUIVALENT BDV65, BDV64 BDV65 TIP35C BDV65A BDV65B BDW83A BDW83B PDF

    tip142/TIP147 AMPLIFIER CIRCUIT

    Abstract: BDV65, BDV64 TIP36C to-247 BDW83C TIP147 tip147 data sheet TIP2955 TIP35C BDV65A BDV65B
    Text: Power Transistors TO-218 Case* Continued General Purpose Amplifier TYPE NO. IC PD (A) (W) BVCBO BVCEO hFE @ IC @ VCE VCE(SAT) @ IC (V) (V) MIN MIN MIN MAX 125 60 60 1,000 - 5.0 4.0 2.0 5.0 60* 12 125 80 80 1,000 - 5.0 4.0 2.0 5.0 60* BDV64B 12 125 100


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    O-218 BDV64B BDW84A BDV65 BDV64 BDV65A BDV64A BDV65B BDW83A BDW83B tip142/TIP147 AMPLIFIER CIRCUIT BDV65, BDV64 TIP36C to-247 BDW83C TIP147 tip147 data sheet TIP2955 TIP35C BDV65A BDV65B PDF

    BU508 darlington

    Abstract: TO247 CASE tip142/TIP147 AMPLIFIER CIRCUIT data sheet bu508d ic top 247 tip147 BDV65, BDV64 BU508 TIP54 TIP3055 datasheet
    Text: Power Transistors TO-218 Case* NPN High Voltage Switching TYPE NO. IC A PD (W) BVCBO (V) BVCEO (V) VCE(SAT) (V) @ IC @ IB (A) (mA) toff µs) (µ fT (MHz) †TYP †TYP MIN MIN MAX MAX MIN 2N6931* 10 150 350 300 1.0 10 2,000 3.0 - 2N6932* 10 150 450 400


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    O-218 2N6931* 2N6932* 2N6933* 2N6934* 2N6935* BU426* BU426A* TIP35C TIP36C BU508 darlington TO247 CASE tip142/TIP147 AMPLIFIER CIRCUIT data sheet bu508d ic top 247 tip147 BDV65, BDV64 BU508 TIP54 TIP3055 datasheet PDF

    mj150* darlington

    Abstract: BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp
    Text: Numeric Data Sheet Listing Data Sheet Function Page 2N3055A, MJ15015, MJ15016 15 Ampere Complementary Silicon Power Transistors 60, 120 Volts . . . . . . . . . . . . . . 29 2N3055, MJ2955 15 A Power Transistors Complementary Silicon 60 V 115 W . . . . . . . . . . . . . . . . . . . . 35


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    2N3055A, MJ15015, MJ15016 2N3055, MJ2955 2N3442 2N3771, 2N3772 2N3773* 2N6609 mj150* darlington BJT BD139 TIP102 Darlington transistor MJ31193 npn darlington transistor 200 watts MJ11029 BJT transistor 400 volts.100 amperes 300 volt 16 ampere transistor npn darlington transistor 150 watts mj15004 pnp PDF

    D40C1

    Abstract: D40C2 D40C3 D40C4 D40C5 D40C7 D40C8 D40K1 D40K2 D40K3
    Text: Small Signal Darlington Transistors hFE Part No. and Polarity V CEO NPN @ V CE & IC Operating Temperature: -55 o C to 150oC fT VCE sat & VBE(sat) @ IC & IB @ V CE & IC IC PNP Package Min. Max. VCE IC Max. Max. IC IB Min. Outline (Max. in mm or inches) Typ.


