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    KM718V849 Datasheets (4)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KM718V849-10 Samsung Electronics 256K x 18 Pipelined NtRAM Original PDF
    KM718V849-67 Samsung Electronics 256K x 18 Pipelined NtRAM Original PDF
    KM718V849-75 Samsung Electronics 256K x 18 Pipelined NtRAM Original PDF
    KM718V849T-10 Samsung Electronics IC SRAM CHIP SYNC SINGLE 3.3V 4MBIT 256K x 16 5NS 100TQFP Original PDF

    KM718V849 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM718V849

    Abstract: KM736V749
    Text: KM736V749 KM718V849 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision History History Draft Date Remark 0.0 1. Initial document. July.06. 1998 Preliminary 0.1 1. Changed tCD,tOE from 4.0ns to 4.2ns at -75


    Original     		PDF KM736V749 KM718V849 128Kx36 256Kx18 256Kx18-Bit KM718V849 KM736V749

    KM718V849

    Abstract: KM736V749
    Text: KM736V749 KM718V849 128Kx36 & 256Kx18 Pipelined NtRAMTM Document Title 128Kx36 & 256Kx18-Bit Pipelined NtRAM TM Revision History History Draft Date Remark 0.0 1. Initial document. July.06. 1998 Preliminary 0.1 1. Changed tCD,tOE from 4.0ns to 4.2ns at -75


    Original     		PDF KM736V749 KM718V849 128Kx36 256Kx18 256Kx18-Bit KM718V849 KM736V749

    K7A803609B-PC25

    Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
    Text: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15


    Original     		PDF K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K7A803609B-PC25 K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20

    UM62256EM-70LL

    Abstract: UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723
    Text: Cross Reference Your Memory Provider Partnumber Brand µPD4218165 NEC µPD4218165 NEC µPD424260 NEC µPD431000A NEC µPD43256B NEC µPD43256B-B NEC µPD43256BGU-70LL NEC µPD43256BGW-70 NEC µPD441000L-B NEC µPD442000L-B NEC µPD442012L-XB NEC µPD444012L-B


    Original     		PDF PD4218165 PD424260 PD431000A PD43256B PD43256B-B PD43256BGU-70LL PD43256BGW-70 PD441000L-B PD442000L-B UM62256EM-70LL UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723

    KM62256BLG-7

    Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
    Text: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC


    Original     		PDF C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5 IS61C632A-5TQ C7C1335-7AC KM62256BLG-7 K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12

    Untitled

    Abstract: No abstract text available
    Text: KM736V749 KM718V849 128Kx36 & 256KX18 Pipelined NiRAM Document Title 128Kx36 & 256Kx18-Bit Pipelined NiRAM™ Revision History Rev.No. History Draft Date Remark 0.0 1. Initial document. July.06. 1998 Prelim inary 0.1 1. Changed tCD.tOE fr o m 4.0ns to 4.2ns at -75


    OCR Scan     		PDF KM736V749 KM718V849 128Kx36 256KX18 256Kx18-Bit

    Untitled

    Abstract: No abstract text available
    Text: KM736V749 KM718V849 128Kx36 & 256KX18 Pipelined N/RAM Document Tills 128Kx36 & 256Kx18-Bit Pipelined N/RAM™ Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. July.06. 1998 Prelim inary 0.1 1. Changed tCD.tOE from 4.0ns to 4.2ns at -75


    OCR Scan     		PDF KM736V749 KM718V849 128Kx36 256KX18 256Kx18-Bit 100-T -1420A