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    THE JAPANESE DIODE BOOK Search Results

    THE JAPANESE DIODE BOOK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    THE JAPANESE DIODE BOOK Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    uPD3599

    Abstract: transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Seimi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 April 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


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    X10679EJFV0SG00 uPD3599 transistor nec 2SK2396 MOS FET BUZ 444 MC-7643 nec 3S4M 4305 regulator nec RD2.4S equivalent 2SC4305 NEC 2sA1441 nec NPN transistor SST 117 PDF

    lg crt monitor circuit diagram

    Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


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    X10679EJGV0SG00 lg crt monitor circuit diagram micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY PDF

    free transistor equivalent book 2sc

    Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


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    X10679EJHV0SG00 free transistor equivalent book 2sc uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002 PDF

    Untitled

    Abstract: No abstract text available
    Text: The streak camera is an ultra high-speed detector which captures light emission phenomena occurring in extremely shorttime periods. Streak Tube Preface This booklet has been put together in order to introduce the operating principle of streak cameras, show some examples of how streak cameras are used,


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    B1201 SHSS0006E01 APR/2008 PDF

    MIP51

    Abstract: MIP806 MIP803 MIP501 MIP704 MIP805 MIP824 MIP825 MIP826 MIP2
    Text: New EL Display Driving IPD Series with Built-in Diode MIP824/MIP825/MIP826 „ Overview Unit : mm This series of IPDs Intelligent Power Devices incorporates a diode which formerly was connected externally. It can drive an EL display with high brightness and low power consumption.


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    MIP824/MIP825/MIP826 MIP824 MIP825) MIP501 MIP511 MIP704 MIP709 MIP805 MIP13* MIP14* MIP51 MIP806 MIP803 MIP805 MIP825 MIP826 MIP2 PDF

    IPD Converter

    Abstract: MIP806 MIP814 MIP02 foreign exchange companies MIP2 MA2Z001 MIP501 MIP704 MIP805
    Text: New L a r g e - s c r e e n E L D r i ve r M I P 8 1 4 • Overview Unit : mm Part A 4.3±0.2 0.25±0.1 10 9 8 7 6 123 4 5 0.5±0.07 12˚ 6.3±0.2 MIP814 is an IPD Intelligent Power Device that can drive large-screen EL display units with low current to deliver exceptionally bright pictures. Its


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    MIP814 MIP501 MIP511 MIP704 MIP709 MIP805 MIP13* MIP14* MIP15* MIP16* IPD Converter MIP806 MIP02 foreign exchange companies MIP2 MA2Z001 MIP805 PDF

    HSC277

    Abstract: pin diode application
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    REJ27G0028-0100/Rev HSC277 pin diode application PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86727 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package  Overview MTM86727 is the composite MOS FET (N-channel MOS FET and schottky


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    2002/95/EC) MTM86727 MTM86727 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM76720 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package  Overview MTM76720 is the composite MOS FET (N-channel MOS FET and schottky


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    2002/95/EC) MTM76720 MTM76720 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86727 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Package  Overview MTM86727 is the composite MOS FET (N-channel MOS FET and schottky


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    2002/95/EC) MTM86727 MTM86727 PDF

    IC sine wave generator for automotive

    Abstract: DB2S311 DMT9FK01
    Text: This product complies with the RoHS Directive EU 2002/95/EC . DMT9FK01 Silicon epitaxial planar type (Diode) Silicon PNP epitaxial planar type (Tr) For high speed switching circuits For digital circuits • Features  Package  Two elements incorporated into one package (SBD + Tr)


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    2002/95/EC) DMT9FK01 DRAQA44E DB2S311 IC sine wave generator for automotive DB2S311 DMT9FK01 PDF

    MTM15624

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM15624 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For switching circuits • Package  Overview  Code Mini5-G1  Pin Name 1: Cathode 2: Drain


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    2002/95/EC) MTM15624 MTM15624 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . DMT9FK01 Silicon epitaxial planar type (Diode) Silicon PNP epitaxial planar type (Tr) For high speed switching circuits For digital circuits • Features  Package  Two elements incorporated into one package (SBD + Tr)


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    2002/95/EC) DMT9FK01 DRAQA44E DB2S311 DMT9FK010R PDF

    MTM76720

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM76720 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits M Di ain sc te on na tin nc ue e/ d • Package


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    2002/95/EC) MTM76720 MTM76720 PDF

