Hitachi DSA002742
Abstract: No abstract text available
Text: HL6312G Red Laser Diode for Industry and Measurement Application Error! Not a valid filename. ADE-208-190 F Z 7th. Edition May 1997 Description • The HL6312G is a 0.63µm band AlGaInp laser diode with multi quantum well (MQW) structure. Wavelength is equal to He-Ne Gas laser. It is suitable as a light source in bar code readers, laser
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HL6312G
ADE-208-190
HL6312G
633nm
Rati4005-1835
D-85622
Hitachi DSA002742
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038a
Abstract: No abstract text available
Text: Y Quantum Cascade Laser 6.1 m, 20 mW, TE-CW-FP P I L E R M R A N I FEATURES Emission wavelength 6.1 μm wavenumber : 1640 cm-1 Output power : 20 mW (CW operation) Fabry-Perot structure : spectral multi-mode CW operation at TE-cooled temperature Maximum operating temperture : 20 °C
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Abstract: No abstract text available
Text: QED222, QED223 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ = 880nm The QED222 and QED223 are 880nm AlGaAs LEDs encapsulated in a clear purple tinted, plastic T-1 3/4 package. ■ Chip material = AlGaAs ■ Package type: T-1 3/4 5mm lens diameter
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QED222,
QED223
880nm
QED222
QED223
880nm
QSD123/QSD124
100mA
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schematic diagram of infrared
Abstract: QED223
Text: QED222, QED223 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ = 880nm The QED222 and QED223 are 880nm AlGaAs LEDs encapsulated in a clear purple tinted, plastic T-1 3/4 package. ■ Chip material = AlGaAs ■ Package type: T-1 3/4 5mm lens diameter
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QED222,
QED223
880nm
QSD123/QSD124
QED222
880nm
QED22X
schematic diagram of infrared
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ST7528
Abstract: ST7528-G AGM1610A-FLB-FBW IN4148 160 segment panel specifications
Text: AZ DISPLAYS, INC. COMPLETE LCD SOLUTIONS SPECIFICATIONS FOR LIQUID CRYSTAL DISPLAY PART NUMBER: DATE: AGM1610A SERIES MAY 09, 2007 1. GENERAL SPECIFICATIONS 1-1 SCOPE: This specification covers the delivery requirements for the liquid crystal display delivered by AZ DISPLAYS,
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AGM1610A
AGM1610A-FLB-FBW
1/100duty,
ST7528-G
24HRS
96HRS
12HRS
16HRS
30mins)
ST7528
ST7528-G
AGM1610A-FLB-FBW
IN4148
160 segment panel specifications
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LN 358
Abstract: NEC FiberOptech
Text: Rev. 1.2 March 11, 2002 OD-S672 Low Voltage Drive LN-VOA LiNbO3 Variable Optical Attenuator Module FEATURES n Low Voltage Drive n Low Power Consumpition n 8-channel Arrayed APPLICATIONS n Suitable for WDM Level Adjustment n OMUX/ODMUX,OADM for DWDM system
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OD-S672
SW1-290
LN 358
NEC FiberOptech
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LN 358
Abstract: temperture and wavelength OD-S657 NEC FiberOptech
Text: Rev. 1.2 March 11, 2002 OD-S657 LN-VOA LiNbO3 Variable Optical Attenuator Module FEATURES n Super-low Power Consumption n Compact Size n 8-channel Arrayed APPLICATIONS n Suitable for WDM Level Adjustment n OMUX/ODMUX,OADM for DWDM system OMUX/ODMUX : Optical Multiplexer/Demultiplexer
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OD-S657
SW1-290
LN 358
temperture and wavelength
OD-S657
NEC FiberOptech
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HL6319G
Abstract: HL6320G Hitachi DSA0047
Text: HL6319/20G AlGaInP Laser Diodes Description The HL6319/20G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well MQW structure. They are suitable as light sources for laser levelers and optical equipment for measurement. Application • Laser levelers
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HL6319/20G
HL6319/20G
635nm
HL6319/20G:
HL6319G
HL6320G
HL6319G
HL6320G
Hitachi DSA0047
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L850-03CU
Abstract: 850nm
Text: epitex Φ5 MOLD LED LAMP L850-03CU Opto-Device & Custom LED Lead Pb Free Product – RoHS Compliant L850-03CU Infrared LED Lamp L850-03CU is an AlGaAs LED mounted on a copper made frame with a clear epoxy lens and is 50mW typ. of output power and 230mW/sr typ. of radiant Intensity.
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L850-03CU
L850-03CU
230mW/sr
850nm.
400um
400um
850nm
140K/W
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Abstract: No abstract text available
Text: epitex Φ5 MOLD LED LAMP L850D-04L6CU Opto-Device & Custom LED Lead Pb Free Product – RoHS Compliant L850D-04L6CU Infrared LED Lamp for High Radiant Intensity L850D-04L6CU is an AlGaAs LED mounted on a copper made lead frame with a clear epoxy lens.
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L850D-04L6CU
L850D-04L6CU
850nm.
850nm
J-6512.
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Untitled
Abstract: No abstract text available
Text: QEE113 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ= 940nm The QEE113 is a 940nm GaAs LED encapsulated in a medium wide angle, plastic sidelooker package. ■ Package Type = Sidelooker ■ Chip Material = GaAs ■ Matched Photosensor: QSE113
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QEE113
940nm
QEE113
940nm
QSE113
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Untitled
Abstract: No abstract text available
Text: QEE273 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ= 850nm The QEE273 is an 850nm AlGaAs LED encapsulated in a medium wide angle, thin plastic sidelooker package. ■ Package Type = Sidelooker ■ Chip Material = AlGaAs
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QEE273
850nm
QEE273
850nm
QSE213
QSE243
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L850D-03-50CU
Abstract: 850nm
Text: epitex 5 MOLD LED LAMP L850D-03-50CU Opto-Device & Custom LED Lead Pb Free Product – RoHS Compliant L850D-03-50CU Infrared LED Lamp for High Radiant Intensity L850D-03-50CU is an AlGaAs LED mounted on a copper made lead frame with a clear epoxy lens.
