marking code 105 m5e
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3ZD120G Silicon epitaxial planar type For high speed switching • Package ■ Features • Forward current (Average) I F(AV) = 700 mA rectification is possible
|
Original
|
PDF
|
2002/95/EC)
MA3ZD120G
marking code 105 m5e
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3ZD12 Silicon epitaxial planar type Unit: mm For high speed switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward current (Average) I F(AV) = 700 mA rectification is
|
Original
|
PDF
|
2002/95/EC)
MA3ZD12
SC-79
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Composite Transistors XN09D58 Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD) Unit: mm 0.50+0.10 –0.05 0.16+0.10 –0.06 0.30+0.10 –0.05 • XN9D57 + MA3ZD12 SBD
|
Original
|
PDF
|
2002/95/EC)
XN09D58
XN9D57
MA3ZD12
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3ZD12 Silicon epitaxial planar type Unit: mm For high speed switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward current (Average) I F(AV) = 700 mA rectification is
|
Original
|
PDF
|
2002/95/EC)
MA3ZD12
SC-79
|
marking code 105 m5e
Abstract: MA3ZD120G MA3ZD120 marking code m5e
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3ZD120G Silicon epitaxial planar type M Di ain sc te on na tin nc ue e/ d For high speed switching • Package ■ Features ■ Absolute Maximum Ratings Ta = 25°C
|
Original
|
PDF
|
2002/95/EC)
MA3ZD120G
marking code 105 m5e
MA3ZD120G
MA3ZD120
marking code m5e
|
2SA2046
Abstract: MA3ZD12 XN09D61
Text: Composite Transistors XN09D61 Silicon PNP epitaxial planar type Tr Silicon epitaxial planar type (SBD) Unit: mm 0.50+0.10 –0.05 0.16+0.10 –0.06 0.30+0.10 –0.05 1 2 3 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 • Basic Part Number • 2SA2046 + MA3ZD12
|
Original
|
PDF
|
XN09D61
2SA2046
MA3ZD12
2SA2046
MA3ZD12
XN09D61
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3ZD12 Silicon epitaxial planar type Unit: mm For high speed switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ M Di ain sc te on na tin nc ue e/ d • Forward current (Average) I F(AV) = 700 mA rectification is
|
Original
|
PDF
|
2002/95/EC)
MA3ZD12
|
Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3ZD120G Silicon epitaxial planar type For high speed switching • Package • Code SMini3-F2 • Pin Name 1: Anode 2: N.C. 3: Cathode M Di ain sc te on na tin nc
|
Original
|
PDF
|
2002/95/EC)
MA3ZD120G
|
Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3ZD12 Silicon epitaxial planar type Unit: mm For high speed switching 0.3+0.1 –0 0.15+0.1 –0.05 1 2 (0.65) (0.65) Unit VR 20 V VRRM 25 V IF(AV) 700 mA IFSM 2 A Junction temperature Tj 125 °C Storage temperature Tstg −55 to +125
|
Original
|
PDF
|
MA3ZD12
|
Untitled
Abstract: No abstract text available
Text: Composite Transistors XN09D58 Silicon PNP epitaxial planar type Tr Silicon epitaxial planar type (SBD) Unit: mm 0.50+0.10 –0.05 0.16+0.10 –0.06 0.30+0.10 –0.05 • XN09D57 + MA3ZD12 SBD 2 V Collector-emitter voltage (Base open) VCEO −15 V Emitter-base voltage
|
Original
|
PDF
|
XN09D58
XN09D57
MA3ZD12
|
MA3ZD12
Abstract: 104 m5e
Text: Schottky Barrier Diodes SBD MA3ZD12 Silicon epitaxial planar type Unit : mm For high-speed switching circuits 2.1 ± 0.1 0.425 • Features 0.425 0.3 − 0 0.65 1.3 ± 0.1 1 0.65 2.0 ± 0.2 + 0.1 • S-mini type 3-pin package • Allowing to rectify under (IF(AV) = 700 mA) condition
|
Original
|
PDF
|
MA3ZD12
MA3ZD12
104 m5e
|
MA3ZD12
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3ZD12 Silicon epitaxial planar type Unit: mm For high speed switching 0.3+0.1 –0 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 3 1.25±0.1 2.1±0.1 • Features
|
Original
|
PDF
|
2002/95/EC)
MA3ZD12
MA3ZD12
|
104 m5e
Abstract: MA3ZD12
Text: Schottky Barrier Diodes SBD MA3ZD12 Silicon epitaxial planar type Unit: mm For high speed switching 0.3+0.1 –0 0.15+0.1 –0.05 1 2 (0.65) (0.65) 5° Rating Unit VR 20 V VRRM 25 V IF(AV) 700 mA IFSM 2 A Junction temperature Tj 125 °C Storage temperature
