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    Untitled

    Abstract: No abstract text available
    Text: cP September 1996 Revision 1.0 DATA S H E E T- B1UV641 1/4 -(60/70) TG-S 8MByte (1Mx 64) CMOS EDO DRAM Module -3.3V General Description The EO B1UV641(1/4)-(60/70)TG-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module orga­


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    PDF EOB1UV641 B1UV641 144-pins, MB81V1 1Mx16 144-pin 158x2 0070x2

    Untitled

    Abstract: No abstract text available
    Text: < p August 1996 Revision 1.0 HATA GHFFT - B1UV6412- 67/84/100/125 T-S 8MByte (1Mx64) CMOS Synchronous DRAM Module General Description The SO B1UV6412-(67/84/100/125)T-S is a high performance, 8-megabtye synchronous, dynamic RAM module organized as 1 M


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    PDF SOB1UV6412- 1Mx64) B1UV6412- 144-pin, 11171622A- 1Mx16 125MHz) 100MHz)