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    Banner Engineering Corp K50PTCKAQ

    TOUCH INDICATOR, 50MM, K50 PRO
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    DigiKey K50PTCKAQ Box 1 1
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    Banner Engineering Corp K50PTCKAQP

    TOUCH INDICATOR, 50MM, K50 PRO
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    Maxim Integrated Products MAX14713EWL+TCKA

    IC PWR DRIVER 1:2 15WLP
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    Micron Technology Inc MTFDHBA2T0TCK-AAT1AABYYES

    2200 2TB M.2 SSD - Trays (Alt: MTFDHBA2T0TCK-AAT1)
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    Avnet Americas MTFDHBA2T0TCK-AAT1AABYYES Tray 18 Weeks 1
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    Wiremold 896TCKAL-1/2

    Wire Ducting & Raceways ALUM TILE CONCENTRIC SCREW PLUG
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    Mouser Electronics 896TCKAL-1/2
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    Newark 896TCKAL-1/2 Bulk 1
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    RS 896TCKAL-1/2 Bulk 5 Weeks 1
    • 1 $82.23
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    TCKA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    IS42VS16100E

    Abstract: 42VS16100E IS42VS16100E-75BLI
    Text: IS42VS16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 133, 100, 83 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and independently • Dual internal bank controlled by A11


    Original     		PDF IS42VS16100E 4000-mil 60-ball 400-mil IS42VS16100E 42VS16100E IS42VS16100E-75BLI

    Untitled

    Abstract: No abstract text available
    Text: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm


    Original     		PDF AS4DDR232M72PBG 32Mx72 AS4DDR232M72PBG

    RT3PE600L

    Abstract: RT3PE3000L AES-128 PAC10 LG484 ProASICPLUS Flash Family FPGAs Advanced v0.1
    Text: Advance v0.1 Radiation-Tolerant ProASIC3 Low-Power SpaceFlight Flash FPGAs with Flash*Freeze Technology Features and Benefits • High-Performance, Low-Skew Global Network • Architecture Supports Ultra-High Utilization MIL-STD-883 Class B Qualified Packaging


    Original     		PDF MIL-STD-883 RT3PE600L RT3PE3000L AES-128 PAC10 LG484 ProASICPLUS Flash Family FPGAs Advanced v0.1

    SA6954

    Abstract: S29WS064N S29WS128N S29WS256N WS128N FFC00
    Text: S29WSxxxN MirrorBit Flash Family S29WS256N, S29WS128N, S29WS064N 256/128/64 Megabit 16/8/4 M x 16-Bit CMOS 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory PRELIMINARY Distinctive Characteristics Architectural Advantages „ Single 1.8 volt read, program and erase (1.70 to


    Original     		PDF S29WSxxxN S29WS256N, S29WS128N, S29WS064N 16-Bit) SA6954 S29WS064N S29WS128N S29WS256N WS128N FFC00

    Advanced Boot Block Flash

    Abstract: AES-128 CS201 CS281 CS289 AGLP125
    Text: v1.5 IGLOO PLUS Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits Low Power • • • • • 1.2 V to 1.5 V Core Voltage Support for Low Power Supports Single-Voltage System Operation 5 µW Power Consumption in Flash*Freeze Mode


    Original     		PDF 130-nm, Advanced Boot Block Flash AES-128 CS201 CS281 CS289 AGLP125

    A3P600

    Abstract: A3P060 A3P1000 A3P125 A3P250 AECQ100 AEC-Q100 FG144 FG256 FG484
    Text: v1.0 Automotive ProASIC3 Flash Family FPGAs Features and Benefits Low Power • 1.5 V Core Voltage • Support for 1.5-V-Only Systems • Low-Impedance Flash Switches High-Temperature AEC-Q100–Qualified Devices • Grade 2 105°C TA 115°C TJ • Grade 1 125°C TA (135°C TJ)


    Original     		PDF AEC-Q100 A3P600 A3P060 A3P1000 A3P125 A3P250 AECQ100 FG144 FG256 FG484

    A3PE3000L FG484

    Abstract: Actel pdf on radio emitter A3PE3000L FG144 FG256 FG324 FG484 PQ208 TDP 245 Y
    Text: v1.3 ProASIC3L Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits Low Power • Dramatic Reduction in Dynamic and Static Power Savings • 1.2 V to 1.5 V Core and I/O Voltage Support for Low Power • Low Power Consumption in Flash*Freeze Mode Allows for


    Original     		PDF 130-nm, A3PE3000L FG484 Actel pdf on radio emitter A3PE3000L FG144 FG256 FG324 FG484 PQ208 TDP 245 Y

