SMAJ60A
Abstract: marking code VE DO-214AC SMAJ10A SMAJ10CA SMAJ11A SMAJ11CA SMAJ12A SMAJ12CA SMAJ170CA P 181 YE
Text: SMAJ5.0 THRU SMAJ170CA SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR Stand - Off Voltage - 5.0 to 170 Volts Peak Pulse Power - 400 Watt FEATURES ● ● ● ● ● Glass Passivated Die Construction Uni- and Bi-Directional Versions Available Excellent Clamping Capability
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SMAJ170CA
DO-214AC)
MIL-STD-750,
SMAJ60A
marking code VE DO-214AC
SMAJ10A
SMAJ10CA
SMAJ11A
SMAJ11CA
SMAJ12A
SMAJ12CA
SMAJ170CA
P 181 YE
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CCS-37S10
Abstract: CCS-37S1C
Text: DC-18 GHz Miniature Transfer Switches Failsafe The CCS-37 Failsafe Switch is a long-life high performance transfer switch designed for use in 50 Ohms coaxial transmission lines operating over frequencies ranging from DC to 18 GHz. The switch is designed for minimum size compatible with SMA connector spacing.
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DC-18
CCS-37
CCS-37S1C
CCS-37S10
CCS-37S10
CCS-37S1C
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CS-37S10
Abstract: CS-37S1C CS-37
Text: DC-18 GHz Miniature Transfer Switches Failsafe The CS-37 Failsafe Switch is a long-life high performance transfer switch designed for use in 50 Ohm coaxial transmission lines operating over frequencies ranging from DC to 18 GHz. The switch is designed for minimum size compatible with SMA connector spacing.
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DC-18
CS-37
CS-37S10
CS-37S1C
MIL-C-26482.
CS-37S10
CS-37S1C
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CCS-37S60
Abstract: CCS-37S6D CCS-37S6E ccs 100
Text: DC-18 GHz Miniature Transfer Switches Latching The CCS-37 Latching Switch is a long-life high performance transfer switch designed for use in 50 Ohms coaxial transmission lines operating over frequencies ranging from DC to 18 GHz. The switch is designed for minimum size compatible with SMA connector spacing.
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DC-18
CCS-37
CCS-37S60
CCS-37S6C
CCS-37S6D
CCS-37S6E
CCS-37S60
CCS-37S6C,
CCS-37S6D
CCS-37S6E,
CCS-37S6E
ccs 100
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CS-37 Latching Switch
Abstract: CS-37S6E CS-37S6C cs37s6e CS-37S
Text: DC-18 GHz Miniature Transfer Switches Latching The CS-37 Latching Switch is a long-life high performance transfer switch designed for use in 50 Ohm coaxial transmission lines operating over frequencies ranging from DC to 18 GHz. The switch is designed for minimum size compatible with SMA connector spacing.
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DC-18
CS-37
CS-37S60
CS-37S1C
CS-37S6D
CS-37S6E
CS-37S60
CS-37S6C,
CS-37 Latching Switch
CS-37S6E
CS-37S6C
cs37s6e
CS-37S
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Untitled
Abstract: No abstract text available
Text: 1SHIELDED INDUCTORS S3011 & $3021 SERIES These Shielded RF Inductors are extremely reliable and are ideal for high density applications. They provide a convenient package without sacrificing electrical performance. 'FEATURES ~~| Excep tiona l Q characteristics.
