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    1SS3 Price and Stock

    MOSLEADER 1SS355-ML

    80V 0.1A SOD323
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1SS355-ML Reel 300,000 200
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    • 1000 $0.04571
    • 10000 $0.03305
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    Toshiba America Electronic Components 1SS362TE85LF

    DIODE ARRAY GP 80V 80MA SSM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1SS362TE85LF Reel 60,000 3,000
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    • 10000 $0.0275
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    1SS362TE85LF Cut Tape 1,554 1
    • 1 $0.28
    • 10 $0.194
    • 100 $0.0949
    • 1000 $0.05498
    • 10000 $0.05498
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    Mouser Electronics 1SS362TE85LF 68,116
    • 1 $0.28
    • 10 $0.194
    • 100 $0.079
    • 1000 $0.055
    • 10000 $0.031
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    Toshiba America Electronic Components 1SS321,LF

    DIODE SCHOTTKY 10V 50MA S-MINI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1SS321,LF Reel 36,000 3,000
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    1SS321,LF Cut Tape 4,408 1
    • 1 $0.22
    • 10 $0.154
    • 100 $0.075
    • 1000 $0.04345
    • 10000 $0.04345
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    TTI 1SS321,LF Reel 3,000
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    • 10000 $0.03
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    Toshiba America Electronic Components 1SS319(TE85L,F)

    DIODE ARR SCHOTT 40V 100MA SC61B
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1SS319(TE85L,F) Reel 12,000 3,000
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    • 10000 $0.05645
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    1SS319(TE85L,F) Cut Tape 4,262 1
    • 1 $0.38
    • 10 $0.265
    • 100 $0.1341
    • 1000 $0.08114
    • 10000 $0.08114
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    Chip1Stop 1SS319(TE85L,F) Cut Tape 29,349
    • 1 -
    • 10 $0.178
    • 100 $0.164
    • 1000 $0.14
    • 10000 $0.104
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    1SS319(TE85L,F) Cut Tape 8,875
    • 1 -
    • 10 $0.178
    • 100 $0.104
    • 1000 $0.104
    • 10000 $0.104
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    Diodes Incorporated 1SS361LPH4-7B

    DIODE GEN PURP 80V 100MA 2DFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 1SS361LPH4-7B Cut Tape 9,716 1
    • 1 $0.36
    • 10 $0.245
    • 100 $0.1194
    • 1000 $0.06922
    • 10000 $0.05565
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    Avnet Americas 1SS361LPH4-7B Reel 10,000 8 Weeks 10,000
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    • 10000 $0.0337
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    New Advantage Corporation 1SS361LPH4-7B 10,000 1
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    • 10000 $0.0496
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    Find more 1SS3 price and stock on Findchips.com

    1SS3 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Type PDF
    1SS30 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS30 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS300 Kexin Ultra High Speed Switching Application Original PDF
    1SS300 Toshiba DIODE ULTRA FAST RECOVERY RECTIFIER 85V 0.1A 3(1-2P1A) Original PDF
    1SS300 Toshiba Diode - Silicon Epitaxial Planar Type Original PDF
    1SS300 Toshiba Switching Diodes; Surface Mount Type: Y; Package: USM; XJE016 JEITA: SC-70; Number of Pins: 3; Features: high-speed switching; Internal connection: 2 in 1; Comments: Please ask for the nearest Toshiba distributor about the production works.; Reverse Voltage, max (V): (max 80) Original PDF
    1SS300 TY Semiconductor Ultra High Speed Switching Application - SOT-323 Original PDF
    1SS300 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1SS300 Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    1SS300 Toshiba DIODE (ULTRA HIGH SPEED SWTHCING PPLICATION) Scan PDF
    1SS300 Toshiba DIODE Scan PDF
    1SS300,LF Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, SWITCHING DIODE 80V CA 3 USM Original PDF
    1SS300TE85L Toshiba 1SS300 - DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS300TE85L Toshiba DIODE ULTRA FAST RECOVERY RECTIFIER 85V 0.1A 3(1-2P1A) T/R Original PDF
    1SS300TE85R Toshiba 1SS300 - DIODE 0.1 A, 2 ELEMENT, SILICON, SIGNAL DIODE, Signal Diode Original PDF
    1SS301 Kexin Ultra High Speed Switching Application Original PDF
    1SS301 Toshiba Japanese - Diodes Original PDF
    1SS301 Toshiba Silicon diode for ultra high speed switching applications Original PDF
    1SS301 TY Semiconductor Ultra High Speed Switching Application - SOT-323 Original PDF
    1SS301 Xin Semiconductor SUPER HIGH SPEED SWITCHING DIODE SPECIAL DESIGN FOR PROTECTING SOLAR BATTERY Original PDF
    ...

