Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TEN 4623 Search Results

    TEN 4623 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    LTM4623IY Analog Devices Ultrathin 20VIN, 3A Buck DC/DC Visit Analog Devices Buy
    LTM4623IY#PBF Analog Devices Ultrathin 20VIN, 3A Buck DC/DC Visit Analog Devices Buy
    LTM4623EY#PBF Analog Devices Ultrathin 20VIN, 3A Buck DC/DC Visit Analog Devices Buy

    TEN 4623 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TEN 4623

    Abstract: RS-423 S23LC05-G S23LC12-G S23LC15-G S23LC24-G
    Text: S23LC03-G thru S23LC24-G SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4623, REV. - Green Products TVS ARRAY SERIES FEATURES SOT-23 ü Protects 3.3, 5, 12, 15, 24 V Components ü Unidirectional ü Ultra Low Capacitance 3 pF ü Low Leakage ü Provides Electrically Isolated Protection


    Original     		PDF S23LC03-G S23LC24-G OT-23 OT-23 S23LCXX-G TEN 4623 RS-423 S23LC05-G S23LC12-G S23LC15-G S23LC24-G

    Untitled

    Abstract: No abstract text available
    Text: 2-Channel, 256-Position Digital Potentiometer AD5207 a FEATURES 256-Position, 2-Channel Potentiometer Replacement 10 k⍀, 50 k⍀, 100 k⍀ Power Shut-Down, Less than 5 ␮A 2.7 V to 5.5 V Single Supply ؎2.7 V Dual Supply 3-Wire SPI-Compatible Serial Data Input


    Original     		PDF 256-Position AD5207 256-Position, 14-Lead RU-14) C01885â

    ct Potentiometer

    Abstract: Fixed resistor AD5235 10K POTENTIOMETER 10 turn dual AD5207 AD5207BRU100-REEL7 AD5207BRU10-REEL7 AD5207BRU50-REEL7 AD8402 B100
    Text: a FEATURES 256-Position, 2-Channel Potentiometer Replacement 10 k⍀, 50 k⍀, 100 k⍀ Power Shut-Down, Less than 5 ␮A 2.7 V to 5.5 V Single Supply ؎2.7 V Dual Supply 3-Wire SPI-Compatible Serial Data Input Midscale Preset During Power-On 2-Channel, 256-Position


    Original     		PDF 256-Position, 256-Position AD5207 AD5207 SOL-24, TSSOP-24 14-Lead RU-14) C01885 ct Potentiometer Fixed resistor AD5235 10K POTENTIOMETER 10 turn dual AD5207BRU100-REEL7 AD5207BRU10-REEL7 AD5207BRU50-REEL7 AD8402 B100

    AD5207

    Abstract: AD5207BRU100-REEL7 AD5207BRU10-REEL7 AD5207BRU50-REEL7 AD8402 B100 OP42 RU-14 AD5235
    Text: a FEATURES 256-Position, 2-Channel Potentiometer Replacement 10 k⍀, 50 k⍀, 100 k⍀ Power Shut-Down, Less than 5 ␮A 2.7 V to 5.5 V Single Supply ؎2.7 V Dual Supply 3-Wire SPI-Compatible Serial Data Input Midscale Preset During Power-On 2-Channel, 256-Position


    Original     		PDF 256-Position, 256-Position AD5207 AD5207 duSOL-24, TSSOP-24 14-Lead RU-14) C01885 AD5207BRU100-REEL7 AD5207BRU10-REEL7 AD5207BRU50-REEL7 AD8402 B100 OP42 RU-14 AD5235

    Untitled

    Abstract: No abstract text available
    Text: RF2516 Preliminary  9+ 8+) 75$160,77 5 7\SLFDO $SSOLFDWLRQV • 315/433MHz Band Systems • Remote Keyless Entry • Local Oscillator Source • Wireless Security Systems • Part 15.231 Applications • AM/ASK/OOK Transmitter 3URGXFW 'HVFULSWLRQ -A- 0.157


