tf 216 10a 250v
Abstract: DYE*TCO DF184S ISO 8015 tolerance DYE DF84S ISO 8015 tf 115 250v 15a DF240S 250V 10A TF 106 thermoresistor
Text: RoHS Highly Reliable Safety Device THERMAL LINKS DONG-YANG ELECTRONICS CO., LTD. The ultimate one-shot temperature safety device. Thermal links are designed to provide upper limit temperature protection of all electric and electronic products, keeping the products functioning properly
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TJ142D
TJ152D
TJ78D
TJ99D
tf 216 10a 250v
DYE*TCO
DF184S
ISO 8015 tolerance
DYE DF84S
ISO 8015
tf 115 250v 15a
DF240S
250V 10A TF 106
thermoresistor
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SEFUSE SF240E
Abstract: SEFUSE SF214E SEFUSE SEFUSE SF129E SEFUSE SF226e SF240E SF119E SEFUSE SF214E sefuse sf 91e SF139Y
Text: SEFUSE TM THERMAL CUTOFF 8th Edition Cutaway View of SEFUSETM SF Type SF Type SEFUSE TM Contents Introduction . 4 Features . 4
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EM0060EJ8V1SG00
SEFUSE SF240E
SEFUSE SF214E
SEFUSE
SEFUSE SF129E
SEFUSE SF226e
SF240E
SF119E SEFUSE
SF214E
sefuse sf 91e
SF139Y
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FSL430R
Abstract: tf 115 250v 2a 4010 IC data sheet MIL-S-19500 2E12 3E12 FSL430D fsl430
Text: S E M I C O N D U C T O R FSL430D, FSL430R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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FSL430D,
FSL430R
100KRADS
100ghts
1-800-4-HARRIS
FSL430R
tf 115 250v 2a
4010 IC data sheet
MIL-S-19500
2E12
3E12
FSL430D
fsl430
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2N6547
Abstract: No abstract text available
Text: Product Specification www.jmnic.com 2N6547 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS Suited for 115 and 220 volt line operated switch-mode applications such as : ・Switching regulators ・PWM inverters and motor controls
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2N6547
Collector10A
2N6547
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2N6547
Abstract: 2N6546 tf 115 250v 2a
Text: SavantIC Semiconductor Product Specification 2N6546 2N6547 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High voltage ,high speed APPLICATIONS Suited for 115 and 220 volt line operated switch-mode applications such as : ·Switching regulators
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2N6546
2N6547
2N6546
2N6547
tf 115 250v 2a
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2N6547
Abstract: 2N6546
Text: JMnic Product Specification 2N6546 2N6547 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS Suited for 115 and 220 volt line operated switch-mode applications such as : ・Switching regulators ・PWM inverters and motor controls
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2N6546
2N6547
2N6546
2N6547
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Untitled
Abstract: No abstract text available
Text: FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically
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FSL430D,
FSL430R
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2E12
Abstract: 3E12 FSL430D FSL430D1 FSL430D3 FSL430R FSL430R1 FSL430R3
Text: FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically
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FSL430D,
FSL430R
2E12
3E12
FSL430D
FSL430D1
FSL430D3
FSL430R
FSL430R1
FSL430R3
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2N6547
Abstract: tf 115 250v 15a 2N6546
Text: Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6546 2N6547 DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS Suited for 115 and 220 volt line operated switch-mode applications such as : ・Switching regulators
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2N6546
2N6547
2N6546
2N6547
tf 115 250v 15a
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2E12
Abstract: 3E12 FSL430D FSL430D1 FSL430D3 FSL430R FSL430R1 FSL430R3
Text: FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 2A, 500V, rDS ON = 2.50Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically
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FSL430D,
FSL430R
2E12
3E12
FSL430D
FSL430D1
FSL430D3
FSL430R
FSL430R1
FSL430R3
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Untitled
Abstract: No abstract text available
Text: , LJne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. M J13333 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO(SUS) = 400V(Min) • High Switching Speed
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J13333
COLLE00V
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equivalent mje13005
Abstract: 2N2222 transistor curve 2N2222 SOA 2N2222 transistor output curve
Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.
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MJE13005
O-220F
QW-R219-001
equivalent mje13005
2N2222 transistor curve
2N2222 SOA
2N2222 transistor output curve
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equivalent mje13005
Abstract: 2N2222 transistor output curve transistor mje13005 mje13005 equivalent
Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.
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MJE13005
O-220
QW-R203-018
equivalent mje13005
2N2222 transistor output curve
transistor mje13005
mje13005 equivalent
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equivalent mje13005
Abstract: 1N4933 equivalent
Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.
