Untitled
Abstract: No abstract text available
Text: I n ter n a tio n a l 1N935 thru S e m ic o n d u c to r , I n c . 1N940B TEM PERATUR E COM PENSATED ZEN ER REFERENCE DIODES 9 .0 V O L T N O M IN A L Z E N E R V O L T A G E MAXIMUM RATINGS Operating Temperature: Storage Tem perature: DC Power Dissipation:
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1N935
1N940B
TDDD37fl
TDDD37Ã
0GGD51H
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Untitled
Abstract: No abstract text available
Text: I nternatio n al W005M th ru S em ico n d u cto r , I n c . W10M M INIATURE SING LE PHASE BRIDGE RECTIFIER VOLTAGE: 50 to 1000 Volts CURRENT: 1.5 Amperes FEATURES: .3 7 8 M ax 9 .6 D ia ' Plastic material used carries Underwriters Laboratory recognition 94 V -0
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W005M
MIL-STD-202,
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1N3896
Abstract: LF252 1n3898
Text: I n te r n a t/ o nal 1N3896 thru S e m ic o n d u c t o r , I n c . 1N3898 FORWARD REGULATOR Multi—Chip DIODES These high speed m u lti-p e lle t diodes are used in com puter circu its and general purpose applications. They consist o f one, two, or three silicon diode chips in series, m ounted in a
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1N3896
1N3898
DO-35
TDDD37Û
1N3896
LF252
1n3898
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IN821
Abstract: No abstract text available
Text: INTERNATIONAL 1N821 SEMICONDUCTOR, INC. thru 1N829A TEM PER ATU R E C O M PEN SATED ZEN ER REFERENCE DIODES 6.2 and 6.5 5 V O L T N O M IN A L Z E N E R V O LT A G E MAXIMUM RATINGS Operating Tem perature: -55 °C to +200 0C Storage Tem perature: -55 °C to +200 °C
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1N821
1N829A
TDDD37Ã
00QDSMS
IN821
00005M
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Untitled
Abstract: No abstract text available
Text: I n ter n a tio n a l SD101A thru SD101C S e m ic o n d u c to r , I n c . SCHOTTKY BARRIER DIODES VOLTAGE - 40 TO 60 Volts CURRENT -10.0 mA FEATURES M EC H A N IC A L DATA • S chottky B arrier Junction 1 C a s e : H erm etically Sealed DO-35 :o ■ PN Junction Guard Ring
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SD101A
SD101C
DO-35
SD101A
TDDD37Ã
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