Untitled
Abstract: No abstract text available
Text: System Overview WW-SRCB02 System Overview A Quick Selection Guide Quick Selection Guide B REPLACES SA101N60C-LP PAN-WAY NON-METALLIC SURFACE RACEWAY TABLE OF CONTENTS Office Furniture Raceway Office Furniture C Cove Cove Raceway D TG-70 Raceway E TG-70
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WW-SRCB02
SA101N60C-LP
TG-70
TG-70
Twin-70
Twin-70
SA-TM03CB02A
SA-WDCB05
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E 153302
Abstract: 30342 093789 66771 antenna CDMA GPRS 5071C 141186 531424
Text: SPECIFICATION Part No. : TG-09 Specification No : TG-09-Multi-Band Product Name : Multi-band Monopole Antenna for Mobile Phone Bands GSM/GPRS/EDGE/UMTS/CDMA/WCDMA/HSPA Features : Monopole Multi-Band Antenna R/A-SMA Hinged 180º 70*10*10mm RoHS Complaint Photo
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TG-09
TG-09-Multi-Band
E 153302
30342
093789
66771
antenna CDMA GPRS
5071C
141186
531424
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TGS 880
Abstract: No abstract text available
Text: September 1996 Revision 1.0 DATA SHEET EOB2UV6482- 60/70 TG-S 16MByte (2M x 64) CMOS EDO DRAM Module - 3.3V General Description TheEOB2UV6482-(60/70)TG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 2M words by 64 bits, in a 144-pins, small outline dual-in-line (SO DIMM) memory modules.
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EOB2UV6482-
16MByte
TheEOB2UV6482-
16-megabyte
144-pins,
MB81V17805A-
MP-DRAMM-DS-20392-9/96
TGS 880
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION PATENT PENDING Part No. : TG.30.8113 Product Name : Apex Hinged TG.30 Ultra-Wideband 4G LTE Antenna Feature : LTE / GSM / CDMA /DCS /PCS / WCDMA / UMTS / HSDPA / GPRS / EDGE /GPS /Wi-Fi 698MHz to 960MHz, 1575.42MHz 1710MHz to 2700Mhz Typical 70%+ Efficiency and 3dBi+ Peak Gain
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698MHz
960MHz,
42MHz
1710MHz
2700Mhz
SPE-12-8-124/A/WY
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION PATENT PENDING Part No. : TG.30.8113W Product Name : Apex White Hinged TG.30 Ultra-Wideband 4G LTE Antenna Feature : LTE / GSM / CDMA /DCS /PCS / WCDMA / UMTS / HSDPA / GPRS / EDGE /GPS /Wi-Fi 698MHz to 960MHz, 1575.42MHz 1710MHz to 2700Mhz Typical 70%+ Efficiency and 3dBi+ Peak Gain
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698MHz
960MHz,
42MHz
1710MHz
2700Mhz
SPE-12-8-125/A/WY
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Untitled
Abstract: No abstract text available
Text: September 1996 Revision 1.0 DATA SHEET EOB1UV641 1/4 -(60/70)TG-S 8MByte (1M x 64) CMOS EDO DRAM Module - 3.3V General Description The EOB1UV641(1/4)-(60/70)TG-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized as 1M words by 64 bits, in a 144-pins, small outline dual-in-line (SO DIMM) memory modules.
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EOB1UV641
144-pins,
MB81V1
1Mx16
MP-DRAMM-DS-20393-9/96
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION PATENT PENDING Part No. : TG.30.8113 Product Name : Apex Hinged TG.30 Ultra-Wideband 4G LTE Antenna Feature : LTE / GSM / CDMA /DCS /PCS / WCDMA / UMTS / HSDPA / GPRS / EDGE /GPS /Wi-Fi 698MHz to 960MHz, 1575.42MHz 1710MHz to 2700Mhz Typical 70%+ Efficiency and 3dBi+ Peak Gain
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PDF
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698MHz
960MHz,
42MHz
1710MHz
2700Mhz
SPE-12-8-124/A/WY
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Untitled
Abstract: No abstract text available
Text: SPECIFICATION PATENT PENDING Part No. : TG.30.8113W Product Name : Apex White Hinged TG.30 Ultra-Wideband 4G LTE Antenna Feature : LTE / GSM / CDMA /DCS /PCS / WCDMA / UMTS / HSDPA / GPRS / EDGE /GPS /Wi-Fi 698MHz to 960MHz, 1575.42MHz 1710MHz to 2700Mhz Typical 70%+ Efficiency and 3dBi+ Peak Gain
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698MHz
960MHz,
42MHz
1710MHz
2700Mhz
SPE-12-8-125/A/WY
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T70CIW