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    150oC D40C1 D40C2 D40C3 D40C4 D40C1 D40C2 D40C3 D40C4 D40C5 D40C7 D40C8 D40K1 D40K2 D40K3 PDF

    TIC106D equivalent

    Abstract: TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent
    Text: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers


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    O-220, OT-93 2M/TSP0711 TIC106D equivalent TIC106M SCR BD249 EQUIVALENT TIP41C EQUIVALENT BT137 equivalent replacement TYN412 TIC225M equivalent malaysia tic226D TIC226D equivalent tic126M equivalent PDF

    TIC106M SCR

    Abstract: TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 TIP36C EQUIVALENT BTB06-600 TIC126D equivalent TIC116D equivalent
    Text: Bourns Power Industry Standard Transistors & Thyristors Short Form Catalog NPN Transistors with ratings up to 1500 Volts; 25 Amps NPN Darlington Transistors with ratings up to 400 Volts; 25 Amps PNP Transistors with ratings up to 120 Volts; 25 Amps Silicon Controlled Rectifiers


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    O-220, OT-93 2M/TSP0904 TIC106M SCR TIC106D equivalent TIP41C EQUIVALENT TIP42C EQUIVALENT bd242 TRANSISTOR equivalent transistor equivalent of BU406 TIP36C EQUIVALENT BTB06-600 TIC126D equivalent TIC116D equivalent PDF

    TRANSISTOR BC337 SMD

    Abstract: transistor BC170 C5198 CDIL 2N2222A Transistor bd139 smd bc337 SMD PACKAGE bd140 SMD equivalent BC109 BC184 BC549 a1941 CDIL BD139
    Text: • Transistors • • • • • Small Signal Medium Power Power Darlington MOSFET CDIL Semiconductors ~ Worldwide Reach Product Profile Transistors Product Range • • Chips/Dice – Diffused Silicon Wafers Surface Mount and Leaded Semiconductor Devices


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    MPSA45 P2N2369 PN2222 MPSA05 MPSA55 P2N2369A PN2222A MPS2907A MPSA06 MPSA56 TRANSISTOR BC337 SMD transistor BC170 C5198 CDIL 2N2222A Transistor bd139 smd bc337 SMD PACKAGE bd140 SMD equivalent BC109 BC184 BC549 a1941 CDIL BD139 PDF

    2N3773 NPN Audio Power AMP Transistor

    Abstract: 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006
    Text: BIPOLAR POWER TRANSISTORS SELECTOR GUIDE SELECTION BY PACKAGE IC Range Amps VCE Range (Volts) PD (Watts) SO−8 3.0 30 2.0 (Note 2) SOT−223 0.5−3.0 30 2.0 (Note 1) DPAK 0.5-10 40-450 12.5-25 D2PAK 5.0−15 80−450 50−75 DPAK 0.5-10 40-450 12.5-25


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    OT-223 O-225AA O-126) O-220AB O-220 O-218 O-247 O-264 O-204AA O-204AE 2N3773 NPN Audio Power AMP Transistor 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006 PDF

    IRF9634

    Abstract: MJE13001 KT538A KT8296 KT829 KT940A kt8290 KT8270A MJE-13001 IRML2402
    Text: DISCRETE SEMICONDUCTOR Transistors • Bipolar Transistors Part KT6136A KT6137A КТ607А-4 КТ607Б-4 КТ646А КТ646Б КТ646В KT660A KT660Б КТ805АМ КТ805БМ КТ805ВМ КТ805ИМ KT814A KT814Б KT814B KT814Г KT815A KT815Б KT815B KT815Г


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    KT6136A KT6137A KT660A KT660 KT814A KT814 KT814B KT815A KT815 IRF9634 MJE13001 KT538A KT8296 KT829 KT940A kt8290 KT8270A MJE-13001 IRML2402 PDF

    power transistors cross reference

    Abstract: motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE
    Text: Bipolar Power Transistors In Brief . . . Motorola’s broad line of Bipolar Power Transistors includes discrete and Darlington transistors in a variety of packages from the popular surface mount DPAK at 1.75 watts to the 250 watt TO-3 and TO–264. New products


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    MJW16212 225AA) MJE13003 BUH51 power transistors cross reference motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE PDF

    equivalent transistor TIP3055

    Abstract: BD4185 BDW59 BD139.10 equivalent transistor TIP2955 TIP2955 application note BD139.6 BD139.16 2n3055 replacement 2SC1237
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP3055 PNP TIP2955 Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20 – 70 @ IC = 4.0 Adc • Collector–Emitter Saturation Voltage — VCE sat = 1.1 Vdc (Max) @ IC = 4.0 Adc


