Untitled
Abstract: No abstract text available
Text: MN34041PL 1.1 Product Summary • Outline This is a MOS-type sensor of 1/3 type offering 2.1 mega pixels. This product consists of embedded photodiode, pixel block by MOS transistor, column AD converter, built-in timing generator TG , high speed serial output I/F and functional
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MN34041PL
12-bit
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Untitled
Abstract: No abstract text available
Text: MN34041PL 1.1 Product Summary • Outline This is a MOS-type sensor of 1/3 type offering 2.1 mega pixels. This product consists of embedded photodiode, pixel block by MOS transistor, column AD converter, built-in timing generator TG , high speed serial output I/F and functional
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MN34041PL
12-bit
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C2680
Abstract: C5191
Text: 1 2 3 4 5 6 7 8 9 A A B B A B C C C D D E Series CPRJ RCA Jack F Style J03207 R/A Through Hole Item Name 1 Housing 2 Outer Contact 3 Shunt Spring 4 Tip Spring 5 Terminal Schematic Bushing Plating Terminal Plating X GD XX A,B,C see diagram GD=Gold std TG=Tin Terminal
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J03207
C2680
C5191
CPRJ-J03207-X-XX-XX-XX
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CPRJ-WTJ03207-X-XX-XX-XX
Abstract: C5191 C2680
Text: 1 2 3 4 5 6 7 8 9 A A B B A B C C C D D E Series CPRJ RCA Jack F Style J03207 R/A Through Hole Item Name 1 Housing 2 Outer Contact 3 Shunt Spring 4 Tip Spring 5 Terminal Schematic Bushing Plating Terminal Plating X GD XX A,B,C see diagram GD=Gold std TG=Tin Terminal
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J03207
C2680
C5191
CPRJ-WTJ03207-X-XX-XX-XX
CPRJ-WTJ03207-X-XX-XX-XX
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1b1-1
Abstract: 1279BTG
Text: 1279 Series PCMCIA Memory Card Connector Unit: Metal ejector 1279ATG* 0 A=0{0) fG)A?Æ2i.087) (F) A=3.0G118) ffi)A=*0(.157) (J) A=5.0G197) ÍS) A=S.Sf.217) (P) A=8.0£315) ÍR)A=10.0Í394) IHMB=1.1(XM3) Voltage 5V 1279*TG*00Q 1279*TG*GI0 1279*TG*FB) 1279*TG*HOO
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1279ATG*
2J2C087)
1279TG
3G327)
3C-40Â
0C315)
1279BTG*
1b1-1
1279BTG
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Untitled
Abstract: No abstract text available
Text: SANSHA ELECTRIC MF G CO 37E ]> 7HH12M3 0000211 2 ESEMJ En J SEP ? 7 1888 . 0 $ T -ie -lS - T~ POWER SEMCONDUCTORS ^ ISOLATED TRIAC MOLD TYPE TG SERIES • TO-3 Isolated Mounting. 2.5kV RMS Isolation • Voltage Range Up to 600V • High Commutating dv/dt TG-F SERIES
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7HH12M3
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t-con lg
Abstract: LG TCON T-CON BOARD lg
Text: GMM7641210CT/TG-6/7 LG Semicon Co.,Ltd. 1,048.576 WORDS x 64 BIT CMOS EDO DYNAMIC RAM MODULE Description Features The GM M 7641210CT/TG is an 1M x 64 bits EDO Dynamic RAM MODULE which is assembled 4 pieces o f 1M x 16bit EDO DRAMs in 44 pin TSOP II package, one 20bit
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GMM7641210CT/TG
16bit
20bit
56pin
48pin
GMM764121
7641210CT/TG
7641210C
GMM7641210CT/TG-6/7
t-con lg
LG TCON
T-CON BOARD lg
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Untitled
Abstract: No abstract text available
Text: GM M 7644110CT/TG-6/7 LG Semicon Co.,Ltd. 4,194,304 WORDS x 64 BIT CMOS EDO DYNAMIC RAM MODULE Description Features The GM M 7644110CT/TG is an 4M x 64 bits EDO Dynamic RAM MODULE which is assembled 16 pieces o f 4M x 4bit EDO DRAMs in 24 pin TSOP II package, two
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GMM7644110CT/TG
16bit
48pin
GMM76441
7644110CT/TG
7644110CT/TG
7644110CT/TG-6/7
I644110CT/TG
i0000
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LG 42 T-con board
Abstract: No abstract text available
Text: GMM7642210CT/TG-6/7 LG Semicon Co., Ltd. 2,097,152 WORDS x 64 BIT CMOS EDO DYNAMIC RAM MODULE Description Features The G M M 764221OCT/TG is an 2M x 64 bits EDO Dynamic RAM MODULE which is assembled 8 pieces o f 1M x 16bit EDO DRAMs in 44 pin TSOP II package, one 20bit
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GMM7642210CT/TG-6/7