|
Original
|
PDF
|
MA3ZD12
104 m5e
MA3ZD12
|
MA3ZD12
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3ZD12 Silicon epitaxial planar type Unit: mm For high speed switching 0.3+0.1 –0 0.15+0.1 –0.05 M Di ain sc te on na tin nc ue e/ d 3 1.25±0.1 2.1±0.1 • Features
|
Original
|
PDF
|
2002/95/EC)
MA3ZD12
MA3ZD12
|
|
|
marking code 105 m5e
Abstract: MA3ZD120G
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3ZD120G Silicon epitaxial planar type For high speed switching • Package ■ Features • Code SMini3-F2 • Pin Name 1: Anode 2: N.C. 3: Cathode Th an W is k y
|
Original
|
PDF
|
2002/95/EC)
MA3ZD120G
marking code 105 m5e
MA3ZD120G
|
105 m5e
Abstract: 104 m5e M5E MARKING MA3ZD12
Text: Schottky Barrier Diodes SBD MA3ZD12 Silicon epitaxial planar type Unit : mm For high-speed switching circuits 2.1 ± 0.1 0.425 • Features 0.425 0.3 − 0 0.65 1.3 ± 0.1 1 0.65 2.0 ± 0.2 + 0.1 • S-mini type 3-pin package • Allowing to rectify under (IF(AV) = 700 mA) condition
|
Original
|
PDF
|
MA3ZD12
105 m5e
104 m5e
M5E MARKING
MA3ZD12
|
Untitled
Abstract: No abstract text available
Text: MA3ZD12 Silicon epitaxial planar type For high-speed switching circuits Unit : mm 0.3+0.1 –0 • Features 0.15+0.1 –0.05 5˚ • S-mini type 3-pin package • Allowing to rectify under IF(AV = 700 mA) condition • Low forward rise voltage V F (V F < 0.45 V)
|
Original
|
PDF
|
MA3ZD12
Symb12
|
MA3ZD12
Abstract: XN09D58
Text: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete XN09D58 Silicon PNP epitaxial planar type (Tr) Silicon epitaxial planar type (SBD) Unit: mm 0.50+0.10 –0.05 0.16+0.10 –0.06 0.30+0.10 –0.05 • XN9D57 + MA3ZD12 SBD 2
|
Original
|
PDF
|
2002/95/EC)
XN09D58
XN9D57
MA3ZD12
MA3ZD12
XN09D58
|
marking code yr
Abstract: No abstract text available
Text: MA3ZD12W SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE 3 Features • Low forward voltage • Allowing high density mounting 2 1 Marking Code: YR Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit VRRM 25 V VR 20 V Average Forward Current
|
Original
|
PDF
|
MA3ZD12W
marking code yr
|
105 m5e
Abstract: MA3ZD12
Text: Schottky Barrier Diodes SBD MA3ZD12 Silicon epitaxial planar type Unit: mm For high speed switching 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Forward current (Average) IF(AV) = 700 mA rectification is possible • Low forward voltage: VF < 0.45 V • High-density mounting is possible
|
Original
|
PDF
|
MA3ZD12
105 m5e
MA3ZD12
|
MIP2F3
Abstract: MIP2F4 MIP382 MIP2E7DMY mip2f2 mip291 MIP414S MIP2E5DMY mip411 MIP3E3SMY equivalent
Text: 2009 ver.2 Semiconductor Selection Guide Microcomputers, Bipolar ICs, Discrete Semiconductors Caution for Safety This product contains Gallium Arsenide GaAs . DANGER GaAs powder and vapor are hazardous to human health if inhaled or ingested. Do not burn, destroy, cut, cleave off, or chemically dissolve the
|
Original
|
PDF
|
PAMP13-N1
MIP2F3
MIP2F4
MIP382
MIP2E7DMY
mip2f2
mip291
MIP414S
MIP2E5DMY
mip411
MIP3E3SMY equivalent
|
ma3df25
Abstract: 2PG011 DD5X062J dg3d501 DSKTJ04 DA3DF50 DB2U308 SSMini2-F5-B DSK3J02 DSC3F01
Text: 2009 Discrete Semiconductors New Products Line-up Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
|
Original
|
PDF
|
respons39
O-220D-A1
MA26P02
MAZ3082J
2SC5779
MA26P07
MAZ3091
2SC5829
MA27E020G
ma3df25
2PG011
DD5X062J
dg3d501
DSKTJ04
DA3DF50
DB2U308
SSMini2-F5-B
DSK3J02
DSC3F01
|
2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
|
Original
|
PDF
|
responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
|
S-Mini
Abstract: SSMini s-mini 2-pin package
Text: New Low VF Schottky Barrier Diode Series ! Overview Low VF Schottky Barrier Diodes is ideal for the power source of personal computers and portable equipment. With extensive package configurations that range from SS Mini-type to New Mini Power-type packages, these diodes
|
Original
|
PDF
|
MA2Q705)
S-Mini
SSMini
s-mini 2-pin package
|