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MJE13005
O-220
QW-R203-018
equivalent mje13005
1N4933 equivalent
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10016DC
Abstract: TF PTC
Text: S T 15950 M I C R O S E ívíI — . C Q R P / P OWE R 02 —- 02E D E |b ll5 ^ 0 0Ö476 _D 0QQDM71n b | • —w t “"T '' « ? ,3 * '2 ^ py q f -|0 0 1 5 PTC 10016 'J P 'T C C T TECHNOLOGY Power Technology Components HIGH VOLTAGE DARLINGTON
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0QQDM71n
10016DC
TF PTC
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transistor d333
Abstract: TRANSISTOR BC 384 mercury wetted relay, double contact DT5336 npn darlington 6A 400V NPN Transistor 10A 400V to3 power darlington 100W Transistor bc 879 high voltage darlington Darlington 300v
Text: LUCAS STABILITY ELEK 011. UU164 100W A H LTD öl D n D • — SL.07013 -T - 3 3 - 2 ,7 HIGH V O LTA G E DARLINGTON TR A N SIST O R S 300-500V CO LLEC TO R -EM ITTER V O LTA G E □ □ □ □ im DT4335 DT4336 DT5335 DT5336 ■ LUCB The DT4335/6 and DT5335/6 are NPN double epitaxial devices conforming to
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uu164
G7G13
00-500V
T4335
DT4336
DT5335
DT5336
DT4335/6
DT5335/6
O-3/TO-204.
transistor d333
TRANSISTOR BC 384
mercury wetted relay, double contact
npn darlington 6A 400V
NPN Transistor 10A 400V to3
power darlington 100W
Transistor bc 879
high voltage darlington
Darlington 300v
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Untitled
Abstract: No abstract text available
Text: FSL430D, FSL430R 2A, 500V, 2.50 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 2A, 500V, ros ON = 2.50£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space
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OCR Scan
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FSL430D,
FSL430R
36MeV/mg/cm2
O-205AF
254mm)
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PDF
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Untitled
Abstract: No abstract text available
Text: 3 FSL430D, FSL430R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs june 1997 Features • Description 2A, 500V, rQS oN) = 2.50Q • Total Dose - Meets Pre-Rad Specifications to 100KRAD(Si) • Single Event - Safe Operating Area Curve for Single Event Effects
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FSL430D,
FSL430R
100KRADS
1-800-4-HARRIS
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PDF
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Untitled
Abstract: No abstract text available
Text: h a r r is S E M I C O N D U C T O R FSL430D, FSL430R " M W • • Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features Description • 2A, 500V, ros ON = 2.50£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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FSL430D,
FSL430R
100KRADS
1-800-4-HARRIS
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PDF
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Panasonic ECE-A1H
Abstract: Panasonic SU ECEA1HU ECEA1VU ECE-A1H ecea2cu
Text: Panasonic A lu m in u m E lectrolytic Capacitors Radial Leads Type SU Series Radial Leads Type FEATURES • Standard Grade ■ Life : 2000 hours at + 85°C ■ W ide Range of Rated W orking Voltage from 6.3V to 450V ■ Fan Fold Box Packaging for Automatic Insertion
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120Hz.
F/35V
F/100V
Panasonic ECE-A1H
Panasonic SU
ECEA1HU
ECEA1VU
ECE-A1H
ecea2cu
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GE6062
Abstract: GE6060 ge6061
Text: HARRIS SEMICOND SECTOR 27E » • 43QHE,.7]i 0020415 2 « H A S !_ File Number Power Transistors GE6060,GE6061,GE6062 15.85 - " r '3 3 '2 ^ 1 ' 20-Ampere N-P-N Darlington Power Transistors
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43QHE,
GE6060
GE6061
GE6062
20-Ampere
204AA
GE6060,
GE6061,
GE6062
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GES060
Abstract: GE5060 J325 tf 115 250v 15a 100J GE5061 GE5062 ge5062T tf 115 250v 2a
Text: File Number GE5060, GE5061, GE5062 15.84 20-Am pere N -P -N Darlington Power Transistors TERMINAL DESIGNATION : F LA N G E Features: • HIgh-voltaga operation: 350, 400, 450 volts ■ Gain o l 100 at 10A Applications: ■ Series/shunt regulators • Autom otive ignition
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GE5060,
GE5061,
GE5062
20-Ampere
O-204AA
GE5062
IC-20A
GES060
GE5060
J325
tf 115 250v 15a
100J
GE5061
ge5062T
tf 115 250v 2a
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GE6062
Abstract: GE6061 ge 6061 GE6060 NPN POWER DARLINGTON TRANSISTORS
Text: HIGH SPEED GE6060,1,2 NPN POWER DARLINGTON TRANSISTORS 400-500 VOLTS 20 AMP, 125 WATTS These devices are designed for use in high speed switching applications, such as off-line switching power supplies, A C & DC motor control, UPS systems, ultrasonic equipm ent and
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GE6060
t0-204aa
20tft
GE6060,
GE6062
GE6061
ge 6061
NPN POWER DARLINGTON TRANSISTORS
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2N6547
Abstract: tf 115 250v 2a 12 volt 200 Amp PWM
Text: 2N6547 NPN POWER TRANSISTORS 400 VOLTS 15 AMP, 175 WATTS The 2N6547 transistor is designed for high-voltage, high speed power switching in inductive circuits where fall time is critical. It is particularly suited for 115 and 220 volt line operated switch-m ode applications such as: switching regu
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2N6547
tf 115 250v 2a
12 volt 200 Amp PWM
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