764221OCT/TG
16bit
20bit
56pin
48pin
76422I0CT/TG
GMM7642210CT/TG
LG 42 T-con board
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2SC4230
Abstract: No abstract text available
Text: H F X series Switchirç Power Transistor 2a 2SC4230 NPN ÎT2V80HFX) > IW B r f s iE I Outline Dimensions •'VrO-’-T V - - " - JSN M W O fc '^ .a S& ir: Absolute Maximum Ratings « ^ ft Conditions 12 # Symbol Item iS 'ffiS .S L Storage Temperature T s tg
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2SC4230
T2V80HFX)
DD03b07
2SC4230
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Q0410-1
Abstract: Q0410 q3036 qualcomm table of figures Q0410-2
Text: ÛUALCOMM I N C / bbE D • Q ualco/wa TGÜ333b 7 4 e! ■ Û U A L Product Information Q3500 Series o f Voltage Controlled O scillators FEATURES • Wide-Band Frequency Synthesis: Octave and near-octave bandwidths • Robust Performance. No moding, dropout, or
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Q3500
Q0410-1
Q3500C-0916T
Q0410-2
Q0710-1
Q3036
Q2334
Q0410
qualcomm table of figures
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ELY 1120
Abstract: No abstract text available
Text: GMM764421OCT/TG-6/7 LG Semicon Co.,Ltd. 4,194,304 W O R D S x 64 BIT CMOS EDO DYNAMIC RAM MODULE Description Features The G M M 7 6 4 4 2 1OCT/TG is an 4M x 64 bits EDO D ynam ic R A M M O D U L E w hich is assem bled 16 pieces o f 4M x 4bit EDO D R A M s in 24 pin T SO P tl package, tw o
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GMM7644210CT/TG
16bit
48pin
GMM764421OCT/TG-6/7
1111111HH1
ELY 1120
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Untitled
Abstract: No abstract text available
Text: Tg] QuickSwitch Products High-Speed CMOS ßUS Switch With Active High and Low Enables fà Semiconductor, I nc . advance INFORMATION FEATURES/BENEFITS DESCRIPTION • The QS3862 and QS32862 each provide a set of ten high speed CMOS, TTL Compatible bus switches.
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QS3862
QS32862
PSS-28A
MO-137AE
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transistor TL 431 g
Abstract: 2SC4233
Text: M I 'D - h 7> vX 5 t H F X series Switching Power Transistor O utline Dimensions 3a 2SC4233 T3V80HFX (NPN) Absolute Maximum Ratings m g ie n Symbol Item 1 i ^ ff Conditions T s tg Storage Temperature Junction Temperature 3 1/7? • Collector to Base Voltage
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2SC4233
T3V80HFX)
G003bi3
transistor TL 431 g
2SC4233
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M216
Abstract: BO-92
Text: IGBT MODULES Dimensions mm 93 11 32_ 12^ A - t S . S ' 29 03.2 50 - i. ' ' tg . E (M •gj 1: 8 8 108 2 -M 6 0.6 3 0 1 : Gate 2 : Collector 3 : Emitter 24 20 2 -M 4 (F series 2 -M 6 (L series) 29 , 2-M6 \ ” El-si« 2 -M 4 — -1 1 IW|i lb'.x: [ f u,"
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AF94-390)
AF91-399)
AF92-423)
AF94-391)
AF91-3991)
AF94-388)
M216
BO-92
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Untitled
Abstract: No abstract text available
Text: m NBÌEX M57959L Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 G B tG D r ìV G f Hybrid Integrated Circuit For Driving IGBT Modules Block Diagram Description: Outline Drawing Dimensions in mm (\ M57959L is a hybrid integrated
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M57959L
M57959L
20kHz,
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2SC4234
Abstract: No abstract text available
Text: H F X series Switching Power Transistor 2SC4234 3a TP3V80HFX (NPN) • Î O utline Dimensions 6 Absol ut e Maximum Ratings JS s IE n Sym bol Item ft f* C onditions « T s tg S to ra g e T e m pe ratu re « -g -s c s a « J u n c tio n T e m pe ratu re 3 1 /? ? • ^ —
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2SC4234
TP3V80HFX)
00Q3blS
2SC4234
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BPW21 centronic
Abstract: BPW21 photodiode BPX65 BPX65 BPX63 Centronic BPX66 T018 BPW-21
Text: CENTRONIC INC-. E-0 DIV TG DE J m S E S G DD00177 7 I P ro -E le ctro n S e rie s o f P h o to d io d e s 1995250 C E N T R O N IC IN C , E -0 90D 00177 D H \^ S 'f “ BPX63, BPX65, BPX66, BPW21 The Centronic pro-electron series of photodiodes are in quantity production.
