THN5601 Search Results

THN5601 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Type	PDF
THN5601B		AUK	SiGe NPN Transistor		Original	PDF
THN5601B		Tachyonics	NPN SiGe RF POWER TRANSISTOR		Original	PDF
THN5601SF		Tachyonics	NPN SiGe RF POWER TRANSISTOR		Original	PDF

THN5601 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
smd transistor zl Abstract: rf transistor mar 8 DRF1401 THN5601B Text: THN5601B NPN SiGe RF POWER TRANSISTOR The THN5601B is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-223 SMD package. The THN5601B can be used as a driver device or an output device, depending on the specific application.	Original	PDF	THN5601B THN5601B OT-223 900MHz Mar-22-2005 100nF 100pF smd transistor zl rf transistor mar 8 DRF1401
R1401 Abstract: THN5601B Text: THN5601B Semiconductor SiGe NPN Transistor □ Applications Unit in mm SOT-223 o VHF and UHF band medium power amplifier 6.5 3.0 4 □ Features 3.5 7.0 o 4.8 V operation o P1dB = 28 dBm at f = 900 MHz 1 o GP = 8.5 dB at f = 900 MHz 2 3 2.3 0.7 4.6 Pin Configuration	Original	PDF	THN5601B OT-223 THN5601 R1401 THN5601B
16-2-472 Abstract: 161-717 45650 Transistor S 40442 SMD IC MARKING GP marking am1 smd 25804 403 inductor coil smd RF NPN POWER TRANSISTOR C 10-12 GHZ hn6501 Text: THN5601SF SOT-23F NPN SiGe RF POWER TRANSISTOR □ DESCRIPTION The THN5601SF is a low cost, NPN medium power SiGe HBT Hetero-Junction Bipolar Transistor encapsulated in a plastic SOT-23F SMD package. The THN5601SF can be used as a driver device or an output device, depending on the specific application.	Original	PDF	THN5601SF OT-23F THN5601SF OT-23F 26dBm 900MHz IS21I 16-2-472 161-717 45650 Transistor S 40442 SMD IC MARKING GP marking am1 smd 25804 403 inductor coil smd RF NPN POWER TRANSISTOR C 10-12 GHZ hn6501
Transistor S 40442 Abstract: THN5601SF 61529 78262 161-717 37185 177960 54368 120770 16-2-472 Text: THN5601SF Semiconductor SiGe NPN Transistor Unit in mm SOT-23F □ Applications o VHF and UHF band medium power amplifier □ Features o 4.8 V operation o P1dB = 26 dBm at f = 900 MHz o GP = 9.0 dB at f = 900 MHz □ hFE Classification Pin Configuration Pin No	Original	PDF	THN5601SF OT-23F 300GHz 500GHz 700GHz 900GHz 000GHz IS21I Transistor S 40442 THN5601SF 61529 78262 161-717 37185 177960 54368 120770 16-2-472
transistor 2SC5066 Abstract: 2sc5066 2SC5067 BFP620 UPC2709 2SC5066 data sheet thn6601b 2SC5066 datasheet NESG260234 BFP450 Text: Cross Reference RF Product Cross Reference Tachyonics THN5601B THN5702F THN6601B THN6701B THN405Z THN420Z THN450Z THN520Z THN620Z THN640Z THN4201E THN4201KF THN4201U THN4301E THN4301KF THN4301U THN4501E THN4501KF THN4501U THN6201E THN6201KF THN6201S THN6201U	Original	PDF	THN5601B THN5702F THN6601B THN6701B THN405Z THN420Z THN450Z THN520Z THN620Z THN640Z transistor 2SC5066 2sc5066 2SC5067 BFP620 UPC2709 2SC5066 data sheet thn6601b 2SC5066 datasheet NESG260234 BFP450
R1401 Abstract: FR4 dielectric constant 4.6 THN5601B 1695 GP 1 JS 0746 gp 738 Text: THN5601B Semiconductor SiGe NPN Transistor □ Applications Unit in mm SOT-223 o VHF and UHF band medium power amplifier 6.5 3.0 4 □ Features 3.5 7.0 o 4.8 V operation o P1dB = 28 dBm at f = 900 MHz 1 o GP = 8.5 dB at f = 900 MHz 2 3 2.3 0.7 4.6 Pin Configuration	Original	PDF	THN5601B OT-223 THN5601 R1401 FR4 dielectric constant 4.6 THN5601B 1695 GP 1 JS 0746 gp 738