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Text: AU105 Transistors Ge PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)130 I(C) Max. (A)10 Absolute Max. Power Diss. (W)27 Maximum Operating Temp (øC)100õ I(CBO) Max. (A)500uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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AU105
time900n
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Text: MG50D2DM1 Transistors Independent MOSFET Power Module Circuits Per Package2 V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)50 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case I(DSS) Min. (A) I(GSS) Max. (A)150n @V(GS) (V) (Test Condition)20
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MG50D2DM1
time900n
HL080HD5
Code4-310
NumberTR00400310
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Untitled
Abstract: No abstract text available
Text: NTC1868 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)400öè V(BR)CBO (V) I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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NTC1868
time900n
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Text: GSI550 Transistors N-Channel IGBT with Current Sensing V BR CES (V)500 V(BR)GES (V)25 I(C) Max. (A)80 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case700m td(on) Max (s) On time delay100n t(r) Max. (s) Rise time200nÂ
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GSI550
Junc-Case700m
delay100nÃ
time200nÃ
time900nÃ
StyleTO-218
Code5-71
NumberTR00500071
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Untitled
Abstract: No abstract text available
Text: HGTG24N60D1 Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)25 I(C) Max. (A)40 Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case1.0 Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.
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HGTG24N60D1
delay100nÃ
time150nÃ
time900n
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Untitled
Abstract: No abstract text available
Text: NTC1867 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)250öè V(BR)CBO (V) I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)100 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100u÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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NTC1867
time900n
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Untitled
Abstract: No abstract text available
Text: MG30D2DM1 Transistors Independent MOSFET Power Module Circuits Per Package2 V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)30 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case I(DSS) Min. (A) I(GSS) Max. (A)100n @V(GS) (V) (Test Condition)20
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MG30D2DM1
time900n
HL093HD5
Code4-310
NumberTR00400310
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Untitled
Abstract: No abstract text available
Text: HGTG24N60D1D Transistors N-Channel IGBT V BR CES (V)600 V(BR)GES (V)25 I(C) Max. (A)40 Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC) Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case1.0 Thermal Resistance Junc-Amb. g(fe) Min. (S) Trans. admitt.
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HGTG24N60D1D
delay100nÃ
time150nÃ
time900n
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