    1SS3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Diode marking TY

    Abstract: IR switch smd diode marking um marking ty TY SMD diode 1SS314
    Text: Diodes SMD Type VHF TUNER BAND SWITCH APPLICATIONS 1SS314 SOD-323 +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Features Unit: mm +0.1 1.3-0.1 Small packag Small Total capacitance: CT = 1.2pF Max. Low series resistance: rs = 0.5 +0.1 2.6-0.1 1.0max (Typ.) 0.375


    Original     		PDF 1SS314 OD-323 Diode marking TY IR switch smd diode marking um marking ty TY SMD diode 1SS314

    1SS393

    Abstract: No abstract text available
    Text: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS393 Features Low forward voltage:VF 3 = 0.54 V(Typ.) Low reverse current:IR = 5 A A bsolute M axim um R atings T a = 25 P aram eter M axim um (peak) reverse voltage S ym bol R ating U nit V RM 45 V R everse voltage


    Original     		PDF 1SS393 1SS393

    1SS379

    Abstract: 0-110A
    Text: Diodes SMD Type Silicon Epitaxial Planar Diode 1SS379 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 Small total capacitance: CT=3.0pF Typ. 1 0.55 Low reverse current: IR=0.1nA(Typ.) +0.1 1.3-0.1 +0.1 2.4-0.1 Low forward voltage :VF=1.0V(Typ.)


    Original     		PDF 1SS379 OT-23 100mA 1SS379 0-110A

    smd diode a6

    Abstract: smd diode marking a6 DIODE A6 marking A6 A CLIPPER CIRCUIT APPLICATIONS 1SS304 smd transistor A6 A6 DIODE SMD a6 Transistor
    Text: Diodes SMD Type HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE 1SS304 Features Low capacitance: Ct = 1.1 pF TYP. High speed switching: trr = 3.0 ns MAX. Wide applications including switching, limitter, clipper. Double diode configuration assures economical use.


    Original     		PDF 1SS304 smd diode a6 smd diode marking a6 DIODE A6 marking A6 A CLIPPER CIRCUIT APPLICATIONS 1SS304 smd transistor A6 A6 DIODE SMD a6 Transistor

    Marking s3

    Abstract: smd transistor s3 1SS388
    Text: Diodes SMD Type HIGH SPEED SWITCHING APPLICATION 1SS388 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 Features +0.05 0.8-0.05 Small Package + +0.1 0.6-0.1 - Low Forward Voltage :VF 3 = 0.54V(TYP.) Low Reverse Current :IR = 5 Ìa(TYP.) +0.1 1.6-0.1 +0.05 0.1-0.02


    Original     		PDF 1SS388 OD-523 07max 77max Marking s3 smd transistor s3 1SS388

    Untitled

    Abstract: No abstract text available
    Text: Diodes High–voltage band switching diode 1SS376 FApplications High voltage switching FExternal dimensions Units: mm FFeatures 1)ăHigh reliability. 2)ăSmall surface mounting type. (UMD2) 3)ăPeak reverse voltage guaranteed at 300V with this size. FConstruction


