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    TDK Corporation NTCDZ3SG104HC3NB

    NTC RADIAL LEAD (AXIAL U-BEND+CO
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    DigiKey NTCDZ3SG104HC3NB Bulk 388 1
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    TDK Corporation NTCDZ3HG103HC3NB

    NTC RADIAL LEAD (AXIAL U-BEND+CO
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    DigiKey NTCDZ3HG103HC3NB Bulk 209 1
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    Mouser Electronics NTCDZ3HG103HC3NB 567
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    TDK Corporation NTCDZ4AG493HC3NB

    NTC RADIAL LEAD (AXIAL U-BEND+CO
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    DigiKey NTCDZ4AG493HC3NB Bulk 198 1
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    Mouser Electronics NTCDZ4AG493HC3NB 176
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    TDK Corporation NTCDZ3LG202HC3NB

    NTC RADIAL LEAD (AXIAL U-BEND+CO
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    DigiKey NTCDZ3LG202HC3NB Bulk 190 1
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    Mouser Electronics NTCDZ3LG202HC3NB 25
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    Maxim Integrated Products MAX2070GTM+TCDZ

    IC REG
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    TCD Z Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MS-026D

    Abstract: as5sp128k32dq
    Text: COTSPEM PEM COTS AS5SP128K36DQ AS5SP128K36DQ SSRAM SSRAM SSRAM AustinSemiconductor, Semiconductor,Inc. Inc. Austin Parameter Symbol Cycle Time tCYC Cycle Time tCYC Cycle Time tCYC Clock Access Time tCD Clock Access Time tCD Clock Access Time tCD Output Enable


    Original     		PDF AS5SP128K36 MS-026D as5sp128k32dq

    tcd series

    Abstract: TCD41E2A335M tcd41e2a United Chemi-Con TCD TCD41E1E TCD30E2E104M United CHEMI-CON
    Text: TCD MULTIL AYER CERAMIC TCD Series Ⅲ Y5U Ceramic Ⅲ Radial Lead Ⅲ High CV Ⅲ ‫؀‬125؇C Maximum Temperature Actual Size The TCD series are radial lead ceramic capacitors from UCC/NCC. These capacitors have a very low ESR and impedance which makes these capacitors ideal for filtering switching power supplies and


    Original     		PDF 250VDC TCD41E2A335M TCD61E2A336M TCD41E2E684M TCD61E2E685M tcd series tcd41e2a United Chemi-Con TCD TCD41E1E TCD30E2E104M United CHEMI-CON

    United Chemi-Con TCD

    Abstract: TCD41E1H685M tcd series TCD21E2A104M jis-c-0805 TCD41E2A335M United Chemi-Con catalogue United Chemi-Con series United Chemi-Con tcd series United Chemi-Con
    Text: TCD MULTIL AYER CERAMIC TCD Series Ⅲ Y5U Ceramic Ⅲ Radial Lead Ⅲ High CV Ⅲ ‫؀‬125؇C Maximum Temperature Actual Size The TCD series are radial lead ceramic capacitors from UCC/NCC. These capacitors have a very low ESR and impedance which makes these capacitors ideal for filtering switching power supplies and


    Original     		PDF 250VDC TCD41E2A335M TCD41E2E684M TCD61E2E685M United Chemi-Con TCD TCD41E1H685M tcd series TCD21E2A104M jis-c-0805 TCD41E2A335M United Chemi-Con catalogue United Chemi-Con series United Chemi-Con tcd series United Chemi-Con

    GemPC410-FD

    Abstract: vogt "iso 7816-1" Sub-D 9-pol gempc410 ISO7816-kompatiblen
    Text: Chipkartenleser und -schreiber TCD-410-FD-CHIP-R/W-RS232 Chipkarten-Schreib-/Lesegerät als PC-Einbaumodul Hervorragende Eigenschaften: GemCore Chipset Vom Marktführer im Bereich Chipkartentechnologie Bestens geeignet zum Einbau in den 3,5 Zoll-Laufwerksschacht des PC


    Original     		PDF TCD-410-FD-CHIP-R/W-RS232 ISO7816-kompatiblen 89/336/CEE 89/336/EEC 73/23/EEC CD9004 D-08233 GemPC410-FD 0800-tastatur GemPC410-FD vogt "iso 7816-1" Sub-D 9-pol gempc410