    Original     		PDF RF2516 315/433MHz RF2516 16-pin QSOP-16

    100 kilo OHM potentiometer

    Abstract: 1 kilo ohm variable resistor RESISTOR 10 KILO OHM AB Electronics potentiometer 1 kilo ohm resistor specifications 20 kilo OHM potentiometer Schematic of 100K digital potentiometer 100 KILO OHM RESISTOR Variable resistor 50K ohm 3 pins Variable resistor 5K ohm
    Text: PRELIMINARY TECHNICAL DATA 2-Channel, 256 Position Digital Potentiometer a AD5207 FEATURES 256 Position, 2-Channel Potentiometer Replacement 10K, 50K, 100KΩ Power Shut Down-Less than 5µA Midscale Preset +2.7 to +5.5 Single-Supply ±2.7V Dual-Supply 3-Wire SPI Compatible Serial Data Input


    Original     		PDF AD5207 19APR 100 kilo OHM potentiometer 1 kilo ohm variable resistor RESISTOR 10 KILO OHM AB Electronics potentiometer 1 kilo ohm resistor specifications 20 kilo OHM potentiometer Schematic of 100K digital potentiometer 100 KILO OHM RESISTOR Variable resistor 50K ohm 3 pins Variable resistor 5K ohm

    HM-6551-9

    Abstract: HM6551-9 191te D3302 6551-8
    Text: HARRIS SEMICOND SECTOR IS DË| M302S71 DOlObSñ ñ^f~ ' H a r r i s H M Features • • • • • • • • • • • • - 6 256 X T -4 6 -2 3 -0 8 5 5 4 CMOS RAM Pinout TOP VIEW 5 0 |iW Max. L o w S ta n d b y P o w e r.


    OCR Scan     		PDF M302S71 T-46-23-08 HM-6551 20mW/MHz 220nsMax. HM-6551-5 HM-6551-9 HM-6551-8 HM-6551-9 HM6551-9 191te D3302 6551-8

    CTO 2267

    Abstract: A10C CY7C170A A11C
    Text: CYPRESS SEMICONDUCTOR MbE D T ^ 'iy o fe . £5 ’¡ r ES&^hhE QGObSEê S B C Y P • CYPRESS SEMICONDUCTOR CY7C170A 4096 x 4 Static R/W RAM Features Functional Description • CMOS for optimum speed/power • Highspeed — t*A = 15 ns — tACS = 10 ns • Low active power


    OCR Scan     		PDF CY7C170A CY7C170A CY7C170A-35DMB CY7C170Aâ 35KMB CY7C170A- CY7C170A-45DMB CY7C170A-45KMB CTO 2267 A10C A11C

    HD04

    Abstract: 32KX8 CYM1420HD-20C CYM1420PD-25C PD05
    Text: CYPRESS •4□e t> m SEMI CONDUCTOR ssñibbs ooGsaoT a eicyp 7 = Y ¿ -2 S -/* i CYM1420 CYPRESS SEMICONDUCTOR 128K x 8 Static RAM M odule Functional Description Features High-density 1-megabit SRAM module High-speed CMOS SRAMs — Access time of 20 ns 32-pin, 0.6-inch-wide DIP package


    OCR Scan     		PDF CYM1420 32-pin, CYM1420 YM1420PD-20C CYM1420HD-20C CYM1420PD-25C CYM1420HD-25C CYM1420PD-30C CYM1420HD-30C CYM1420HD-30MB HD04 32KX8 PD05

    814800

    Abstract: cr2927 814800S
    Text: FUJITSU LTD S3E » • 374<ì75b DDD34D3 ^ ci ci « F C A J c O May 1992 Edition 1.0 FUJITSU DATA SHEET M B 8 1 4 8 0 0 A -70/-80/-10 CMOS 512KX.8 BIT FAST PAGE MODE D YNAMIC RAM CMOS 524,288 x 8 bit Fast Page Mode Dynamic RAM The Fujitsu MB814800Ais a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304


    OCR Scan     		PDF DDD34D3 512KX MB814800Ais MB814800A 512x8-bits MB814800A-70/-80/-10 814800 cr2927 814800S

    ic 7442

    Abstract: 7442 ic 7442
    Text: 16 MEG DRAM DHE DRAM DIE 16 MEG DRAM M T4C 4M 4B 1D 21A FEATURES DIE OUTLINE Top View Single 5.0V pow er supply Industry-standard x4 timing and functions H igh-perform ance CMOS silicon-gate process All inputs and outputs are TTL- and CM OS-com patible Refresh m odes: RAS"ONLY, CAS‘- BEFO RE-RA S(CBR),