Abstract: LP-CSISPEC-TG70-1 TG70 1350mm TG70IW
Text: PAN -W AY ® TG-70 Surface Raceway System SPECIFICATION SHEET specifications TG non-metallic multi-channel surface raceway shall be used to route, protect and conceal data, voice, video, fiber optic and power cabling. The raceway shall be listed as suitable for use in applications up to 600
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TG-70
TIA/EIA-568-B
com/srsp13
SRSP13
WW-SRSP13
SA117N308-LP
T70CIW
LP-CSISPEC-TG70-1
TG70
1350mm
TG70IW
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Untitled
Abstract: No abstract text available
Text: PAN-WAY MINI-COM SLOPED SNAP-ON FACEPLATES FOR USE WITH PANDUIT T-70, TWIN-70, TE70, TG-70 AND OFCR70 SURFACE RACEWAY ROUTING SYSTEMS AND FAST-SNAP JUNCTION BOXES PART NUMBERS: T70FH2, T70FH4, T70FV2, T70FV4, UIT70FH2, UIT70FH4, UIT70FV2, UIT70FV4 OF70FH2, OF70FH4, OF70FV2, OF70FV4
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TWIN-70,
TG-70
OFCR70
T70FH2,
T70FH4,
T70FV2,
T70FV4,
UIT70FH2,
UIT70FH4,
UIT70FV2,
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GTSQ150
Abstract: wrench AS85049 STRAP TG70 TG-70 Glenair 06324 torque values
Text: Assembly Tools TG70 Strap Wrench 6.50 165.1 Approx. A 3/8 (9.5) Square Drive for Torque Wrench GTSQ150 B 3.0 (76.2) Diameter Max. with 18 inch strap 2.0 (50.8) Diameter Max. with 12 inch strap C VARIANCE CHART TG-70 Strap Wrench Used with Glenair Torque Wrenches
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GTSQ150
TG-70
G70515
G70515-18
GTSQ150
wrench
AS85049
STRAP
TG70
Glenair 06324 torque values
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Untitled
Abstract: No abstract text available
Text: ELECTRICAL SOLUTIONS A. System Overview B1. Cable Ties Pan-Way TG-70 Surface Raceway System • UL and CSA rated 600 V; meets UL 5A and CSA C22.2 No. 62.1-03 standards; FT4 rated • Large cable capacity with aesthetically pleasing design • Tamper resistant
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TG-70
TG-70
TG70IW8
TG70IW10
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Glenair 28840
Abstract: AS85049 TG70 TG-70
Text: MIL-DTL28840 TG70 Strap Wrench Assembly Tool for Use with MIL-DTL-28840 Connectors 6.50 165.1 Approx. B 3/8 (9.5) Square Drive for Torque Wrench 3.0 (76.2) Diameter Max. with 18 inch strap 2.0 (50.8) Diameter Max. with 12 inch strap VARIANCE CHART TG-70 Strap Wrench Used with Glenair
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MIL-DTL28840
MIL-DTL-28840
TG-70
G70515
G70515-18
Glenair 28840
AS85049
TG70
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KS0108
Abstract: S0107 TG X 046
Text: CM 1 9 2 6 4-4 AB S OLUT E MAXIMUM R AT ING S Item S ymbol S upply V oltage Logic S upply V oltage(LC D) Input V oltage Operating T emp. S torage T emp. V DD VO VI T opr T s tg ME C HANIC AL DAT A Min. Max. 7.0 19.0 V DD + 0.3 70 80 -20 -30 Unit V V V °C
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Untitled
Abstract: No abstract text available
Text: cP September 1996 Révision 1.0 ~ DATA SHEET - £ OB2U V6482- 60/70 TG-S 16MByte (2Mx 64) CMOS EDO DRAM Module - 3.3V General Description TheEOB2UV6482-(60/70)TG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized
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V6482-
16MByte
TheEOB2UV6482-
16-megabyte
144-pins,
V17805A-
144-pin
158x2
0070x2
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Untitled
Abstract: No abstract text available
Text: cP September 1996 Revision 1.0 DATA S H E E T- EOB1UV641 1/4 -(60/70) TG-S 8MByte (1Mx 64) CMOS EDO DRAM Module -3.3V General Description The EO B1UV641(1/4)-(60/70)TG-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module orga
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EOB1UV641
B1UV641
144-pins,
MB81V1
1Mx16
144-pin
158x2
0070x2
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TGS 880
Abstract: No abstract text available
