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    TD248 Search Results

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    TD248 Price and Stock

    Samtec Inc DW-20-07-T-D-248

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    DigiKey DW-20-07-T-D-248 Bulk 1
    • 1 $9.39
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    Samtec Inc DW-46-07-T-D-248

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    • 1 $15.64
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    Samtec Inc DW-50-07-T-D-248

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    DigiKey DW-50-07-T-D-248 Bulk 1
    • 1 $13.8
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    Samtec Inc DW-44-07-T-D-248

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    DigiKey DW-44-07-T-D-248 Bulk 1
    • 1 $15.03
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    Samtec Inc DW-40-07-T-D-248

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    DigiKey DW-40-07-T-D-248 Bulk 1
    • 1 $10.95
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    TD248 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TD248 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    TD248 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    TD248 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    TD248 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    TD2483 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    TD2484 Unknown Shortform Transistor PDF Datasheet Short Form PDF

    TD248 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    nec a1010

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    IC 751 1124

    Abstract: 2SC5194 2SC5194-T1 2SC5194-T2
    Text: DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS • Low Voltage Operation, Low Phase Distortion Unit: mm NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz 1.25±0.1 QUANTITY PACKING STYLE


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    2SC5194 2SC5194-T1 2SC5194-T2 IC 751 1124 2SC5194 2SC5194-T1 2SC5194-T2 PDF

    713-102

    Abstract: 2SC5194 2SC5194-T1 2SC5194-T2
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    2SC5192

    Abstract: 2SC5192-T1 2SC5192-T2 TD-2485
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
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    Untitled

    Abstract: No abstract text available
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


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    transistor 121 639 7226

    Abstract: marking 88 2SC5195 2SC5195-T1 transistor NEC 882 p
    Text: DATA SHEET SILICON TRANSISTOR 2SC5195 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWINGS • Low Voltage Operation, Low Phase Distortion Unit: mm • Low Noise 1.6±0.1 0.8±0.1 NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz


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    2SC5195 2SC5195-T1 transistor 121 639 7226 marking 88 2SC5195 2SC5195-T1 transistor NEC 882 p PDF

    E112 jfet

    Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
    Text: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261


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    LS422 LS423 LS424 LS425 LS426 LS832 LS833 LS4391 LS5911 E112 jfet siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565 PDF

    NEC 2551

    Abstract: 9033 transistor 2SC5192 2SC5192-T1 2SC5192-T2 702 Z TRANSISTOR T88 NEC TD-2485
    Text: DATA SHEET SILICON TRANSISTOR 2SC5192 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DRAWINGS • Low Voltage Operation, Low Phase Distortion Unit: mm • Low Noise +0.2 1.5 +0.2 –0.1 3 2 • Large Absolute Maximum Collector Current


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    2SC5192 2SC5192-T2 50Special: NEC 2551 9033 transistor 2SC5192 2SC5192-T1 2SC5192-T2 702 Z TRANSISTOR T88 NEC TD-2485 PDF

    NPD5564

    Abstract: NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638
    Text: Introduction Linear Integrated Systems is a U.S. based, full service semiconductor manufacturer of specialty linear products. Since 1987, we have been supplying pin for pin replacements for over 2000 discrete devices which are currently offered or were discontinued by Calogic, Interfet, Intersil, Micro Power Systems, Motorola, National, Fairchild, Phillips, and SiliconixVishay. We strive to provide our customers with the necessary options, solutions, and technology to produce leadership


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    IntegraU404 LSU405 LSU406 LS841 LS842 LS421 LS422 LS423 LS424 NPD5564 NPD5566 BFY91 IMF3958 2N3050 NF5458 Fairchild E212 MP842 J9100 SST5638 PDF

    2sc5194-t1

    Abstract: No abstract text available
    Text: DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AM PURER NPN SILICON EPITAXIALTRANSISTOR P A C K AG E D R A W IN G S FEATU RES • Low Voltage O peration, Low Phase D istortion • Low Noise Unit: mm N F = 1.5 dB TYP. @ V ce = 3 V, Ic = 7 mA, f = 2 GHz


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    2SC5194 2SC5194-T2 2sc5194-t1 PDF

    NEC 2561* D 431

    Abstract: nec d 882 p transistor transistor transistor NEC b 882 p transistor NEC D 880 TD248 transistor NEC 2561 nec 2561 le NEC 2561 transistor
    Text: DATA SHEET SILICON TRANSISTOR 2SC5195 MICROWAVE LOW NOISE AM PURER NPN SILICON EPITAXIALTRANSISTOR FEATU RES • • P A C K AG E D R A W IN G S Low Voltage O peration, Low Phase D istortion Low Noise N F = 1.5 dB TYP. IMF = 1.5 dB TYP. • Unit: mm @ V ce


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    2SC5195 2SC5195-T1 NEC 2561* D 431 nec d 882 p transistor transistor transistor NEC b 882 p transistor NEC D 880 TD248 transistor NEC 2561 nec 2561 le NEC 2561 transistor PDF

    Z 0103 NA GE 704

    Abstract: IC lc 8635 320
    Text: DATA SHEET SILICON TRANSISTOR 2SC5192 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR 4 PINS M INI MOLD PA C K AG E D R A W IN G S FEATU RES • L o w V o lta g e O p e ra tio n , L o w Phase D is to rtio n • L o w N o is e N F = 1.5 d B T YP. @ Vce = 3 V, Ic = 7


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    2SC5192 SC-61 2SC5192-T1 2SC5192-T2 Z 0103 NA GE 704 IC lc 8635 320 PDF

    e420 dual jfet

    Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
    Text: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.


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