    OCR Scan     		PDF 150mm 309x676 849x17 113x113 ic 7442 7442 ic 7442

    TMS44C256

    Abstract: sn74als6302 TMS4C1024 TMS4C1025-12 S4C1024 190TW TM024EAD9 tms*1024 TMS4C1024-12
    Text: 0 ^ 1 7 5 5 007702=1 7 • TMS4C1024, TMS4C1025, TMS4C1027 1,048,576-BIT DYNAMIC RANDOM-ACCESS MEMORIES TEXAS INSTR N PACKAGE TOP VIEW 1,048,676 x 1 Organization Single 5-V Supply (10% Tolerance) • ACCESS ACCESS ACCESS TIME TIME TIME TMS4C102-10 TMS4C102.-12


    OCR Scan     		PDF TMS4C1024, TMS4C1025, TMS4C1027 576-BIT 86-flE TMS4C102--10 TMS4C102 TMS4C1024--Enhanced TMS44C256 sn74als6302 TMS4C1024 TMS4C1025-12 S4C1024 190TW TM024EAD9 tms*1024 TMS4C1024-12

    SCT T

    Abstract: No abstract text available
    Text: RA MTRO N R a M V H E CORP D | 7555015 DGOGGEfc, FMx 801 FRAMTM T R Q N 1 I T - 4 6 -*3-57 256 x 1 Nonvolatile Static RAM c o r p o r a t io n Design Goal Specification Features 1Ferroelectronic Random Access Memory FRAM Demonstration Vehicle • "True" Nonvolatile CMOS Static RAM


    OCR Scan     		PDF 100ns 7S55015 T-46-23-37 100ns/V. SCT T

    toshiba tmp87ph46

    Abstract: RH56
    Text: TOSHIBA TM P87C447/847/H 47/847 L7H47L C M O S 8-BIT M IC R O C O N T R O L L E R TM P87C447U, TM P87C847U, TM P87CH47U, TM P87C847LU, TM P87CH47LU 87C447/847/H 47 are hig h speed and high p e rfo rm a n ce 8 -bit sin g le chip m icro co m p u ters. T h ese M CU co n ta in


    OCR Scan     		PDF P87C447/847/H L7H47L P87C447U, P87C847U, P87CH47U, P87C847LU, P87CH47LU 87C447/847/H P87C447U P37C847U toshiba tmp87ph46 RH56

    m4512

    Abstract: HYM59256AM
    Text: HYUNDAI 3TE ELECTRONI CS » m 4b750flö Ü0 0 Q3 7 Ô T •HYNK 256KX 9-Bit CMOS DRAM MODULE M451201A-APR9T DESCRIPTION FEATURES The HYM59256A is a 256K words by 9bits dynamic RAM m odule and consists o f Fast Page mode CM OS DRAMs of two HY534256J in 20/26 pin SOJ and one HY53C256LF in 18


    OCR Scan     		PDF 4b750flö 256KX M451201A-APR9T HYM59256A HY534256J HY53C256LF 22\sF HYM59256AM HYM59256AP HYM59256A-70 m4512

    a1232

    Abstract: delco 23566 STR 6458 P193D
    Text: -fa Sales Offices, Distributors & Representatives J u n e 1996 Altera Regional Offices NO RTH ERN CALIFORNIA C O R P O R A TE H EAD Q U AR TER S Altera Corporation 2610 Orchard Parkway San Jose, C A 95134-2020 TEL: (408)894-7000 FAX: (408)433-3943 (408) 894-7755


    OCR Scan     		PDF B-201 S-183 P193D a1232 delco 23566 STR 6458

    hyundai tv hy 22 f circuit

    Abstract: c 144 ESS HYM5C9256
    Text: HYUNDAI ELECTRONICS 3TE D • >4b7SGñó G D G Ü 3 S Ö 4 ■ HYNK 256K*9-Bit CMOS DRAM MODÍIfc&’ M421202A-APR91 DESCRIPTION The HYM5C9256 is a 256K words by 9 bits dynamic RAM m odule and consists o f nine HY53C256LF Fast Page mode CM OS DRAM s in 18 pin PLCC package mounted on a 30 pin


    OCR Scan     		PDF M421202A-APR91 HYM5C9256 HY53C256LF 22jiF HYM5C9256M HYM5C9256P HYM5C9256-70 HYM5C9256-80 HYM5C9256-10 HYM5C9256-12 hyundai tv hy 22 f circuit c 144 ESS

