Untitled
Abstract: No abstract text available
Text: Advance Product Information April 16, 2001 300um Discrete pHEMT TGF4350-EPU Key Features and Performance • • • 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration
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TGA4350EPU
Abstract: TGF4350-EPU microwave heating source configuration
Text: Advance Product Information 300um Discrete pHEMT TGF4350-EPU Key Features and Performance • • • 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration Chip Dimensions 0.5080 mm x
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300um
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TGA4350EPU
TGF4350-EPU
microwave heating source configuration
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Untitled
Abstract: No abstract text available
Text: Advance Product Information January 18, 2001 300um Discrete pHEMT TGF4350-EPU Key Features and Performance • • • 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration
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300um
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0007-inch
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TGF4350-EPU
Abstract: No abstract text available
Text: TriQuint <+ Advance Product Information . SEMICONDUCTOR 300um Discrete pHEMT TGF4350-EPU Key Features and Performance 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration
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OCR Scan
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300um
TGF4350-EPU
0007-inch
TGF4350-EPU
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Untitled
Abstract: No abstract text available
Text: Advance Product Information SEMICONDUCTOR, 300um Discrete pHEMT TGF4350-EPU Key Features and Performance 0.25um pHEMT Technology DC 22 GHz Frequency Range 1.2 dB NF, 14.5 dB Associated Gain at 10 GHz, 3V Operation Floating Source Configuration Chip Dimensions 0.457 mm x
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OCR Scan
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300um
TGF4350-EPU
0007-inch
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