41CR
Abstract: 41BL
Text: 41 BL M , 41CR(L) Quad 2-Input Exclusive OR Gate The 41BL(M) and 41CR(L) devices are bipolar, NPN, sealed junction, silicon integrated circuits. They are available in 16-pin plastic DIPs. E le c tric a l C h a ra c te ris tic s Vcc = 5.0 ±0.5 V, Tj = 0 to 85 • C
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16-pin
41CR
41BL
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c4002c
Abstract: No abstract text available
Text: KM41C4002C CMOS DRAM 4M x 1 Bit CMOS Dynamic RAM with Static Column Mode DESCRIPTION T h is is a fa m ily o f 4 ,1 9 4 ,3 0 4 x 1 bit S ta tic C o lu m n M o d e C M O S D R A M s . S ta tic C o lu m n M o d e o ffe rs high s p e e d ra n d o m o r s e q u e n tia l a c c e s s o f m e m o ry c e lls w ith in th e s a m e ro w . A c c e s s tim e -5 , -6, -7 o r -8 an d
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KM41C4002C
Q0E01LL
c4002c
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ceramic 87C451
Abstract: eprom ic signetics eprom 87c51
Text: S ig n e tic s 87C451 C M O S Single-Chip 8-Bit E P R O M Microcontroller Objective Specification Military Microprocessor Products DESCRIPTION FEATURES The S ign e tics 87C451 is an I/O e xpanded, sing ie -ch lp m icroco n tro lle r fa b rica te d w ith S ign e tics h ig h-density C M O S technology.
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87C451
87C451
87C51
ceramic 87C451
eprom ic
signetics eprom 87c51
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KM41C1000BJ
Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page
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KM4164BP
KM41C256P
KM41C256J
KM41C256Z
KM41C257P
KM41C257J
KM41C257Z
KM41C258P
KM41C258J
KM41C258Z
KM41C1000BJ
KM44C256BP
KM41C1000BP
KM41C1001BP
KM44C256BJ
km4164
KM44C1000LJ
KM41C464Z
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC L7E D • 7 ^ 4 1 4 2 DDlSb30 77D ■ SM6K KM41C4002B CMOS DRAM 4M x 1Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM 41C4002B is a C M O S high speed 4,194,304 x 1 Dynamic Random A cce ss Memory. Its de
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DDlSb30
KM41C4002B
41C4002B
41C4002B-6
110ns
41C4002B-7
130ns
41C4002B-8
150ns
R55-only
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LA1232
Abstract: No abstract text available
Text: LA1232 No. Cil 41c Monolithic Linear I n te g r a te d C ir c u it JF SANYO System Functions 1. IF aaip, limiter 2. Quadrature detector 3* AF preamp Muting at weak input 5. Muting during detuning / / 6. Signal meter d riv e ^U€pu|gif|äT. AFC,tuning meter drive output
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LA1232
330mVrms
LA1232
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Untitled
Abstract: No abstract text available
Text: HI GH- SPE ED 3.3V 2K x 8 DU A L - P O R T IDT71V321S/L IDT71V421S/L STATI C RAM WI TH I N T E R R U P T • • • • • FEATURES: • High-speed access — Industrial: 25ns max. — C om m ercial: 25/35/55ns (max.) • Low -power operation — ID T71V321S/ID T71V421S
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IDT71V321S/L
IDT71V421S/L
25/35/55ns
T71V321S/ID
T71V421S
IDT71V321L7IDT71V421L
IDT71V321
16-or-m
IDT71V421
71V421
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4118T
Abstract: tic 41c
Text: THIN FILM RESISTOR NETWORK MOLDED DIP/8, 14, 16, 18, AND 20 PIN 4ßm*> . • Low noise characteristics - w ■ Substrate of 99.5% pure alum ina ceram ic ■ C ustom circuits available per fa cto ry t t POUHNS Model 4100T FO R S C H E M A T IC S , SEE FO LLO W IN G PAGE.
