Untitled
Abstract: No abstract text available
Text: User’s Manual TK-850/JG3H Date published: Oct 2008 Rev. 1.0 TESSERA TECHNOLOGY INC. 2008 Printed in Japan TK-850/JG3H User’s Manual Windows and Windows XP are registered trademarks or trademarks of Microsoft Corporation in the United States and/or other countries.
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TK-850/JG3H
TK-850/JG3H
SG-310
PG1112H
TCS00219
UX60A-MB-5ST
BLM41PG750S
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sublvds to lvds
Abstract: sub-lvds sublvds TX B0177 link budget calculation 3 POSITION TOGGLE SWITCH 6 pin s0224 sublvds SLLS836 SN65LVDS305
Text: SN65LVDS310 www.ti.com SLLS836 – MAY 2007 PROGRAMMABLE 27-BIT SERIAL-TO-PARALLEL RECEIVER FEATURES • • • • • • • • • • • Serial Interface Technology Compatible With FlatLink 3G Transmitters E.g., SN65LVDS305 or SN65LVDS307 Supports Video Interfaces up to 24-Bit RGB
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SN65LVDS310
SLLS836
27-BIT
SN65LVDS305
SN65LVDS307)
24-Bit
405-Mbps
sublvds to lvds
sub-lvds
sublvds TX
B0177
link budget calculation
3 POSITION TOGGLE SWITCH 6 pin
s0224
sublvds
SLLS836
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power amplifier ic ta2040
Abstract: Nokia 6100 LCD TA2040 Transceiver Broadcom 3G RF interfacing 8051 with bluetooth modem Tripath TA2040 AMPLIFIER pixelworks L7205 tft interface with 8051 trw radar ac
Text: SEMICONDUCTOR TIMES JULY 2000 / 1 JULY 2000 FOCUSED ON EMERGING SEMICONDUCTOR COMPANIES Radar Scope Bay Microsystems Bay Microsystems was recently founded to develop chips. What kind? The company wouldn’t disclose any details to us. One rumor is “high-speed interfaces” whatever
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K8D3216UBC-pi07
Abstract: K5E5658HCM KAD070J00M KBH10PD00M K5D1257ACM-D090000 samsung ddr2 ram MTBF KBB05A500A K801716UBC k5d1g13acm k5a3281ctm
Text: Product Selection Guide Memory and Storage April 2005 MEMORY AND STORAGE SECTION A DRAM DDR2 SDRAM DDR SDRAM SDRAM RDRAM NETWORK DRAM MOBILE SDRAM GRAPHICS DDR SDRAM DRAM ORDERING INFORMATION FLASH NAND, OneNAND, NOR FLASH NAND FLASH ORDERING INFORMATION SRAM
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BR-05-ALL-002
K8D3216UBC-pi07
K5E5658HCM
KAD070J00M
KBH10PD00M
K5D1257ACM-D090000
samsung ddr2 ram MTBF
KBB05A500A
K801716UBC
k5d1g13acm
k5a3281ctm
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A115-A
Abstract: C101 SN65LVDS305 SN65LVDS305ZQER SN65LVDS306
Text: SN65LVDS305 www.ti.com SLLS744A – AUGUST 2006 – REVISED JANUARY 2007 PROGRAMMABLE 27-BIT DISPLAY SERIAL INTERFACE TRANSMITTER FEATURES • • • • • • • • • • • • • • FlatLink 3G Serial-Interface Technology Compatible With FlatLink3G Receivers Such
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SN65LVDS305
SLLS744A
27-BIT
SN65LVDS306
24-bit
A115-A
C101
SN65LVDS305
SN65LVDS305ZQER
SN65LVDS306
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Direct-Rambus-RIMM
Abstract: ic marking B48 750 B36 Transistor NEC 12d G100 MC-4R128CPE6C IC MARKING A60 6043b label LOT CODE NEC
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-4R128CPE6C Direct RambusTM DRAM RIMMTM Module 128M-BYTE 64M-WORD x 16-BIT Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other
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MC-4R128CPE6C
128M-BYTE
64M-WORD
16-BIT)
MC-4R128CPE6C
PD488448)
600MHz,
711MHz
800MHz
Direct-Rambus-RIMM
ic marking B48
750 B36
Transistor NEC 12d
G100
IC MARKING A60
6043b
label LOT CODE NEC
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MC-4R64FKE8S
Abstract: PD488588 PD488588FF
Text: DATA SHEET Direct Rambus DRAM SO-RIMMTM Module MC-4R64FKE8S 32M words x 18 bits Description Features The Direct Rambus SO-RIMM module is a generalpurpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, mobile personal
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MC-4R64FKE8S
M01E0107
E0140N30
MC-4R64FKE8S
PD488588
PD488588FF
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Direct-Rambus-RIMM
Abstract: MC-4R128FKE6D PD488588 PD488588FF
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R128FKE6D Direct Rambus DRAM RIMMTM Module 128M-BYTE 64M-WORD x 16-BIT Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other
