Untitled
Abstract: No abstract text available
Text: surface mount t 2l CO M PATIBLE Wee DIP LOCIC DELAY LINE # T 2 L FA ST input and output T h e S M F L D L -T T L is o ffe re d in 76 d e la y s fro m 5 to 50 0n s. D elay to le ra n c e s a re m a in ta in e d a s s h o w n in th e a c c o m p a n y in g part
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SO-14
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BU9428KV
Abstract: BU9428KV-1 BU9428KV-1-2 TSZ22111-04
Text: TYPE PRODUCTS SEMICONDUCTOR LSI PAGE B U 9428K V 1/4 Silicon Monolithic integrated circuit USB host MP3 Decoder LSI B U 9428K V Audio products, etc. BU9428KV is MP3 decoder 1C which contains USB host l/F, audio DAC, system controller. •USB2.0 Full Speed host l/F function contained.
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BU9428KV
BU9428KV
TSZ02201-BU9428KV-1
TSZ22111-04
BU9428KV-1
BU9428KV-1-2
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betty
Abstract: No abstract text available
Text: DRAWING NO. 40-9428F-C U S T REVISIONS O FFIC IAL RELEASE Tr 01 Description: H.D. C rim p Pin .Female, 100/Bag Part No: 40-9428F Application: D -Sub Pin& S ockets C rim p Tool: N/A Im pedance: N/A F requency Range: N/A Material: Pin 11-27-09 P hosphor Bronze, Gold plated
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100/Bag
40-9428F
40-9428F
40-9428F-CUST
100/BAG
40-9428F-CUST
betty
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IRF19
Abstract: F7101 IRF1902 IRF7101 MS-012AA
Text: PD - 94282 IRF1902 HEXFET Power MOSFET l l l l Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel VDSS ID 85@VGS = 4.5V 170@VGS = 2.7V 4.0A 3.2A 20V Description These N-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing
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IRF1902
IRF19
F7101
IRF1902
IRF7101
MS-012AA
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Untitled
Abstract: No abstract text available
Text: PD - 94282A IRF1902 HEXFET Power MOSFET l l l l Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel VDSS ID 85@VGS = 4.5V 170@VGS = 2.7V 4.0A 3.2A 20V Description These N-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing
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4282A
IRF1902
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IRF1902
Abstract: F7101 IRF7101 MS-012AA 94282A
Text: PD - 94282A IRF1902 HEXFET Power MOSFET l l l l Ultra Low On-Resistance N-Channel MOSFET Surface Mount Available in Tape & Reel VDSS ID 85@VGS = 4.5V 170@VGS = 2.7V 4.0A 3.2A 20V Description These N-Channel HEXFET power MOSFETs from International Rectifier utilize advanced processing
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Original
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4282A
IRF1902
IRF1902
F7101
IRF7101
MS-012AA
94282A
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Untitled
Abstract: No abstract text available
Text: m " v " i k u ,:! Dîa light .* i;: 4 used • ■ v: * NOT A VALID PART NUM BER. THIS SHEET IS FOR R EFER E N C E ONLY. A B SO LUTE M A X IM U M RA TING S TA=25“C 3ID*xxxx ' TYPE* LED COLOR 3ID-9408 3ID-9427 3ID-9428 3ID-9498 Green Red Yellow Orange G reen
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3ID-9408
3ID-9427
3ID-9428
3ID-9498
100pA
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IRHM597160
Abstract: JANSR2N7550T1 IRHMS593160 IRHMS597160 JANSF2N7550T1
Text: PD-94283D RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHM597160 JANSR2N7550T1 100V, P-CHANNEL REF: MIL-PRF-19500/713 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHMS597160 100K Rads (Si) 0.05Ω IRHMS593160 300K Rads (Si)
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Original
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PD-94283D
O-254AA)
IRHM597160
JANSR2N7550T1
MIL-PRF-19500/713
IRHMS597160
IRHMS593160
JANSF2N7550T1
O-254AA
IRHM597160
JANSR2N7550T1
JANSF2N7550T1
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MOSFET IRF 713
Abstract: IRHMS597160 365A pin JANSR2N7550T1 IRHMS593160 JANSF2N7550T1 300Krads
Text: PD-94283E RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597160 JANSR2N7550T1 100V, P-CHANNEL REF: MIL-PRF-19500/713 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHMS597160 100K Rads (Si) 0.05Ω IRHMS593160 300K Rads (Si)
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PD-94283E
O-254AA)
IRHMS597160
JANSR2N7550T1
MIL-PRF-19500/713
IRHMS597160
IRHMS593160
JANSF2N7550T1
O-254AA
MOSFET IRF 713
365A pin
JANSR2N7550T1
JANSF2N7550T1
300Krads
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Untitled
Abstract: No abstract text available
Text: PD-94283C RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597160 JANSR2N7550T1 100V, P-CHANNEL REF: MIL-PRF-19500/713 R5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHMS597160 100K Rads (Si) 0.05Ω IRHMS593160 300K Rads (Si)
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Original
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PD-94283C
O-254AA)
IRHMS597160
JANSR2N7550T1
MIL-PRF-19500/713
IRHMS597160
IRHMS593160
JANSF2N7550T1
O-254AA
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IRHMS593160
Abstract: IRHMS597160 12V 30A voltage regulator
Text: PD - 94283A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597160 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHMS597160 100K Rads (Si) RDS(on) 0.05Ω ID -45A* IRHMS593160 300K Rads (Si) 0.05Ω -45A*
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Original
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4283A
O-254AA)
IRHMS597160
IRHMS597160
IRHMS593160
O-254AA.
