208G
Abstract: DKH36223
Text: mpvvl n1l so +u{q0 ,~szusxq+qs-u+y,-ys, AY[U G^0<@475592 =\RYU]c cU\_UaQcdaU < /62 JQcUT e^[cQWU< 472N=> c^ 92 JQcUT SdaaU]c < 9= ,_Ua _^[U- ?YU[UScaYS bcaU]WcX \Y]0 < 4222N=> ,RUcfUU] Y]_dc + ^dc_dc- KcUU[ aUcQY]Ua ch_U < 3:AA/C8 FQaZUa ch_U < 3:AA/F4 F^Td[U <
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4222N=
208G\
4g307\\4
NYUf47
AA/C83503
AA/F43708
DKH1LK38
DKH36223.
208G
DKH36223
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jep 35
Abstract: CADU 208G DKH36223
Text: nqwwm o2m tp ,v|r1 -*t{v. tyr,rt.v,z-.zt- AY[U G^0<@475592 =\RYU]c cU\_UaQcdaU < /62 JQcUT e^[cQWU< 472N=> c^ 92 JQcUT SdaaU]c < 9= ,_Ua _^[U- ?YU[UScaYS bcaU]WcX \Y]0 < 4222N=> ,RUcfUU] Y]_dc + ^dc_dc- KcUU[ aUcQY]Ua ch_U < 3:AA/C8 FQaZUa ch_U < 3:AA/F4 F^Td[U <
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4222N=
208G\
4g307\\4
NYUf47
AA/C83503
AA/F43708
DKH1LK38
DKH36223.
jep 35
CADU
208G
DKH36223
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high power isolated bidirectional dc dc converter
Abstract: rs-422 db25 cables 422OISPR 422OISPR-3404 DB25 CONNECTOR 500W Bidirectional dc dc converter
Text: B&B ELECTRONICS 422OISPR-3404 - 1/2 2004 by B&B Electronics. All rights reserved. Model 422OISPR Reversed RS-232 to RS-422 Optically Isolated Converter With DB-25 Connectors & Surge Suppression CE The RS-232 to RS-422 converter converts unbalanced RS-232 signals to balanced RS-422 signals. The RS-422
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422OISPR-3404
422OISPR
RS-232
RS-422
DB-25
RS-422
high power isolated bidirectional dc dc converter
rs-422 db25 cables
422OISPR
DB25 CONNECTOR
500W Bidirectional dc dc converter
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DB25S
Abstract: TTL / RS 422 232TTL 422TTL DB25P TTL to RS 422 RTS16
Text: B&B ELECTRONICS 232TTL-3404 - 1/2 2004 by B&B Electronics. All rights reserved. Model 422TTL CE Four-Channel RS-422 to TTL Converter Description The 422TTL unit converts RS-422 signals to TTL signals. Two channels are used to convert from RS-422 to 0-+5 VDC
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232TTL-3404
422TTL
RS-422
422TTL
RS-422.
DB25P
DB25S
TTL / RS 422
232TTL
TTL to RS 422
RTS16
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05 3404 00
Abstract: No abstract text available
Text: S T S 3404 S amHop Microelectronics C orp. S ep 15 2005 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m W ) Max R ugged and reliable. 60 @ V G S = 10V
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OT-23
OT-23
05 3404 00
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td 3404
Abstract: 3404A
Text: S T S 3404 Green Product S amHop Microelectronics C orp. S ep 15 2005 N-C hannel E nhancement Mode Field E ffect Trans is tor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable.
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OT-23
OT-23
td 3404
3404A
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db25s
Abstract: 232TTL DB25P 14 pin ttl 232
Text: B&B ELECTRONICS 232TTL-3404 - 1/2 2004 by B&B Electronics. All rights reserved. Model 232TTL CE Four-Channel RS-232 to TTL Converter Description The 232TTL converts RS-232 to TTL levels. Two channels are used to convert from RS-232 to 0 to +5 VDC TTL signals and two channels are used to convert from 0 to +5 VDC TTL signals to RS-232. This converter supports RD,
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232TTL-3404
232TTL
RS-232
232TTL
RS-232.
