thermal-cutoff
Abstract: Fuse 250V 15A K15B-103 K15B-113 K15B-116 K15B-121 K15B-128 K15B-139 250v 15A thermal thermal cutoff fuse
Text: Type K15B Thermal Cutoff Temperature rated Fuse 15A Axial Leaded www.optifuse.com (800) 621-0326 Ratings: Ampere Rating: 15A Axial Leaded Voltage Rating: 250V AC Agency Standards and Listings: Part Number K15B-077 K15B-087 K15B-094 K15B-099 K15B-103 K15B-113
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K15B-077
K15B-087
K15B-094
K15B-099
K15B-103
K15B-113
K15B-116
K15B-121
K15B-128
K15B-139
thermal-cutoff
Fuse 250V 15A
K15B-103
K15B-113
K15B-116
K15B-121
K15B-128
K15B-139
250v 15A thermal
thermal cutoff fuse
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tf 216 10a 250v
Abstract: DYE*TCO DF184S ISO 8015 tolerance DYE DF84S ISO 8015 tf 115 250v 15a DF240S 250V 10A TF 106 thermoresistor
Text: RoHS Highly Reliable Safety Device THERMAL LINKS DONG-YANG ELECTRONICS CO., LTD. The ultimate one-shot temperature safety device. Thermal links are designed to provide upper limit temperature protection of all electric and electronic products, keeping the products functioning properly
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TJ142D
TJ152D
TJ78D
TJ99D
tf 216 10a 250v
DYE*TCO
DF184S
ISO 8015 tolerance
DYE DF84S
ISO 8015
tf 115 250v 15a
DF240S
250V 10A TF 106
thermoresistor
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Untitled
Abstract: No abstract text available
Text: Description: L50 thermal cut-off/fuse with plastic housing used in household appliances, electronic appliances, fan heaters, transformers, automotive industry. Small compact design and dust proof construction. Rating: 250V 15A Max. 184°C limitation on plastic housing
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317-1569-ND
317-1568-ND
317-1567-ND
317-1566-ND
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 15N25 Preliminary Power MOSFET 15A, 250V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N25 is an N-channel enhancement MOSFET using UTC’s advanced technology to provide the customers with perfect RDS ON , high switching speed, high current capacity and low gate
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15N25
15N25
15N25L-TF1-T
15N25G-TF1-T
QW-R502-994
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FK10KM-9
Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET FK10KM-9 HIGH-SPEED SWITCHING USE FK10KM-9 OUTLINE DRAWING Dimensions in mm 3 ± 0.3 6.5 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 3.6 ± 0.3 14 ± 0.5 15 ± 0.3 10 ± 0.3 1.1 ± 0.2 1.1 ± 0.2 0.75 ± 0.15 w 2.6 ± 0.2 1 2 3 ¡VDSS . 450V
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FK10KM-9
150ns
FK10KM-9
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FK10VS-9
Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET FK10VS-9 HIGH-SPEED SWITCHING USE FK10VS-9 OUTLINE DRAWING r Dimensions in mm 4.5 1.3 +0.3 –0 1.5 3.0 +0.3 –0.5 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 1.5MAX. 10.5MAX. 1 5 0.5 q w e wr ¡VDSS . 450V
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FK10VS-9
150ns
O-220S
FK10VS-9
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FK10SM-9
Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET FK10SM-9 HIGH-SPEED SWITCHING USE FK10SM-9 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 5.0 r 4 2 20.0 φ 3.2 2 19.5MIN. 4.4 1.0 q w 5.45 e 5.45 0.6 2.8 4 wr ¡VDSS . 450V
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FK10SM-9
150ns
FK10SM-9
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SEFUSE SF240E
Abstract: SEFUSE SF214E SEFUSE SEFUSE SF129E SEFUSE SF226e SF240E SF119E SEFUSE SF214E sefuse sf 91e SF139Y
Text: SEFUSE TM THERMAL CUTOFF 8th Edition Cutaway View of SEFUSETM SF Type SF Type SEFUSE TM Contents Introduction . 4 Features . 4
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EM0060EJ8V1SG00
SEFUSE SF240E
SEFUSE SF214E
SEFUSE
SEFUSE SF129E
SEFUSE SF226e
SF240E
SF119E SEFUSE
SF214E
sefuse sf 91e
SF139Y
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NPN Transistor 10A 400V
Abstract: MJ13091 dc motor specification MJ13090
Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors MJ13090/13091 DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO SUS = 400V(Min)—MJ13090 = 450V(Min)—MJ13091 ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in
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MJ13090/13091
--MJ13090
--MJ13091
MJ13090
MJ13091
NPN Transistor 10A 400V
MJ13091
dc motor specification
MJ13090
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FK10UM-9
Abstract: No abstract text available
Text: MITSUBISHI Nch POWER MOSFET FK10UM-9 HIGH-SPEED SWITCHING USE FK10UM-9 OUTLINE DRAWING Dimensions in mm 4.5 10.5MAX. 1.3 16 7.0 3.2 r 1.0 3.8MAX. 0.8 2.54 0.5 2.54 2.6 4.5MAX. 12.5MIN. φ 3.6 q w e wr ¡VDSS . 450V
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FK10UM-9
150ns
O-220
FK10UM-9
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AN1001
Abstract: IRFBA22N50A 4.5V TO 100V INPUT REGULATOR
Text: PD-91886C IRFBA22N50A SMPS MOSFET Applications l Switch Mode Power Supply SMPS l Uninterruptible Power Supply l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
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PD-91886C
IRFBA22N50A
AN1001)
Super-220
O-273AA)
Super-220
AN1001
IRFBA22N50A
4.5V TO 100V INPUT REGULATOR
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FK10UM-9
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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FK10SM-9
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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IRFPS37N50A
Abstract: No abstract text available
Text: PD- 95141 IRFPS40N50LPbF SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS on typ. Trr typ. ID • Telecom and Server Power Supplies 500V 170ns 46A 0.087Ω • Uninterruptible Power Supplies • Motor Control applications
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IRFPS40N50LPbF
170ns
Super-247TM
IRFPS37N50A
IRFPS37N50A
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250A
Abstract: 035H IRFPE30
Text: PD - 95662 IRFP17N50LPbF SMPS MOSFET HEXFET Power MOSFET Applications • Zero Voltage Switching SMPS VDSS RDS on typ. Trr typ. ID • Telecom and Server Power Supplies • Uninterruptible Power Supplies 0.28Ω 500V 170ns 16A • Motor Control applications
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IRFP17N50LPbF
170ns
O-247AC
IRFPE30
250A
035H
IRFPE30
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IRF 930
Abstract: 24V 10A SMPS IRF Power MOSFET code marking AN1001 EIA-541 IRF7101 MS-012AA
Text: PD- 95307 IRF7453PbF SMPS MOSFET HEXFET Power MOSFET Applications High frequency DC-DC converters l Lead-Free VDSS l Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design See
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IRF7453PbF
AN1001)
EIA-481
EIA-541.