MIL-PRF-19500
12V 30A voltage regulator
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Untitled
Abstract: No abstract text available
Text: PD-94283E RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597160 JANSR2N7550T1 100V, P-CHANNEL REF: MIL-PRF-19500/713 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHMS597160 100K Rads (Si) 0.05Ω IRHMS593160 300K Rads (Si)
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Original
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PD-94283E
O-254AA)
IRHMS597160
JANSR2N7550T1
MIL-PRF-19500/713
IRHMS597160
IRHMS593160
JANSF2N7550T1
O-254AA
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IRHMS593160
Abstract: IRHMS597160
Text: PD - 94283B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597160 100V, P-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHMS597160 100K Rads (Si) 0.05Ω IRHMS593160 300K Rads (Si) 0.05Ω ID -45A* -45A*
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Original
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94283B
O-254AA)
IRHMS597160
IRHMS597160
IRHMS593160
MIL-PRF-19500
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PDF
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IRHMS597160
Abstract: IRHMS593160
Text: PD - 94283 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-254AA IRHMS597160 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level IRHMS597160 100K Rads (Si) RDS(on) 0.049Ω ID -45A* IRHMS593160 300K Rads (Si) 0.049Ω -45A*
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Original
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O-254AA)
IRHMS597160
IRHMS597160
IRHMS593160
O-254AA.
MIL-PRF-19500
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IRF5NJ6215
Abstract: No abstract text available
Text: PD - 94284A HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ6215 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ6215 -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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4284A
IRF5NJ6215
-150V
-150V,
IRF5NJ6215
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IRF5NJ3315
Abstract: No abstract text available
Text: PD - 94287 HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ3315 150V, N-CHANNEL Product Summary Part Number BVDSS IRF5NJ3315 150V RDS(on) 0.08Ω ID 20A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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IRF5NJ3315
IRF5NJ3315
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IRF5NJ3315
Abstract: No abstract text available
Text: PD - 94287A HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ3315 150V, N-CHANNEL Product Summary Part Number BVDSS IRF5NJ3315 150V RDS(on) 0.08Ω ID 20A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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Original
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4287A
IRF5NJ3315
IRF5NJ3315
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94284A HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ6215 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ6215 -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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Original
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4284A
IRF5NJ6215
-150V
-150V,
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PDF
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IRF5NJ6215
Abstract: 75vds p mosfet
Text: PD - 94284 HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ6215 150V, P-CHANNEL Product Summary Part Number BVDSS IRF5NJ6215 -150V RDS(on) 0.29Ω ID -11A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
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Original
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IRF5NJ6215
-150V
-150V,
IRF5NJ6215
75vds p mosfet
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PDF
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Untitled
Abstract: No abstract text available
Text: PD-94287B HEXFET POWER MOSFET SURFACE MOUNT SMD-0.5 IRF5NJ3315 150V, N-CHANNEL Product Summary Part Number BVDSS IRF5NJ3315 150V RDS(on) 0.08Ω ID 20A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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Original
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PD-94287B
IRF5NJ3315
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PDF
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Untitled
Abstract: No abstract text available
Text: PD - 94286A HEXFET POWER MOSFET THRU-HOLE TO-254AA IRF5M3415 150V, N-CHANNEL Product Summary Part Number BVDSS IRF5M3415 150V RDS(on) 0.049Ω ID 35A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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Original
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4286A
O-254AA)
IRF5M3415
IRHM57163SED
IRHM57163SEU
MIL-PRF-19500
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PDF
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IRF5M3415
Abstract: No abstract text available
Text: PD - 94286 HEXFET POWER MOSFET THRU-HOLE TO-254AA IRF5M3415 150V, N-CHANNEL Product Summary Part Number BVDSS IRF5M3415 150V RDS(on) 0.049Ω ID 35A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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Original
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O-254AA)
IRF5M3415
IRHM57163SED
IRHM57163SEU
MIL-PRF-19500
IRF5M3415
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PDF
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IRF5M3415
Abstract: No abstract text available
Text: PD - 94286A HEXFET POWER MOSFET THRU-HOLE TO-254AA IRF5M3415 150V, N-CHANNEL Product Summary Part Number BVDSS IRF5M3415 150V RDS(on) 0.049Ω ID 35A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
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Original
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4286A
O-254AA)
IRF5M3415
IRHM57163SED
IRHM57163SEU
MIL-PRF-19500
IRF5M3415
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IN942
Abstract: IN945 IN945B 1N941 1N945 1N941B temperature-compensated zener 3b zener diode 1N943B MOTOROLA 1N942A
Text: 6 3 6 7 2 5 5 M O T O R O L A SC D I O D E S /OPTO ïF|b3t,7ESS 007Û0D1 b | ~ .— T V / -/ / 1N941,A,B MOTOROLA thru SEM ICONDUCTOR TECHNICAL DATA 1N945,A,B esig is k M u u M ii TEMPERATURE-COMPENSATED ZENER REFERENCE DIODES TEMPERATURECOMPENSATED SILICON ZENER
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1N941AB
1N945
1N941,
IN942
IN945
IN945B
1N941
1N941B
temperature-compensated zener
3b zener diode
1N943B MOTOROLA
1N942A
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PDF
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