Untitled
Abstract: No abstract text available
Text: TGF1350SPC-X Transistors N-Channel UHF/Microwave MESFET V BR DSS (V)8.0 V(BR)GSS (V)-5.0 I(D) Max. (A)100m P(D) Max. (W)700m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)30m I(DSS) Max. (A)100m @V(DS) (V) (Test Condition) @Temp (øC) (Test Condition) g(fs) Min. (S) Trans. conduct.40m
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TGF1350SPC-X
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TGF1350
Abstract: No abstract text available
Text: Product Data Sheet May 17, 2001 Discrete MESFET TGF1350-SCC Key Features and Performance • • • • • • 0.5 um x 300 um FET 1.5 dB Noise Figure with 11dB Associated Gain at 10 GHz 2.5 dB Noise Figure with 7 dB Associated Gain at 18 GHz All-gold Metallization for High Reliability
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TGF1350-SCC
TGF1350-SCC
0007-inch
TGF1350
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TGF1350-SCC
Abstract: No abstract text available
Text: Product Data Sheet Discrete MESFET TGF1350-SCC Key Features and Performance • • • • • 0.5 um x 300 um FET 1.5 dB Noise Figure with 11dB Associated Gain at 10 GHz 2.5 dB Noise Figure with 7 dB Associated Gain at 18 GHz All-gold Metallization for High Reliability
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TGF1350-SCC
TGF1350-SCC
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TGF1350-SCC
Abstract: No abstract text available
Text: Product Data Sheet February 1, 2002 Discrete MESFET TGF1350-SCC Key Features and Performance • • • • • • 0.5 um x 300 um FET 1.5 dB Noise Figure with 11dB Associated Gain at 10 GHz 2.5 dB Noise Figure with 7 dB Associated Gain at 18 GHz All-Gold Metallization for High Reliability
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TGF1350-SCC
TGF1350-SCC
0007-inch
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Untitled
Abstract: No abstract text available
Text: TGF1350XPM-X Transistors N-Channel UHF/Microwave MESFET V BR DSS (V)8.0 V(BR)GSS (V)-5.0 I(D) Max. (A)100m P(D) Max. (W)700m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)30m I(DSS) Max. (A)100m @V(DS) (V) (Test Condition) @Temp (øC) (Test Condition) g(fs) Min. (S) Trans. conduct.40m
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TGF1350XPM-X
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Untitled
Abstract: No abstract text available
Text: TGF1350SPM-X Transistors N-Channel UHF/Microwave MESFET V BR DSS (V)8.0 V(BR)GSS (V)-5.0 I(D) Max. (A)100m P(D) Max. (W)700m Maximum Operating Temp (øC)150õ I(DSS) Min. (A)30m I(DSS) Max. (A)100m @V(DS) (V) (Test Condition) @Temp (øC) (Test Condition) g(fs) Min. (S) Trans. conduct.40m
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TGF1350SPM-X
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TGA2517
Abstract: TQP6M9002 TQM653029 TGS4304 SG-O1-16 TGA2503 TAT7469 TGA9092-SCC 854651 AH125
Text: 02/2010 Triquint SEMICONDUCTOR Product Selection Guide 2010 ABOUT TRIQUINT SEMICONDUCTOR ABOUT TRIQUINT SEMICONDUCTOR Corporate Headquarters – Hillsboro, Oregon Corporate Headquarters – Hillsboro, OR Semiconductor is Digital a leading TriQuint TriQuint
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cus937
TGA2517
TQP6M9002
TQM653029
TGS4304
SG-O1-16
TGA2503
TAT7469
TGA9092-SCC
854651
AH125
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TGA2519-SG
Abstract: HPA Ku TGF4350-EPU HPA41 ic 7435 TGC4401-EPU ku vsat amplifier TGA2512 price tga8658 TGA2519
Text: Microwave / Millimeter Wave Products GaAs MMICs and Discretes for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: i n f o - s a l e s @ t q s . c o m
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AsareavailableforkeybandsacrossDCto100GHz
Alldevicesare100%
11GHzCut-OffFreq
TGC1430F-EPU
TGC1430G-EPU
TGC4401-EPU
TriQuintSemiconductor5/06
S11/S22
DC-20
DC-18
TGA2519-SG
HPA Ku
TGF4350-EPU
HPA41
ic 7435
TGC4401-EPU
ku vsat amplifier
TGA2512 price
tga8658
TGA2519
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TGA2517
Abstract: TQP6M9002 TQM7M5013 TGA4943-SL CGB241 TQM6M4003 bt ag402 TGA4956-SM TQM6M4048 TGA9092-SCC
