TGA1319A
Abstract: TGA4506
Text: Not Recommended for New Designs Product Data Sheet August 5, 2008 TriQuint Recommends the TGA4506 be used for New Designs Ka Band Low Noise Amplifier TGA1319A Key Features and Performance • • • • • • Chip Dimensions 1.984 mm x .923 mm 0.15um pHEMT Technology
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TGA1319A
Abstract: TGA1319A-EPU
Text: Advance Product Information June 14, 2001 Ka Band Low Noise Amplifier TGA1319A-EPU Key Features and Performance • • • • • • Chip Dimensions 1.984 mm x .923 mm 0.15um pHEMT Technology 21-27 GHz Frequency Range 2 dB Nominal Noise Figure 19 dB Nominal Gain
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TGA1319A
Abstract: TGA1319A-EPU
Text: Advance Product Information November 5, 2001 Ka Band Low Noise Amplifier TGA1319A-EPU Key Features and Performance • • • • • • 0.15um pHEMT Technology 21-27 GHz Frequency Range 2 dB Nominal Noise Figure 19 dB Nominal Gain 12 dBm Pout 3V, 45 mA with -0.5V < Vg < +0.5V
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Untitled
Abstract: No abstract text available
Text: Advance Product Information January 19, 2001 Ka Band Low Noise Amplifier TGA1319A Key Features and Performance • • • • • • Chip Dimensions 1.984 mm x .923 mm 0.15um pHEMT Technology 21-27 GHz Frequency Range 2 dB Nominal Noise Figure 19 dB Nominal Gain
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TGA1319A
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TGA1319A
Abstract: No abstract text available
Text: Advance Product Information August 29, 2000 Ka Band Low Noise Amplifier TGA1319A Key Features and Performance • • • • • • Chip Dimensions 1.985 mm x .980 mm 0.15um pHEMT Technology 21-27 GHz Frequency Range 2 dB Nominal Noise Figure 19 dB Nominal Gain
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TGA1319A
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TGA1319A
Abstract: No abstract text available
Text: Product Application Note November 6, 2001 Robust Bias Option for 0.15 µm pHEMT MMIC Low-Noise Amplifiers Background: A bias network has been designed for low-noise MMIC amplifiers fabricated using the 0.15 um pHEMT process. This process exhibits a low pinch-off
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