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4100T
100ppm/
50ppm/
25ppm/
100Kohm
4118T
tic 41c
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Untitled
Abstract: No abstract text available
Text: CMOS DRAM KM41C258 256Kx 1 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM41C258 is a CMOS high speed 262,144 bit x 1 D ynam ic Random A ccess Mem ory. Its design is op tim ized fo r high perform ance ap p lica tio n s
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KM41C258
256Kx
KM41C258
100ns
KM41C258-7
KM41C258-8
KM41C258-10
130ns
150ns
180ns
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Untitled
Abstract: No abstract text available
Text: KM41C258 J CMOS DRAM 2 5 6 K x 1 Bit C M O S Dynamic R A M with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Sam sung KM41C258 is a CMOS high speed 262,144 b i t x 1 D ynam ic Random A cce ss M em ory. Its design is o p tim ized fo r high pe rform ance ap p lica tio n s
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KM41C258
KM41C258-7
KM41C258-8
KM41C258-10
100ns
130ns
150ns
180ns
KM41C258
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SDT7132
Abstract: No abstract text available
Text: OlDT HIGH SPEED 2K X 8 DUAL-PORT STATIC RAM WITH INTERRUPTS ÎDT71321SA/LA IDT71421SA/LA Featu res * * High-speed access - Commercial: 20/25t35/55ns max. - Industrial: 55ns (max.) MASTER IDT71321 easily expands data bus width to 16-ormore-bits using SLAVE IDT71421
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20/25t35/55ns
IDT71321/IDT71421SA
325mW
IDT71321/421LA
325mW
T71321S
T71421S
IDT71321
16-ormore-bits
IDT71421
SDT7132
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D4515
Abstract: d4518bc 74c920 74C929 4031B JRC 4069UBF D4518 74ls247 fairchild linear integrated circuits 74c14
Text: o #1 ’ FAIRCHILD 4 6 4 Ellis S tre e t, M o u n ta in V ie w , C a lifo rn ia 9 4 0 4 2 ‘ 1977 F a irch ild C am era and In stru m e n t C o rp o ra tio n /4 6 4 E llis S treet. M o u n ta in View. C a lifo rn ia 94042 / 4 15 9 6 2-5 0 1 1/TW X 910-3
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24-Pin
D4515
d4518bc
74c920
74C929
4031B JRC
4069UBF
D4518
74ls247
fairchild linear integrated circuits
74c14
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B41AB
Abstract: 875045c ICS RS 3197
Text: ►UNDER DEVELOPMENT e O lV HIGH-CURRENT VOLTAGE REGULATOR WITH RESET FUNCTION " 0 / /V O c r lc S The S-87X S eries is a lo w -po w e r h ig h -o u tp u t c u rre n t v o lta g e regulator with reset function, which integrates high-precision voltage detection and voltage regulation circuits on one chip. It affords m u c i
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S-87X
S-870
S-87XXXXC/D/E
S-87XXXXA/B
B41AB
875045c
ICS RS 3197
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Untitled
Abstract: No abstract text available
Text: KiWlft s HIGH-SPEED 4K X 8 DUAL-PORT STATIC SRAM IDT7134SA/LA F e a tu re s D e sc rip tio n ♦ High-speed access - Military: 25/35/45/55/70ns max. The IDT7134 is a high-speed 4K x 8 Dual-Port Static RAM designedto be used in systems where on-chip hardware portarbitration
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IDT7134SA/LA
IDT7134
20125135145155170ns
IDT7134SA
700mW
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74ls314
Abstract: SN75450BN RM741DC 74LS208 MC1711G 74s214 SN75361AP 74LS207 RS 75491 MC1741L
Text: PRODUCT RANGE PAGE M IC R O P R O C E S S O R S 2-21 M E M O R IE S MOS M IC R O P R O C E S S O R S & S U P P O R T C IR C U IT S 2 2 -2 7 28 2 9 -3 0 DTL TTL L IN E A R IN T E R F A C E C IR C U IT S 5 5 / 7 5 S e rie s C o n tr o l C ir c u its C ro s s -R e fe re n c e G u id e
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MCC1232
Abstract: MCC1235 MC1741C MC1741CP1 MCC1234 MCC1236 MCC1741C MCC1239
Text: LINEAR INTEGRATED CIRCUIT CHIPS G E N E R A L D E S C R IP T IO N M o to r o la n o w o ffe rs a ve ry b ro a d se le c tio n o f lin e a r integ rated c ir c u it c h ip s . A m o n g th e ty p e s o f c ir c u its w h ic h c o m p o se th e lin e a r f a m ily th e re are:
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MCC1741C-1)
MCC1200
MCC1232
MCC1234
MCC1236
MCC1235
MCC1239
MC1741C
MC1741CP1
MCC1236
MCC1741C
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Untitled
Abstract: No abstract text available
Text: SAMSUNG E LE C TR O N IC S IN C b?E T> 7^ 4 14 2 DD1«bl35 b3S • CMOS DRAM KM41C16102 16M x 1 Bit CMOS Dynamic RAM with Static Coiumn Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM41C16102 is a high speed CMOS 16,777,216 b it x 1 D ynam ic Random A ccess Memory. Its
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KM41C16102
KM41C16102
KM41C16102-6
110ns
KM41C16102-7
130ns
KM41C16102-8
150ns
aC16102
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A2LC
Abstract: No abstract text available
Text: »ID T HIGH-SPEED 4K X 8 DUAL-PORT STATIC SRAM ID T 7 13 4 S A /L A F e a tu re s D e s c rip tio n * High-speed access The IDT7134 is a high-speed 4K x 8 Dual-Port Static RAM designed to be used in systems where on-chip hardware port arbitration is not needed. This part lends itself to those systems which cannot
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25/35/45/55/70ns
20/25/35/45/55/70ns
IDT7134SA
700mW
IDT7134LA
48-pin
52-pin
M1L-PRF-38535
IDT7134
A2LC
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LA-2691
Abstract: IOT71321
Text: OlDT HIGH SPEED IDT71321SA/LA 2K X 8 DUAL-PORT IDT71421SA/LA STATIC RAM WITH INTERRUPTS Featu res * High-speed access - Commercial: 20/25/35/55ns max. Industrial: 55ns (max.) ♦ Low-power operation - IDT71321/IDT71421SA Active: 325mW(typ.) Standby: 5mW (typ.)
