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    TIP 142 TRANSISTOR Search Results

    TIP 142 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TIP 142 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TDA7250

    Abstract: TDA7250 application note tip 142 or 147 equivalent tda7250 TRANSISTOR BDX DIP20 bdw 36
    Text: TDA7250 60 W HI-FI DUAL AUDIO DRIVER . . . . . WIDE SUPPLY VOLTAGE RANGE : 20 TO 90 V ± 10 to ± 45 V VERY LOW DISTORTION AUTOMATIC QUIESCENT CURRENT CONTROL FOR THE POWER TRANSISTORS WITHOUT TEMPERATURE SENSE ELEMENTS OVERLOAD CURRENT PROTECTION FOR


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    PDF TDA7250 DIP20 TDA7250 TDA7250 application note tip 142 or 147 equivalent tda7250 TRANSISTOR BDX DIP20 bdw 36

    TDA7250

    Abstract: TRANSISTOR BDX 53 tip 142 TDA7250 application note equivalent tda7250 tip 147 TRANSISTOR equivalent BDW 38 transistor tip147 TRANSISTOR BDX DIP20
    Text: TDA7250 60 W HI-FI DUAL AUDIO DRIVER . . . . . WIDE SUPPLY VOLTAGE RANGE : 20 TO 90 V ± 10 to ± 45 V VERY LOW DISTORTION AUTOMATIC QUIESCENT CURRENT CONTROL FOR THE POWER TRANSISTORS WITHOUT TEMPERATURE SENSE ELEMENTS OVERLOAD CURRENT PROTECTION FOR


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    PDF TDA7250 DIP20 TDA7250 TRANSISTOR BDX 53 tip 142 TDA7250 application note equivalent tda7250 tip 147 TRANSISTOR equivalent BDW 38 transistor tip147 TRANSISTOR BDX DIP20

    TDA7250

    Abstract: TDA7250 application note DIP20 tip147 inp transistor TRANSISTOR BDX 53
    Text: TDA7250 60 W HI-FI DUAL AUDIO DRIVER . . . . . WIDE SUPPLY VOLTAGE RANGE : 20 TO 90 V ± 10 to ± 45 V VERY LOW DISTORTION AUTOMATIC QUIESCENT CURRENT CONTROL FOR THE POWER TRANSISTORS WITHOUT TEMPERATURE SENSE ELEMENTS OVERLOAD CURRENT PROTECTION FOR


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    PDF TDA7250 DIP20 TDA7250 TDA7250 application note DIP20 tip147 inp transistor TRANSISTOR BDX 53

    TDA7250

    Abstract: TDA7250 application note TRANSISTOR BDX TRANSISTOR BDX 53 equivalent tda7250 tip147 data sheet DIP20 tip142
    Text: TDA7250 60 W HI-FI DUAL AUDIO DRIVER . . . . . WIDE SUPPLY VOLTAGE RANGE : 20 TO 90 V ± 10 to ± 45 V VERY LOW DISTORTION AUTOMATIC QUIESCENT CURRENT CONTROL FOR THE POWER TRANSISTORS WITHOUT TEMPERATURE SENSE ELEMENTS OVERLOAD CURRENT PROTECTION FOR


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    PDF TDA7250 TDA7250 DIP20 TDA7250 application note TRANSISTOR BDX TRANSISTOR BDX 53 equivalent tda7250 tip147 data sheet DIP20 tip142

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 40/141/142 HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A TO -3P MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE y . ' . W C om plem ent to TIP 145/146/147 ABSOLUTE MAXIMUM RATINGS


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    PDF TIP142F TIP141F TIP140F

    Untitled

    Abstract: No abstract text available
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 45/146/147 HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = -4V, IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO -3P \A \ wh C om plem ent to TIP 140/141/142 ABSOLUTE MAXIMUM RATINGS


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    PDF TIP147 TIP146 TIP145 TIP145/146/147

    142 TRANSISTOR

    Abstract: TIP140 TIP140F TIP141 TIP141F TIP142 TIP142F
    Text: NPN EPITAXIAL TIP140/141 /142 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE = 1000 @ V ce = 4V, IC = 5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO -3P • C om plem ent to TIP 145/146/147 ABSOLUTE MAXIMUM RATINGS


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    PDF TIP140/141 TIP145/146/147 TIP140 TIP141 TIP142 142 TRANSISTOR TIP140 TIP140F TIP141 TIP141F TIP142 TIP142F

    Untitled

    Abstract: No abstract text available
    Text: Zjï SGS-THOMSON ¡[LieraMe TIP140/141/142 TIPI 45/146/147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . TIP141, TIP142, TIP145 AND TIP147 ARE SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION


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    PDF TIP140/141/142 TIP141, TIP142, TIP145 TIP147 TIP140, TIP141 TIP142 O-218 TIP145,

    tip 142

    Abstract: TIP142 TIP 147 TIP142 TIP147 P140 P145 TIP140 TIP141 TIP145 TIP146
    Text: S A N Y O SEMICONDUCTOR NPN TIP140 TIP141 TIP142 DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS PNP TIP145 TIP146 TIP147 60-80-100 VOLTS, 10 AMPERE HIGH CURRENT GAIN hFE = 4000 typ. @3V, 5A LOW SATURATION VOLTAGE V c e SAT = 1.0V typ. @ 5A MONOLITHIC CONSTRUCTION WITH BUILT-IN


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    PDF TIP140 TIP145 TIP141 TIP146 TIP142 TIP147 tip140, tip145 tip141, tip146 tip 142 TIP 147 TIP142 TIP147 P140 P145

    bdx340

    Abstract: Bow94c b0334 Bow93c b0333 BUZ10 d 6283 ic 2N6286 BUZ11 BUZ11S2
    Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO p»ot (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60


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    PDF 2N6284 bdx340 Bow94c b0334 Bow93c b0333 BUZ10 d 6283 ic 2N6286 BUZ11 BUZ11S2

    tip 147 TRANSISTOR

    Abstract: tip 145 transistor transistor tip 142 TIP14 tip 146 TIP-14 tip147c tip 141 transistor transistor tip 146
    Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP145/146/147 HIGH DC CURRENT GAIN MIN hFE= 1000 @ V ce = — 4V, lc = - 5 A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE TO-3P Com plement to TIP140/141/142 ABSOLUTE MAXIMUM RATINGS


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    PDF TIP145/146/147 TIP140/141/142 TIP14 TIP147 I45/146/147 tip 147 TRANSISTOR tip 145 transistor transistor tip 142 tip 146 TIP-14 tip147c tip 141 transistor transistor tip 146

    tip 147 transistor

    Abstract: transistor tip 142 npn tip tip 141 transistor tip 35 c transistor
    Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIPI 40/141/142 HIGH DC CURRENT GAIN MIN h FE = 1000 @ V ce * -4V , IC = -5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE Com plem ent to TIP145/146/147 ABSOLUTE MAXIMUM RATINGS


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    PDF TIP145/146/147 --20mA, TIP140/141A142 tip 147 transistor transistor tip 142 npn tip tip 141 transistor tip 35 c transistor

    Bow94c

    Abstract: Bow93c box 53c IC SGS transistors b0334 SGS6388 BO 336 b0333 BOW93B SGSP222
    Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80


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    PDF BUZ11 SGSP492 MTP3055A IRFP153 IRFP151 BUZ11S2 Bow94c Bow93c box 53c IC SGS transistors b0334 SGS6388 BO 336 b0333 BOW93B SGSP222

    BD633

    Abstract: BD637 darlington complementary power amplifier tip 142 BD635 tip 42 tip 3055 B0633 TIP 5530 TIP NPN tip 120
    Text: PRELIM IN ARY BD633, BD635, BD637 NPN EPIBASE POWER TRANSISTORS Amplifier Switch Complementary O utput Stages Complementary with BD 633, BD 635, BD 637 mechanical data TO-66P All dimensions are in mm absolute maximum ratings Collector-Emitter Voltage.


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    PDF BD633, BD635, BD637 BD633 BD635 BD637 darlington complementary power amplifier tip 142 tip 42 tip 3055 B0633 TIP 5530 TIP NPN tip 120

    B0638

    Abstract: BD638 TIP 122 100 V BD636 B0738 BD637 tip 42 darlington complementary power amplifier tip 142 BD634 73 5302
    Text: BD634, BD636, BD638 PNP EPIBASE POWER TRANSISTORS IPRELIMINARY 873 Amplifier Switch Complementary Output Stages Complementary with BD633, BD635, BD637 mechanical data •— 6 , 0 - o ss l-i ! i J — 1.3 r r - - 16,5 , TT , I * ri | i * t ^ 0.05 thick Base' j i g


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    PDF BD634, BD636, BD638 BD633, BD635, BD637 BD634 BD636 B0638 BD638 TIP 122 100 V B0738 BD637 tip 42 darlington complementary power amplifier tip 142 73 5302

    B0738

    Abstract: b0734 TIP5530 B0736 TIP 5530 BD 147 TIP 3055 tip 125 tip 42 b073
    Text: PRELIMINARY BD734, BD736, BD738 PNP EPIBASE POWER TRANSISTORS H IG H G A IN G E R M A N IU M R E PLA C E M E N T • Car and Portable Radio • Complementary O utput Stages • Complementary w ith B D 733, B D 735, B D737 mechanical data TO-66P All d im e n s io n s a r e in m m


