Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TE 250805 Search Results

    TE 250805 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: a Dual Interface for Flat Panel Displays AD9887 FEATURES Analog Interface 140 MSPS Maximum Conversion Rate 330 MHz Analog Bandwidth 0.5 V to 1.0 V Analog Input Range 500 ps p-p PLL Clock Jitter at 140 MSPS 3.3 V Power Supply Full Sync Processing Midscale Clamp


    Original     		PDF AD9887 INTERF30

    2ahs

    Abstract: No abstract text available
    Text: a Analog Interface for Flat Panel Displays AD9886 FEATURES Analog Interface 140 MSPS Maximum Conversion Rate 330 MHz Analog Bandwidth 0.5 V to 1.0 V Analog Input Range 500 ps p-p PLL Clock Jitter at 140 MSPS 3.3 V Power Supply Full Sync Processing Midscale Clamp for YUV Applications


    Original     		PDF AD9886 AD9886 12ENSIONS 160-Lead S-160) C02383 2ahs

    ATC600F470BT250XT

    Abstract: ATC600F241JT250XT CWCR0805 0908SQ-27NGLC Z27 transistor
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 1, 4/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of


    Original     		PDF AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 DataAFT05MS031N 4/2013Semiconductor, ATC600F470BT250XT ATC600F241JT250XT CWCR0805 0908SQ-27NGLC Z27 transistor

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MS031NR1 AFT05MS031GNR1 Designed for mobile two-way radio applications with frequencies from


    Original     		PDF AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 AFT05MS031NR1

    transistor C3866

    Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
    Text: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)


    Original     		PDF

    ATC600F241JT

    Abstract: GRM31CR61H106KA12L atc 17-25 transistor 62 Z27 transistor J103 transistor 3 pin AFT05 GRM31CR61H106K 0806SQ-5N5GLC GRM31CR61H106KA12
    Text: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of


    Original     		PDF AFT05MS031N AFT05MS031NR1 AFT05MS031GNR1 52ogo, ATC600F241JT GRM31CR61H106KA12L atc 17-25 transistor 62 Z27 transistor J103 transistor 3 pin AFT05 GRM31CR61H106K 0806SQ-5N5GLC GRM31CR61H106KA12

    NIPPON CAPACITORS

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev. 0, 12/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.


    Original     		PDF MRF6P24190H MRF6P24190HR6 NIPPON CAPACITORS

    NIPPON CAPACITORS

    Abstract: 1825 - 0148
    Text: Freescale Semiconductor Technical Data Rev. 1, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9200LR3 MRF9200LSR3 Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9200LR3 MRF9200LSR3 NIPPON CAPACITORS 1825 - 0148

    GRM55DR61H106KA88B

    Abstract: C1825C103J1RAC NIPPON CAPACITORS 2508051107Y0 A114 A115 AN1955 C101 JESD22 MRF6P24190HR6
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev. 1, 3/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.


    Original     		PDF MRF6P24190H MRF6P24190HR6 GRM55DR61H106KA88B C1825C103J1RAC NIPPON CAPACITORS 2508051107Y0 A114 A115 AN1955 C101 JESD22 MRF6P24190HR6

    NIPPON CAPACITORS

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.


    Original     		PDF MRF6P23190H MRF6P23190HR6 MRF6P23190H NIPPON CAPACITORS

    NIPPON CAPACITORS

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 0, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for 802.16 WiBro and dual mode applications with frequencies from 2300 to 2400 MHz. Suitable for Class AB feedforward and predistortion


    Original     		PDF MRF6P23190H MRF6P23190HR6 MRF6P23190H NIPPON CAPACITORS

    GRM55DR61H106KA88B

    Abstract: 2508051107Y0 NIPPON CAPACITORS A114 A115 AN1955 C101 JESD22 MRF6P23190HR6 J3001
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P23190H Rev. 2, 3/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 2300 to 2400 MHz. Suitable for WiMAX, WiBro and multicarrier amplifier applications.


