Untitled
Abstract: No abstract text available
Text: Xcelite Table of Contents Xcelite®, founded in 1921, produces high quality tools for professional use. They are known throughout the electronics industry for a comprehensive line of screwdrivers, nutdrivers, convertible nutdriver/ screwdriver sets, interchangeable blade drivers, service tools and kits, pliers and cutters, shears, snips, wire strippers and
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transistor tip 35c
Abstract: photo transistor terminal transistor TIP 350 TIP 122 transistor APPLICATION circuit transistor TIP 662 transistor TIP 320 PCB PHOTO SENSOR TIP 122 transistor TIP 29 transistor AHF21
Text: AHF2 SMALL, HIGHLY RELIABLE TIP SENSOR CONTAINING A PHOTO SENSOR TIP AHF2 SWITCHES FEATURES TYPICAL APPLICATIONS • Realizes miniaturization of equipment and spaces saving. Size of body: 9.5x9.5×9.3 mm .374×.374×.366 inch • The contact type is equivalent to normally closed contacts, which satisfies the PL
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TIP 40c transistor
Abstract: transistor tip 35c transistor TIP 662 transistor TIP 350 TIP 122 transistor APPLICATION circuit photo transistor terminal transistor equivalent of tip 50 transistor tip 360 tip 145 transistor
Text: AHF2 SMALL, HIGHLY RELIABLE TIP SENSOR CONTAINING A PHOTO SENSOR TIP AHF2 SWITCHES FEATURES TYPICAL APPLICATIONS • Realizes miniaturization of equipment and spaces saving. Size of body: 9.5x9.5×9.3 mm .374×.374×.366 inch • The contact type is equivalent to normally closed contacts, which satisfies the PL
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON TIP 100/TIP 102 RfflDOlñ!<s [l[L[ie,ü’[KÍ@RDD S$ TIP105/TIP106/TIP107 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . COMPLEMENTARY PNP - NPN DEVICES . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
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100/TIP
TIP105/TIP106/TIP107
TIP100
TIP102
T0-220
TIP105
TIP107
TIP106
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TIP105
Abstract: TIP-106 TIP107 TIP106 transistor TIP105 NPN Transistor VCEO 80V 100V DARLINGTON
Text: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 00/101/102
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TIP105/106/107
TIP100/101/102
O-220
TIP105
TIP106
TIP107
TIP-106
TIP107
TIP106
transistor TIP105
NPN Transistor VCEO 80V 100V DARLINGTON
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TIP100
Abstract: TIP101 TIP102 NPN Transistor 8A TIP102 Darlington transistor
Text: NPN EPITAXIAL TIP100/101 /102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCe=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 05/106/107
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TIP100/101
TIP105/106/107
O-220
TIP100
TIP101
TIP102
900MA
TIP101
TIP102
NPN Transistor 8A
TIP102 Darlington transistor
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Untitled
Abstract: No abstract text available
Text: PNP EPITAXIAL TIP105/106/107 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE= -4V, lc= -3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 10 0 /1 01/102
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TIP105/106/107
TIP106
TIP107
TIP105
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Untitled
Abstract: No abstract text available
Text: NPN EPITAXIAL TIP100/101/102 SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE=1000 @ V ce=4V, lc=3A LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE • C om plem entary to TIP 1 05/106/107
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TIP100/101/102
TIP101
TIP102
TIP100
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TIP 102 transistor
Abstract: transistor tip 107 Transistor tip 102
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE= 1000 @ VCE=4V, lc = 3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS
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TIP100/101/102