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    TIP3055 TIP2955 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C equivalent transistor TIP3055 BD4185 BDW59 BD139.10 equivalent transistor TIP2955 TIP2955 application note BD139.6 BD139.16 2n3055 replacement 2SC1237 PDF

    BZX85C12V

    Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
    Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes


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    DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E PDF

    mje15033 replacement

    Abstract: BD262 DARLINGTON 2SB554 replacement 2sc1079 replacement 2SD323 2N6254 REPLACEMENT BD262A DARLINGTON MJ2955 replacement 2SC1013 replacement 2n3055 replacement
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6576 2N6577 2N6578 NPN Silicon Power Darlington Transistors General–purpose EpiBase power Darlington transistors, suitable for linear and switching applications. • • • • • • Replacement for 2N3055 and Driver


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    2N3055 2N6576 2N6577 2N6578 TIP73B TIP74 TIP74A TIP74B TIP75 mje15033 replacement BD262 DARLINGTON 2SB554 replacement 2sc1079 replacement 2SD323 2N6254 REPLACEMENT BD262A DARLINGTON MJ2955 replacement 2SC1013 replacement 2n3055 replacement PDF

    automotive ignition tip162

    Abstract: 2sc331 2N6556 BU108 2SA648 MJE13009 2SD1815 "cross reference" FT47 MJ1000 mj295
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10012 MJH10012 NPN Silicon Power Darlington Transistor The MJ10012 and MJH10012 are high–voltage, high–current Darlington transistors designed for automotive ignition, switching regulator and motor control applications.


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    MJ10012 MJH10012 MJH10012 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A automotive ignition tip162 2sc331 2N6556 BU108 2SA648 MJE13009 2SD1815 "cross reference" FT47 MJ1000 mj295 PDF

    3904 Transistor

    Abstract: BU108 2n2222 npn bipolar junction driver ignition coil ignition coil drivers ignition control NPN POWER DARLINGTON TRANSISTORS coil driver TO-247 1N4933 equivalent bd135 TRANSISTOR REPLACEMENT GUIDE 2n2222 npn transistor footprint
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE5740 MJE5741* MJE5742* NPN Silicon Power Darlington Transistors *Motorola Preferred Device The MJE5740, 41, 42 Darlington transistors are designed for high–voltage power switching in inductive circuits. They are particularly suited for operation in applications


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    MJE5740, MJE5740 MJE5741* MJE5742* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 3904 Transistor BU108 2n2222 npn bipolar junction driver ignition coil ignition coil drivers ignition control NPN POWER DARLINGTON TRANSISTORS coil driver TO-247 1N4933 equivalent bd135 TRANSISTOR REPLACEMENT GUIDE 2n2222 npn transistor footprint PDF

    bd775

    Abstract: 2SC7 BD779 Diode BAY 61 bd776 MDS20 BD776-778-780 BUX98A AMPLIFIER 2SD718 2sb688 schematic MJW16010
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BD777 PNP BD776 BD778 BD780 * Plastic Darlington Complementary Silicon Power Transistors . . . designed for general purpose amplifier and high–speed switching applications. • High DC Current Gain hFE = 1400 Typ @ IC = 2.0 Adc


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    BD776 BD777, BD780 BD777 BD778 TIP73B TIP74 TIP74A bd775 2SC7 BD779 Diode BAY 61 MDS20 BD776-778-780 BUX98A AMPLIFIER 2SD718 2sb688 schematic MJW16010 PDF

    TIP142 TRANSISTOR REPLACEMENT

    Abstract: replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP140 TIP141* TIP142* PNP TIP145 TIP146* TIP147* Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V


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    TIP140, TIP145 TIP141, TIP146 TIP142, TIP147 TIP73B TIP74 TIP74A TIP74B TIP142 TRANSISTOR REPLACEMENT replacement for TIP147 high end amplifier schematics 2n3055 pin configuration NPN transistor tip41c BDW51C schematics TIP142 TIP147 BD262 DARLINGTON 2N6022 BU108 transistor tip142 PDF

    tip142/TIP3055

    Abstract: BDV64 BDV64A BDV64B BDV65 BDV65A BDV65B BDW83A BDW83B BDW83C
    Text: Pow er Transistors TO-218Case* Continued General Purpose Amplifier TYPE NO. *C (A) Pd (W) BV c b o (V) @ lC @ V( je VCE(SA T) @ lc (MHz) (A) (V) (V) (A) h h FE BVCEO (V) *TYP NPN PNP BDV65 BDV64 12 BDV65A BDV64A 12 125 80 BDV65B BDV64B 12 125 BDW83A BDW84A


