E3P102
Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
Text: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001 SCILLC, 2001 Previous Edition 1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.
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DL135/D
Apr-2001
r14525
DLD601
E3P102
T2-955V
e6n02
t9n10e
DL135
1086v
l1n06c
24 v DC relay 34.51.7
d3n03
20n06hl
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N05E
Abstract: 2N02E AN569 MMDF1N05E
Text: Order this data sheet by MMDF1 N05WD MOTOROLA I~~M]cQ~DucToR TECHNICAL DATA Medium Power Surface Mount Products MMDFI N05E Dual TMOS Field Effect ~ansistors Motorola Preferred Device *1 , ~?,. . . . ~~,: 1. ,.,.,. ,$:?+3 , .$~) ,. ;$, ,\,.:?, This new series of dual TMOS MOSFETS consists of an advanced series of two
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N05WD
MK145BP,
2PHX33546F-O
N05E
2N02E
AN569
MMDF1N05E
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2N02
Abstract: ZXM62N02E6 ZXM62N02E6TA ZXM62N02E6TC D44 SOT23-6
Text: ZXM62N02E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=20V; RDS(ON)= 0.1⍀; ID=3.2A DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching
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ZXM62N02E6
OT23-6
OT23-6
ZXM62N02E6T00
2N02
ZXM62N02E6
ZXM62N02E6TA
ZXM62N02E6TC
D44 SOT23-6
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Untitled
Abstract: No abstract text available
Text: ZXM62N02E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=20V; RDS(ON)= 0.1⍀; ID=3.2A DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching
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ZXM62N02E6
OT23-6
OT23-6
ZXM62N02E6TA
ZXM62N02E6TC
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2N02
Abstract: ZXM62N02E6 ZXM62N02E6TA ZXM62N02E6TC
Text: ZXM62N02E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS=20V; RDS(ON)= 0.1⍀; ID=3.2A DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching
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ZXM62N02E6
OT23-6
OT23-6
ZXM62N02E6T)
2N02
ZXM62N02E6
ZXM62N02E6TA
ZXM62N02E6TC
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2N02
Abstract: ZXM62N02E6TC ZXM62N02E6 ZXM62N02E6TA TF 2N02 DSA003663
Text: ZXM62N02E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS DSS=20V; RDS(ON)= 0.1⍀ ID=3.2A DESCRIPTION This new generation of high density MOSFETs from Zetex utilise a unique structure that combines the benefits of low on-resistance with fast switching
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ZXM62N02E6
OT23-6
OT23-6
ZXM62N02E6TA
D-81673
2N02
ZXM62N02E6TC
ZXM62N02E6
ZXM62N02E6TA
TF 2N02
DSA003663
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2N02l
Abstract: 2N02 2N3904 AN569 MMFT2N02EL MMFT2N02ELT1 MMFT2N02ELT3 SMD310
Text: MOTOROLA Order this document by MMFT2N02EL/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT2N02EL Motorola Preferred Device SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET
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MMFT2N02EL/D
MMFT2N02EL
MMFT2N02EL/D*
2N02l
2N02
2N3904
AN569
MMFT2N02EL
MMFT2N02ELT1
MMFT2N02ELT3
SMD310
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Power logic MOSFET SOT-223
Abstract: 2N02l 1000 watts ups circuit diagram dc marking code dpak sot-223 code marking 2N3904 AN569 MMFT2N02EL MMFT2N02ELT1 SMD310
Text: MMFT2N02EL Preferred Device Power MOSFET 2 Amps, 20 Volts N−Channel SOT−223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This device is also designed with a low threshold voltage so it is fully enhanced with 5 Volts. This new
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MMFT2N02EL
OT-223
OT-223
MMFT2N02EL/D
Power logic MOSFET SOT-223
2N02l
1000 watts ups circuit diagram
dc marking code dpak
sot-223 code marking
2N3904
AN569
MMFT2N02EL
MMFT2N02ELT1
SMD310
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2N02L
Abstract: MMFT2N02EL MMFT2N02ELT1 AN569
Text: MMFT2N02EL Preferred Device Power MOSFET 2 Amps, 20 Volts N–Channel SOT–223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This device is also designed with a low threshold voltage so it is fully enhanced with 5 Volts. This new
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MMFT2N02EL
r14525
MMFT2N02EL/D
2N02L
MMFT2N02EL
MMFT2N02ELT1
AN569
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Untitled
Abstract: No abstract text available
Text: [AK5730] AK5730 4-Channel Differential Audio ADC for Line & Mic Inputs GENERAL DESCRIPTION The AK5730 is a 4-channel ADC with SAR ADC for DC measurement. The ADC supports Line and Microphone inputs, making it ideal for microphone array applications. TDM audio format makes it easy to
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AK5730]
AK5730
AK5730
65Vrms,
100dB
48kHz
MS1577-E-01
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marking code J1 sot23
Abstract: No abstract text available
Text: MMFT2N02EL Preferred Device Power MOSFET 2 Amps, 20 Volts N–Channel SOT–223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This device is also designed with a low threshold voltage so it is fully enhanced with 5 Volts. This new
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MMFT2N02EL
marking code J1 sot23
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1n05
Abstract: AK5730 1N04 4N06 1n03 3N04 thb12 THB01 1N07 3n03
