RJN1167
Abstract: KTK597TV 2SK3376TT 2SK2219 RJN1163 2SK3376 ktk596 TFSM KTK599TV KTK597E
Text: Outline Name TFSM ULP-4 VSM TVSM ESM USM TO-92M Size[§§] 0.8¡¿0.6¡¿0.38 1.0¡¿0.6¡¿0.37 1.2¡¿0.8¡¿0.5 1.2¡¿0.8¡¿0.32 1.6¡¿0.85¡¿0.7 2.0¡¿1.25¡¿0.9 4.3¡¿3.2¡¿2.4 Type No. High Gain IDSS §¸ Grade Max. Ratings V Supply (V) ISupply(§ )
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O-92M
KTK698TV
KTK697TV
KTK599TV
KTK598TV
KTK597
KTK596
2SK1578
KTK596S
RJN1167
KTK597TV
2SK3376TT
2SK2219
RJN1163
2SK3376
ktk596
TFSM
KTK599TV
KTK597E
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Untitled
Abstract: No abstract text available
Text: Product specification 1PS76SB10 SOD-323 Unit: mm +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 +0.1 1.3-0.1 Features Low forward volatge +0.1 2.6-0.1 1.0max Guard ring protected Very small plastic SMD package. 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25
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1PS76SB10
OD-323
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diode smd marking S0
Abstract: 1PS76SB10 SMD transistor Marking rw TE smd TFSM smd marking LE smd ic marking te smd diode S0
Text: Diodes SMD Type Schottky barrier diode 1PS76SB10 SOD-323 Unit: mm +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 +0.1 1.3-0.1 Features Low forward volatge +0.1 2.6-0.1 1.0max Guard ring protected Very small plastic SMD package. 0.375 +0.05 0.1-0.02 0.475 Absolute Maximum Ratings Ta = 25
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1PS76SB10
OD-323
diode smd marking S0
1PS76SB10
SMD transistor Marking rw
TE smd
TFSM
smd marking LE
smd ic marking te
smd diode S0
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KTA2013F
Abstract: tfsm package TFSM
Text: SEMICONDUCTOR KTA2013F TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E ・Excellent hFE Linearity B : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE : hFE=120~400. 3 K ・Thin Fine Pitch Small Package.
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KTA2013F
KTC4074F.
-100mA,
-10mA
KTA2013F
tfsm package
TFSM
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PDF
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TFSM
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC4074F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E ・Excellent hFE Linearity B : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE : hFE=120~400. 3 K ・Thin Fine Pitch Small Package.
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KTC4074F
KTA2013F.
100mA,
TFSM
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PDF
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KTC4074F
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC4074F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E ・Excellent hFE Linearity B : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE : hFE=120~400. D 3 K ・Thin Fine Pitch Small Package.
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KTC4074F
KTA2013F.
KTC4074F
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tfsm package
Abstract: MBR1645 SBR1645-T254
Text: SEME SBR1645-T254 LAB MECHANICAL DATA Dimensions in mm 13.59 0.535 13.84 (0.545) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 20.07 (0.790) 20.32 (0.800) 3.53 (0.139)
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SBR1645-T254
254METAL
MBR1645
tfsm package
MBR1645
SBR1645-T254
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Untitled
Abstract: No abstract text available
Text: , Lt na. SBR1645-T254 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MECHANICAL DATA Dimensions in mm 13.59 0.535 13.84 (0.545) 3.53(0.139) 3.78(0.149) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 727 (0.050) a S.KS 000 1 2 DUAL SCHOTTKY BARRIER RECTIFIER
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SBR1645-T254
O-254METAL
MBR1645
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TFSM
Abstract: No abstract text available
Text: SEMICONDUCTOR PF1015FSM TECHNICAL DATA EMI Filtering TVS EMI Filtering TVS For Data Line TENTATIVE FEATURES EMI/RFI filtering. ESD Protection to IEC 61000-4-2 Level 4. Low insertion loss. E Good attenuation of high frequency signals. B Low clamping voltage.