    OCR Scan
    O-218 BDV65 BDV64 BDV65A BDV64A BDV65B BDV64B BDW83A BDW84A BDW83B tip142/TIP3055 BDW83C PDF

    BDV65, BDV64

    Abstract: TIP-1 tip142 BDV64 TIP3055 DARLINGTON TRANSISTORS
    Text: Power Transistors TO-218Case* Continued General Purpose Amplifier TYPE NO. *C (A) Pd (W) BV c b o (V) h FE BVCEO (V) @ lC (A) @ V(je VCE(SA T) @ lc h (MHz) (V) (V) (A) «Typ NPN PNP BDV65 BDV64 12 BDV65A BDV64A BDV65B MIN MIN MIN MAX MAX 125 60 60 1,000


    OCR Scan
    O-218 bdv65 bdv64 bdv65a bdv64a bdv65b bdv64b bdw83a bdw84a bdw83b BDV65, BDV64 TIP-1 tip142 TIP3055 DARLINGTON TRANSISTORS PDF

    BOW84C

    Abstract: BOW83B
    Text: Power Transistors TO-218 Case* Continued f f General Purpose Amplifier TYPE NO. Pd (W) *C (A) BV c b O 00 h FE b v CEO (V) @«C (A) v CE VCE(SA T)@ »C <T (MHz) (V) (V) (A) «Typ NPN PNP BDV65 BDV64 12 BDV65A BDV64A BDV65B MIN MIN MIN MAX 125 60 60 1,000


    OCR Scan
    O-218 BDV65 BDV65A BDV65B BDW83A BOW83B BDW83C TIP33A TIP33B TIP33C BOW84C PDF

    TIP53

    Abstract: No abstract text available
    Text: Power Transistors TO-218 Case* NPN High Voltage Switching TYPE NO. *C A Pd (W) bvcbo bvceo (V) (V) VCE(S/ T) @ 1C (V) (A) MIN MIN MAX @ IB *off *T (mA) (MS) (MHz) *TYP *TYP MAX MIN 2N6931 10 150 350 300 1.0 10 2,000 3.0 . 2N6932 10 150 450 400 1.0


    OCR Scan
    O-218 2N6931 2N6932 2N6933 2N6934 2N6935 BU426 BU426A BU508 BU508A TIP53 PDF

    TIP36C to-247

    Abstract: tip51 BDW83C
    Text: Pow er T ran sisto rs Q TO-218 Case* NPN High Voltage Switching TYPE NO. •c A Pd (W) B V cB O BV c e o (V) (V) VCE(SA T ) @ I C (V) MIN MIN MAX @Ib (mA) (A) toff (US) (MHz) +TYP +TYP MAX MIN 2N6931* 10 150 350 300 1.0 10 2,000 3.0 . 2N6932* 10 150


    OCR Scan
    O-218 2N6931* 2N6932* 2N6933" 2N6934* 2N6935* BU426* BU426A* BU508* BU508A* TIP36C to-247 tip51 BDW83C PDF

    MJE520

    Abstract: bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u
    Text: MOTORCLA SC XSTRS/R F 12E D | t3t?5SM aüâ4m ? T | T -9 1 -0 1 Selection By Package Motorola power transistors are available in a wide variety of metal and plastic packages to match thermal, electrical and cost requirements. The following table com pares the basic


    OCR Scan
    -204AA -204AE T0-204A 97A-02 O-205AD BUS51 BUV21 BUV11 2N6249 BUX41 MJE520 bd189 sc 6038 MJE12007 MOTOROLA 527 33A mj4647 mje13006 BD 433NPNTO-126 Je105 mps-u PDF