TIP3055 APPLICATION BD238 Search Results

TIP3055 APPLICATION BD238 Result Highlights (6)

Part	Manufacturer	Description
OMAP5910JZVL2	Texas Instruments	Applications processor
OMAP5910JGVL2	Texas Instruments	Applications processor
XOMAPL138BZWT4	Texas Instruments	Low-Power Applications Processor 361-NFBGA 0 to 90
XOMAPL138BZCE4	Texas Instruments	Low-Power Applications Processor 361-NFBGA 0 to 90
XOMAPL137AZKBT3	Texas Instruments	Low-Power Applications Processor 256-BGA
OMAP3530ECBBAR	Texas Instruments	Applications Processor 515-POP-FCBGA

TIP3055 APPLICATION BD238 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BUV48I Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046 Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable	Original	PDF	2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
BZX85C12V Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E Text: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes	Original	PDF	DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
equivalent transistor TIP3055 Abstract: BD4185 BDW59 BD139.10 equivalent transistor TIP2955 TIP2955 application note BD139.6 BD139.16 2n3055 replacement 2SC1237 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN TIP3055 PNP TIP2955 Complementary Silicon Power Transistors . . . designed for general–purpose switching and amplifier applications. • DC Current Gain — hFE = 20 – 70 @ IC = 4.0 Adc • Collector–Emitter Saturation Voltage — VCE sat = 1.1 Vdc (Max) @ IC = 4.0 Adc	Original	PDF	TIP3055 TIP2955 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C equivalent transistor TIP3055 BD4185 BDW59 BD139.10 equivalent transistor TIP2955 TIP2955 application note BD139.6 BD139.16 2n3055 replacement 2SC1237
2N3773 NPN Audio Power AMP Transistor Abstract: 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006 Text: BIPOLAR POWER TRANSISTORS SELECTOR GUIDE SELECTION BY PACKAGE IC Range Amps VCE Range (Volts) PD (Watts) SO−8 3.0 30 2.0 (Note 2) SOT−223 0.5−3.0 30 2.0 (Note 1) DPAK 0.5-10 40-450 12.5-25 D2PAK 5.0−15 80−450 50−75 DPAK 0.5-10 40-450 12.5-25	Original	PDF	OT-223 O-225AA O-126) O-220AB O-220 O-218 O-247 O-264 O-204AA O-204AE 2N3773 NPN Audio Power AMP Transistor 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006
BUX98PI Abstract: TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 TIP3055 TO-220 ST1803DHI equivalent BU508aFI equivalent BU808DFI Text: April Ô99 DEVICE TYPE NPN PNP 2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 2N5192 2N5195 2N5339 2N5415 2N5416 2N5657 2N5680 2N5681 2N5682 2N5884 2N5886 2N6036 2N6039 2N6050 2N6059 2N6107 2N6111 2N6284 2N6287 2N6388 2N6487 2N6488 2N6490	Original	PDF	2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 BUX98PI TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 TIP3055 TO-220 ST1803DHI equivalent BU508aFI equivalent BU808DFI
BU808DFH Abstract: ST2310DHI BU808DFh equivalent BU808DFI equivalent BU808DFh bu808dfi BUX98APW BUV27 BD911/BD912 electronic ballast MJE13007 ST1803DFH Text: Power Bipolar Transistors Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions P/N NPN PNP STX112 STBV68 STBV45 STBV42 STBV32 STX13003 100 400 400 400 400 400 P/N NPN PNP BSS44 BFX34 2N5153 2N5681 2N5682 2N5415 BUY49S 2N3440 2N5416	Original	PDF	STX112 STBV68 STBV45 STBV42 STBV32 STX13003 BSS44 BFX34 2N5153 2N5681 BU808DFH ST2310DHI BU808DFh equivalent BU808DFI equivalent BU808DFh bu808dfi BUX98APW BUV27 BD911/BD912 electronic ballast MJE13007 ST1803DFH