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    PDF BD734, BD736, BD738 BD733, BD735, BD737 B0738 b0734 TIP5530 B0736 TIP 5530 BD 147 TIP 3055 tip 125 tip 42 b073

    Untitled

    Abstract: No abstract text available
    Text: NPN EPITAXIAL TIP140/141/142 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE = 1000 @ VCE = 4V, IC = 5A MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE T O -3 P • C o m p le m e n t to T IP 1 4 5 /1 4 6 /1 4 7


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    PDF TIP140/141/142 TIP142

    Bow94c

    Abstract: MTP3055A IRFZ22 mosfet b0334 BUZ11 SGSP222 BUZ10 STVHD90 SGS137 SGSD93G
    Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80


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    PDF IRFZ20FI BUZ10 STLT29* BUZ11A SGSP382 SGSP482 BUZ11 BUZ11FI IRFZ42 SGSP492 Bow94c MTP3055A IRFZ22 mosfet b0334 SGSP222 STVHD90 SGS137 SGSD93G

    TIP308

    Abstract: woy transistor transistor tip 30c tip 30 tip 30c tip 147 TRANSISTOR motorola tip29 LSE 0405
    Text: MOT OR OL A SC 12E D 1 b3b7254 o a a s s i b s I XSTR S/ R F • 3 3 - Ö ? PNP ' NPN TIP29 T1P29A TIP29B TIP29C MOTOROLA SEMICONDUCTOR TECHNICAL DATA TIP30 TIP30A TIP30B TIP30C 1 A M PERE POWER TRANSISTORS COMPLEMENTARY SILICON COMPLEMENTARY SILICON PLASTIC


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    PDF b3b7254 TIP29 T1P29A TIP29B TIP29C TIP30 TIP30A TIP30B TIP30C TIP308 woy transistor transistor tip 30c tip 30 tip 30c tip 147 TRANSISTOR motorola tip29 LSE 0405

    Bow94c

    Abstract: MJE 131 BD 147 tip 220 sgs mosfet SGSD93G b0333 B0680 bow93b bdw 34 a
    Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80


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    PDF BDX53 Bow94c MJE 131 BD 147 tip 220 sgs mosfet SGSD93G b0333 B0680 bow93b bdw 34 a

    bow94c

    Abstract: BOW93C SGSP591 MTP3055A SGSD93G SGSP381 SGSP461 SMD SJ 87 b0334 BUZ10
    Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80


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    PDF IRF530FI SGSP361 SGSP461 BUZ21 BUZ25 IRF142 IRF542 IRF542FI IRF152 IRFP152 bow94c BOW93C SGSP591 MTP3055A SGSD93G SGSP381 SMD SJ 87 b0334 BUZ10

    TIP42C EQUIVALENT

    Abstract: TIP 122 transistor APPLICATION NOTES TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 5530 TIP 122 transistor APPLICATION circuit tip 147 TRANSISTOR equivalent TIP41A equivalent TIP42A equivalent TRANSISTOR tip 122
    Text: TYPES TIP42, TIP42A, TIP42B, TIP42C P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS F O R P O W E R -A M P L IF IE R A N D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 4 1 , T IP 4 1 A , TIP 4 1 B , T IP 41C


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    PDF TIP42, TIP42A. TIP42B. TIP42C TIP41, TIP41A, TIP41B, TIP41C TIP42 TIP42A TIP42C EQUIVALENT TIP 122 transistor APPLICATION NOTES TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 5530 TIP 122 transistor APPLICATION circuit tip 147 TRANSISTOR equivalent TIP41A equivalent TIP42A equivalent TRANSISTOR tip 122

    IPI-41

    Abstract: TIP147 morocco diode sg 42
    Text: tipi 41 142 TIPI 46/1 47 S GS-THOMSON Kl g«LiM(S iO(gS COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . TIP141, TIP142 AND TIP147 ARE SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . MONOLITHIC DARLINGTON CONFIGURATION • INTEGRATED ANTIPARALLEL


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    PDF TIP141, TIP142 TIP147 TIP141and O-218 TIP146 IPI-41 TIP147 morocco diode sg 42

    Untitled

    Abstract: No abstract text available
    Text: r Z Z SGS-THOMSON [¡Ä^ [iyi©ra [ii©s TDA7250 60 W HI-FI DUAL AUDIO DRIVER • WIDE SUPPLY VOLTAGE RANGE : 20 TO 90 V + 10 to + 45 V ■ VERY LOW DISTORTION ■ AUTOMATIC QUIESCENT CURRENT CONTROL FOR THE POWER TRANSISTORS WITHOUT TEMPERATURE SENSE


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    PDF TDA7250 DIP20 TDA7250 7T2T237 0Db45D5 D0b4512