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S3011
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Untitled
Abstract: No abstract text available
Text: LowNoise, Precision FETOpAmp _AD645 ANALOG DEVICES □ 1.1 Scope. This specification covers the detail requirements for a low noise, precision monolithic FE T amplifier. 1.2 Part Number. The complete part number per Table 1 of this specification is as follows:
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AD645
AD645S
/883B
ADI-M-1000:
H-08A
MIL-STD-883
20kfi
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AD506J
Abstract: AD506 op amp AD506 AD506K AD503J AD503K AD503 AD506L AD506S 80nVHz
Text: ANALOG ► DEVICES High Accuracy Low Offset 1C FET-lnput Op Amps FEATURES Low l|,: 15pA max AD503J, AD506J 5pA max (AD506L) Low VQS: 1mV max (AD506L) Low Drift: 25/jV/°C max (AD503K, AD506K) 10/uV/°C max (AD506IL) PRODUCT DESCRIPTION T he A D 503J/A D 506J, A D 503K /A D 506K , A D 5 0 6 L a n d
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AD503J,
AD506J)
AD506L)
25/jV/Â
AD503K,
AD506K)
10/uV/Â
AD506IL)
AD503J/AD506J,
AD506J
AD506 op amp
AD506
AD506K
AD503J
AD503K
AD503
AD506L
AD506S
80nVHz
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Untitled
Abstract: No abstract text available
Text: Preliminary KM23V32000B E TY/KM23S32000B(E)TY CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM GENERAL DESCRIPTION FEATURES S w itch ab le organ izatio n 4 ,1 9 4 ,3 0 4 x 8(b yte m ode) 2,0 97,152 x 16(w ord m ode) Fast access tim e Random A ccess T im e
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KM23V32000B
TY/KM23S32000B
32M-Bit
/2Mx16)
100ns
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TIONA 121
Abstract: No abstract text available
Text: Preliminary KM23V32000B E TY/KM23S32000B(E)TY CMOS MASK ROM 32M-Bit (4Mx8 /2Mx16) CMOS MASK ROM GENERAL DESCRIPTION FEATURES S w itch ab le organ izatio n 4 ,1 9 4 ,3 0 4 x 8(b yte m ode) 2,0 97,152 x 16(w ord m ode) Fast access tim e Random A ccess Tim e
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KM23V32000B
TY/KM23S32000B
32M-Bit
/2Mx16)
100ns
120ns
TIONA 121
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Untitled
Abstract: No abstract text available
Text: mosaic 128K x 32 SRAM MODULE semiconductor, inc. 11403 W est Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, SYS32128ZK/LK - 010/012/015/017 Fax No: (619) 674 2230 Issue 1.3 : January 1999 Description Features The SYS32128ZK/LK is a plastic 4Mbit Static RAM
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SYS32128ZK/LK
128kx8
128KX32
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Untitled
Abstract: No abstract text available
Text: HA-5134 HARRIS S E M I C O N D U C T O R 4MHz, Precision, Quad Operational Amplifier N o vem b er 1996 Features Description • Low Offset Voltage. 200|.iV Max • Low Offset Voltage D r i f t .2n V /°C (M ax)
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HA-5134
120dB
LT1014,
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TSOP 1378 IR
Abstract: No abstract text available
Text: I S 6 2 L V 1 2 ISSI 4 128K x 8 LOW VOLTAGE AND POWER CMOS STATIC RAM N o v e m b e r 1996 FEATURES DESCRIPTION • High-speed access time: 35, 45, 55, 70 ns T h e /5 5 / IS 62LV 1024 is a low voltage and low power, 131,072word by 8-bit C M O S static RAM. It is fabricated using /5 5 /s
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072word
SR81995LV024
IS62LV1024
TSOP 1378 IR
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varistor sem ad 222 m
Abstract: varistor 222 ste Surgector varistor Z 500 ps
Text: Overvoltage Suppression Facts V oltage T ra n s ie n ts can be d e fin e d as sho rt du ra tio n e xcu rsio n s o r surges of e le ctrica l energy. T ra n s ie n ts re sult fro m th e s ud den re le ase of pre vio u sly s to re d energy. In te rm s of e le ctrica l o r e le c tro n ic circuits, this
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SC70-6
varistor sem ad 222 m
varistor 222 ste
Surgector
varistor Z 500 ps
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TSOP 1378
Abstract: 62C1024
Text: IS62LV1024L IS62LV1024LL ISSI 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM p r e l im in a r y AUGUST 1997 FEATURES DESCRIPTION • A c c e s s tim e s of 35, 45, 50, and 70 ns The IS S IIS62LV1024L and IS62LV1024LL are low power and low Vcc, 131,072-word by 8-bit CMOS static RAMs. They
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IS62LV1024L
IS62LV1024LL