IRF 930
24V 10A SMPS
IRF Power MOSFET code marking
AN1001
EIA-541
IRF7101
MS-012AA
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D7ST4013
Abstract: amperes D7ST4010 D7ST401310 D7ST4015 D7ST4510 D7ST4515 D7ST5010 130Amp IB215
Text: Tfl DE j V E T - l b e i DOÜdbüS w a r _^ • Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 1S697 412 925-7272 1 t - m NPN Power Switching Transistors 100-200 Amperes 400-500 Volts Features: □ Triple Diffused Design □ Compression Bonded Construction
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00UdbÃ
T-33-15
10msec
100msec
D7ST4013
amperes
D7ST4010
D7ST401310
D7ST4015
D7ST4510
D7ST4515
D7ST5010
130Amp
IB215
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2SK573
Abstract: diode 35v 10a
Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ff-MOS 2SK573 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 15.9MAX. .03.2±O.2 DRIVE APPLICATIONS. . Low Drain-Source ON Resistance
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2SK573
0-24i2
2SK573
diode 35v 10a
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} T í 9097250 TOS HI B A DISCRETE/OPTO SEMICONDUCTOR DE|lDT7a5D 99D 16723 D0lti7E3 DT-S^HS TOSHIBA FIELD EFFECT TRANSISTOR 2 S I 5 7 3 SILICON N CHANNEL MOS TYPE T E N T A T IV E TECHNICAL DATA (zr-Mos > INDUSTRIAL APPLICATIONS Unit in mm
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300yA
VDg-250V
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S211-S
Abstract: S-335T S211S
Text: rrrrms e r ie s I s t o g g l e s w it c h e s HIGH RATED/STANDARD SIZE/1 & 2 POLE POLES, CIRCUITS, & RATINGS TOGGLE POSITION AND TERMINAL NUMBERS ELECTRICAL CAPACITY = Momentary Down POLE & THROW CONNECTIED TERMINAL S S302 S302F S302T S303 S303T S305
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S301F
S301T
S211s
S300s,
S800s
S4012
S520s
S211-S
S-335T
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IRF 543 MOSFET
Abstract: Diode c514 irf 9540A irf 2030 IRF 511 MOSfet 9540A irfp254 IRFP255 C514 fiat irf 2030 n
Text: HE D § 4055452 INTERNATIONAL r - J r - fiT □□□Ö75Ö 7 | Data Sheet No. PD-9.540A RECTIFIER TOR INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS • o IRFPS54 IRFP255 N-CHANIMEL Product Summary 250 Volt, 0.14 Ohm HEXFET
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4flS54SZ
O-247AC
C-513
IRFP254,
IRFP255
T-39-15
C-514
IRF 543 MOSFET
Diode c514
irf 9540A
irf 2030
IRF 511 MOSfet
9540A
irfp254
C514 fiat
irf 2030 n
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n 4111
Abstract: N channel Mosfet 15A 500V
Text: CSJ H a r r i s U U I S E M I C O N D U C T O R FRE264D, FRE264R, FfíE2G4H 23A, 250V, 0.130 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 23A, 250V, RDS on = 0.1300 TO-256AA • Second Generation Rad Hard MOSFET Results From New Design Concept*
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FRE264D,
FRE264R,
O-256AA
100KRAD
300KRAD
1000KRAD
3000KRAD
FRE264H
n 4111
N channel Mosfet 15A 500V
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCR ETE /OPTO} 9097250 TOSHIBA ¿/aììùUii T i D e I td^SSD 001^723 7 DISCRETE/OPTO TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 S I 5 7 3 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (zr-Mos > TENTATIVE INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS.
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300yA
VDg-250V
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1RF224
Abstract: irf224 irf224 n IRF225 F102 QQQC107C1 TI020
Text: HE 0 f 4555455 QG0ci a 7 a 1 | T-39-11 Data Shêet No. PD-9.473A INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER HEXFET TRANSISTORS I« R IR F 8S 4 IRFSS5 N-CHAIMNEL 250 Volt, 1.1 Ohm HEXFET T he HEXFET® technology is the key to International Rectifier’s advanced line of power M O S FE T transistors.
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T-39-11
IRF225
T-39-11
1RF224
irf224
irf224 n
F102
QQQC107C1
TI020
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