    QN68

    Abstract: VQ100 actel part markings
    Text: Advance v0.4 ProASIC®3 nano Flash FPGAs Features and Benefits Advanced I/Os Wide Range of Features • 10 k to 250 k System Gates • Up to 36 kbits of True Dual-Port SRAM • Up to 71 User I/Os Reprogrammable Flash Technology • • • • 130-nm, 7-Layer Metal 6 Copper , Flash-Based CMOS Process


    Original     		PDF 130-nm, 128-Bit QN68 VQ100 actel part markings

    GTL33

    Abstract: CAT16-LV4F12 PAC10 JESD8-12A
    Text: 2 – IGLOOe DC and Switching Characteristics General Specifications DC and switching characteristics for –F speed grade targets are based only on simulation. The characteristics provided for the –F speed grade are subject to change after establishing FPGA


    Original     		PDF

    AFS600-FG256

    Abstract: zo 103 ma 75 607 A54 ZENER flashpro3 schematic mark AT0 Unipolar PC atx 400 P4 power supply diagram zener Diode B23 PQ208 QN108 QN180
    Text: Preliminary v1.7 Actel Fusion Mixed-Signal FPGAs Family with Optional ARM® Support Features and Benefits – Frequency: Input 1.5–350 MHz, Output 0.75–350 MHz Low Power Consumption High-Performance Reprogrammable Flash Technology • • • • • Single 3.3 V Power Supply with On-Chip 1.5 V Regulator


    Original     		PDF 130-nm, 128-Bit AFS600-FG256 zo 103 ma 75 607 A54 ZENER flashpro3 schematic mark AT0 Unipolar PC atx 400 P4 power supply diagram zener Diode B23 PQ208 QN108 QN180

    IS42S16400L

    Abstract: No abstract text available
    Text: ISSI IS42S16400L 1 Meg Bits x 16 Bits x 4 Banks 64-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 166, 133, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge PRELIMINARY


    Original     		PDF IS42S16400L 64-MBIT) IS42S16400L 16-bit 54-Pin IS42S16400L-6T 400-mil IS42S16400L-7T IS42S16400L-10T

    Untitled

    Abstract: No abstract text available
    Text: Revision 22 IGLOO Low Power Flash FPGAs with Flash*Freeze Technology Features and Benefits Low Power • • • • • 1.2 V to 1.5 V Core Voltage Support for Low Power Supports Single-Voltage System Operation 5 µW Power Consumption in Flash*Freeze Mode


    Original     		PDF

    IS42S16100F

    Abstract: No abstract text available
    Text: IS42S16100F, IS42VS16100F 512K Words x 16 Bits x 2 Banks 16Mb SDRAM FEATURES • Clock frequency: IS42S16100F: 200, 166, 143 MHz IS42VS16100F: 133, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Two banks can be operated simultaneously and


    Original     		PDF IS42S16100F, IS42VS16100F IS42S16100F: IS42VS16100F: IS42S16100F

    CAT16-LV4F12

    Abstract: PAC10 RAM512X18
    Text: 2 – ProASIC3E DC and Switching Characteristics General Specifications DC and switching characteristics for –F speed grade targets are based only on simulation. The characteristics provided for the –F speed grade are subject to change after establishing FPGA


    Original     		PDF

    AES-128

    Abstract: FG256 FG484
    Text: v2.0 IGLOOe Low-Power Flash FPGAs with Flash*Freeze Technology Features and Benefits Low Power • • • • 1.2 V to 1.5 V Core Voltage Support for Low Power Supports Single-Voltage System Operation Low-Power Active FPGA Operation Flash*Freeze Technology Enables Ultra-Low Power


    Original     		PDF 130-nm, AES-128 FG256 FG484

    A54 ZENER

    Abstract: AFS600-FG256 mark AT0 QN108 CORE8051 bipolar ROM
    Text: v2.0 Actel Fusion Family of Mixed-Signal FPGAs Features and Benefits In-System Programming ISP and Security High-Performance Reprogrammable Flash Technology Advanced Digital I/O • • • • • Secure ISP with 128-Bit AES via JTAG • FlashLock® to Secure FPGA Contents


    Original     		PDF 128-Bit 130-nm, A54 ZENER AFS600-FG256 mark AT0 QN108 CORE8051 bipolar ROM

    JESD21-C

    Abstract: E8870DH JESD79 mrf 245 E8870 JESD-21C 567-Ball
    Text: Intel 82870DH DDR Memory Hub DMH Datasheet Product Features • ■ ■ ■ ■ Two independent DDR DIMM channels per DMH. — 4 DIMMs per DDR Channel. — Registered PC1600 DDR DIMMs. Write Buffers to minimize large turnaround times. Pass through architecture for Read and