    Untitled

    Abstract: No abstract text available
    Text: K7N403601M K7N401801M 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision History History Draft Date Remark 0.0 1. Initial document. July.06. 1998 Preliminary 0.1 1. Changed tCD,tOE from 4.0ns to 4.2ns at -75


    Original     		PDF K7N403601M K7N401801M 128Kx36 256Kx18 256Kx18-Bit

    K7N401801M

    Abstract: K7N403601M
    Text: K7N403601M K7N401801M 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision History History Draft Date Remark 0.0 1. Initial document. July.06. 1998 Preliminary 0.1 1. Changed tCD,tOE from 4.0ns to 4.2ns at -75


    Original     		PDF K7N403601M K7N401801M 128Kx36 256Kx18 256Kx18-Bit K7N401801M K7N403601M

    K7N401801M

    Abstract: K7N403601M
    Text: K7N403601M K7N401801M 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision History History Draft Date Remark 0.0 1. Initial document. July.06. 1998 Preliminary 0.1 1. Changed tCD,tOE from 4.0ns to 4.2ns at -75


    Original     		PDF K7N403601M K7N401801M 128Kx36 256Kx18 256Kx18-Bit K7N401801M K7N403601M

    KM718V849

    Abstract: KM736V749
    Text: KM736V749 KM718V849 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision History History Draft Date Remark 0.0 1. Initial document. July.06. 1998 Preliminary 0.1 1. Changed tCD,tOE from 4.0ns to 4.2ns at -75


    Original     		PDF KM736V749 KM718V849 128Kx36 256Kx18 256Kx18-Bit KM718V849 KM736V749

    Untitled

    Abstract: No abstract text available
    Text: K7M403625M K7M401825M 128Kx36 & 256Kx18 Flow-Through NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. July. 15. 1998 Preliminary 0.1 1. Changed tCD from 8.0ns to 8.5ns at -8


    Original     		PDF K7M403625M K7M401825M 128Kx36 256Kx18 256Kx18-Bit

    transistor w2d

    Abstract: ADV748
    Text: COTS PEM AS5SP1M18DQ SSRAM Austin Semiconductor, Inc. Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 Units ns ns ns ZZ CLK CE1\ I/O Gating and Control CE3\ BWx\ CONTROL BLOCK GW\ ADV ADSC\ ADSP\ MODE A0-Ax BURST CNTL. Address


    Original     		PDF AS5SP1M18DQ 200Mhz 166Mhz 133Mhz MS026-D/BHA transistor w2d ADV748

    Untitled

    Abstract: No abstract text available
    Text: K7M403625M K7M401825M 128Kx36 & 256Kx18 Flow-Through NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. July. 15. 1998 Preliminary 0.1 1. Changed tCD from 8.0ns to 8.5ns at -8


    Original     		PDF K7M403625M K7M401825M 128Kx36 256Kx18 256Kx18-Bit 1999E

    Untitled

    Abstract: No abstract text available
    Text: KM736V747 KM718V847 128Kx36 & 256Kx18 Flow-Through NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. July. 15. 1998 Preliminary 0.1 1. Changed tCD from 8.0ns to 8.5ns at -8


    Original     		PDF KM736V747 KM718V847 128Kx36 256Kx18 256Kx18-Bit

    Untitled

    Abstract: No abstract text available
    Text: KM736V747 KM718V847 128Kx36 & 256Kx18 Flow-Through NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Flow Through NtRAMTM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. July. 15. 1998 Preliminary 0.1 1. Changed tCD from 8.0ns to 8.5ns at -8


    Original     		PDF KM736V747 KM718V847 128Kx36 256Kx18 256Kx18-Bit

    KM718V849

    Abstract: KM736V749
    Text: KM736V749 KM718V849 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision History History Draft Date Remark 0.0 1. Initial document. July.06. 1998 Preliminary 0.1 1. Changed tCD,tOE from 4.0ns to 4.2ns at -75


    Original     		PDF KM736V749 KM718V849 128Kx36 256Kx18 256Kx18-Bit KM718V849 KM736V749

    part no w2d 48

    Abstract: No abstract text available
    Text: SSRAM Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 Units ns ns ns ZZ CLK CE1\ I/O Gating and Control CE3\ BWx\ CONTROL BLOCK GW\ ADV ADSC\ ADSP\ MODE A0-Ax AS5SP128K36 Rev. 1.3 09/11 BURST CNTL. Address Registers Row Decode