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MC-4R128FKE6D
128M-BYTE
64M-WORD
16-BIT)
MC-4R128FKE6D
PD488588)
600MHz,
711MHz
800MHz
M01E0107
Direct-Rambus-RIMM
PD488588
PD488588FF
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DDR2-400
Abstract: DDR2-533 EBE25RC8AAFA-4C-E EBE25RC8AAFA-5C-E
Text: PRELIMINARY DATA SHEET 256MB Registered DDR2 SDRAM DIMM EBE25RC8AAFA 32M words x 72 bits, 1 Rank Description Features The EBE25RC8AAFA is a 32M words × 72 bits, 1 rank DDR2 SDRAM Module, mounting 9 pieces of DDR2 SDRAM sealed in FBGA (µBGA) package. Read and
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256MB
EBE25RC8AAFA
EBE25RC8AAFA
M01E0107
E0470E10
DDR2-400
DDR2-533
EBE25RC8AAFA-4C-E
EBE25RC8AAFA-5C-E
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DDR2-533
Abstract: EBE10RD4ABFA-4A-E EBE10RD4ABFA-4C-E EBE10RD4ABFA-5C-E DDR2-400
Text: PRELIMINARY DATA SHEET 1GB Registered DDR2 SDRAM DIMM EBE10RD4ABFA 128M words x 72 bits, 1 Rank Description Features The EBE10RD4ABFA is a 128M words × 72 bits, 1 rank DDR2 SDRAM Module, mounting 18 pieces of DDR2 SDRAM sealed in FBGA (µBGA) package.
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EBE10RD4ABFA
EBE10RD4ABFA
M01E0107
E0366E60
DDR2-533
EBE10RD4ABFA-4A-E
EBE10RD4ABFA-4C-E
EBE10RD4ABFA-5C-E
DDR2-400
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EBR25UC8ABFD-8C
Abstract: EBR25UC8ABFD-AD EBR25UC8ABFD-AE EBR25UC8ABFD-AEP EDR2518ABSE EBR25UC8ABFD
Text: DATA SHEET 256MB Direct Rambus DRAM RIMM Module EBR25UC8ABFD 128M words x 16 bits Description Features The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including
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256MB
EBR25UC8ABFD
1066MHz/800MHz
925mm
M01E0107
E0317E20
EBR25UC8ABFD-8C
EBR25UC8ABFD-AD
EBR25UC8ABFD-AE
EBR25UC8ABFD-AEP
EDR2518ABSE
EBR25UC8ABFD
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DDR2-533
Abstract: EBE20RE4AAFA-4A-E EBE20RE4AAFA-5C-E DDR2-400
Text: PRELIMINARY DATA SHEET 2GB Registered DDR2 SDRAM DIMM EBE20RE4AAFA 256M words x 72 bits, 1 Rank Description Features The EBE20RE4AAFA is a 256M words × 72 bits, 1 rank DDR2 SDRAM Module, mounting 18 pieces of DDR2 SDRAM sealed in FBGA (µBGA) package.
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EBE20RE4AAFA
EBE20RE4AAFA
M01E0107
E0440E20
DDR2-533
EBE20RE4AAFA-4A-E
EBE20RE4AAFA-5C-E
DDR2-400
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EDE1104AASE
Abstract: EDE1104AASE-4A-E EDE1104AASE-5C-E EDE1104AASE-6C-E EDE1108AASE
Text: PRELIMINARY DATA SHEET 1G bits DDR2 SDRAM EDE1104AASE 256M words x 4 bits EDE1108AASE (128M words × 8 bits) Description Features The EDE1104AA is a 1G bits DDR2 SDRAM organized as 33,554,432 words × 4 bits × 8 banks. The EDE1108AA is a 1G bits DDR2 SDRAM organized
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EDE1104AASE
EDE1108AASE
EDE1104AA
EDE1108AA
68-ball
M01E0107
E0404E10
EDE1104AASE
EDE1104AASE-4A-E
EDE1104AASE-5C-E
EDE1104AASE-6C-E
EDE1108AASE
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DDR2-400
Abstract: DDR2-533 EBE51UD8ABFA EBE51UD8ABFA-4A EDE5108ABSE
Text: PRELIMINARY DATA SHEET 512MB Unbuffered DDR2 SDRAM DIMM EBE51UD8ABFA 64M words x 64 bits, 1 Rank Description Features The EBE51UD8ABFA is 64M words × 64 bits, 1 rank DDR2 SDRAM unbuffered module, mounting 8 pieces of 512M bits DDR2 SDRAM sealed in FBGA (µBGA)
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512MB
EBE51UD8ABFA
EBE51UD8ABFA
M01E0107
E0357E10
DDR2-400
DDR2-533
EBE51UD8ABFA-4A
EDE5108ABSE
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R128FKE8D Direct Rambus DRAM RIMMTM Module 128M-BYTE 64M-WORD x 18-BIT Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other
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MC-4R128FKE8D
128M-BYTE
64M-WORD
18-BIT)
MC-4R128FKE8D
PD488588)
600MHz,
711MHz
800MHz
M01E0107
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET 512MB 32-bit Direct Rambus DRAM RIMM Module MC-4R512FKK8K 128M words x 18 bits × 2 channels Description Features The 32-bit Direct Rambus RIMM module is a generalpurpose high-performance lines of memory modules suitable for use in a broad range of applications