    Original     		PDF 82870DH PC1600 Tunnels88 E8870DH JESD21-C JESD79 mrf 245 E8870 JESD-21C 567-Ball

    IS42R32200C1

    Abstract: No abstract text available
    Text: ISSI IS42R32200C1 512K Bits x 32 Bits x 4 Banks 64-MBIT SYNCHRONOUS DYNAMIC RAM FEATURES • Clock frequency: 133, 100 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single 2.5V power supply


    Original     		PDF IS42R32200C1 64-MBIT) IS42R32200C1 32-bit 86-Pin

    RAM32M

    Abstract: RAM64X1D SRLC32E RAM128X1D RAM256X1S SRL32 RAM64M ROM64x1 XC6VLX75T ROM256x1
    Text: Virtex-6 FPGA Configurable Logic Block User Guide Virtex-6 FPGA CLB [optional] UG364 v1.1 September 16, 2009 [optional] Xilinx is disclosing this user guide, manual, release note, and/or specification (the "Documentation") to you solely for use in the development


    Original     		PDF UG364 RAM32M RAM64X1D SRLC32E RAM128X1D RAM256X1S SRL32 RAM64M ROM64x1 XC6VLX75T ROM256x1

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY INFORMATION L9D222G72BG3 2.2 Gb, DDR2, 32 M x 72 Integrated Module IMOD Benefits FEATURES DDR2 SDRAM Data Rate = 800,667,533 and 400Mbps Available in INDUSTRIAL, EXTENDED and MIL-TEMP Package: 16mm x 22mm – 208PBGA, 1.00mm pitch Differential Data Strobe (DQS, DQSx\) per byte


    Original     		PDF L9D222G72BG3 400Mbps 208PBGA, LDS-L9D222G72BG3-B

    f11u

    Abstract: FC 0012 TSOP 50 PIN cs-7sa CS7SA k0219 EN5055
    Text: Ordering number : EN5055 _ CMOS LSI No. 5055 LC382161T-17 IS ipîppi; 2 MEG 65536 words x 16 bits x 2 banks Synchronous DRAM J 8¡|lí¡Bí: 1 Overview Package Dimensions The LC382161 series products are 3.3 V single-voltage power supply synchronous DRAMs with a 65536-word x


    OCR Scan     		PDF EN5055 LC382161T-17 LC382161 65536-word 16-bit 50-pin f11u FC 0012 TSOP 50 PIN cs-7sa CS7SA k0219 EN5055

    LM 8002

    Abstract: amz8000 Z8001 crystal OSCILATOR 4mhz Z8000 Z8002 AmZ8
    Text: i Am8127 < AmZ8000 Clock Generator DISTINCTIVE CHARACTERISTICS Four TTL-level clocks G enerates synchronized TTL com patible clocks at 16MHz, 2M Hz and 1MHz to drive memory circuits and LSI peripheral devices. An additional TTL clock is synchronized with the CPU high-level clock for


    OCR Scan     		PDF Am8127 AmZ8000 16MHz, Am8127 03432C WF002010 LM 8002 Z8001 crystal OSCILATOR 4mhz Z8000 Z8002 AmZ8

    Untitled

    Abstract: No abstract text available
    Text: IBM13Q8734HCA 8M X 72 Registered SDRAM Module Features • 200-P in JE D E C Standard, R egistered 8-B yte Dual In-line M em ory M odule • A utom atic and controlled P recharge C om m ands • Program m able O peration: • 8M x 72 S ynchronous DRAM DIMM


    OCR Scan     		PDF IBM13Q8734HCA 200-P IBM13Q8734H

    mJI 1032

    Abstract: T522 capacitor TSOP 50 PIN ULN 232 V11J LC382161T-17 TSOP50 5B60
    Text: Ordering number: EN5055 CMOS LSI LC382161T-17 No. 5065 SA\YO 2 MEG 65536 words x 16 bits x 2 banks Synchronous DRAM Overview Package Dimensions The LC382161 series products are 3.3 V single-voltage power supply synchronous DRAMs with a 65536-word x 16-bit x 2-bank organization. These DRAMs feature a


    OCR Scan     		PDF EN5055 LC382161T-17 LC382161 65536-word 16-bit 50-pin c17G7b 0D15317 mJI 1032 T522 capacitor TSOP 50 PIN ULN 232 V11J LC382161T-17 TSOP50 5B60