    Original     		PDF AS5SP128K36 AS5SP128K36 part no w2d 48

    SSRAM

    Abstract: AS5SP128K36
    Text: SSRAM Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 Units ns ns ns ZZ CLK CE1\ I/O Gating and Control CE3\ BWx\ CONTROL BLOCK GW\ ADV ADSC\ ADSP\ MODE A0-Ax AS5SP128K36 Rev. 1.6 10/13 BURST CNTL. Address Registers Row Decode


    Original     		PDF 133Mhz AS5SP128K36 A95mA SSRAM AS5SP128K36

    transistor w2d

    Abstract: No abstract text available
    Text: COTS PEM AS5SP512K18DQ SSRAM Austin Semiconductor, Inc. Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 CLK CE1\ I/O Gating and Control CE3\ CONTROL BLOCK GW\ ADV ADSC\ ADSP\ MODE A0-Ax BURST CNTL. Address Registers Row Decode


    Original     		PDF AS5SP512K18DQ MS026-D/BHA transistor w2d

    Untitled

    Abstract: No abstract text available
    Text: COTS PEM AS5SP256K36DQ SSRAM Austin Semiconductor, Inc. A A CE1\ CE2 BWd\ BWc\ BWb\ BWa\ CE3\ VDD VSS CLK GW\ BWE\ OE\ ADSC\ ADSP\ ADV\ A A Plastic Encapsulated Microcircuit 9.0Mb, 256K x 36, Synchronous SRAM Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0


    Original     		PDF AS5SP256K36DQ MS026-D/BHA

    transistor w2d

    Abstract: transistor w2a 1050C 850C
    Text: COTS PEM AS5SP512K36DQ SSRAM Austin Semiconductor, Inc. Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 CLK CE1\ I/O Gating and Control CE3\ BWx\ GW\ ADV ADSC\ ADSP\ MODE A0-Ax BURST CNTL. Address Registers Row Decode Memory Array


    Original     		PDF AS5SP512K36DQ MS026-D/BHA transistor w2d transistor w2a 1050C 850C

    transistor w2d

    Abstract: AS5SP128K36DQ
    Text: COTS PEM AS5SP128K36DQ SSRAM Austin Semiconductor, Inc. Symbol tCYC tCD tOE 200Mhz 5.0 3.0 3.0 166Mhz 6.0 3.5 3.5 133Mhz 7.5 4.0 4.0 CLK CE1\ I/O Gating and Control CE3\ BWx\ GW\ ADV ADSC\ ADSP\ MODE A0-Ax BURST CNTL. Address Registers Row Decode Memory Array


    Original     		PDF AS5SP128K36DQ 200Mhz 166Mhz 133Mhz MS026-D/BHA transistor w2d AS5SP128K36DQ

    TCD1502D

    Abstract: No abstract text available
    Text: TOSHIBA _ TCD 1502 D TOSHIBA CCD LINEAR IMAGE SENSOR CCD Charge Coupled Device TCD1 5 0 2 D The TCD1502D is a high sensitive and low dark current 5000 elements CCD image sensor. The sensor is designed for facsimile, imagescanner and


    OCR Scan     		PDF TCD1502D TCD1502D 400DPI) WDIP22-G-400-2 e/mx5000)

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA _ TOSHIBA CCD LINEAR IMAGE SENSOR TCD 1502D CCD Charge Coupled Device TCD1 5 0 2 D The TCD1502D is a high sensitive and low dark current 5000 elements CCD image sensor. The sensor is designed for facsimile, imagescanner and


    OCR Scan     		PDF 1502D TCD1502D 400DPI)

    Untitled

    Abstract: No abstract text available
    Text: KM736V747 KM718V847 128Kx36 & 256KX18 Flow-Through N/RAM Document Tills 128Kx36 & 256Kx18-Bit Flow Through N/RAM™ Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. July. 15. 1998 Prelim inary 0.1 1. Changed tCD from 8.0ns to 8.5ns at -8


    OCR Scan     		PDF KM736V747 KM718V847 128Kx36 256KX18 256Kx18-Bit 718V847

    Untitled

    Abstract: No abstract text available
    Text: KM736V747 KM718V847 128Kx36 & 256KX18 Flow-Through N/RAM Document Tills 128Kx36 & 256Kx18-Bit Flow Through N/RAM™ Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. July. 15. 1998 Prelim inary 0.1 1. Changed tCD from 8.0ns to 8.5ns at -8


    OCR Scan     		PDF KM736V747 KM718V847 128Kx36 256KX18 256Kx18-Bit 100-T -1420A