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    TF 044 Price and Stock

    Same Sky CMC-5044TF-A

    Microphones Microphones
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    Mouser Electronics CMC-5044TF-A 2,144
    • 1 $0.54
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    Newhaven Display International NHD-0440WH-ATFH-JT#

    LCD Character Display Modules & Accessories FSTN (+) Transfl 190.0 x 54.0
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    Mouser Electronics NHD-0440WH-ATFH-JT# 532
    • 1 $31.95
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    JST Manufacturing UB-MC5BR3-SDWP604-4S-TF

    JST
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    Mouser Electronics UB-MC5BR3-SDWP604-4S-TF
    • 1 $2.67
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    • 100 $2.14
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    Vishay Intertechnologies CRCW201044R2FKTF

    Thick Film Resistors - SMD 3/4watt 44.2ohms 1%
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    Mouser Electronics CRCW201044R2FKTF
    • 1 $0.55
    • 10 $0.421
    • 100 $0.177
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    Micron Technology Inc MT29F512G08EBLGEJ4-ITF:G TR

    NAND Flash TLC 512G 64GX8 VBGA
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    Mouser Electronics MT29F512G08EBLGEJ4-ITF:G TR
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    TF 044 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    74HC1GU04

    Abstract: 74HC1GU04GW 74HCU04 HC1GU04
    Text: INTEGRATED CIRCUITS DATA SHEET 74HC1GU04 Inverter Product specification File under Integrated Circuits, IC06 1998 Nov 18 Philips Semiconductors Product specification Inverter 74HC1GU04 FEATURES QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf = 6.0 ns.


    Original     		PDF 74HC1GU04 SCA60 245106/00/01/pp16 74HC1GU04 74HC1GU04GW 74HCU04 HC1GU04

    micro switch t85 10e3

    Abstract: ENEC SR T85 T85 50e3 Switch 250vac MICRO SWITCH 250VAC-10E3 R5 Series T85 50e3 T85/50e3 T125U SR T85 ENEC 10 10e3 t90
    Text: Snap-acting Product Selection Guide Snap-acting Series Switch Type Poles/Throws Maximum Current TF TM LC LCA LCS MM Miniature Miniature Subminiature Precision Subminiature Sealed Subminiature Subminiature SPST, SPDT SPST, SPDT SPST, SPDT SPDT SPST Subminiature


    Original     		PDF

    74AHC1GU04

    Abstract: 74AHC1GU04GW
    Text: INTEGRATED CIRCUITS DATA SHEET 74AHC1GU04 Inverter Product specification File under Integrated Circuits, IC06 1999 May 19 Philips Semiconductors Product specification Inverter 74AHC1GU04 FEATURES • Symmetrical output impedance QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns.


    Original     		PDF 74AHC1GU04 EIA/JESD22-A114-A EIA/JESD22-A115-A 245002/00/01/pp16 74AHC1GU04 74AHC1GU04GW

    74HC1G32

    Abstract: 74HC1G32GW 74HCT1G32 74HCT1G32GW SC88A
    Text: INTEGRATED CIRCUITS 74HC1G32 74HCT1G32 2-input OR gate Product specification File under Integrated Circuits, IC06 1997 Dec 16 Philips Semiconductors Product specification 74HC1G32 74HCT1G32 2-input OR gate FEATURES QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns


    Original     		PDF 74HC1G32 74HCT1G32 SCA55 budgetnum/printrun/ed/pp12 74HC1G32 74HC1G32GW 74HCT1G32 74HCT1G32GW SC88A

    NAND 74 SOT353

    Abstract: 74HC1G00 74HC1G00GW 74HCT1G00 74HCT1G00GW cmos 8 input nand gate 7430
    Text: INTEGRATED CIRCUITS DATA SHEET 74HC1G00; 74HCT1G00 2-input NAND gate Product specification File under Integrated Circuits, IC06 1998 Jul 30 Philips Semiconductors Product specification 74HC1G00; 74HCT1G00 2-input NAND gate FEATURES QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns


    Original     		PDF 74HC1G00; 74HCT1G00 74HC1G/HCT1G00 SCA60 245106/00/01/pp12 NAND 74 SOT353 74HC1G00 74HC1G00GW 74HCT1G00 74HCT1G00GW cmos 8 input nand gate 7430

    hc1g08

    Abstract: 74HC1G04 74HCT1G04 74HC1G08 74HC1G08GW 74HCT1G08 74HCT1G08GW 74hct1g
    Text: INTEGRATED CIRCUITS DATA SHEET 74HC1G08; 74HCT1G08 2-input AND gate Product specification File under Integrated Circuits, IC06 1998 Nov 10 Philips Semiconductors Product specification 74HC1G08; 74HCT1G08 2-input AND gate FEATURES QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns.


    Original     		PDF 74HC1G08; 74HCT1G08 SCA60 245106/00/01/pp12 hc1g08 74HC1G04 74HCT1G04 74HC1G08 74HC1G08GW 74HCT1G08 74HCT1G08GW 74hct1g

    74HC-HCT02

    Abstract: 74HC1G02 74HC1G02GW 74HCT1G02 74HCT1G02GW diode marking code 777 HCT1G02
    Text: INTEGRATED CIRCUITS DATA SHEET 74HC1G02; 74HCT1G02 2-input NOR gate Product specification File under Integrated Circuits, IC06 1998 Aug 31 Philips Semiconductors Product specification 2-input NOR gate FEATURES 74HC1G02; 74HCT1G02 QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns.


    Original     		PDF 74HC1G02; 74HCT1G02 SCA60 245106/00/01/pp12 74HC-HCT02 74HC1G02 74HC1G02GW 74HCT1G02 74HCT1G02GW diode marking code 777 HCT1G02

    B0677A

    Abstract: B0677 a B0331 BOW53A b0263 75G60 2S01275 MJ4000
    Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO Ie Max PD Max (V) (A) (W) hFE Min Max fT leBO Max (Hz) (A) tr Max (8) tf Max (8) Toper Max ee) Package Style NPN Darlington Transistors, (Cont'd) 5 10 15 20 2S01164Z 2S01164Z SON301 U2T301


    Original     		PDF 2S01164Z SON301 U2T301 SON401 U2T401 2S01764 B0677A B0677 a B0331 BOW53A b0263 75G60 2S01275 MJ4000

    box53a

    Abstract: bot63 218m motorola mj1200 BOW93A 2S0558 2S0405 BOT65 B089 TO221AB
    Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) fT hFE Min Max (Hz) ICBO Max (A) t, Max tf Max (8) (8) Toper Max (Oe) Package Style NPN Darlington Transistors, (Cont'd) 5 10 15 20 25 30 35 40 45 50 B0897A BOX53A


    Original     		PDF B0897A BOX53A 2S01572 2S01176 2S01219 2S01262 2S01277 2S01321 2S01327 B0267 bot63 218m motorola mj1200 BOW93A 2S0558 2S0405 BOT65 B089 TO221AB

    b0333

    Abstract: box53b 044E3 BOW93B b0647 BOX67A BOT63A BOT65A 2N605B B0699
    Text: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) fT hFE Min Max (Hz) ICBO Max (A) tr Max tf Max (s) (s) 300n 500n 500n 1.2u 175 A 175 J 150 J 150 J 1.5u B.5u 300n 300n 300n 300n 5.0u 800n BOOn BOOn BOOn 150 J 175 J


    Original     		PDF U2T201 2N6352 2S01169 2S01315 SGS121 TIP121 TIP621 MJE1102 b0333 box53b 044E3 BOW93B b0647 BOX67A BOT63A BOT65A 2N605B B0699

    NEC D 809 F

    Abstract: NEC D 809 L transistor NEC D 986 E7138
    Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm


    OCR Scan     		PDF NE713 E71383B NE71383B] NE71300] NEC D 809 F NEC D 809 L transistor NEC D 986 E7138

    msc 5511

    Abstract: 276 238G TFK 241 d78p238 TFK 082 uPD78P238 uPD78P238GC uPD78P238KF PD78P238GJ sbthi
    Text: M o s » i t m s s M O S Integrated C ircu it //PD78P238 ¿¿PD78P238 Ci, //PD78238 75^/1v 7. ? ROM £ 9 > • ? < A PROM i v ^ ^ P = i > t 0i - ^ T " - r o (i EPROM H t ^ l i / : 8 tf 7 h • v ^ -— tf(Z «t £ 7 ° P 7 = j A *ê& <& .*<nJtÊ& 'fc«>,


    OCR Scan     		PDF uPD78P238 PD78P238 //PD78238 PD78234, PD78P238KF 78P238G msc 5511 276 238G TFK 241 d78p238 TFK 082 uPD78P238GC uPD78P238KF PD78P238GJ sbthi

    vlt 2900

    Abstract: uPD78P334 UPD78P334LQ 78p334 78P334LQ IC-8075 s13s3 T02I TFK 082 MPD78P334
    Text: • 5/— h M osm m m s& M O S Integrated Circuit /¿PD78P334 1 6 / 8 tf "y V • > > //PD 78P334 It, "y~? • v> f ^ □ ¿«PD 78334C Q rtg|$v*;? ROM •7> • i '- f A P R O M S S . B , —J tf c 'I t fc, EPROM S n M i, b° zl — 9 • ? -f A PROM i f c t i EPROM U S # f t x . / c n nn 'C f „


    OCR Scan     		PDF uPD78P334 78P334 78334C PD78334 32768X8 J2T43Bt\ 24-i- vlt 2900 UPD78P334LQ 78p334 78P334LQ IC-8075 s13s3 T02I TFK 082 MPD78P334

    Untitled

    Abstract: No abstract text available
    Text: I Ordering number: EN 2827 HPA150R NPN Triple Diffused Planar Silicon Composite Transistor SANYO Ultrahigh-Defìnition CRT Display Horizontal Deflection Output Applications i F e a tu r e s • H ighspeed tf ty p = 100ns • H igh breakdow n voltage ( V c b o = 1500V)


    OCR Scan     		PDF HPA150R 100ns) 8298MO 100mA

    TSP50C42

    Abstract: tsp50c4x TSP50C TSP50C41
    Text: TSP50C4X Family Speech Synthesizers Design Manual Tf v a «; In s t r u m e n t s 0 ^ 1 7 2 4 Da'll?!! m • IM PO RTANT NOTICE Texas Instruments Tl reserves the right to make changes to or to discontinue any semiconductor product or service identified in this


    OCR Scan     		PDF TSP50C4X BRN09 BRN10 TSP50C42 TSP50C TSP50C41

    054321

    Abstract: BA115
    Text: FO R R EFER EN C E O N LY 0 B n »rt^ »/G iW r£ h *a Sctvrll’t A - A / c / m s e tf«« / - / EinpreEsjbot?cn p r m -fit b cth ”-4 H" :fe s Ctoprcssboizcn p r tn -fitb o ik S!0 4 W 8 H 3 /044879.4-40! 064478^/053019 >4- ,0530% m ¿053017 «4-40 r<J"


    OCR Scan     		PDF 104S73tij 0B99Z QS4824, TMC-S9bis50-EE25-7 9Jo5Q-EE25-Z5 0S4886 054321 BA115

    FCR16

    Abstract: HD64F3694FP
    Text: IC dependence of osci Mating characteristies HD64F3694FP FCRI6.0M2G - S Room Temp. Udd CU] 5 CLI/CL2 CpF] item a~e 5 / 5 HD64F3694FP - 11 FCR16.0M2G Udd= 5 EU] (Fig.cTd) Ta= 20 Edeg] -0 Typical q . U1H/U1L EU] illw 4 tf-2_ V - V 1111 y)\L '(? 0-— 0- -0-i


    OCR Scan     		PDF HD64F3694FP FCR16

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Quad 2 -In p u t NOR G ate M C 10102 The MC10102 is a quad 2-input NOR gate. The MC10102 provides one gate with OFVNOR outputs. PD = 25 mW typ/gate No Load tpd = 2.0 ns typ tr, tf = 2.0 ns typ (20%-80%) L SUFFIX CERAMIC PACKAGE