    MIP2L4MY

    Abstract: mosfet MIP2L4MY MIP2L40MY 20/mosfet MIP2L4MY mip0 mip2e mip2L
    Text: MIP2L40MY Silicon MOS FET type integrated circuit • Features  Package  Reducing the average noise Adding a frequency jitter function to MIP2E/3E* series to dramatically reduce the average noise and simplify EMI parts  Stabilization of maximum electric power by input correction


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    MIP2L40MY O-220-A2 voltaP01* MIP00* MIP55* MIP816/826 MIP50* MIP02* MIP52* MIP56* MIP2L4MY mosfet MIP2L4MY MIP2L40MY 20/mosfet MIP2L4MY mip0 mip2e mip2L PDF

    mosfet MIP2L4MY

    Abstract: MIP2L40MY MIP2L4My MIP2L
    Text: MIP2L40MY Silicon MOS FET type integrated circuit • Features  Package  Reducing the average noise Adding a frequency jitter function to MIP2E/3E* series to dramatically reduce the average noise and simplify EMI parts  Stabilization of maximum electric power by input correction


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    MIP2L40MY O-220-A2 MIP803/804 MIP52 MIP816/826 MIP55 MIP50 MIP51 mosfet MIP2L4MY MIP2L40MY MIP2L4My MIP2L PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete XN09D61 Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD) Unit: mm 0.50+0.10 –0.05 0.16+0.10 –0.06 0.30+0.10 –0.05 1 2 3 (0.95) (0.95) 1.9±0.1


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    2002/95/EC) XN09D61 2SA2046 MA3ZD12 PDF

    MA3ZD12

    Abstract: XN09D58
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete XN09D58 Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD) Unit: mm 0.50+0.10 –0.05 0.16+0.10 –0.06 0.30+0.10 –0.05 • XN9D57 + MA3ZD12 SBD 2


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    2002/95/EC) XN09D58 XN9D57 MA3ZD12 MA3ZD12 XN09D58 PDF

    Untitled

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete XN09D57 Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD) Unit: mm 0.50+0.10 –0.05 0.16+0.10 –0.06 0.30+0.10 –0.05 • Basic Part Number • XN9D57 + MA3XD11


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    2002/95/EC) XN09D57 XN9D57 MA3XD11 PDF

    UN234

    Abstract: No abstract text available
    Text: Small Signal Transistor Arrays UNA0234 Silicon PNP epitaxial planar type 4 elements Silicon NPN epitaxial planar type (4 elements) Unit: mm For motor drives For Small motor drive circuits in general 0.2+0.1 –0.0 12° 0.3±0.1 16 151413121110 9 12 345678


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    UNA0234 UN234 PDF

    MTM86627

    Abstract: No abstract text available
    Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86627 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter For switching circuits • Package  Overview MTM86627 is the composite MOS FET (P-channel MOS FET and Schttoky


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    2002/95/EC) MTM86627 MTM86627 PDF

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-14847 Revision. 1 Product Standards MOS FET FC6B22220L FC6B22220L Gate resistor installed Dual N-channel MOS FET Unit: mm For lithium-ion secondary battery protection circuits 2.56 5 4 1 2 3 „ Features y Low source-source ON resistance:Rss on typ. = 8.2 m Ω(VGS = 4.5 V)


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    TT4-EA-14847 FC6B22220L PDF

    mip2e

    Abstract: mip2l3
    Text: MIP2L30MS Silicon MOS FET type integrated circuit • Features  Package  Reducing the average noise Adding a frequency jitter function to MIP2E/3E* series to dramatically reduce the average noise and simplify EMI parts  Stabilization of maximum electric power by input correction


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    MIP2L30MS RatP01* MIP00* MIP55* MIP816/826 MIP50* MIP02* MIP52* MIP56* MIP51* mip2e mip2l3 PDF

    mip2l3

    Abstract: mip2e 1/mip2l3 MIP2L30MS
    Text: MIP2L30MS Silicon MOS FET type integrated circuit • Features  Package  Reducing the average noise Adding a frequency jitter function to MIP2E/3E* series to dramatically reduce the average noise and simplify EMI parts  Stabilization of maximum electric power by input correction


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    MIP2L30MS MIP803/804 MIP52 MIP816/826 MIP55 MIP50 MIP51 mip2l3 mip2e 1/mip2l3 MIP2L30MS PDF