TIP105/106/107
TIP101
TIP 102 transistor
transistor tip 107
Transistor tip 102
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tip 102
Abstract: No abstract text available
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE=1000 @ VCE=4V, lc =3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS INDUSTRIAL USE
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TIP100/101/102
O-220
TIP105/106/107
TIP101
tip 102
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tip 102
Abstract: Transistor tip 102
Text: NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR TIP100/101/102 HIGH DC CURRENT GAIN MIN hFE= 1000 @ V c e = 4 V , lc =3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS
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TIP100/101/102
TIP105/106/107
TIP101
TIP101
tip 102
Transistor tip 102
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Tip 106
Abstract: TIP106
Text: SGS-THOMSON TIP100/TIP102 illSBTMIKgS TIPI 05/TIP106/TIP107 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES • COMPLEMENTARY PNP - NPN DEVICES . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE APPLICATIONS . LINEAR AND SWITCHING INDUSTRIAL
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TIP100/TIP102
05/TIP106/TIP107
TIP100
TIP102
T0-220
TIP105
TIP107
TIP106
Tip 106
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bdx340
Abstract: Bow94c b0334 Bow93c b0333 BUZ10 d 6283 ic 2N6286 BUZ11 BUZ11S2
Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO p»ot (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60
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2N6284
bdx340
Bow94c
b0334
Bow93c
b0333
BUZ10
d 6283 ic
2N6286
BUZ11
BUZ11S2
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Tip 107 C
Abstract: transistor tip 107 e 616 E616 IP107 tip 105 tip 107
Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR T IP I05/106/107 HIGH DC CURRENT GAIN MIN hFE= 1000 @ VCE= —4V, lc = - 3 A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS
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I05/106/107
TIP100/101/102
TIP107
TIP105/106/107
Tip 107 C
transistor tip 107
e 616
E616
IP107
tip 105
tip 107
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MJE6045
Abstract: SE9302 texas instruments tip102 T0-22Q TIP101 TEXAS INSTRUMENTS TIP105 texas instruments tip100 transistor 1251 n-p-n 2N6388 TIP102
Text: bH TEXAS I N S T R -COPTO} 0D3bö7D □ 896-1726 TEXAS INSTR OPTO 62C 3Ó870 TIP100, TIP101, TIP102 N-P-N DARLINGTON-CONNECTED SILICON POWER TRANSISTORS JA N U A R Y 1 9 7 7 - R E V IS E D O C TO B E R 1 9 8 4 • Designed for Complementary Use with TIP105, TIP106, TIP107
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03kifi7D
TIP100,
TIP101,
TIP102
T-33-29
TIP105,
TIP106,
TIP107
MinhFEof200at4V
2N6045
MJE6045
SE9302
texas instruments tip102
T0-22Q
TIP101
TEXAS INSTRUMENTS TIP105
texas instruments tip100
transistor 1251 n-p-n
2N6388
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T1P42C
Abstract: Power transistor TO-220 NPN 100 V, TIP 41C TIP 41c transistor T1P42A T1P42 TIP 42c transistor T1P-42C T1P49 t1p41 tlp42c
Text: SAMSUNG S E M I C O N O U G TOR INC 14E TIP42 SERIES D | 11142 0 0 0 7 7 2 2 - 7 | TIP42/42A/42B/42C PNP EXITAXIAL SILICON TRANSISTOR T - MEDIUM POWER LINEAR N SWITCHING APPLICATIONS 73- zj • Com plem ent to T1P41/41AV41B/41C ABSOLUTE MAXIMUM RATINGS (Ta=25°C)
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TIP42
TIP42/42A/42B/42C)
T1P41/41AV41B/41C
T1P42
TIP42A
T1P42B
TIP42C
T1P42A
TIP42B
T1P42C
Power transistor TO-220 NPN 100 V, TIP 41C
TIP 41c transistor
T1P42A
TIP 42c transistor
T1P-42C
T1P49
t1p41
tlp42c
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Bow94c
Abstract: MTP3055A IRFZ22 mosfet b0334 BUZ11 SGSP222 BUZ10 STVHD90 SGS137 SGSD93G
Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80
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IRFZ20FI
BUZ10
STLT29*
BUZ11A