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512MB
32-bit
MC-4R512FKK8K
800MHz
925mm
M01E0107
E0254N10
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Untitled
Abstract: No abstract text available
Text: DATA SHEET Direct Rambus DRAM SO-RIMMTM Module MC-4R64FKE8S-840 32M words x 18 bits Description Features The Direct Rambus SO-RIMM module is a generalpurpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, mobile personal
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MC-4R64FKE8S-840
M01E0107
E0259N10
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DDR2-400
Abstract: DDR2-533 DDR2-667 EBE51ED8AGFA EBE51ED8AGFA-4A-E EBE51ED8AGFA-5C-E EBE51ED8AGFA-6E-E EDE5108AGSE-6E-E
Text: DATA SHEET 512MB Unbuffered DDR2 SDRAM DIMM EBE51ED8AGFA 64M words x 72 bits, 1 Rank Description Features The EBE51ED8AGFA is 64M words × 72 bits, 1 rank DDR2 SDRAM unbuffered module, mounting 9 pieces of 512M bits DDR2 SDRAM sealed in FBGA (µBGA)
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512MB
EBE51ED8AGFA
EBE51ED8AGFA
M01E0107
E0783E20
DDR2-400
DDR2-533
DDR2-667
EBE51ED8AGFA-4A-E
EBE51ED8AGFA-5C-E
EBE51ED8AGFA-6E-E
EDE5108AGSE-6E-E
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143-PIN
Abstract: No abstract text available
Text: DATA SHEET 256MB SDRAM Micro DIMM EBS25UC8APMA 32M words x 64 bits, 1 bank Description Features The EBS25UC8APMA is 32M words × 64 bits, 1 bank Synchronous Dynamic RAM Micro Dual In-line Memory Module (Micro DIMM), mounted 8 pieces of 256M bits SDRAM sealed in µBGA package. This module
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256MB
EBS25UC8APMA
EBS25UC8APMA
144-pin
18inch
100MHz/13ribed
M01E0107
E0241E30
143-PIN
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R128FKE8S Direct RambusTM DRAM SO-RIMMTM Module 128M-BYTE 64M-WORD x 18-BIT Description The Direct Rambus SO-RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, mobile personal computers, networking
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MC-4R128FKE8S
128M-BYTE
64M-WORD
18-BIT)
MC-4R128FKE8S
PD488588)
800MHz
M01E0107
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RDRAM RAMBUS
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R256FKE6D Direct RambusTM DRAM RIMMTM Module 256M-BYTE 128M-WORD x 16-BIT Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other
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MC-4R256FKE6D
256M-BYTE
128M-WORD
16-BIT)
MC-4R256FKE6D
PD488588)
600MHz,
711MHz
800MHz
RDRAM RAMBUS
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Elpida Memory
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT MC-4R512FKE6D-840 Direct Rambus DRAM RIMMTM Module 512M-BYTE 256M-WORD x 16-BIT Description The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for use in a broad range of applications including computer memory, personal computers, workstations, and other
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MC-4R512FKE6D-840
512M-BYTE
256M-WORD
16-BIT)
MC-4R512FKE6D
PD488588)
600MHz,
711MHz
800MHz
M01E0107
Elpida Memory
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Untitled
Abstract: No abstract text available
Text: Arrays PGA / Z IF Pin Grid A rray / Zero Insertion Force (Pages 9-18) BGA / C SP (Ball Grid A rray / Chip Scale Packaging) (Pages 19-21) liBGA" / C SP (Micro Ball Grid A rray / Chip Scale Packaging) (Pages 22-30) ^iBGA is a a registered Tradem ark of Tessera Inc. All rights reserved.
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Untitled
Abstract: No abstract text available
Text: TMS28F008Axy,TMS28F800Axy 1 048 576 BY 8-BIT/524 288 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES SM JS851A-NO VEM BER 1997 - REVISED MARCH 1998 • Organization . . . 1048576 By 8 Bits 524288 By 16 Bits • Array-Blocking Architecture - Two 8K-Byte/4K-Word Parameter Blocks
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TMS28F008Axy
TMS28F800Axy
8-BIT/524
16-BIT
JS851A-NO
96K-Byte/48K-Word
128K-Byte/64K-Word
16K-Byte/8K-Word
28F008Axy70
28F008Axy80
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