ST1803DFP Abstract: BUX98PI BU808DFI equivalent BUV48FI electronic balast ST1803DHI equivalent st2001hi SOT93 package BUX48A ST2310HI equivalent Text: Selection guide April 2000 SOT-32 / TO-126 Device Type NPN PNP BD433 BD435 MJE521 BD135 BD437 BD235 BD439 2N5191 BD677 BD677A 2N4923 BD139 BD139-10 BD179 BD441 2N5192 2N6039 BD679 BD679A MJE802 BD237 MJE182 BD681 MJE3440 MJE340 2N5657 ST13003 BULT118 BULT118D	Original	PDF	OT-32 O-126 BD433 BD435 MJE521 BD135 BD437 BD235 BD439 2N5191 ST1803DFP BUX98PI BU808DFI equivalent BUV48FI electronic balast ST1803DHI equivalent st2001hi SOT93 package BUX48A ST2310HI equivalent
fw26025 Abstract: FW26025A fw26025a1 equivalent fw26025a1 st5027 st1802fx st2310fx MD1803DFX BUL312FP BU808DFH Text: Power bipolar transistors TO-264 Device type NPN VCEO [V] PNP HD1530JL* HD1750JL* 700 800 VCBO VCES VCEV [V] IC [A] 1500 1700 26 24 hFE @ IC VCE Ptot [W] 200 200 VCE sat @ IC IB Application Min Max [A] [V] [V] [A] [mA] 5.5 5.5 9 9.5 13 12 5 5 2 3 13 12 3250	Original	PDF	O-264 HD1530JL* HD1750JL* O-220 OT-223 O-220FP OT23-6L O-126 O-220FH ISOWATT218 fw26025 FW26025A fw26025a1 equivalent fw26025a1 st5027 st1802fx st2310fx MD1803DFX BUL312FP BU808DFH
BUL310P Abstract: smps 100w half bridge BUW89 complementary BUR52 to-39 transistors BUTW92 bd707 application BU508DFI BUH315D BUH515 Text: TRANSISTORS POWER BIPOLAR HORIZONTAL DEFLECTION TYPICAL APPLICATION Device BU808DFI BUH315 BUH315D THD218DHI BU508AFI BU508DFI BUH515 BUH515D S2000AFI THD277HI BUH615D THD215HI THD200FI BUH1015HI BUH1015 BUH1215 BUH2M20AP VCEO VCBO IC Ptot V (V) (A) (W)	Original	PDF	BU808DFI BUH315 BUH315D THD218DHI BU508AFI BU508DFI BUH515 BUH515D S2000AFI THD277HI BUL310P smps 100w half bridge BUW89 complementary BUR52 to-39 transistors BUTW92 bd707 application BU508DFI BUH315D BUH515
BUW52I Abstract: BU808d STI-3007 STI3007 BU941ZP BDW91 STI3005 BUT72I BSS44 S2000A Text: TRANSISTORS POWER BIPOLAR HORIZONTAL DEFLECTION VCEO VCBO IC Ptot Resistive Switching Typical application Package Type V BU808DFI* BUH315 BUH315D THD218DHI THD277HI BU508AFI BU508DFI S2000AFI THD219HI BU508A BU508D BU208A BU208D BUH615D THD215HI BUH1015HI	Original	PDF	BU808DFI* BUH315 BUH315D THD218DHI THD277HI BU508AFI BU508DFI S2000AFI THD219HI BU508A BUW52I BU808d STI-3007 STI3007 BU941ZP BDW91 STI3005 BUT72I BSS44 S2000A
power transistors cross reference Abstract: motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE Text: Bipolar Power Transistors In Brief . . . Motorola’s broad line of Bipolar Power Transistors includes discrete and Darlington transistors in a variety of packages from the popular surface mount DPAK at 1.75 watts to the 250 watt TO-3 and TO–264. New products	Original	PDF	MJW16212 225AA) MJE13003 BUH51 power transistors cross reference motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE
BU108 Abstract: 0621 TL MJE2955T 2SC1943 2SC1419 MJE2801 BU326 BU100 BUS50 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJF3055 PNP MJF2955 Complementary Silicon Power Transistors . . . specifically designed for general purpose amplifier and switching applications. • • • • • • • Isolated Overmold Package 1500 Volts RMS Min	Original	PDF	MJE3055T MJE2955T E69369, MJF3055 MJF2955 TIP73B TIP74 TIP74A TIP74B TIP75 BU108 0621 TL MJE2955T 2SC1943 2SC1419 MJE2801 BU326 BU100 BUS50
2N3055 plastic Abstract: BUT11Af equivalent BU108 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 bdx54d BDX54 BUX98A 2SC140 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Full Pak High Voltage NPN Power Transistor For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications. This device combines the latest state of the art	Original	PDF	BUT11AF BUT11AF TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 plastic BUT11Af equivalent BU108 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 bdx54d BDX54 BUX98A 2SC140 BU326 BU100
BU108 Abstract: BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. • •	Original	PDF	TIP47, TIP50 MJD47* MJD50* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 BU326 BU100