Text: CONFIDENTIAL = Preliminary = [AK5730] AK5730 4-Channel Differential Audio ADC for Line & Mic Inputs GENERAL DESCRIPTION The AK5730 features a 4-channel Differential ADC with SAR ADC for DC measurement. Differential ADC supports Line and Microphone-input, making it ideal for microphone array applications. TDM audio format
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AK5730]
AK5730
AK5730
100dB
1n05
1N04
4N06
1n03
3N04
thb12
THB01
1N07
3n03
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THB11
Abstract: 4N06
Text: [AK5730] AK5730 4-Channel Differential Audio ADC for Line & Mic Inputs GENERAL DESCRIPTION The AK5730 is a 4-channel ADC with SAR ADC for DC measurement. The ADC supports Line and Microphone inputs, making it ideal for microphone array applications. TDM audio format makes it easy to
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AK5730]
AK5730
AK5730
65Vrms,
100dB
48kHz
MS1577-E-02
THB11
4N06
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THB11
Abstract: No abstract text available
Text: [AK5730] AK5730 4-Channel Differential Audio ADC for Line & Mic Inputs GENERAL DESCRIPTION The AK5730 features a 4-channel Differential ADC with SAR ADC for DC measurement. Differential ADC supports Line and Microphone-input, making it ideal for microphone array applications. TDM audio format
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AK5730]
AK5730
AK5730
65Vrms,
100dB
THB11
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PD70F35
Abstract: R01US0001EJ v850E2M architecture Users Manual SUS 303 EZ CG 555 timer guard ring TT 2188 v850e2m NAS11 TAPA2 B32R
Text: User Manual V850E2/MN4 32 RENESAS MCU V850E2/Mx4 microcontrollers PD70F3510 μPD70F3512 μPD70F3514 μPD70F3515 All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by
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V850E2/MN4
V850E2/Mx4
PD70F3510
PD70F3512
PD70F3514
PD70F3515
R01UH0011EJ0100,
R01UH0011EJ0100
PD70F35
R01US0001EJ
v850E2M architecture Users Manual
SUS 303 EZ CG
555 timer guard ring
TT 2188
v850e2m
NAS11
TAPA2
B32R
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V850E2M 32-bit Microcontroller Core Architecture
Abstract: v850E2M architecture Users Manual uPD70F35
Text: User Manual V850E2/MN4 User’s Manual: Hardware 32 RENESAS MCU V850E2/Mx4 microcontrollers PD70F3510 μPD70F3512 μPD70F3514 μPD70F3515 All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by
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V850E2/MN4
V850E2/Mx4
PD70F3510
PD70F3512
PD70F3514
PD70F3515
R01UH0011EJ0300,
R01UH0011EJ0300
V850E2M 32-bit Microcontroller Core Architecture
v850E2M architecture Users Manual
uPD70F35
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V850E2
Abstract: TSG20 v850E2M architecture Users Manual v850e2/dx4
Text: User’s Manual 32 V850E2/Px4 User’s Manual: Hardware Renesas microcomputers V850 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by
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V850E2/Px4
R01UH0098EJ0100
V850E2
TSG20
v850E2M architecture Users Manual
v850e2/dx4
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2N02E
Abstract: 2N02
Text: INFORMATION FOR USING THE SO-8 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS between the board and the package. With the correct pad geometry, the packages will self-align when subjected to a solder reflow process. Surface mount board layout is a critical portion of the total
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MMDF2N02E
2N02E
2N02
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92152
Abstract: 2N02L
Text: Order this data sheet by MMFT2N02ELT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancem ent Mode Silicon G ate TMOS E-FET SOT-223 for Surface Mount M MFT2N02ELT1 Motorola Preferred Device This advanced E-FET is a TMOS Medium Power MOSFET designed
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MMFT2N02ELT1/D
OT-223
2PHX33463F-0
92152
2N02L
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wiring diagram audio amplifier ic 6283
Abstract: germanium Transistor Shortform Datasheet & Cross References halbleiter index transistor 2N5160 MOTOROLA transistor ITT 2907 1N5159 2N 5574 inverter welder 4 schematic diagrams de ic lg 8838
Text: THC SEMICONDUCTOR DATA LIBRARY SECOND EDITION VOLUME H prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the purchaser of semiconductor
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4L3052
4L3056
wiring diagram audio amplifier ic 6283
germanium
Transistor Shortform Datasheet & Cross References
halbleiter index transistor
2N5160 MOTOROLA
transistor ITT 2907
1N5159
2N 5574
inverter welder 4 schematic
diagrams de ic lg 8838
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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N1702
Abstract: 2N277 2SA63 2N390A L204A 2N408 TFK 940 OC59 2N374 2n1922
Text: $1.50 Cat. No. SSH-4 TRANSISTOR SUBSTITUTION HANDBOOK by The H ow ard W . Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York FIRST EDITION FIRST PR IN T IN G — MARCH, 1961 SECOND PR IN T IN G — MARCH, 1961
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2N34A
2N43A
2N44A
2N59A
2N59B
2N59C
2N60A
2N60B
2N60C
2N61A
N1702
2N277
2SA63
2N390A
L204A
2N408
TFK 940
OC59
2N374
2n1922
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