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20/25/35/55ns
IDT71321/IDT71421SA
325mW
IDT71321SA/LA
IDT71421SA/LA
IDT71321
16-ormore-bits
IDT71421
IDT71321;
LA-2691
IOT71321
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TWFC
Abstract: No abstract text available
Text: HIGH SPEED 3.3V 2K X 8 DUAL-PORT STATIC RAM WITH INTERRUPTS IDT71V321S/L IDT71V421S/L Features ♦ ♦ ♦ ♦ ♦ BUSY output flag on IDT71V321 ; BUSY input on IDT71V421 Fully asynchronous operation from either port Battery backup operation— 2V data retention
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IDT71V321S/L
IDT71V421S/L
25135155ns
IDT71V321/IDT71V421S
325mW
IDT71V321A/421
IDT71V321
IDT71V421
52-pin
TWFC
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TIP42C EQUIVALENT
Abstract: TIP 122 transistor APPLICATION NOTES TIP 122 transistor tip 127 TRANSISTOR equivalent transistor tip 5530 TIP 122 transistor APPLICATION circuit tip 147 TRANSISTOR equivalent TIP41A equivalent TIP42A equivalent TRANSISTOR tip 122
Text: TYPES TIP42, TIP42A, TIP42B, TIP42C P-N-P SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS F O R P O W E R -A M P L IF IE R A N D H IG H -SP EED -SW ITCH IN G A P P L IC A T IO N S D E S IG N E D F O R C O M P L E M E N T A R Y U S E W ITH T IP 4 1 , T IP 4 1 A , TIP 4 1 B , T IP 41C
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TIP42,
TIP42A.
TIP42B.
TIP42C
TIP41,
TIP41A,
TIP41B,
TIP41C
TIP42
TIP42A
TIP42C EQUIVALENT
TIP 122 transistor APPLICATION NOTES
TIP 122 transistor
tip 127 TRANSISTOR equivalent
transistor tip 5530
TIP 122 transistor APPLICATION circuit
tip 147 TRANSISTOR equivalent
TIP41A equivalent
TIP42A equivalent
TRANSISTOR tip 122
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MC1741C
Abstract: MC1741CP1 MCC1741C MCC5400 MCC54H87 MCC7400 MCC74H87 TYPE 7KB 7KB NC
Text: LINEAR INTEGRATED CIRCUIT CHIPS G E N E R A L D E S C R IP T IO N M o to ro la n o w o ffe rs a v e ry b road s e le c tio n o f lin e a r in te g ra te d c ir c u it c h ip s . A m o n g th e ty p e s o f c irc u its w h ic h com pose th e lin e a r fa m ily th e re are:
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49x52
MCC74136
MCC54136
69x72
MCC74141
MCC54141
77x78
MCC74145
MCC54145
79x87
MC1741C
MC1741CP1
MCC1741C
MCC5400
MCC54H87
MCC7400
MCC74H87
TYPE 7KB
7KB NC
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6RA3
Abstract: No abstract text available
Text: KM41C16102 CMOS DRAM 16M x 1 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Perform ance range: The S am sung KM41C16102 is a high speed CMOS 16,777,216 bit x 1 Dynam ic Random A ccess Memory. Its de sig n is op tim ized fo r high perform ance ap p lica tio n s
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KM41C16102
KM41C16102-7
KM41C16102-8
110ns
130ns
150ns
KM41C16102
6RA3
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Untitled
Abstract: No abstract text available
Text: HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT F eatures * INT flag for port-to-port com m unication * Battery backup operation— 2V data retention * TTL-com patible, sign al 5V ±10% power supply * Available in 52-pin P L C C * Industrial temperature range (-4 0 °C to +85°C) is available for
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52-pin
25135145155ns
IDT70121/70125S
IDT70121S/L
IDT70125S/L
IDT70121/70125L
IDT70121/1DT70125
IDT70121
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