HD637B01VOP
Abstract: HD63701VOP HD63705VOP hd63701xop HD637A01VOP HD64F3048F16 MB8516 HD637B01YOP HD63701YOP lh57257
Text: ＡＦ−９７００ ＳＥＲＩＥＳ ＤＥＶＩＣＥ ＬＩＳＴ ＡＦ−９７０４ ＥＰＲＯＭ ＡＦ−９７０５ ＭＯＳ ＡＦ−９７０６ ＥＰＲＯＭ ＡＦ−９７０７ ＰＣ ＡＦ−９７２１ ＧＡＮＧ ＰＲＯＧＲＡＭＭＥＲ
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AF-9700
24DIP
28DIP
HD637B01VOP
HD63701VOP
HD63705VOP
hd63701xop
HD637A01VOP
HD64F3048F16
MB8516
HD637B01YOP
HD63701YOP
lh57257
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TC9800
Abstract: No abstract text available
Text: 9. Reliability Data TC9800/01, TC9802/03 Intrinsic fa ilu re rate estim atio n from life test results N u m b e r o f sam ples (pcs) E q u iv a le n t d evice hours @ 6 0 °C Ea = 0.8eV 400 N u m b er o f defects (pcs) 1 57.0 x 106 Failu re ra te* 60°C (Fit)
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TC9800/01,
TC9802/03)
105Pa
TC9800
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tc9800
Abstract: P300
Text: 8. Packing at Shipping 8.1 Packing and ordering methods TC9800 series packages DIP or SOL come loaded in m agazines. Example) TC9802 FW L - Package type - M odel name Code No mark 8.2 Packing Magazine P (DIP) FW (SOL) O o M agazine packing
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TC9800
TC9802
DIP-20-P-300A
DIP-24-P-300
20pcs
16pcs
300-mil
SOL-20-P-300
40pcs
P300
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TC9800
Abstract: TC9802P TC9802
Text: TC9802P. TC9802FW T C 9 8 0 2 is a C M O S p r o g r a m m a b le lo g ic d evice PLD ba se d o n E E P R O M cells. D e s ig n e d u s in g T o s h ib a 's o rig in a l t e c h n o lo g y , th is d e v ice fe a tu re s lo w p o w e r d issip a tio n a n d a w id e o p e r a t in g v o lta g e ra n g e (2 V to 6V), a n d is
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TC9802P.
TC9802FW
TC9800.
TC9802P,
TC9800
TC9802P
TC9802
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TC9800
Abstract: tc9802
Text: 7. Package DIP Dual In-line Package Diagram of external view(DIP20-P-300A)TC9800/01P, TC9802/03P, TC9806/07P, TC9808/09P 20pin u n it: mm T z r im z r c r w e ig h t: Diagram of external view (DIP24-P-300) TC9804/05P 53 24pin SOL (Small Outline Package)
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DIP20-P-300A
TC9800/01P,
TC9802/03P,
TC9806/07P,
TC9808/09P
20pin
DIP24-P-300)
TC9804/05P
24pin
SOL20-P-300)
TC9800
tc9802
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tc9800
Abstract: No abstract text available
Text: 3. N o t e s o n D e s i g n i n g a n d H a n d l in g C ir c u it s 3.1 Electrostatic D ischarge CMOS ICs have a very thin gate insulation oxide film. W hen a high voltage is applied to this gate electrode input of CMOS IC , the oxide film directly under the gate som etimes
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TC9800
200pF,
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tc9800
Abstract: CP1128 TC9806 TC9802
Text: 4. D e v e l o p m e n t F lo w a n d D e v e l o p m e n t S u p p o r t T o o ls 4.1 D e v e lo p m e n t F lo w Figure 4-1 shows the normal PLD development flow. When system and logic designs are complete, the design data m ust be input to the PLD development software.
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TC9800/01
TC9802/03
TC9804/0S
TC9806/07
TC9808/09
tc9800
CP1128
TC9806
TC9802
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AM 16v8
Abstract: 22V8 tc9800 TC98
Text: Product Outline 2.1 Outline of Zero Standby PLD ZPLD TC9800 Series T h e ZPLD T C 9800 se rie s consists o f CM OS P L D s based on E E P R O M cells. Z PL D s a re F P L A s, in w hich A N D a n d O R a rra y s a re p ro g ram m ab le , th u s g iv in g th e d e sig n e r freedom
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TC9800
TC9800,
TC9801,
9800P
TC9800/01
TC9804/05
TC9802/03
TC9808/09
TC9806/07
AM 16v8
22V8
TC98
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TC9800
Abstract: TC9800P
Text: INDEX 1. PLD Basics . 1.1 1.2 1.3 1.4 1.5 2. 3. W hat is a PLD ? . PLD positioning .
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TC9800
TC9802P
TC9803P
TC9804P
TC9805P
TC9806P
TC9807P
TC9808P
TC9800P
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