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    THERMAL CYCLING RELIABILITY Search Results

    THERMAL CYCLING RELIABILITY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation

    THERMAL CYCLING RELIABILITY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd transistor 647

    Abstract: BUX84 BUX84S SC18
    Text: Philips Semiconductors Product specification NPN high voltage Power transistor FEATURES BUX84S SYMBOL • Fast switching • Excellent thermal stability • High thermal cycling performance • Low thermal resistance • Surface mounting package QUICK REFERENCE DATA


    Original     		PDF BUX84S OT428 BUX84S smd transistor 647 BUX84 SC18

    PHW20N50E

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHW20N50E FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance


    Original     		PDF PHW20N50E OT429 PHW20N50E

    PHP12N50E

    Abstract: PHW11N50E PHB11N50E PHP11N50E to247 pcb footprint
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHB11N50E, PHW11N50E


    Original     		PDF PHB11N50E, PHW11N50E PHW11N50E OT429 PHB11N50E PHP12N50E PHP11N50E to247 pcb footprint

    BYV133

    Abstract: common cathode to220 BYV133 TO220
    Text: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES BYV133, BYV133B series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance


    Original     		PDF BYV133, BYV133B BYV133 OT404 common cathode to220 BYV133 TO220

    PHB4N40E

    Abstract: PHP2N60 PHP4N40 PHP4N40E
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP4N40E, PHB4N40E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance


    Original     		PDF PHP4N40E, PHB4N40E PHP4N40E O220AB) PHB4N40E PHP2N60 PHP4N40

    74118

    Abstract: PBYR1525CT pbyr1525 SMD 547 DIODE TJ-108 DT138
    Text: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYL2525CT, PBYL2525CTB series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance


    Original     		PDF PBYL2525CT, PBYL2525CTB PBYL2525CT O220AB) OT404 YL2525CTB 74118 PBYR1525CT pbyr1525 SMD 547 DIODE TJ-108 DT138

    PHB9N60E

    Abstract: PHP10N60E PHW9N60E to247 pcb footprint
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance PHB9N60E, PHW9N60E


    Original     		PDF PHB9N60E, PHW9N60E PHW9N60E OT429 PHB9N60E PHP10N60E to247 pcb footprint

    PHP10N60E

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification PowerMOS transistors Avalanche energy rated PHP10N60E FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance


    Original     		PDF PHP10N60E O220AB) PHP10N60E

    PHW14N50E

    Abstract: C1520-0
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHW14N50E FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance


    Original     		PDF PHW14N50E OT429 PHW14N50E C1520-0

    PHP10N60E

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated PHP10N60E FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance


    Original     		PDF PHP10N60E O220AB) PHP10N60E

    IRFP460 application

    Abstract: SOT429 IRFP460 APPLICATION NOTE IRFP460 PHW20N50E
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated IRFP460 FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance


    Original     		PDF IRFP460 OT429 IRFP460 application SOT429 IRFP460 APPLICATION NOTE IRFP460 PHW20N50E

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated IRFP450 FEATURES SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance


    Original     		PDF IRFP450 IRFP450 OT429

    specification diode BY 127

    Abstract: BYV118 BYV118B PBYR1045CTD PBYR645CT diode BY 127 SPECIFICATION
    Text: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES BYV118, BYV118B series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance


    Original     		PDF BYV118, BYV118B BYV118 OT404 specification diode BY 127 PBYR1045CTD PBYR645CT diode BY 127 SPECIFICATION

    PBYR1045

    Abstract: PBYR1645 PBYR2045CT PBYR2045CTB
    Text: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYR2045CT, PBYR2045CTB series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance


    Original     		PDF PBYR2045CT, PBYR2045CTB PBYR2045CT OT404 PBYR1045 PBYR1645

    smd diode marking code t3

    Abstract: SMD 547 DIODE SCHOTTKY DIODES CROSS REFERENCE
    Text: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYL1525CT, PBYL1525CTB series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance


    Original     		PDF PBYL1525CT, PBYL1525CTB PBYL1525CT O220AB) OT404 YL1525CTB smd diode marking code t3 SMD 547 DIODE SCHOTTKY DIODES CROSS REFERENCE

    PHB6N60E

    Abstract: PHP3N60 PHP6N60E
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP6N60E, PHB6N60E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance


    Original     		PDF PHP6N60E, PHB6N60E PHP6N60E O220AB) PHB6N60E PHP3N60

    PHB3N60E

    Abstract: PHP2N60 PHP3N60E
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES PHP3N60E, PHB3N60E SYMBOL • Repetitive Avalanche Rated • Fast switching • Stable off-state characteristics • High thermal cycling performance • Low thermal resistance


    Original     		PDF PHP3N60E, PHB3N60E PHP3N60E O220AB) PHB3N60E PHP2N60

    BYV116B

    Abstract: SOT404 BYV116 PBYR325CTD VA23 BYV116B 25
    Text: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES BYV116, BYV116B series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance


    Original     		PDF BYV116, BYV116B BYV116 O220AB) OT404 SOT404 PBYR325CTD VA23 BYV116B 25

    PHD3055E

    Abstract: PHB3055E PHP3055E
    Text: Philips Semiconductors Preliminary specification TrenchMOS transistor FEATURES PHP3055E, PHB3055E, PHD3055E SYMBOL • ’Trench’ technology • Very low on-state resistance • Fast switching • High thermal cycling performance • Low thermal resistance


    Original     		PDF PHP3055E, PHB3055E, PHD3055E PHP3055E O220AB) PHB3055E OT404 PHD3055E

    tp142t

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES PBYL3025CT, PBYL3025CTB series SYMBOL • Low forward volt drop • Fast switching • Reverse surge capability • High thermal cycling performance • Low thermal resistance


    Original     		PDF PBYL3025CT, PBYL3025CTB PBYL3025CT O220AB) OT404 YL3025CTB tp142t

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN high voltage Power transistor FEATURES • • • • • BUX84S SYMBOL QUICK REFERENCE DATA Fast switching Excellent thermal stability High thermal cycling performance Low thermal resistance Surface mounting package


    OCR Scan     		PDF BUX84S BUX84S OT428

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Preliminary specification PowerMOS transistors Avalanche energy rated FEATURES PHP10N60E SYMBOL QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance Low thermal resistance


    OCR Scan     		PDF PHP10N60E PHP10N60E T0220AB)

    transistor P7n

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • • • • • PHP7N40E, PHB7N40E SYMBOL Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance Low thermal resistance


    OCR Scan     		PDF PHP7N40E, PHB7N40E PHP7N40E T0220AB) PHB7N40E transistor P7n

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistors Avalanche energy rated FEATURES • • • • • PHP6N50E, PHB6N50E SYMBOL Repetitive Avalanche Rated Fast switching Stable off-state characteristics High thermal cycling performance Low thermal resistance


    OCR Scan     		PDF PHP6N50E, PHB6N50E PHP6N50E T0220AB) PHB6N50E