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    THE SCHOTTKY DIODE Search Results

    THE SCHOTTKY DIODE Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    CUHS20S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS20F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15S60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    CUHS15F60 Toshiba Electronic Devices & Storage Corporation Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TRS10E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
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    THE SCHOTTKY DIODE Price and Stock

    Diodes Incorporated BAT43WS-7

    Diode Schottky 30V 0.1A 2-Pin SOD-323 T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com BAT43WS-7 133,469
    • 1 $1.84
    • 10 $1.84
    • 100 $1.84
    • 1000 $1.84
    • 10000 $0.497
    		Buy Now

    Diodes Incorporated B360-13

    Diode Schottky 60V 3A 2-Pin SMC T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com B360-13 109,871
    • 1 $3.55
    • 10 $3.55
    • 100 $3.55
    • 1000 $3.55
    • 10000 $0.984
    		Buy Now

    Diodes Incorporated B360-13-F

    Diode Schottky 60V 3A 2-Pin SMC T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com B360-13-F 36,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.12
    		Buy Now

    Diodes Incorporated B2100-13

    Diode Schottky 100V 2A 2-Pin SMB T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com B2100-13 26,734
    • 1 $3.04
    • 10 $3.04
    • 100 $3.04
    • 1000 $3.04
    • 10000 $0.89
    		Buy Now

    Diodes Incorporated SK34-7

    Diode Schottky 40V 3A 2-Pin SMC T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com SK34-7 25,271
    • 1 $4.24
    • 10 $4.07
    • 100 $0.644
    • 1000 $0.36
    • 10000 $0.36
    		Buy Now
    Find more THE SCHOTTKY DIODE price and stock on Findchips.com

    THE SCHOTTKY DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MBRS1100T3g

    Abstract: MBRS1100
    Text: Enabling Energy Efficient Solutions Product Overview Created on: 10/26/2011 MBRS1100: 100 V, 1.0 A Schottky Rectifier For complete documentation, see the data sheet Product Description The Schottky Rectifier employs the Schottky Barrier principle in a large area metal-to-silicon power diode. The Schottky


    Original     		PDF MBRS1100: MBRS1100T3G MBRS1100

    MicroMetrics

    Abstract: MZB600 MZB604 metal detector SCHOTTKY SCHOTTKY mzb 600 MZB 600 MZB601 MZB609
    Text: Schottky Diodes Schottky Diodes: MZB 600 Series Zero Bias Schottky Detector Diodes Description The MicroMetrics MZB 600 series Zero Bias Schottky Detector diodes are designed for use in video detectors and power monitors eliminating the need to provide external DC bias to the


    Original     		PDF MZB600 MZB601 MZB602 MZB603 MZB604 MZB605 MZB606 MZB607 MZB608 MZB609 MicroMetrics MZB600 MZB604 metal detector SCHOTTKY SCHOTTKY mzb 600 MZB 600 MZB601 MZB609

    diodes ir10

    Abstract: ir10 diode MicroMetrics SCHOTTKY DIODES ir10 Logic Gates "Schottky Diodes" MGR700
    Text: Schottky Diodes Schottky Diodes: MGR 700 Series General Purpose Schottky Diodes Description The MicroMetrics MGR 700 series are general purpose Schottky Barrier diodes specially designed to achieve a high voltage breakdown. This series of diodes can be used in the UHF and


    Original     		PDF MGR700 MGR701 MGR702 MGR703 MGR704 MGR705 diodes ir10 ir10 diode MicroMetrics SCHOTTKY DIODES ir10 Logic Gates "Schottky Diodes" MGR700

    DH324

    Abstract: DH312 DH314 DH313 DH315 DH301 DH303
    Text: SILICON SCHOTTKY DIODES Silicon Schottky barrier mixer diodes SILICON SCHOTTKY BARRIER MIXER DIODES Description Silicon Schottky barrier mixer diodes are available in the following configurations: • packaged • chip Low barrier diodes are required for applications where the Local Oscillator LO drive level is between


    Original     		PDF DH324 DH325 DH312 DH314 DH313 DH315 DH301 DH303

    DH324

    Abstract: DH312
    Text: SILICON SCHOTTKY DIODES Silicon Schottky barrier mixer diodes SILICON SCHOTTKY BARRIER MIXER DIODES Description Silicon Schottky barrier mixer diodes are available in the following configurations: • packaged • chip Low barrier diodes are required for applications where the Local Oscillator LO drive level is between