Text: TABLE OF CONTENTS About TriQuint Semiconductor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3 Guide by Market Automotive . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4
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TGF2023-20
Abstract: T1G6003028-SP TGF2023-02 TGF2021-08-SG T1G6000528 TGF2023-10 TGF2023-01 EAR99 T1G6000528-Q3 TGF2023-05
Text: RF Power Innovation: GaN & GaAs Devices TriQuint Semiconductor supports the RF and microwave needs of worldwide defense and aerospace contractors with high power, high frequency Gallium Nitride GaN and Gallium Arsenide (GaAs) devices. Each technology offers unique performance and application advantages. As an R&D and product development leader in both
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TG2H214220-FL
Abstract: TGA2572 TGA2573 lte transceiver TGA2540-FL TQM963014 TGA2517 TQM6M9069 TQP6M9002 TQM7M5013
Text: Product Selection Guide Choose TriQuint’s Innovative RF Solutions Connecting the Digital World to the Global Network Welcome to Our Product Selection Guide Table of Contents About TriQuint Semiconductor.3 Guide by Market Automotive. 4
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ka band lna
Abstract: TGA4820-EPU ka band Limiter HPA Ku diode 142 19C ka Band LNA, mixer TGB2001-EPU HPA-40 ka band power fet ka band space lna
Text: Microwave / Millimeter Wave Products GaAs MMICs for Broadband, Military and Space TriQuint Semiconductor Phone: +1-972-994-8465 Fax: +1-972-994-8504 E-mail: info-mmw@tqs.com Web: www.triquint.com TriQuint uses proven 0.25µm power pHEMT and 0.15µm LN processes to design MMICs for
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TGA2517
Abstract: TGA2540-FL TGA2573 TQM7M5013 TQP6M9002 tga2540 tqp340003 TQM726018 QFN28 6x6 TQM679002A
Text: May 2010 Product Selection Guide Amplifiers Control Products Filters Integrated Products Optical Components Connecting the Digital World to the Global Network Table of Contents ABOUT TRIQUINT SEMICONDUCTOR .2 GUIDE BY MARKET Automotive . 4
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TGF1350
Abstract: No abstract text available
Text: Texas Instruments TGF1350 Low-Noise Microwave GaAs FET Features • 1.5-dB noise figure with 11 -dB associated gain at 10 GHz ■ 2.2-dB noise figure with 7-dB associated gain at 18 GHz ■ All-gold metallization ■ Recessed 1/2-^m gate structure ■ Si3N4 channel passivation
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TGF1350
TGF1350
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microwave fet
Abstract: No abstract text available
Text: TGF1350-SCC LOW-NOISE MICROWAVE FET AP PR O VAL 5079 0.5 |am x 300 |am FET 1.5-dB Noise Figure With 11-dB Associated Gain at 10 GHz 2.5-dB Noise Figure With 7-dB Associated Gain at 18 GHz Ail-Gold Metallization for High Reliability Recessed Gate Structure
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TGF1350-SCC
11-dB
TGF1350-SCC
MS/402
microwave fet
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Untitled
Abstract: No abstract text available
Text: Discrete MESFET l"fl^ ET A M V V • ■ # 0.5 iim x 300 Mm FET £ 1.5-dB Noise Rgure with 11-dB Associated Gain at 10-GHz £ 2.5-dB Noise Rgure with 7-dB Associated Gain at 18-GHz Q All-gold Metallization for High Reliability Recessed Gate Structure DESCRIPTION
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11-dB
10-GHz
18-GHz
TGF1350-SCC
18-GHz.
Emai08
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power amplifier 12 GHZ
Abstract: GHz Power FET TGA8021 A 8014 tga8300 618 FET TGS8250 x-band power amplifier SPDT FETs amplifier 1 2 ghz
Text: MMC GaAs Products Device Selection Guide AMPLIFIERS FREQ DEVICE DESCRIPTION TG A 8014 6-18 GHz power amplifier TG A 8035 6-18 GHz general-purpose NOMINAL NOISE MISCELLANEOUS GAIN FIGURE FEATURES RANGE 6 -18 GHz 8 dB POWER @ 1 dBc 27 dBm to 14 GHz 14% Power-added
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TGA8061
TGA8021
TGF1350
300-/im
17dBm
TGF4212
500-itm
TGS8122
S8250
power amplifier 12 GHZ
GHz Power FET
A 8014
tga8300
618 FET
TGS8250
x-band power amplifier
SPDT FETs
amplifier 1 2 ghz
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