TIES16A
Abstract: No abstract text available
Text: TIES16A Gallium Arsenide Infrared-Emitting Diodes Select Products Here Go Designed to emit near-infrared radiant energy when forward biased FEATURES ● High output power . . .100 mW Min at 25°C ● Hemispherically shaped 72-Mil-Diameter Chip ● Stud mounting for convenient heat sinking
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TIES16A
72-Mil-Diameter
01-inch
com/catalog/ties16a/ties16a
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TIES16A
Abstract: No abstract text available
Text: «701 TIES16A Gallium Arsenide Infrared-Emitting Diode Texas Optoelectronics, Inc. DESIGNED TO EM IT NEAR-IN FRARED R A D IEN T ENERGY WHEN FORW ARD BIASED • High Output Power . . . 100 m W Min at 25 °C • Hemispherically Shaped 72-Mil-Diameter Chip •
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TIES16A
72-Mil-Diameter
1L360
TIES16A
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TIES16A
Abstract: ceramic insulator
Text: I TEXAS OP TO EL EC T R O N I C S INC 10E D | 5=51=3=134 QDOOIDI t | «701 TIES16A Gallium Arsenide Infrared-Emitting Diode Texas Optoelectronics, Inc. D ESIG N ED TO EM IT NEAR-INFRARED RADIENT ENERGY W HEN FO RW ARD BIA SED • High Output Power . . . 1 0 0 m W Min at 25 °C
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TIES16A
72-Mil-Diameter
01-inch
ceramic insulator
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Untitled
Abstract: No abstract text available
Text: TIES16A Gallium Arsenide Infrared-Emitting Diode |f W Ê W KêJÊ Texas O ptoelectronics, Inc. DESIGNED TO EMIT NEAR-INFRARED RADIENT ENERGY WHEN FORW ARD BIASED • High Output Power . . . 100 m W Min at 25 °C • Hemispherically Shaped 72-Mil-Diameter Chip
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TIES16A
72-Mil-Diameter
G00D524
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TIL702
Abstract: TIL701 TIL393-9 til78 phototransistor TIL81 til312 7 segment display TIL78 TIL393 TIL313 TIL393-6
Text: m The Optoelectronics Data Book for Design Engineers T e x a s In s t r u m e n t s IMPORTANT NOTICES Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible. Tl cannot assume any responsibility for any circuits shown or
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LCC4230-D
EPN4050
TIL702
TIL701
TIL393-9
til78 phototransistor
TIL81
til312 7 segment display
TIL78
TIL393
TIL313
TIL393-6
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