    Original     		PDF MRF6P23190H MRF6P23190HR6 GRM55DR61H106KA88B 2508051107Y0 NIPPON CAPACITORS A114 A115 AN1955 C101 JESD22 MRF6P23190HR6 J3001

    capacitor 1825

    Abstract: Nippon capacitors
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600


    Original     		PDF MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085H capacitor 1825 Nippon capacitors

    K 2645 schematic

    Abstract: p 01 k 2645 K 2645 transistor A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 1, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600


    Original     		PDF MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085HR3 K 2645 schematic p 01 k 2645 K 2645 transistor A114 A115 AN1955 C101 JESD22 MRF6S27085H

    K 2645 schematic circuit

    Abstract: DBD16 2508051107Y0 A114 A115 AN1955 C101 JESD22 MRF6S27085H MRF6S27085HR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S27085H Rev. 2, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for CDMA base station applications with frequencies from 2600 to


    Original     		PDF MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085HR3 K 2645 schematic circuit DBD16 2508051107Y0 A114 A115 AN1955 C101 JESD22 MRF6S27085H

    A114

    Abstract: A115 AN1955 JESD22 MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 Nippon capacitors
    Text: Freescale Semiconductor Technical Data MRF6S27085H Rev. 0, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27085HR3 MRF6S27085HSR3 Designed for N- CDMA base station applications with frequencies from 2600 to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF6S27085H MRF6S27085HR3 MRF6S27085HSR3 MRF6S27085HR3 A114 A115 AN1955 JESD22 MRF6S27085H MRF6S27085HSR3 Nippon capacitors

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9200L Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9200LR3 MRF9200LSR3 Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9200L MRF9200LR3 MRF9200LSR3 MRF9200LR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF9200L Rev. 1, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9200LR3 MRF9200LSR3 Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9200L MRF9200LR3 MRF9200LSR3 MRF9200LR3

    NIPPON CAPACITORS

    Abstract: capacitor 1825 2508051107Y0 465B A114 A115 AN1955 JESD22 MRF9200L MRF9200LR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF9200L Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9200LR3 MRF9200LSR3 Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9200L MRF9200LR3 MRF9200LSR3 MRF9200LR3 NIPPON CAPACITORS capacitor 1825 2508051107Y0 465B A114 A115 AN1955 JESD22 MRF9200L

    NIPPON CAPACITORS

    Abstract: 2506033007Y0 2508051107Y0 465B AN1955 MRF9200LR3 MRF9200LSR3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF9200L/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF9200LR3 MRF9200LSR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with


    Original     		PDF MRF9200L/D MRF9200LR3 MRF9200LSR3 228Affirmative MRF9200LR3 NIPPON CAPACITORS 2506033007Y0 2508051107Y0 465B AN1955 MRF9200LSR3

    567 tone

    Abstract: NIPPON CAPACITORS MARKING 2299 mos 2508051107Y0 Vishay Dale 200 ohm .1 W resistors 465B A114 AN1955 JESD22 MRF9200L
    Text: Freescale Semiconductor Technical Data MRF9200L Rev. 1, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs MRF9200LR3 MRF9200LSR3 Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9200L MRF9200LR3 MRF9200LSR3 IS-95 MRF9200LR3 567 tone NIPPON CAPACITORS MARKING 2299 mos 2508051107Y0 Vishay Dale 200 ohm .1 W resistors 465B A114 AN1955 JESD22 MRF9200L

    NIPPON CAPACITORS

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF9200L Rev. 2, 8/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF9200LR3 MRF9200LSR3 Designed for broadband commercial and industrial applications with frequencies to 1000 MHz. The high gain and broadband performance of these


    Original     		PDF MRF9200L MRF9200LR3 MRF9200LSR3 MRF9200L NIPPON CAPACITORS

    kt9d

    Abstract: RS200M Quanta KT9D tc144e ut1 quanta kbc 1070 DC2321 quanta Quanta MK1 Y113M
    Text: 1 2 3 4 5 6 7 8 01 KT9D Power - Source Control A STACK LAYERS = L1 : TOP L2 : VCC L3 : IN1 Hig Speed L4 : GND L5 : IN2 ( High Speed ) L6 : BOT CPU CORE Power P/N: DAKT9DMB6A0 PAGE 34. A PCIBUSROUTING TABLE =


    Original     		PDF 400/533MHZ) C1209 C1210 kt9d RS200M Quanta KT9D tc144e ut1 quanta kbc 1070 DC2321 quanta Quanta MK1 Y113M

    Untitled

    Abstract: No abstract text available
    Text: Advance Information This document contains information informati on a product under development. The parametric information contains target parameters that are subject to change. » *v _ C O N E X A N T CN8332/CN8333 Dual/Triple E3/DS3/STS-1 Line Interface Unit


    OCR Scan     		PDF CN8332/CN8333 CN8333 N8333DSD 404a-1996 GR499, TR-TSY-000499) GR253, TA-NWT-000253)