MJL21194 equivalent Abstract: MJL21193 equivalent bux48a equivalent 2N6107 equivalent BU108 MJ4502 pair BD140 npn transistor MJL21194 2N5981 pnp transistor 2N3055 typical applications Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJL21193* NPN MJL21194* Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.	Original	PDF	MJL21193 MJL21194 MJL21193* MJL21194* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A MJL21194 equivalent MJL21193 equivalent bux48a equivalent 2N6107 equivalent BU108 MJ4502 pair BD140 npn transistor MJL21194 2N5981 pnp transistor 2N3055 typical applications
BU108 Abstract: 2SC7 RCA1C03 to-126 HIGH SPEED SWITCHING transistor BDX54 2SC1943 2SC1419 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD437 BD441 Plastic Medium Power Silicon NPN Transistor . . . for amplifier and switching applications. Complementary types are BD438 and BD442. 4.0 AMPERES POWER TRANSISTORS NPN SILICON CASE 77–08 TO–225AA TYPE ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ	Original	PDF	BD438 BD442. BD437 BD441 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 2SC7 RCA1C03 to-126 HIGH SPEED SWITCHING transistor BDX54 2SC1943 2SC1419 BU326 BU100
ST T4 3580 Abstract: BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJD243* Plastic Power Transistor DPAK For Surface Mount Applications *Motorola Preferred Device . . . designed for low voltage, low–power, high–gain audio amplifier applications. • Collector–Emitter Sustaining Voltage — VCEO sus = 100 Vdc (Min) @ IC = 10 mAdc	Original	PDF	MJD243* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 ST T4 3580 BU108 bdw93c applications transistor bd136 in dpak packaging 2SC103 ir411 TRANSISTOR BC 384 BDX54 2SB56 IC 714
bu806 REPLACEMENT Abstract: k 3569 BU108 2SD211 BU806 NSP2100 TL MJE2955T 2SC1943 2SC1419 BU326 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU806 NPN Darlington Power Transistor 8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS This Darlington transistor is a high voltage, high speed device for use in horizontal deflection circuits in TV’s and CRT’s.	Original	PDF	220AB BU806 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C bu806 REPLACEMENT k 3569 BU108 2SD211 BU806 NSP2100 TL MJE2955T 2SC1943 2SC1419 BU326
MJE15020 Abstract: DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE340 Plastic Medium Power NPN Silicon Transistor 0.5 AMPERE POWER TRANSISTOR NPN SILICON 300 VOLTS 20 WATTS . . . useful for high–voltage general purpose applications. • Suitable for Transformerless, Line–Operated Equipment	Original	PDF	MJE340 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 MJE15020 DTS423 mje15033 replacement 2SC243 BD388-5 2SC1826 BD263 2SC1903 SE9302 2SA698
pin configuration NPN transistor BD679 Abstract: 2SC101 pin configuration NPN transistor BD 677 BU108 TIP120 equivalent 2SC7 2N6052 equivalent 2SC558 BDX54 2SC1943 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD675 BD675A BD677 BD677A BD679 BD679A BD681* Plastic Medium-Power Silicon NPN Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 Min @ IC = 1.5 and 2.0 Adc	Original	PDF	BD675, BD676, BD675 BD675A BD677 BD677A BD679 BD679A BD681* TIP73B pin configuration NPN transistor BD679 2SC101 pin configuration NPN transistor BD 677 BU108 TIP120 equivalent 2SC7 2N6052 equivalent 2SC558 BDX54 2SC1943
