TGM-20-2004
Abstract: fet 20 dB 14 ghz
Text: TGM-20-2004 Module Amplifier 2 GHz - 20 GHz This Module Amplifier offers exceptional performance over the band 2 GHz to 20 GHz with 20 dBm P1dB output power and 14 dB Gain. Teledyne Microwave amplifiers are balanced or feedback designs and manufactured with the latest MIC & MMIC
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TGM-20-2004
TGM-20-2004
fet 20 dB 14 ghz
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girl
Abstract: W528X W58100 W58101 W58102 W58103 W58104 W58105 W58106 W58110
Text: W581XX Design Guide ADPCM VOICE SYNTHESIZER Enhanced PowerSpeech INTRODUCTION The W581XX family is an enhanced version of the W528X PowerSpeech synthesizer series. The W581XX family features a ADPCM synthesizer and an 8-bit D/A converter to generate various kinds
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W581XX
W528X
W58100
W58101,
W58102,
W58103,
girl
W58101
W58102
W58103
W58104
W58105
W58106
W58110
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M9226
Abstract: TGS 308 S 8050 d 331 transistor TGA 345 tga 422 Ox51 s1507 MSS0607 5100H MSS1207
Text: MOSEL VITELIC INC. MSS0307/S0607/S0907/S1207/S1507/S1807 September 1996 3"/ 6"/ 9"/ 12" / 15" / 18" VOICE ROM Features Single power supply can operate at 2.4 V through 6.0 V. Current output can drive 8 ohm speaker with a transistor. The voice content can be separated to 32 sections.
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MSS0307/S0607/S0907/S1207/S1507/S1807
20000h)
dy17/31
dy23/31
PID247*
M9226
TGS 308
S 8050 d 331 transistor
TGA 345
tga 422
Ox51
s1507
MSS0607
5100H
MSS1207
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5V1 85C
Abstract: bzx 86 c BZX 86c BZ 6V2 1N4189 BZX 24 85C 85C3V3 85c 3v3 85c 5V6 bz-86
Text: DO 41 CB 101 Types V Z T /l2 T * IV) nom 1N 4 7 6 3 A 1N 4764 A 91 1N4187 B 110 120 100 1N 4188 B 1N 4189 B rZT/»ZT* (n ) max >ZT ImA) 250 350 2,8 3000 0,25 0,09 5 69 10 2,5 2,3 2 0,09 0,10 5 5 76 84 9,4 450 3000 0,25 4000 0,25 4500 0,25 0,10 5 91 8,6 7,8
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1N4189
1N4190B
5V1 85C
bzx 86 c
BZX 86c
BZ 6V2
BZX 24 85C
85C3V3
85c 3v3
85c 5V6
bz-86
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bf487
Abstract: transistor bf485
Text: Philips Semiconductors Product specification NPN high-voltage transistors BF483; BF485; BF487 FEATURES PINNING • Low feedback capacitance. PIN APPLICATIONS • Intended for use in video output stages in black-and-white and in colour television receivers.
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BF483;
BF485;
BF487
BF483
BF485
BF487
transistor bf485
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k 351 transistor
Abstract: MARKING G3 Transistor BF536 36I marking marking G3 sot-23 marking code 352 S2 MARKING TRANSISTOR
Text: N AMER PH ILIPS/DISCRETE ObE D bbS3T31 0Q1S70M 1 X BF536 SILICON PLANAR TRANSISTOR P-N-P transistor in a microminiature plastic envelope. Primarily intended for use as mixer in v.h.f. tuners. A lso suitable as r.f. amplifier and oscillator in f.m. tuners.
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bbS3T31
0Q1S70M
BF536
00157Gb
T-31-15
k 351 transistor
MARKING G3 Transistor
BF536
36I marking
marking G3
sot-23 marking code 352
S2 MARKING TRANSISTOR
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SF150U13
Abstract: sf150 sf150n13 SF150Q13 SF150L13
Text: SF150 L,N,Q,R,U 13 THYRISTOR SILICON DIFFUSED TYPE HIGH POl.'ER CONTROL APPLICATIONS. Unit in mm FEATURES: . Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage : j _gQg : Vrrm ‘ . Average On-State Current : I'p(AV) = 1 ’’OA . Turn-Off Time
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SF150
150/js
00A/As
00V//is
SF150L13
SF150N13
SF150Q13
SF150R13
SF150U13
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F25GZ51
Abstract: sf25gz51
Text: TOSHIBA SF25GZ51,SF25JZ51 TOSHIBA THYRISTOR SILICON PLANAR TYPE Ç F 7 R I7 R 1 Unit in mm MEDIUM POWER CONTROL APPLICATIONS • Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Average On-State Current Isolation Voltage • • !5.8 ±0.5 .