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PF1015FSM
TFSM
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Untitled
Abstract: No abstract text available
Text: S EM E SBR1645-T254 LA B MECHANICAL DATA Dimensions in mm 13.59 0.535 13.84 (0.545) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) 20.07 (0.790) 20.32 (0.800) 3.53 (0.139)
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SBR1645-T254
254METAL
MBR1645
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diagram LG LCD TV circuits
Abstract: schematic LG TV lcd backlight inverter schematic LG lcd backlight inverter schematic diagram inverter 12v to 24v 30a lg lcd tv POWER SUPPLY SCHEMATIC lg led tv internal parts block diagram diagram power supply LG 32 in LCD TV circuits KIA78033F regulator KIA78 ic philips lcd tv inverter schematic
Text: LG LCD TV AUTOBAHN BOARD Part List First & Best KEC Products For LCD TV / Monitor http://www.keccorp.com Sales Engineering G 2006. 04. REV 3.31 First & Best KEC Products Line up for LCD TV & MNT IC’s Discrete Transistor G/P Transistor Power Regulator Management
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OD-523
OD-323
OD323-2-1
SC-76)
OD-123FL
OT-723
OT-23
OT-89
diagram LG LCD TV circuits
schematic LG TV lcd backlight inverter
schematic LG lcd backlight inverter
schematic diagram inverter 12v to 24v 30a
lg lcd tv POWER SUPPLY SCHEMATIC
lg led tv internal parts block diagram
diagram power supply LG 32 in LCD TV circuits
KIA78033F
regulator KIA78 ic
philips lcd tv inverter schematic
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PDF
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SS369
Abstract: No abstract text available
Text: 1SS369 TOSHIBA TOSHIBA DIODE 1 SS3 69 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LOW VOLTAGE HIGH SPEED SWITCHING • • • Small Package Low Forward Voltage Low Reverse Current : Vp 3 = 0.54V (TYP.) *T ti = * „ A ÍM A Y 1 0.8 ±0.1 n MAXIMUM RATINGS (Ta = 25°C)
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OCR Scan
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1SS369
961001EAA2'
SS369
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PDF
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1N6641
Abstract: No abstract text available
Text: 1N 6639 • 1N6639 thru 1N6641 AVAILABLE IN JAN, JANTX, JANTXV, AND JANS PER MIL-PRF-19500/609 1 N 6640 • SWITCHING DIODES • NON-CAVITY GLASS PACKAGE 1N6641 • METALLURGY ALLY BONDED MAXIMUM RATINGS 0.056/0.075 & 1.42/1.« Operating Temperature: -65“C to +175°C
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OCR Scan
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1N6639
1N6641
MIL-PRF-19500/609
1N6641
-100Q
IN6639
IN6641
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PDF
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Untitled
Abstract: No abstract text available
Text: CMBD4150 SILICON PLANAR EPITAXIAL HIGH SPEED DIODE Marking CMBD4150 * D18 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm _ 3.0 2.8 0.48 ÏÏ3S 0.70 0.50 3 Pin configuration 1 = ANODE 2.6 1.4 1.2 2.4 2 = NC J 3 = CATHODE IM -14 “ W .002 1.02 _ 5.89 0.60 2.00
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OCR Scan
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CMBD4150
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 3000HXD22 TOSHIBA ALLOY-FREE RECTIFIER 3 n n n n Y n 3 ? RECTIFIER APPLICATIONS Repetitive Peak Reverse Voltage : Vr r m —5000V • • • T V , , A T7-X — Q rtH A A -r ^ v ; —- - - - - Flat Package MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING
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OCR Scan
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3000HXD22
--5000V
1300g
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SS388 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 s S 3 88 HIGH SPEED SWITCHING APPLICATION U nit in mm • Small Package • Low Forward Voltage : VF 3 = 0.54V (Typ.) • Low Reverse Current : I r = 5/./Á (Typ.) MAXIMUM RATINGS (Ta = 25°C)
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OCR Scan
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1SS388
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PDF
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G30100C
Abstract: No abstract text available
Text: m RHRG3070CC, RHRG3080CC, RHRG3090CC, RHRG30100CC HARRIS 30A, 700V - 1000V Hyperfast Dual Diodes April 1995 Features Package JEDEC STYLE TO-247 • Hyperfast with Soft R eco very.<65ns • Operating Temperature . . . +175 C
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OCR Scan
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RHRG3070CC,
RHRG3080CC,
RHRG3090CC,
RHRG30100CC
O-247
TA49064)
G30100C
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PDF
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TFSM
Abstract: 1ss3 1SS352
Text: 1SS352 TOSHIBA 1 SS352 T O S H IB A D IO D E SILICO N EPITA X IA L PLA N A R TYPE Unit in mm ULTRA H IG H SPEED S W IT C H IN G A P P L IC A T IO N . • • • • Small Package Low Forward Voltage VF 3 = 0.98V (Typ.) Fast Reverse Recovery Time trr—l-6ns (Typ.)
