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    Abstract: No abstract text available
    Text: S1E D • Û 1 3 tib71 Q D D 3 4 0 ^ 713 M S E K C SEMIKRDN S E M I K R O N INC Thyr istor Vrsm Vdrm Vrrm V V Diode Vrsm Vrrm V 1500 1400 2000 1700 1600 2500 2300 2200 3000 = 90 °<2 R.M.S. motor current pe phase) IMRMS 320 A (T e a s e | 410 A 360 A SKKH 131/14 E 20 SKKH 161/14 E 20 SKKH 210/14 E 20


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    PDF tib71 SKKH131 SKKL131 SKKH161 SKKL161 SKKH210 SKKL210 SKKT131, SKKT161,

    Untitled

    Abstract: No abstract text available
    Text: I T O S H IB A MICROW AVE POWER GaAa FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA TIM7179-30L ' FEATURES : • LOW INTERMODULATION DISTORTION IM S - - 4 3 dBo at Po - 34.5 dBm, Slnglt Carrier level - HIG H POWER P ldB a4 4 . 5dBmat 7.1 GHz to 7.9 QH* > H IG H GAIM


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    PDF TIM7179-30L 2-16G1B) TIB7179-30L 79-3QL-----------------------------------