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SF25GZ51
SF25JZ51
SF25JZ51
F25GZ51
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Untitled
Abstract: No abstract text available
Text: TOSHIBA GATE TU RN -O FF THYRISTOR SEMICONDUCTOR T O SH IB A TECHNICAL SG2500GXH24 DATA S G 2 5 0 0 G XH 2 4 J Unit in mm INVERTER APPLICATION Repetitive Peak Off-State Voltage : V d rm ;= 4500V R.M.S On-State Current : It (RMS = 1200A Peak Turn-Off Current
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SG2500GXH24
i/dt-300A
SG2500GXH24
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SH400EX29C
Abstract: No abstract text available
Text: TO SH IB A SH400EX29C TOSHIBA ALLOY-FREE HIGHT SPEED THYRISTOR SH400EX29C Unit in mm HIGH POWER CONTROL APPLICATIONS Repetitive Peak Off-State Voltage : V d r m ì = 2500V "R ûi-iû f i fwiy^ 1T7Û * P q û V P o ir o v o û \ r n l f o îTû « tT -n t» n r J
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SH400EX29C
--400A
40//s
13-78F1A
SH400EX29C
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BUK583-60A
Abstract: No abstract text available
Text: Product specification Philips Semiconductors PowerMOS transistor Logic level FET GENERAL DESCRIPTION N -channel e nhancem ent m ode logic level field-effect pow er transistor in a plastic envelope suitable for surface m ount applications. T he device is intended fo r use in
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BUK583-60A
OT223
OT223.
OT223
BUK583-60A
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Objective specification TrenchMOS transistor FEATURES • • • • • • PHT4N10T SYMBOL QUICK REFERENCE DATA ’Trench’ technology Low on-state resistance Fast switching Stable off-state characteristics High thermal cycling performance
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PHT4N10T
PHN4N10T
OT223
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btw15
Abstract: Brown Boveri btw btw 14
Text: W assergeküh lte Sendetriode W a te r-C o o le d T ra n s m ittin g Trio de Triode d'ém ission à refroidissem en t par eau B T W 15-3 Hauptdaten Q u ick Reference D ata Caractéristiques principales Pa max V a max la max *P 0 max f max 22 12 7 66 100 kW
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BTL15-3
BTW15-3
btw15
Brown Boveri btw
btw 14
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L4937N
Abstract: No abstract text available
Text: SGS-THOMSON [M [R IUICT!©[iMeS L4937NPD DUAL 5V MULTIFUNCTION VOLTAGE REGULATOR P R E L IM IN A R Y D A T A - STANDBYOUTPUT VOLTAGE PRECISION 5V ±2% - OUTPUT2TRACKEDTOTHESTANDBYOUT PUT . OUTPUT 2 DISABLE FUNCTION FOR STANDBY MODE . VERY LOW QUIESCENT CURRENT, LESS
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L4937NPD
500mA
L4937NPD
L4937N
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t 130 tube brown boveri
Abstract: amplificateur BF brown boveri tube
Text: L u ftg ekü h lte Sendetriode A ir-C o oled T ra n s m ittin g Trio de Trio de d'ém ission à refroidissem en t par a ir BTL 50-3 5 Hauptdaten Q u ick Reference D ata Caractéristiques principales Pa max Vg max l a max *P 0 max f max 45 15 18 182 30 kW kV
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BTL50-3
BTL50-1
BTL50-3
ri14-11
-H-157
t 130 tube brown boveri
amplificateur BF
brown boveri tube
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2N2322A
Abstract: 2N2322-29 rgk 20/2 2N2322 2N2325 2N2323 2N2323A C511
Text: SCR C5 Series 2N2322-29 2N2322A-28A 1.6A RMS Up to 400 Volts C511 Diamond Base * _ T he C5 S eries of Silicon C ontrolled R ectifiers a re rev erse blocking th y ris to rs fo r use in low pow er sw itch in g and control ap p licatio ns. T hey fe a tu re tw o ra n g e s of g a te se n si
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2N2322-29
2N2322A-28A
2N2322-29â
2N2322A-28Aâ
20/xA
MIL-S-19500/276
2N2322-29)
2N2322A-26A)
2N2322A
2N2322-29
rgk 20/2
2N2322
2N2325
2N2323
2N2323A
C511
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TK75020
