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    ComSIT USA TCST5133 8,400
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    TCST5133 Datasheets Context Search

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    TCST5133

    Abstract: TCST5123
    Text: TELEFUNKEN Semiconductors TCST5123/TCST5133 Transmissive Optical Sensor with Phototransistor Output Description These devices have a compact construction where the emitting light sources and the detectors are located face to face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a


    Original     		PDF TCST5123/TCST5133 D-74025 TCST5133 TCST5123

    Telefunken Phototransistor

    Abstract: TCST5123
    Text: TCST5123 Transmissive Optical Sensor with Phototransistor Output Description These devices have a compact construction where the emitting-light sources and the detectors are located faceto-face on the same optical axis. The operating wavelength is 950 nm. The detector consists of a phototransistor. Due to the special construction, the depth of the


    Original     		PDF TCST5123 D-74025 17-Jun-96 Telefunken Phototransistor TCST5123

    TEMIC K153P

    Abstract: TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910
    Text: Quality and Reliability Report 1997 TEMIC Semiconductors 07.97 Table of Contents TEMIC Quality Policy .1 Quality System .2


    Original     		PDF WN1053 WN1087-18R WN1087-TR1 WN1090 WN1125 WN1142 WN1158-TA WN1165-TR1 WN1170 WN934 TEMIC K153P TSHF5471 tfmw5380 dn1328 tdsr5156 dn904 TDSR5153 HS0038 IR sensor TLVD4900 TCDF1910

    ST2000

    Abstract: MOC211 K827P K847P TCST5133 TCMT1020 CNY70 CNY18 3c91c telefunken tcst
    Text: T em ic S e m i c o n d u c t o r s General Information Selector Guide - Alphanumeric Index M Numbers 3C91C/3C92C 79 MCT6/MCT62 270 4N25-28 88 M OC205-507 277 4N25V G /4N35V(G) 95 MOC211-213 284 M O C 215-217 291 4N 32/4N33 106 4N 35-37 113 c T TCDTl 100(G) Series


    OCR Scan     		PDF 3C91C/3C92C 4N25-28 4N25V /4N35V 32/4N33 MCT6/MCT62 OC205-507 MOC211-213 CNY18 CNY21Exi ST2000 MOC211 K827P K847P TCST5133 TCMT1020 CNY70 3c91c telefunken tcst