Text: FUJITSU September 1996 Revision 1.0 DATA SHEET - EOB2U V6482- 60/70 T G -S 16MByte (2Mx 64) CMOS EDO DRAM Module -3.3V General Description TheEOB2UV6482-(60/70)TG-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized
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V6482-
16MByte
TheEOB2UV6482-
16-megabyte
144-pins,
MB81V17805A-
TGS 880
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IC AN 7220
Abstract: BPK-72 Bubble Memory 8080 intel microprocessor pin diagram BPK-70 Bubble Memory BPK72 BPK70 BPK70A Bubble Memory intel 80286 design kit IC 7905 pin diagram
Text: [P^ILORSIOMÀW ¡n tg l BPK 70 1MBIT BUBBLE MEMORY SUBSYSTEM BPK 70-1 0 °C to 75°C BPK 70-4 10°C to 5 5 °C BPK 70-5 - 2 0 ° C to 85°C 1 Mbit 128K Bytes Non-volatile, Solid-state, Read/Write Bubble Memory Subsystem Interfaces to Host Microprocessor
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20-pin
IC AN 7220
BPK-72 Bubble Memory
8080 intel microprocessor pin diagram
BPK-70 Bubble Memory
BPK72
BPK70
BPK70A
Bubble Memory
intel 80286 design kit
IC 7905 pin diagram
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Untitled
Abstract: No abstract text available
Text: ¡n tg l M5164/M5164L HIGH-SPEED 8,192 x 8 BIT CMOS STATIC RAM Standard M ilitary Drawings # 5962-89691 & # 5962-85525 -25 -35 -45 -70 Max. Access Time ns 25 35 45 70 Max. D.C. Supply Current (mA) 110 100 100 100 Max. Standby Current (mA) 20 20 20 20 High-Speed Address/Chip Select
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M5164/M5164L
M5164
M5164L
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TSOP 66 Package
Abstract: 1M-22M 1m x 16 memory module 64 x32 dram K x 1 DRAM
Text: ORDERING INFORMATION LG Sem icon DRAM MODULE ORDERING INFORMATION 4MD BASE GMM XXX XXX XXX X X X - XX SPEED 60 70 80 PREFIX O F LGS MEMORY MODULE FAMILY PA C K A G E* TERMINAL 7 : DRAM S : SOJ, SOLDER SG : SOJ, GOLD T : TSOP, SOLDER TG : TSOP, GOLD fiB G
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16SPIN
200PIN
144PIN
TSOP 66 Package
1M-22M
1m x 16 memory module
64 x32 dram
K x 1 DRAM
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IAEJE
Abstract: PLDC20G10C R123A HC-49/IAEJE IC 2 5/IAEJE
Text: PLDC20G10B/PLDC20G10 P Y P P C ’C O CMOS Generic 24-Pin Reprogrammable Logic Device Features • Fast — Commercial: tpo = IS ns, to o = 10 ns, ts - 12 ns — Military: tpo = 20 ns, tc o = 15 ns, tg = IS ns • Low power — Ic c max.: 70 mA, commercial
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PLDC20G10B/PLDC20G10
24-Pin
IAEJE
PLDC20G10C
R123A
HC-49/IAEJE
IC 2 5/IAEJE
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20G10B-20
Abstract: 12L10 16L6 18L4 20L10 20L8
Text: r PLDC20G10B/PLDC20G10 CYPRESS Features • Fast — Commercial: tpn = 15 ns, tc o = ID us, tg = 12 ns — Military: tPD = 20 ns, tc o = 15 ns, ts — 15 ns • Low power — Ice max.: 70 mA, commercial — Ic e max.: 100 mA, military • Commercial and m ilitary tem perature
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PLDC20G10B/PLDC20G10
24-Pin
20L10,
12L10,
24-Lead
300-Mil)
PLDC20G10â
CG7C323
20G10B-20
12L10
16L6
18L4
20L10
20L8
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Xr 1075
Abstract: SFNF123 BD 266 S
Text: / 836860 2 SOL ITRON D E VI CE S TOC 02014 INC SFNF123 ' " \ T-39-09 SWITCH MOS 70 tEl S3tatDa 0002014 1 • PACKAGE TO-39 POWER MOS MAXIMUM RATINGS VDS S tg V Power Dissipation 0 Tc«25°C 20 W Drain Current, Clamped Inductive 20 A Voltage, Gate-to-Source
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T-39-09
SFNF123
5M6-24UNF-2A
P06fTKMOF
eA03AT
Xr 1075
SFNF123
BD 266 S
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j 201a
Abstract: No abstract text available
Text: rZZ Ä 7# S G S -T H O M S O N [» ^ s m iO T M O O tg S LM 101 A - L M 201 A LM 301A SINGLE OPERATIO NAL AM PLIFIERS LM101A LM301A LM201A INPUT OFFSET VOLTAGE 0.2 mV 2 mV INPUT BIAS CURRENT 25 nA 70 nA INPUT OFFSET CURRENT 1.5 nA 2 nA SLEW RATE AS INVERTING
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LM101A
LM301A
LM201A
LCC20
LM101A
intern9/12
01A-LM
E88LM101-32
j 201a
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