Abstract: TRF toko DRV315 toko 5c T145 toko tk
Text: 9 y 4 < * Œ £ Ü â Is 4 » > a — 9 M 'M i c o l S i S ^ h E M b ^ y x r n % i S K 7 > ^ TK 7 5 0 2 0 $ - Í 0 T 7 ' 1; $•-> 3 > - 7 ^ o . T ; K 7 f E * ñ # ^ ^ 4 - < ^ M - t ' 5 > - ¿ ^ á 5 i9 i t O t r T t T J l - ' , TSE^»a»T$v>0 S £f£gß
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C3-C011
TK75020
TK75020&
GC3-C011
GC3-C011B
TK75020
TRF toko
DRV315
toko 5c
T145
toko tk
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Y12-Z
Abstract: HEF4067BP HEF4067BT y12Z ron 350
Text: HEF4067B MSI 16-CHANNEL ANALOGUE MULTIPLEXER/DEMULTIPLEXER The H E F 4067B is a 16-channel anajogue m u ltip le x e r/d e m u ltip le x e r w ith fo u r address in p u ts A q to A 3 , an active LOW enable in p u t (E), sixteen independent in p u ts /o u tp u ts (Y q to Y 15) and a com m on
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HEF4067B
16-CHANNEL
7Z74592
Y12-Z
HEF4067BP
HEF4067BT
y12Z
ron 350
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MARKING Dt3
Abstract: LC marking code transistor marking VU SOT363 MARKING dt3 sot363 PUMD3
Text: DISCRETE SEMICONDUCTORS PUMD3 NPN/PNP resistor-equipped transistors Product specification Supersedes data of 1997 Jul 11 File under Discrete Semiconductors, SC04 Philips Sem iconductors 1998 Aug 10 PHILIPS Philips Semiconductors Product specification NPN/PNP resistor-equipped transistors
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15104/00/02/pp12
MARKING Dt3
LC marking code transistor
marking VU SOT363
MARKING dt3 sot363
PUMD3
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gy-80
Abstract: tcm1705a
Text: TEXAS INSTR -CLIN/INTFC3- SS 1>ËÏ ÖTblTSM D033*1ÌS 7 1 ^ 5 5 0 3391^7^ 7 5 ~ ô 7 ~ /5 TCM1705A h INTEGRATED SPEECH CIRCUIT FOR TELEPHONE SET TELECOMMUNICATION CIRCUITS APRIL 1983 N PACKAGE DUAL-IN-LINE PACKAGE TOP VIEW Monolithic replacement for hybrid coil for
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TCM1705A
gy-80
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marking code FTF
Abstract: x1 marking PUMT1
Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T PUMT1 PNP general purpose double transistor Preliminary specification Supersedes data of 1997 Jul 09 Philips Sem iconductors 1999 Apr 14 PHILIPS Philips Semiconductors Preliminary specification PNP general purpose double transistor
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SC-88;
115002/00/03/pp8
marking code FTF
x1 marking
PUMT1
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FPA016T
Abstract: FPC016-1 I3AV FPB01 DC24V buzzer 5VDC FPA016
Text: FPA series Numbering 1 FPA XïS-§- 016 T - — t r ~ 1 Tact switch mounting or not Series code % FPA With Tact Switch None or Spot Illuminated with Click I Number of Key kind of Mounting Sheet E p a ijv-h With P rinting Sheet 16+- 016 K A is-W ? 1 FPB 016
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DC24V
AC250V
10MfllUÂ
UL94V-C
FPA016T
FPC016-1
I3AV
FPB01
buzzer 5VDC
FPA016
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115E
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BC847BS NPN general purpose double transistor 1999 Apr 28 Product specification Supersedes the data of 1997 Jul 14 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification NPN general purpose double transistor
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BC847BS
BC847BS
SC-88
115002/00/02/pp8
115E
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BYV29
Abstract: bbS3T31
Text: 2SE D m ^53=131 0D55517 4 BYV29 SERIES N AMER PHILIPS/DISCRETE 7 ^ 0 3 - /7 ULTRA FAST RECOVERY RECTIFIER DIODES Glass-passivated, h ig h -e fficie n cy e p ita xia l re c tifie r diodes in p lastic envelopes, fe a tu rin g lo w fo rw a rd voltage drop, u ltra fast reverse recovery tim es w ith ve ry lo w stored charge and soft-recovery
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0D55517
BYV29
T-03-17
byv29â
M0802
bb53T31
002252b
bbS3T31
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