    Original     		PDF 1SS376

    Untitled

    Abstract: No abstract text available
    Text: 1SS362FV TOSHIBA Diode Silicon Epitaxial Planar Type 1SS362FV Ultra-High-Speed Switching Applications Unit: mm z Small package 0.22±0.05 z Fast reverse recovery time: trr = 1.6 ns typ. Symbol Rating Unit VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current


    Original     		PDF 1SS362FV 05mitation,

    Untitled

    Abstract: No abstract text available
    Text: 1SS361FV TOSHIBA Diode Silicon Epitaxial Planar Type 1SS361FV Ultra-High-Speed Switching Applications 0.22±0.05 Unit: mm Maximum peak reverse voltage Symbol Rating Unit VRM 85 V 2 3 0.13±0.05 Characteristic 1 0.5±0.05 Absolute Maximum Ratings (Ta = 25°C)


    Original     		PDF 1SS361FV

    1SS32

    Abstract: No abstract text available
    Text: 1SS322 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS322 Unit: mm Low Voltage High Speed Switching z Low forward voltage : VF 3 = 0.54V (typ.) z Low reverse current : IR = 5 A (max) z Small package : SC−70 Absolute Maximum Ratings (Ta = 25°C) Characteristic


    Original     		PDF 1SS322 SC-70 1SS32

    smd diode UM

    Abstract: smd diode marking um 1SS352 marking Um diode smd diode UM 85 smd diode UM 16
    Text: Diodes SMD Type ULTRA HIGH SPEED SWITCHING APPLICATION DIODE 1SS352 SOD-323 +0.1 1.3-0.1 Features +0.05 0.85-0.05 +0.05 0.3-0.05 +0.1 1.7-0.1 Unit: mm Small Package Low forward voltage :VF 3 = 0.98 (Typ) :trr = 1.6ns (Typ) Small total capacitance :CT = 0.5 pF(Typ)


    Original     		PDF 1SS352 OD-323 smd diode UM smd diode marking um 1SS352 marking Um diode smd diode UM 85 smd diode UM 16

    k9 diode

    Abstract: smd transistor marking 26 1SS348
    Text: Diodes SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS348 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage: VF 3 = 0.56V(Typ). 0.55 Small package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1


    Original     		PDF 1SS348 OT-23 k9 diode smd transistor marking 26 1SS348

    Diodes smd marking f5 reverse voltage

    Abstract: MA1060 marking f5 SOT-23 F5 Diodes smd f5 1ss370 smd marking f5 1SS370
    Text: Diodes SMD Type Silicon Epitaxial Planar Type 1SS370 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 :VF 3 = 0.9 V(Typ) :trr = 60ns (MAX.) :CT = 1.5 pF(Typ) 1 0.55 Small total capacitance +0.1 1.3-0.1 Fast reverse recovery time +0.1 2.4-0.1 Low forward voltage


    Original     		PDF 1SS370 OT-23 Diodes smd marking f5 reverse voltage MA1060 marking f5 SOT-23 F5 Diodes smd f5 1ss370 smd marking f5 1SS370

    1SS377

    Abstract: marking O9
    Text: Diodes SMD Type HIGH SPEED SWITCHING DOIDE 1SS377 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 Low forward voltage :VR =0.23V Typ . @IF = 5mA 0.55 Small package +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1


    Original     		PDF 1SS377 OT-23 Te200* 1SS377 marking O9

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1SS315 TOSHIBA DIODE UHF BAND M IXER APPLICATIONS. 1 SS31 5 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm +0.2 .1 .2 5 -0 . il Nh ÖÖ + 1 M A X IM U M RATINGS Ta = 25°C CHARACTERISTIC Maximum (Peak) Reverse Voltage Forward Current Junction Temperature


    OCR Scan     		PDF 1SS315

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1SS384 TO SHIBA DIODE 1 SS384 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING 2.1 ± 0.1 j 1.25± O.lj • Small Package • Composed of 2 independent diodes. • Low Forward Voltage : Vp 2 = 0.23V (TYP.) o o


    OCR Scan     		PDF 1SS384 SS384

    SS302

    Abstract: No abstract text available
    Text: 1SS302 TO SHIBA TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1 SS302 Unit in mm ULTRA HIGH SPEED SW ITCHING APPLICATIONS. • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance 2.1 ± 0.1 : SC-70 : Vp 3 = 0.90V (Typ.)