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON SCHOTTKY DIODES Silicon Schottky barrier mixer diodes SILICON SCHOTTKY BARRIER MIXER DIODES Description Silicon Schottky barrier mixer diodes are available in the following configurations: • packaged • chip Low barrier diodes are required for applications where the Local Oscillator LO drive level is between


    Original     		PDF

    b1c DIODE schottky

    Abstract: B1C ON SEMICONDUCTOR b1c diode SBRS81100T3G marking code B1C Diode SBRS81100 MBRS1100T3G marking code B19 Diode SBRS8190T3G diode b1c
    Text: MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G Preferred Devices Schottky Power Rectifier http://onsemi.com Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art


    Original     		PDF MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G MBRS1100T3/D b1c DIODE schottky B1C ON SEMICONDUCTOR b1c diode SBRS81100T3G marking code B1C Diode SBRS81100 MBRS1100T3G marking code B19 Diode SBRS8190T3G diode b1c

    diode b1c

    Abstract: No abstract text available
    Text: MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G Preferred Devices Schottky Power Rectifier http://onsemi.com Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art


    Original     		PDF MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G MBRS1100T3/D diode b1c

    GaAs MMIC ESD, Die Attach and Bonding Guidelines

    Abstract: all diode List Die Attach and Bonding Guidelines diode PN diode specifications Schottky schottky diode application die bonding DIODE 255 diode all
    Text: HSCH-9401 GaAs Schottky Diode Data Sheet Description The HSCH-9401 is a discrete Schottky barrier diode fabricated with the Schottky Barrier Integrated Diode SBID process. Features • fC >800 GHz Applications The HSCH-9401 is a general purpose millimeter wave


    Original     		PDF HSCH-9401 HSCH-9401 5988-4416E 5988-6154EN GaAs MMIC ESD, Die Attach and Bonding Guidelines all diode List Die Attach and Bonding Guidelines diode PN diode specifications Schottky schottky diode application die bonding DIODE 255 diode all

    MZB600

    Abstract: MZB601 SCHOTTKY mzb 600 MZB608 MicroMetrics MZB602 MZB603 MZB604 MZB605 MZB606
    Text: Schottky Diodes: MZB 600 Series Zero Bias Schottky Detector Diodes Description The MicroMetrics MZB 600 series Zero Bias Schottky Detector diodes are designed for use in video detectors and power monitors eliminating the need to provide external DC bias to the


    Original     		PDF MZB600 MZB601 MZB602 MZB603 MZB604 MZB605 MZB606 MZB607 MZB608 MZB609 MZB600 MZB601 SCHOTTKY mzb 600 MZB608 MicroMetrics MZB602 MZB603 MZB604 MZB605 MZB606

    b1c diode

    Abstract: b1c DIODE schottky B1C ON SEMICONDUCTOR MBRS1100T3 marking code B1C Diode marking code B19 Diode MBRS1100T3G MBRS190T3 MBRS190T3G marking code B1C
    Text: MBRS1100T3, MBRS190T3 Preferred Devices Schottky Power Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRS1100T3, MBRS190T3 MBRS1100T3/D b1c diode b1c DIODE schottky B1C ON SEMICONDUCTOR MBRS1100T3 marking code B1C Diode marking code B19 Diode MBRS1100T3G MBRS190T3 MBRS190T3G marking code B1C

    b1c DIODE schottky

    Abstract: marking code B1C Diode MBRS1100T3 diode b1c B1C ON SEMICONDUCTOR
    Text: MBRS1100T3, MBRS190T3 Preferred Devices Schottky Power Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRS1100T3, MBRS190T3 b1c DIODE schottky marking code B1C Diode MBRS1100T3 diode b1c B1C ON SEMICONDUCTOR

    MBRS1100T3

    Abstract: marking code B1C Diode MBRS190T3
    Text: MBRS1100T3, MBRS190T3 Preferred Devices Schottky Power Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRS1100T3, MBRS190T3 r14525 MBRS1100T3/D MBRS1100T3 marking code B1C Diode MBRS190T3

    b1c DIODE schottky

    Abstract: MBRS1100T3 marking code B1C Diode 1k 400 marking code B19 Diode diode b1c
    Text: MBRS1100T3, MBRS190T3 Preferred Devices Schottky Power Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRS1100T3, MBRS190T3 b1c DIODE schottky MBRS1100T3 marking code B1C Diode 1k 400 marking code B19 Diode diode b1c