    HS-650

    Abstract: tfmo HS-6564RH Advanced Ceramic X 108RAD
    Text: H A RR IS S E M I C O N D S E CT OR J2J H A R R I S July 1990 T - H U 'Z 3 'iO 4302271 0034133 ? • H A S MGE ]> H S -6564R H Radiation Hardened 8K x 8, 16K x 4 CMOS RAM Module Features Pinout TOP VIEW • Radiation Hardened EPI CMOS • • • • • •


    OCR Scan     		PDF GQ34133 HS-6564RH 308mW/MHz 250nation HS-6564RH HS-6504RH HS-650 tfmo Advanced Ceramic X 108RAD

    Untitled

    Abstract: No abstract text available
    Text: LOGIC DEVICES INC 2bE D • SSbSTGS OGQlQib 3 ■ 2 x 4 K x 16 Cache-Data Static RAM DESCRIPTION FEATURES □ 2 x 4K x 16 or 8K x 16 Cache-Data Static RAM with Direct Map or Two-Way Set Associative □ Auto-Powerdown Design □ Advanced CMOS Technology


    OCR Scan     		PDF CY7C183/184 48-pin 52-pin L7C183/184 L7C183 L7C184

    4678T

    Abstract: 4665T
    Text: T O S H IB A TMP87C446/846/H46 CM OS 8 -BIT M IC R O C O N TR O LLER TMP87C446N, TMP87C846N, TMP87CH46N 87C446/846/H 46 are h ig h speed and hig h p e rfo rm a n ce 8 -bit sin g le chip m icro co m p u ters. T h ese M CU co n ta in CPU co re , RO M , R A M , in p u t/o u tp u t p o rts, an A/D c o n v e rte r, six m u lti-fu n c tio n tim e r/c o u n te rs , a se ria l


    OCR Scan     		PDF TMP87C446/846/H46 TMP87C446N, TMP87C846N, TMP87CH46N 87C446/846/H P87C446N P87C846N P87CH SDIP42-6QQ-1 P87PH 4678T 4665T

    pkg 4623

    Abstract: PKG 4611 PI pkg 4623 PI
    Text: DC/DC Power Modules 30-60 W PKG 4000 I • Effia&xy typ 86% 5 V at full lead * Lcwprdile11.0nmn(0.43in) * 1,500 V deis ialien vdtage (duäs= 1,000 Vcty * MTBF >200yœrsaî +75 'C case • Ruggad rmharica! deágiand éfia&t th&rrá manacpiwti, max + 100 "C e a se


    OCR Scan     		PDF Lcwprdile11 200yoersaî S-164 pkg 4623 PKG 4611 PI pkg 4623 PI

    tms4256

    Abstract: TMS4266
    Text: INSTR TM4256EL9, TM4256GU9 262,144 BY 9-BIT DYNAMIC BAM MODULES 7“-ifc-23-/7 25E D SEPTEMBER 1986 — REVISED M ARCH 1968 A SIC /MEMORY 262,144 x 9 Organization TM4266EL9 . . . L SMQLE-IN-UNE PACKAGE (TOP VIEWl_ Slngla 5-V Supply (10% Tolerance)


    OCR Scan     		PDF U17ES 077GC TM4256EL9, TM4256GU9 -ifc-23-/7 TM4266EL9 30-Pln TM4256EL9) TM4266GU9) tms4256 TMS4266

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELE CT RONICS INC MSE D Hi 7*T_h43i42 0010110 2 B SMGK KM44C266B CMOS DRAM 2 5 6 K X 4 Bit CMOS Dynamic RAM with Fast Page Mode : Write Per Bit Mode FEATURES GENERAL DESCRIPTION • Perform ance range; tR A C • • • • • • • • • •


    OCR Scan     		PDF h43i42 KM44C266B 130ns 150ns 44C266B- 180ns 20-LEAD

    samsung pram

    Abstract: No abstract text available
    Text: SAMSUNG ELE CTRONICS INC 4EE D • 7 ^ 4 1 4 2 OQlGlññ b » S H Û K KM41C4002 CMOS DRAM 4 M X I Bit CMOS Dynamic RAM with Static Column M od e'" FEATURES GENERAL DESCRIPTION • Perform ance range: The Samsung K M 41C 4002 is a high speed CMOS 4 ,1 9 4 ,3 0 4 bit X 1 Dynamic Random Access Memory.


    OCR Scan     		PDF KM41C4002 150ns 100ns 180ns GD10203 T-46-23-15 20-LEAD samsung pram