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L850D-03-50CU
L850D-03-50CU
850nm.
500umx500um
850nm
J-6512.
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QEE273
Abstract: QSE213 QSE243 dc870 photosensor, 850nm
Text: QEE273 Plastic Infrared Light Emitting Diode FeaturesPACKAGE DIMENSIONS Description • λ= 850nm The QEE273 is an 850nm AlGaAs LED encapsulated in a medium wide angle, thin plastic sidelooker package. ■ Package Type = Sidelooker ■ Chip Material = AlGaAs
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QEE273
850nm
QEE273
850nm
QSE213
QSE243
QSE243
dc870
photosensor, 850nm
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Untitled
Abstract: No abstract text available
Text: epitex Φ5 MOLD LED LAMP L850D-04-50L6CU Opto-Device & Custom LED Lead Pb Free Product – RoHS Compliant L850D-04-50L6CU Infrared LED Lamp for High Radiant Intensity L850D-04-50L6CU is an AlGaAs LED mounted on a copper made lead frame with a clear epoxy lens.
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L850D-04-50L6CU
L850D-04-50L6CU
850nm.
500umx500um
850nm
J-6512.
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON ST62E80 ST62T80 ilLi £TO *S 8-BIT EPROM HCMOS MCU WITH DOT MATRIX LCD DRIVER EEPROM AND A/D CONVERTER • 4.5 to 6V supply operating range ■ 8.4MHz Maximum Clock Frequency ■ -40 to+85°C Operating Temperture Range ■ Run, Wait & Stop Modes
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ST62E80
ST62T80
CQFP100-W
20mAfor
VR0B1500
ST62E80
ST62E80G1
CQFP100-W
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Untitled
Abstract: No abstract text available
Text: S G S -T H O M S O N S T 6 2 E 8 5 M n s m i i L i g ir i^ C T n G i S T 6 2 T 8 5 8-BIT EPROM HCMOS MCU WITH DOT MATRIX LCD DRIVER AND A/D CONVERTER • 4.5 to 6V supply operating range ■ 8.4MHz Maximum Clock Frequency ■ -40 to +85°C Operating Temperture Range
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PQFP80
CQFP80-W
20mAfor
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AX2030
Abstract: No abstract text available
Text: LKU HIGH EFFICIENCY RED/GREEN DUAL COLOR LAMP 04.98 " 0.196 DESCRIPTION A red and green lamp made of GaAlAs, GaP offering a changing color characteristics dependent on the direction the lamp is biased. These two light emitting diodes are mounted in a 5mm diameter dual
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Untitled
Abstract: No abstract text available
Text: M S G B 5 1 T A P HIGH EFFICIENCY RED/GREEN DUAL COLOR LAMP 04.98 " 0.196 DESCRIPTION A red and green lamp made of GaAlAs, GaP offering a changing color characteristics dependent on the direction the lamp is biased. These two light emitting diodes are mounted in a 5mm diameter dual
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Untitled
Abstract: No abstract text available
Text: MOGB39T ORANGE/ GREEN BI-COLOR LAMP DESCRIPTION 04.05 '{0.16 An orange and green lamp made of GaAsP, GaP chip offering a changing color characteristics. These two light emitting diodes are mounted in 3mm transparent lens. Lead Diseription l + Green 2 -C athode
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MOGB39T
4351G
B39T-C
M0GB39T-CURVE2
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Untitled
Abstract: No abstract text available
Text: CRO MSGB51TAP HIGH EFFICIENCY RED/GREEN DUAL COLOR LAMP DESCRIPTION A red and green lamp made of GaAlAs, GaP offering a changing color characteristics dependent on the direction the lamp is biased. These two light emitting diodes are mounted in a 5mm diameter dual
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MSGB51TAP
MSGB51
B51TAP
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Untitled
Abstract: No abstract text available
Text: DESCRIPTION CRO MGB33C MYB33C HIGH BRIGHTNESS LED LAMP MGB33C is green GaP & MYB33C is yellow GaAsP, high brightness LED lamp encapsulated in a 3mm diameter, MGB33C is green transparent lens and MYB33C is yellow. ABSOLUTE MAXIMUM RATINGS Power Dissipation @ Ta=25°C
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MGB33C
MYB33C
MYB33C
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Untitled
Abstract: No abstract text available
Text: CRO MGB33C MYB33C HIGH BRIGHTNESS LED LAMP DESCRIPTION MGB33C is green GaP & MYB33C is yellow GaAsP, high brightness LED lamp encapsulated in a 3mm diameter, MGB33C is green transparent lens and MYB33C is yellow transparent lens. • All Dimension in mm inch
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MGB33C
MYB33C
MGB33C
MYB33C
Ta-25Â
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100pta
Abstract: No abstract text available
Text: CRO MSGB39WP IGH EFF. RED/ GREEN DUAL COLOR LAMP DESCRIPTION A high efficiency red and green lamp made of GaAlAs, GaP offering a changing color characteristics dependent on the direction the lamp is biased. These two light emitting diodes are mounted in 3mm dual color, white diffused
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MSGB39WP
100pta
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