    marking code B1C

    Abstract: b1c DIODE schottky MBRS1100T3 b1c diode MBRS1100T3G marking code B1C Diode diode b1c MBRS1100T3G DIODe MBRS190T3 MBRS190T3G
    Text: MBRS1100T3, MBRS190T3 Preferred Devices Schottky Power Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRS1100T3, MBRS190T3 MBRS1100T3/D marking code B1C b1c DIODE schottky MBRS1100T3 b1c diode MBRS1100T3G marking code B1C Diode diode b1c MBRS1100T3G DIODe MBRS190T3 MBRS190T3G

    b1c DIODE schottky

    Abstract: b1c diode marking code B1C Diode marking code B19 Diode marking code B1C diode b1c B1C ON SEMICONDUCTOR MBRS1100T3 5M MARKING CODE SCHOTTKY DIODE Diode marking CODE 5M smb
    Text: MBRS1100T3, MBRS190T3 Preferred Devices Schottky Power Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRS1100T3, MBRS190T3 b1c DIODE schottky b1c diode marking code B1C Diode marking code B19 Diode marking code B1C diode b1c B1C ON SEMICONDUCTOR MBRS1100T3 5M MARKING CODE SCHOTTKY DIODE Diode marking CODE 5M smb

    marking code B1C Diode

    Abstract: diode b1c B1C ON SEMICONDUCTOR b1c DIODE schottky MBRS1100T3 MBRS1100T3G MBRS190T3 MBRS190T3G
    Text: MBRS1100T3, MBRS190T3 Preferred Devices Schottky Power Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and


    Original     		PDF MBRS1100T3, MBRS190T3 MBRS1100T3/D marking code B1C Diode diode b1c B1C ON SEMICONDUCTOR b1c DIODE schottky MBRS1100T3 MBRS1100T3G MBRS190T3 MBRS190T3G

    Untitled

    Abstract: No abstract text available
    Text: MBRS140T3G, SBRS8140T3G Surface Mount Schottky Power Rectifier Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


    Original     		PDF MBRS140T3G, SBRS8140T3G MBRS140T3/D

    mbrs140t3g

    Abstract: SBRS8140T3 b14 smb diode
    Text: MBRS140T3G, SBRS8140T3G Surface Mount Schottky Power Rectifier Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


    Original     		PDF MBRS140T3G, SBRS8140T3G MBRS140T3/D mbrs140t3g SBRS8140T3 b14 smb diode

    MBRS140T3G

    Abstract: B14g b14 smb diode MBRS140T3 CASE 403A B14 diode on semiconductor
    Text: MBRS140T3 Preferred Device Surface Mount Schottky Power Rectifier Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide


    Original     		PDF MBRS140T3 MBRS140T3/D MBRS140T3G B14g b14 smb diode MBRS140T3 CASE 403A B14 diode on semiconductor

    Untitled

    Abstract: No abstract text available
    Text: STPSC6H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


    Original     		PDF STPSC6H065 O-220AC O-220AC STPSC6H065D STPSC6H065DI STPSC6H065B-TR STPSC6H065G-TR DocID023247

    Untitled

    Abstract: No abstract text available
    Text: STPSC4H065 650 V power Schottky silicon carbide diode Datasheet - production data Description A K The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure


    Original     		PDF STPSC4H065 O-220AC O-220AC STPSC4H065D STPSC4H065DI DocID023598

    Schottky Barrier Diodes

    Abstract: Diodes SCHOTTKY Rohm Schottky Barrier Diodes
    Text: Schottky barrier diodes Schottky barrier diodes Schottky barrier diodes are available in both leaded and surface mount packages. The Schottky barrier diodes data sheets are arranged in the following order in this chapter: • Rectifier diodes — surface mount rectifying diodes


    OCR Scan     		PDF LL-41) DO-41 Schottky Barrier Diodes Diodes SCHOTTKY Rohm Schottky Barrier Diodes

    BB529

    Abstract: BB521 BB531 pin diode do35 ITT BB221 b8221 1N6263 BB221 BB521 itt LL103A
    Text: SCHOTTKY DIODES Silicon Schottky Barrier Diodes in DO-35 Package for general purpose applications with low forward voltage drop and very fast switching times. Using the type designations L.L101A, LL103A, and so on, these Schottky Barrier diodes are available in the MiniMELF package with the


    OCR Scan     		PDF DO-35 LL101A, LL103A, SD101A* SD101B DO-41 BB529 BB521 BB531 pin diode do35 ITT BB221 b8221 1N6263 BB221 BB521 itt LL103A