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    KEMET Corporation TEFPSA31A336MHF8R

    33.0Uf 10.0V |Kemet TEFPSA31A336MHF8R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark TEFPSA31A336MHF8R Reel 3,000
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    • 10000 $0.36
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    KEMET Corporation TEFPSA30J107M55HF8R

    100.uf 6.0V |Kemet TEFPSA30J107M55HF8R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark TEFPSA30J107M55HF8R Reel 3,000
    • 1 -
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    • 10000 $0.448
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    KEMET Corporation TEFPSA30J476M150HF8R

    47.0Uf 6.0V |Kemet TEFPSA30J476M150HF8R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark TEFPSA30J476M150HF8R Reel 3,000
    • 1 $0.388
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    • 100 $0.388
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    KEMET Corporation TEFPSA31A476M100HF8R

    47.0Uf 10.0V |Kemet TEFPSA31A476M100HF8R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark TEFPSA31A476M100HF8R Reel 3,000
    • 1 -
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    TDK-Lambda Corporation FPS1000-12 (ALTERNATE: FPS1000-12)

    Power Supply, AC-DC,12V,72A,85-265VIn, Enclosed, Pnl Mnt, Industrial,864W, FPS Series | TDK-Lambda FPS1000-12
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS FPS1000-12 (ALTERNATE: FPS1000-12) Bulk 2 4 Weeks 1
    • 1 $743.54
    • 10 $743.54
    • 100 $743.54
    • 1000 $743.54
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    TEFPS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    29070* intel

    Abstract: transistor w18 57 small
    Text: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Preliminary Datasheet Product Features High Performance — 70 ns Initial Access Speed — 14 ns Clock to Data Output Zero Wait-State Synchronous Burst Mode — 20 ns Page Mode Read Speed


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    PDF 28F320W18, 28F640W18, 28F128W18 56-Ball 32-Mbit) 64-Mbit) 128-Mbit) 29070* intel transistor w18 57 small

    vf bga

    Abstract: 29070* intel 28F3208W30
    Text: Intel 1.8 Volt Wireless Flash Memory with 3 Volt I/O and SRAM W30 28F6408W30, 28F3208W30, 28F3204W30, 28F320W30 Preliminary Datasheet Product Features • ■ ■ ■ Flash Performance — 70 ns Initial Access Speed — 25 ns Page-Mode Read Speed — 20 ns Burst-Mode Read Speed


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    PDF 28F6408W30, 28F3208W30, 28F3204W30, 28F320W30 Compa01 0100h 0000h vf bga 29070* intel 28F3208W30

    TEESVA1A106M8R

    Abstract: TEESVA1C106M8R TEPSLC TEESVJ0J106M8R TEESVA0J476M8R TEESVB TEESVA1A TEESVA1A475M8R TEPSLB21A476M8R TEPSLC1A107M12R
    Text: Product Information Lead-free tantalum chip capacitors Conductive polymer tantalum chip capacitors Ultra-low ESR/RoHS compliant conductive polymer tantalum chip capacitors PS/L series Featuring new 12 mΩ Ω ultra-low ESR model highly effective for decoupling


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    PDF ESVJ1A155M ESVD0J477M 100kHz TEFSVA30E227M8R TEESVJ1A155M8R TEESVD0J477M12R TEPSA31A336M8R TEFSVJ0G336M8R TEFSVP20G686M8R TEESVA1A106M8R TEESVA1C106M8R TEPSLC TEESVJ0J106M8R TEESVA0J476M8R TEESVB TEESVA1A TEESVA1A475M8R TEPSLB21A476M8R TEPSLC1A107M12R

    740-0007

    Abstract: 29070* intel
    Text: 1.8 Volt Intel Wireless Flash Memory W18 28F320W18, 28F640W18, 28F128W18 Preliminary Datasheet Product Features High Performance — 70 ns Initial Access Speed — 14 ns Clock to Data Output Zero Wait-State Synchronous Burst Mode — 20 ns Page Mode Read Speed


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    PDF 28F320W18, 28F640W18, 28F128W18 56-Ball 32-Mbit) 64-Mbit) 128-Mbit) 740-0007 29070* intel

    46-17000

    Abstract: A0-A21 Q0-Q15
    Text: ADVANCED INFORMATION MX28F640W30T/B 64M-BIT [4M x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES • Architecture - Bit Organization: 4,194,304 x 16 - Multiple 4Mb partitions - RWW Read While Write or RWE (Read While Erase) - Sector Erase (Sector structure : 4Kword x 8 (parameter sectors), 32Kword x 127 (main sectors)


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    PDF MX28F640W30T/B 64M-BIT 32Kword 128-bit 64-bit PM0963 46-17000 A0-A21 Q0-Q15

    8857H

    Abstract: transistor r10 P2F 28F3204W30 28F320W30 28F6408W30 28F640W30 intel DOC bba 1st transistor code p2f A14RM1
    Text: 1.8 Volt Intel Wireless Flash Memory with 3 Volt I/O and SRAM W30 28F6408W30, 28F3204W30, 28F320W30, 28F640W30 Preliminary Datasheet Product Features Flash Performance — 70 ns Initial Access Speed — 25 ns Page-Mode Read Speed — 20 ns Burst-Mode Read Speed


    Original
    PDF 28F6408W30, 28F3204W30, 28F320W30, 28F640W30 Compat-02 0100h 0000h 8857H transistor r10 P2F 28F3204W30 28F320W30 28F6408W30 28F640W30 intel DOC bba 1st transistor code p2f A14RM1

    A0-A21

    Abstract: Q0-Q15
    Text: ADVANCED INFORMATION MX28F640W18T/B 64M-BIT [4M x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY FEATURES • Architecture - Bit Organization: 4,194,304 x 16 - Multiple 4Mb partitions - RWW Read While Write or RWE (Read While Erase) - Sector Erase (Sector structure : 4Kword x 8 (parameter sectors), 32Kword x 127 (main sectors)


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    PDF MX28F640W18T/B 64M-BIT 32Kword 128-bit 64-bit APR/17/2002 OCT/17/2002 NOV/07/2002 PM0883 A0-A21 Q0-Q15