    OCR Scan     		PDF 1SS302 SS302 SC-70 SS302

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 1SS344 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS344 ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm + 0.5 2.5-0.3 • Low Forward Voltage : V p 3 = 0.50V (Typ.) • Fast Reverse Recovery Time : trr = 20ns (Typ.) • High Average Forward Current : I o = 0.5A (Max.)


    OCR Scan     		PDF 1SS344 961001EAA2'

    Untitled

    Abstract: No abstract text available
    Text: 1SS336 T O SH IB A 1SS336 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. + 0 .5 2 .5 - 0 . 3 : SC-59 : Vp 3 = 0.84V (Typ.) : trr = 7ns (Typ.) : Or = 7pF (Typ.) + 0 .2 5 1 .5 - 0 . 1 5 , 0 .9 5 Small Package


    OCR Scan     		PDF 1SS336 SC-59

    Untitled

    Abstract: No abstract text available
    Text: 1SS388 TO SHIBA TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION • • • SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS388 Small Package Low Forward Voltage Low Reverse Current Unit in mm : VF 3 = 0.54V (Typ.) : Ir = 5//A (Typ.) M A X IM U M RATINGS (Ta = 25°C)


    OCR Scan     		PDF 1SS388

    1SS321

    Abstract: No abstract text available
    Text: 1SS321 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LOW VOLTAGE HIGH SPEED SWITCHING. Low Forward Voltage Unit in mm VF=0.42V Typ. Low Reverse Current lR=500nA(Max.) Small Package SOT-23MOD MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Maximum(Peak Reverse Voltage


    OCR Scan     		PDF 1SS321 500nA OT-23MOD 1SS321

    1SS300

    Abstract: No abstract text available
    Text: 1SS300 SILICON EPITAXIAL PLANAR T Y P E ULTRA HIGH SPEED SWITCHING APPLICATION. Small Package Unit in mm 21 ±0.1 SC-70 Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance 1.25 ± 0.1 VF=0.92V Typ. t r r = l . 6ns(T yp.) Ct = 2 . 2 p F ( T y p . )


    OCR Scan     		PDF 1SS300 SC-70 100mA 1SS300

    1SS348

    Abstract: CT marking
    Text: 1SS348 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE LOW VOLTAGE HIGH SPEED SWITCHING Unit in mra . Low Forward Voltage : V f =0.56V Typ. . Low Reverse Current : lR=5/JA(Max.) . Small Package MAXIMUM RATINGS : SC-59 (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT


    OCR Scan     		PDF 1SS348 SC-59 100mA 1SS348 CT marking

    "UHF DETECTOR"

    Abstract: No abstract text available
    Text: Ordering number:EN4690 _ 1SS375 No.4690 Schottky B arrier Diode SANYO i VHF, UHF detector and Mixer Applications F e a tu re s •Series connection of 2 elem ents in a very sm all-sized package facilitates high-density m ounting and perm its lSS375-applied equipm ent to be made sm aller.


    OCR Scan     		PDF EN4690 1SS375 lSS375-applied "UHF DETECTOR"

    Untitled

    Abstract: No abstract text available
    Text: 1SS368 T O SH IB A TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS368 ULTRA HIGH SPEED SWITCHING APPLICATION • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance Vf 3 - 0.98V (TYP.) trr= 1.6ns (TYP.) CT = 0.5pF (TYP.)


    OCR Scan     		PDF 1SS368