IS62LV1024LL
072-word
450-mil
IS62LV1024LL-35QI
IS62LV1024LL-35TI
IS62LV1024LL-35TSI
TSOP 1378
62C1024
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IS62LV1024
Abstract: No abstract text available
Text: IS62LV1024L IS62LV1024LL m â 128K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM PRELIMINARY SEPTEMBER 1998 FEATURES DESCRIPTION • Access times of 35, 45, 50, and 70 ns The IS62LV1024L and IS62LV1024LL are low power and low Vcc, 131,072-word by 8-bit CMOS static RAMs. They
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IS62LV1024L
IS62LV1024LL
IS62LV1024LL
072-word
IS62LV1024LL-35QI
IS62LV1024LL-35TI
IS62LV1024LL-35HI
IS62LV1024LL-45QI
IS62LV1024LL-45TI
IS62LV1024
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28bv6
Abstract: No abstract text available
Text: Features • 2.7V to 3.6V Supply - Full Read and W rite Operation • Low Power Dissipation - 8 mA Active Current - 50 ^A CMOS Standby Current • Read Access Tim e - 300 ns • Byte W rite - 3 ms • Direct Microprocessor Control - DATA Polling - READY/BUSY Open Drain Output
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AT28BV64
AT28BV64
493A-10/98/xM
28bv6
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Untitled
Abstract: No abstract text available
Text: KMM374F800BK KMM374F81OBK DRAM MODULE KMM374F800BK & KMM374F810BK EDO Mode without buffer 8M X 72 DRAM DIMM with ECC Using 4Mx4, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES T he S am su ng K M M 3 7 4 F 8 0 1 0 B K is a 8 M x7 2b its D ynam ic Part Identification
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KMM374F800BK
KMM374F81OBK
KMM374F800BK
KMM374F810BK
89Max)
374F81
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93c46
Abstract: jedec 46c AT93C46C
Text: Features • Low-Voltage and Standard-Voltage Operation - 5.0 Vcc = 4.5V to 5.5V - 2.7 (V cc = 2.7V to 5.5V) - 2.5 (V cc = 2.5V to 5.5V) • 3-Wire Serial Interface • Schmitt Trigger, Filtered Inputs for Noise Suppression • 2 MHz Clock Rate (5V) Com patibility
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AT93C46C
122A--
07/98/xM
93c46
jedec 46c
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660S
Abstract: No abstract text available
Text: Features ¿lmËL • Fast Read Access Time -150 ns • Fast Byte Write - 200 [is or 1 ms • Self-Timed Byte Write Cycle - Internal Address and Data Latches - Internal Control Timer - Automatic Clear Before Write • Direct Microprocessor Control - DATA POLLING
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AT28C17
AT28C17
0541B
10/98/xM
660S
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16v8
Abstract: No abstract text available
Text: Features Industry-standard Architecture - Emulates Many 20-pin PALs - Low-cost Easy-to-use Software Tools High-speed Electrically-erasable Programmable Logic Devices - 12 ns Maximum Pin-to-pin Delay Low-power - 25 |_iA Standby Power CMOS and TTL Compatible Inputs and Outputs
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20-pin
ATF16V8CZ
0453Fâ
08/99/x
16v8
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A41N
Abstract: TIONA 595 Atmel 0541
Text: Features • Fast Read Access Time -150 ns • Fast Byte Write - 200 ps or 1 ms • Self-Timed Byte Write Cycle - Internal Address and Data Latches - Internal Control Timer - Automatic Clear Before Write • Direct Microprocessor Control - DATA POLLING - READY/BUSY Open Drain Output
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AT28C17
AT28C17
0541B
10/98/xM
A41N
TIONA 595
Atmel 0541
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Untitled
Abstract: No abstract text available
Text: KMM372V21 3CK/CS DRAM M ODULE K M M 3 7 2 V 2 1 3 C K / C S with Fast P a g e M o d e 2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh , 3.3V G E N E R A L DESCRIPTION FEATURES T h e S am sung K M M 37 2V 2 13 C is a 2M x72bits D ynam ic RAM , Part Identification
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KMM372V21
x72bits
16bits
48pin
168-pin
54Max)
2100C
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Untitled
Abstract: No abstract text available
Text: DRAM M ODULE KM M 372 V 41 3 CK/ CS KM M 3 7 2 V 4 1 3 C K / C S with Fast P a g e M o d e 4M x 72 DRAM DIMM with ECC using 2Mx8, Dual Bank, 2K Refresh , 3.3V FE AT U RE S G E N E R A L DE SCRIPTION The S am su ng K M M 37 2V 4 13 C is a 4M x7 2b its D ynam ic RAM
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16bits
48pin
168-pin
150Max
350Max
89Max)
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