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BPX63,
BPX65,
BPX66,
BPW21
BPX63
BPX65
BPX66
BPW21
95Qnm
BPW21 centronic
photodiode BPX65
Centronic
T018
BPW-21
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M1S5
Abstract: transistor rf m 1104
Text: II if f ir o I W l C f U j - t i -f t - im t-* £ S 6 l l l l 140 C o m m e rc e D rive M o n tg o m eryville , PA 18936-1013 T e i: 2 1 5 6 3 1 -9 8 4 0 T G G < £ Ö 2 3 ~ 0 RF & MICROWAVE TRANSISTORS MICROWAVE TELECOMMUNICATION APPLICATIONS PReOUENCY
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TGC2S23--S
TCC2023-6
SfKI/18
M1S5
transistor rf m 1104
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88-108mhz
Abstract: 300w amplifier 88-108mhz rf power 88-108mhz transistor k 385 M175 ALG TRANSISTOR SD1483 c 1685 transistor 108MHz 865 RF transistor
Text: r M I ? ^P roducts llr l/ C f l g M r» S Z ’f f Progresa Powered by Technology 140 C o m m e rc e D riv e M o n tg o m e ry v ille , PA 18936-1013 Tel: 2 1 5 6 3 1 -9 8 4 0 SD1483 RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS FM CLASS C TRANSISTOR
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88-108MHz
SD1483
2x22pF
1-14pF
C14-1nF
47uF-63V
SD1483
S86SD14SM
88-108mhz
300w amplifier 88-108mhz
rf power 88-108mhz
transistor k 385
M175
ALG TRANSISTOR
c 1685 transistor
108MHz
865 RF transistor
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Untitled
Abstract: No abstract text available
Text: rnnu Ultra Bright GaAIAs Lamps J f G aA IA s AM Round Type 0 5.0mm Series T yp e No. L ig h tin g C olo r L N 2 8 9 C U Q . R ed Absolute Maximum Ratings T a=25 °C Lighting Color PD (mW) tp { mA ) If p ( m A )* V r (V ) T o p ri'C ) T s tg ('C )
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LN289CUQ
Typ20
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LC1920
Abstract: IM2110CPL IM2110
Text: IM2110 256 x 12 Color Lookup Table and DAC GENERAL DESCRIPTION i# ': FEATURES The IM2110 is designed specifically f i r colok<jf#j!>hics, and integrates a 256 x 12 color lookup tg t# , three 4-bit DACs, and a microprocessor interface. The color lookup table is stored in a RAM and may be
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IM2110
IM2110
16-bit
RS-343-A
LC1920
IM2110CPL
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j373
Abstract: RS-520 diode GIJ diode
Text: 6 0 V v 'J - X /W -M O S F E T 60V SERIES POWER MOSFET S & X -f p -^ A > ? ;u .x > /\> ^ y > s s a O U T L IN E D IM E N S IO N S -6 0 v -2 0 I fefàm a R A T IN G S lÎÊÎÎHÿtJÊËfê Absolute Maximum Ratings m 11 ul! n r Symbol * T s tg Storage Temperature
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-60v-20A
STO-220
j373
RS-520 diode
GIJ diode
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Untitled
Abstract: No abstract text available
Text: TATlilAN L I T O N E LECTRONI C M LITEM i ttU MTE D • J L U r K T -1 % M l e d flflBSbRS U f l J l a m L D0D3MÔ1 bfil ITLIT l , p s LTL-10203/10203W RED LTL-10213 BRIGHT RED LTL-10223/10223W H tG H E F FIC IE N C Y RED LTL-10233/10233W GREEN LTL-10253/10253W YELLOW
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LTL-10203/10203W
LTL-10213
LTL-10223/10223W
LTL-10233/10233W
LTL-10253/10253W
LTL-10293W
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