DB25P
DB25S
14 pin ttl 232
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Untitled
Abstract: No abstract text available
Text: APT44GA60B APT44GA60S 600V High Speed PT IGBT TO APT44GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT44GA60B
APT44GA60S
APT44GA60S
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APT44GA60B
Abstract: APT44GA60S MIC4452
Text: APT44GA60B APT44GA60S 600V High Speed PT IGBT TO APT44GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT44GA60B
APT44GA60S
APT44GA60B
APT44GA60S
MIC4452
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APT44GA60B
Abstract: APT44GA60S MIC4452
Text: APT44GA60B APT44GA60S 600V High Speed PT IGBT TO APT44GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT44GA60B
APT44GA60S
APT44GA60B
APT44GA60S
MIC4452
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Untitled
Abstract: No abstract text available
Text: APT44GA60B APT44GA60S 600V High Speed PT IGBT TO APT44GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT44GA60B
APT44GA60S
switchin51
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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APT44GA60BD30C
Abstract: Fast Recovery Bridge Rectifier, 60A, 600V APT44GA60SD30C APT44GA60B MIC4452 rectifier bridge 300v 30a
Text: APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is TO APT44GA60SD30C -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise
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APT44GA60BD30C
APT44GA60SD30C
APT44GA60BD30C
Fast Recovery Bridge Rectifier, 60A, 600V
APT44GA60SD30C
APT44GA60B
MIC4452
rectifier bridge 300v 30a
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Untitled
Abstract: No abstract text available
Text: APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise
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APT44GA60BD30C
APT44GA60SD30C
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Untitled
Abstract: No abstract text available
Text: APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBT FEATURES APT44GA60SD30C TO -24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise
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APT44GA60BD30C
APT44GA60SD30C
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474J
Abstract: No abstract text available
Text: APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBT T APT44GA60SD30 O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT44GA60BD30
APT44GA60SD30
474J
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apt44ga60b
Abstract: No abstract text available
Text: APT44GA60B 600V High Speed PT IGBT TO -2 47 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT44GA60B
apt44ga60b
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Untitled
Abstract: No abstract text available
Text: APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBT T APT44GA60SD30 O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT44GA60BD30
APT44GA60SD30
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smd fuse marking 20
Abstract: UL 248-14 12V SMD fuse 014 IEC 68-2-58
Text: OMF 125V Quick-acting Surface Mount Fuse - High Breaking Capacity UL 248-14 formerly 198G CSA C22.2 No 248.14 (formerly 59.2M) NEW Approvals: UL recognition CSA certification Surge tolerant version for telecom: see page 162 63mA-10A 63mA-10A File #E41599
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63mA-10A
E41599
LR51172
smd fuse marking 20
UL 248-14 12V
SMD fuse 014
IEC 68-2-58
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IXGH20N50
Abstract: ixgh20n50u1 rectifier d 355 n 2000 ic 3404A
Text: I X Y S CORP 1ÖE D • ODOObTS 4 ■ T - 3 V 13 □IXYS A D V A N C E T E C H N IC A L D A TA S H E E T Data Sheet No. 3404A _ MOS1GBT with Anti-Parallel Rectifier March 1989 PART NUMBER IXGH20N50U1 F E A T U R E S :_
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IXGH20N50U1
O-247
384928IX
IXGH20N50
ixgh20n50u1
rectifier d 355 n 2000
ic 3404A
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IXGH20N50
Abstract: IXGH20N50U1 ic 3404A N-150 100V
Text: I X Y S CORP 1ÛE ß 4bôb22b OOOOLTS 4 ^ - 1 3 □IXYS ADVANCE TECHNICAL DATA S H E E T Data Sheet No. 3404A March 1989 PART NUMBER MOSIGBT with Anti-Parallel Rectifier IXGH20N50U1 • High Voltage MOSIGBT and Anti-Parallel Rectifier in One Package
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4bfib22b
384928IXYS
IXGH20N50
IXGH20N50U1
ic 3404A
N-150 100V
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Untitled
Abstract: No abstract text available
Text: PART NUMBER 151- 3404-101 1 51-3404-106 131-3404-116 ITEM BODY BRASS GOLD PL .00001 MIN OVER NICKEL PL .0 0 0 0 5 MIN OVER COPPER PL .0 0 0 0 5 MIN BRASS NICKEL PL .0001 MIN OVER COPPER PL .0 0 0 0 5 MIN BRASS NICKEL PL .0001 MIN OVER COPPER PL .0 0 0 0 5 MIN
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PW-2N
Abstract: pw-2nS pw2n
Text: MOS LSI TM S 3404 JC, TM S 3404 NC DUAL 512-BIT DYNAMIC SHIFT REGISTER m B features 3 C Two-phase dynamic logic > I 5-MHz shift rate Low power — 0.1 mW/bit at 1 MHz Power supplies — +5 V, -1 2 V Single-ended output T TL compatible — without external components
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512-BIT
PW-2N
pw-2nS
pw2n
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512-BIT
Abstract: SN7400 3404 PW01 PW02 TMS3404 TMS3404JC 05 3404 03
Text: M OS LSI TM S 3404 J C , TM S 3404 NC D U A L 512-BIT D Y N A M IC S H IFT REGISTER featu es Two-phase dynamic logic 5-MHz shift rate Low power — 0.1 m W /bit at 1 MHz Power supplies - +5 V , —12 V Single-ended output T T L compatible — without external components
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512-BIT
16-pinNC
1024-bit
SN7400
3404
PW01
PW02
TMS3404
TMS3404JC
05 3404 03
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