    OCR Scan     		PDF MC10102 50-ohm DL122

    Untitled

    Abstract: No abstract text available
    Text: 1 Who HEWLETT mLriM P a c k a r d 2 - 8 GHz Medium Power Gallium Arsenide FE T Technical Data A TF-45101 Features • High Output Power: 29.0 dBm Typical Pi ¿ 3 at 4 GHz • High Gain a t ldB Compression: 10.0 dB Typical Gj ¿ 3 at 4 GHz • High Power Efficiency:


    OCR Scan     		PDF TF-45101 ATF-45101 4447SÃ 0D17732

    Untitled

    Abstract: No abstract text available
    Text: T h p t HEWLETT &"UM PA C K A R D 2 - 8 GHz Medium Power Gallium Arsenide FET Technical Data A TF-44101 Featu res • High Output Power: 32.0 dBm Typical Pi ^ at 4 GHz • High Gain a t 1 dB Compression: 8.5 dB Typical Gj ^ at 4 GHz • High Power Efficiency:


    OCR Scan     		PDF TF-44101 ATF-44101

    F2683

    Abstract: No abstract text available
    Text: That HEWLETT mi/LMPACKARD 2-16 GHz General Purpose Gallium Arsenide FET Technical Data A TF-26836 F e a tu r e s D escrip tio n • High Output Power: 18.0 dBm Typical Pj dB at 12 GHz The ATF-26836 is a high perfor­ mance gallium arsenide Schottkybarrier-gate field effect transistor


    OCR Scan     		PDF TF-26836 ATF-26836 5965-8704E 44475A4 DD1771Ö F2683

    LM016L

    Abstract: hitachi hd44780A00 LCD LM016L hd44780a00 HITACHI LCD lm016L lm016l lcd LM044L LM015 LM041L LM017L
    Text: ► HITACHI 3 3 £ tf-So 34 LM027-* IN T E R N A L PIN C O N N EC TIO N • 24 character x 1 line ■ Controller LS I HD44780 is built-in See page 101 Pin No Effective display area . 100W x 13 8H mm Character size (5 x 1 0 dots) . 3.15W x 7.9H mm


    OCR Scan     		PDF LM027-* HD44780 15Wx7 V00-V0 LM016L hitachi hd44780A00 LCD LM016L hd44780a00 HITACHI LCD lm016L lm016l lcd LM044L LM015 LM041L LM017L

    2SA1626

    Abstract: S0532 TRANSISTOR BO 346 X108 TIA03
    Text: NEC À Silicon Transistor 2SA1626 PNP ¡S& ÉL Sil i E X -f "J *f-> *f PN P Silicon Triple Diffused Transistor High Speed High Voltage Switching ft ftw m m o PtjÉJ'E'C-to V Ceo = — 400 V o x ^ y f > ^ " X : mm 7.0 M A X . b°— tf<0.7 /US T a = 25 ° C )


    OCR Scan     		PDF PWS10 247-Lij 22-Lil 24-Lil 22-fl 29-Jt 27-tetà 29-itijulft 26-ffl 2SA1626 S0532 TRANSISTOR BO 346 X108 TIA03

    ACT573 Harris

    Abstract: ac573 harris 74ac563
    Text: Technical Data CD54/74AC563, CD54/74AC573 CD54/74ACT563, CD54/74ACT573 V Tf x a s In s t r u m e n t s Data sheet acquired from Harris Sem iconductor SCHS291 — 16 J 5TJ 55 Q0 - Q Ï Ql -0 2 02 -0 3 QÏ -0 4 04 - 0 5 05 -0 6 06 -0 7


    OCR Scan     		PDF CD54/74AC563, CD54/74AC573 CD54/74ACT563, CD54/74ACT573 SCHS291 CD54/74AC/ACT563 CD54/74AC/ACT573 92CS-42546 RCA-CD54/74AC563 ACT573 Harris ac573 harris 74ac563