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OCR Scan
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1SS352
20X20mm,
961001EAA2'
TFSM
1ss3
1SS352
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PDF
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KRC158F
Abstract: parts equivalent KRC157F
Text: SEMICONDUCTOR KRC157F-KRC159F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SW IT C H IN G APPLICATION. INTERFA CE C IRCUIT A N D DRIVER CIR CUIT APPLICATION. FE A T U R E S • With Built-in Bias Resistors. • Simplify Circuit Design. • Reduce a Quantity of Parts and Manufacturing Process.
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OCR Scan
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KRC157F-KRC159F
KRC157F
KRC158F
KRC159F
KRC157F
KRC158F
parts equivalent
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PDF
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ui02
Abstract: mig10Q vero GK 60
Text: TOSHIBA MIG10Q805H TOSHIBA INTEGRATED IGBT MODULE SILICON N CHANNEL IGBT MIG10Q805H HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • Integrates Inverter, Converter Power Circuits in One Package. • Output Inverter Stage : 30 10A/1200V IGBT
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OCR Scan
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MIG10Q805H
0A/1200V
/l600V
961001EAA1
ui02
mig10Q
vero GK 60
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PDF
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Untitled
Abstract: No abstract text available
Text: SEM ICONDUCTOR KTA2013F TECHNI CAL DATA EPITAX IAL PLANAR PNP TR A N SIST O R G E N E R A L PUR PO SE A PPLICATION. SW ITC H IN G APPLICATIO N. FEA T U RE S • Excellent h FE Linearity : h FE 0.1m A /hFE(2mA)=0.95(Typ.). • High h FE : h FE—l20~400. • Complementary to KTC4074F.
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OCR Scan
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KTC4074F.
KTA2013F
-10mA
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PDF
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Untitled
Abstract: No abstract text available
Text: ADE-208-156B<Z HRW26F Silicon Schottky Barrier Diode for High Frequency Rectifying HITACHI Features Rev. 2 Nov. 1994 Pin Arrangement • Low forward voltage drop. VF=0.55V max) • High reverse voltage. (VR=40V max) • Full molded fin enables easy insulation from
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OCR Scan
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HRW26F
HRW26F
T0220FM
O-220FM
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PDF
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FI 2453
Abstract: Daico Industries DS0049
Text: DAICÔ INDUSTRIES 2ÔE INC D >• 0001422 . . S HDAI . J-5 M 1 NC GND NO CONTCONT NO GND NC DS0049 SP2T DUAL SWITCH • 10-400 MHz • 5 mA, +5 VDC . FAST SWITCHING SPEED BY BEA D OF CONTRASTING COLOR OPERATING CHARACTERISTICS PARAMETER CURRENT DRAIN
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OCR Scan
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0D01422
T-51-11
DS0049
FI 2453
Daico Industries
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PDF
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Untitled
Abstract: No abstract text available
Text: DA IC O I N D U S T R I E S INC 2 ^ 04^20 . >• 0001422 . ._ . . . S _•. . DAI 3BE D r-5 1 -n NC A GND NO CONTCONT NO GND A GND B NC B DS0049 SP2T DUAL SWITCH • 10-400 MHz • 5 mA, +5 VDC • FAST SWITCHING SPEED CONTRASTING COLOR OPERATINGCHARACTERISTICS
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OCR Scan
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DS0049
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PDF
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