2N5686 motorola Abstract: 2N5685 equivalent BU108 MJ15024 MJ15025 AUDIO AMPLIFIER 2N5686 2SA49 2SC140 2N5685 MJ1000 NSP2100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP 2N5684 High-Current Complementary Silicon Power Transistors NPN 2N5685 2N5686* . . . designed for use in high–power amplifier and switching circuit applications. • High Current Capability — IC Continuous = 50 Amperes.	Original	PDF	2N5684 2N5685 2N5686* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5686 motorola 2N5685 equivalent BU108 MJ15024 MJ15025 AUDIO AMPLIFIER 2N5686 2SA49 2SC140 MJ1000 NSP2100
BU108 Abstract: 2SA1046 driver amplifier tip31 TRANSISTOR BDX54 MJE5190 2SB56 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5191 2N5192* Silicon NPN Power Transistors . . . for use in power amplifier and switching circuits, — excellent safe area limits. Complement to PNP 2N5194, 2N5195. *Motorola Preferred Device 4 AMPERE POWER TRANSISTORS	Original	PDF	2N5194, 2N5195. 2N5191 2N5192* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 2SA1046 driver amplifier tip31 TRANSISTOR BDX54 MJE5190 2SB56 BU326 BU100
BDV65B equivalent Abstract: buv48 equivalent BU108 tip127 pin details 2SD424 BDX54 BU326 BU100 mje340 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN BDV65B PNP BDV64B Complementary Silicon Plastic Power Darlingtons . . . for use as output devices in complementary general purpose amplifier applications. • High DC Current Gain HFE = 1000 min. @ 5 Adc • Monolithic Construction with Built–in Base Emitter Shunt Resistors	Original	PDF	BDV65B BDV64B TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C BDV65B equivalent buv48 equivalent BU108 tip127 pin details 2SD424 BDX54 BU326 BU100 mje340
BUX98PI Abstract: BUS08D T1P35C bux98p TP41A BUS08DFI BUF420AI Bo677A B0X54C BO677 Text: SELECTION GUIDE BY PACKAGE OPAK IPAK % DEVICE TYPE VcBO V ceO NPN PNP V MJD200T4 MJD3055T4 MJD31BT4 MJD44H11T4 STD909T4 IIJ m t2 T 4 MJD31CT4 «J012W 4 MJD47T4 MJ0340T4 MJD50T4 MJD210T4 MJD2955T4 MJD32BT4 MJ045H11T4 STD910T4 MJD32CT4 MJD127T4 MJD350T4 BULD118-1	OCR Scan	PDF	MJD200T4 MJD3055T4 MJD31BT4 MJD44H11T4 STD909T4 MJD31CT4 J012W MJD47T4 MJ0340T4 MJD50T4 BUX98PI BUS08D T1P35C bux98p TP41A BUS08DFI BUF420AI Bo677A B0X54C BO677

TIP3055 APPLICATION BD238 Search Results

TIP3055 APPLICATION BD238 Result Highlights (6)

TIP3055 APPLICATION BD238 Datasheets Context Search

BUV48I

BZX85C12V

equivalent transistor TIP3055

2N3773 NPN Audio Power AMP Transistor

BUX98PI

BU808DFH

ST1803DFP

fw26025

BUL310P

BUW52I

power transistors cross reference

BU108

2N3055 plastic

BU108

MJL21194 equivalent

BU108

ST T4 3580

bu806 REPLACEMENT

MJE15020

pin configuration NPN transistor BD679

2N5686 motorola

BU108

BDV65B equivalent

BUX98PI