SGSP382
SGSP482
BUZ11
BUZ11FI
IRFZ42
SGSP492
Bow94c
MTP3055A
IRFZ22 mosfet
b0334
SGSP222
STVHD90
SGS137
SGSD93G
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Bow94c
Abstract: MJE 131 BD 147 tip 220 sgs mosfet SGSD93G b0333 B0680 bow93b bdw 34 a
Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80
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BDX53
Bow94c
MJE 131
BD 147
tip 220
sgs mosfet
SGSD93G
b0333
B0680
bow93b
bdw 34 a
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bow94c
Abstract: BOW93C SGSP591 MTP3055A SGSD93G SGSP381 SGSP461 SMD SJ 87 b0334 BUZ10
Text: F=7 SGS-THOMSON AUTOMOTIVE MD g[^ [llL[l©î[S(5 R00(Si POWER TRANSISTORS HIGH GAIN BIPOLAR DARLINGTONS VcBO v CEO (A) (V) (V) (W) 2 2 2 5 5 5 6 6 6 8 8 8 8 8 8 8 8 8 8 10 10 10 10 10 10 12 12 12 12 12 20 25 30 30 60 80 100 60 80 100 60 80 100 40 60 80 80
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IRF530FI
SGSP361
SGSP461
BUZ21
BUZ25
IRF142
IRF542
IRF542FI
IRF152
IRFP152
bow94c
BOW93C
SGSP591
MTP3055A
SGSD93G
SGSP381
SMD SJ 87
b0334
BUZ10
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Untitled
Abstract: No abstract text available
Text: TRANSISTORS FUNCTION GUIDE 2.2.3 TO-220 Type Transistors lc Device Type Condition A VcEO (V) 2 60 TIP110 TIP115 4 2 80 TIP111 TIP116 4 100 TIP112 TIP117 4 NPN PNP VcE (V) lc (A) Condition v CE(sat)(V) Condition Hfe fT(MHz) Pc (W) lc (A) Ib (A) V ce TYP MAX (V)
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O-220
TIP110
TIP111
TIP112
KSD5018
TIP120
TIP121
TIP122
KSD560
BDW23
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TIP 107
Abstract: transistor tip 107 transistor t0-220 TO 106 transistor base collector emitter
Text: PNP EPITAXIAL SILICON DARLINGTON TRANSISTOR T IP I05/106/107 HIGH DC CURRENT GAIN MIN hFE=1000 @ V e e r -4V, lc= -3A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER SATURATION VOLTAGE MONOLITHIC CONSTRUCTION WITH BUILT IN BASE-EMITTER SHUNT RESISTORS
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I05/106/107
T0-220
TIP100/101/102
TIP105
TIP106
TIP106
TIP107
-80mA
TIP105/106/107
TIP 107
transistor tip 107
transistor t0-220
TO 106 transistor base collector emitter
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p100 220a
Abstract: transistor p105 TP106 TP-107
Text: MOTOROLA Order this document by TIP100/D SEMICONDUCTOR TECHNICAL DATA Plastic M edium -Pow er Com plem entary Silicon Transistors NPN T P100 . . . designed for general-purpose amplifier and low -speed switching applications. • • • • • T P101* High DC Current Gain —
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TIP100/D
TIP100,
TIP105
TIP101,
TIP106
TIP102,
TIP107
-220A
21A-06
O-220AB
p100 220a
transistor p105
TP106
TP-107
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T1P110
Abstract: transistor tip 107 T1P111 T1P105 darlington npn tip 102 np112 VCS-60V T1P115 L08M darlington tip 102
Text: ¡ S A M S UN G S E M I C ON D U CT OR INC 14E D 1 7^1,4142 000772a fl PNP EPriAXIAT. SILICON DARLINGTON TRANSISTOR TIP105/106/107 r HIGH DC CURRENT GAIN ‘ MIN hFE=1000 @ V c e = —4 V, lc = -3 A COLLECTOR-EMITTER SUSTAINING VOLTAGE LOW COLLECTOR-EMITTER
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TIP105/106/107
000772a
TIP100/101/102
TIP105
TIP106
TIP107
T1P105
TIP115:
T1P110
transistor tip 107
T1P111
T1P105
darlington npn tip 102
np112
VCS-60V
T1P115
L08M
darlington tip 102
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TIPI02
Abstract: tip1 33T4 DDD1172 TIP100 TIP105
Text: HL TIPI 00, TIPI 01, T IP I02 TIPI 05, T IP I06, T IP I07 TIP100,101,102 TIP105, 106, 107 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Darlingtons for Linear and Switching Applications 0IM A B C D E F H J K L M N MIN MAX 16.51 10,67 4.83
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TIPI02
TIPI06,
TIPI07
TIP100,
TIP105,
DDD1172
tip1
33T4
TIP100
TIP105
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