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    Toshiba America Electronic Components TC59WM815BFT-75

    16M X 16 DDR DRAM, 0.75 ns, 66 Pin Plastic SMT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TC59WM815BFT-75 16
    • 1 $9
    • 10 $4.5
    • 100 $4.5
    • 1000 $4.5
    • 10000 $4.5
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    TC59W Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TC59WM803BFT-70 Toshiba Original PDF
    TC59WM803BFT-75 Toshiba Original PDF
    TC59WM803BFT-80 Toshiba Original PDF
    TC59WM807BFT-70 Toshiba Original PDF
    TC59WM807BFT-75 Toshiba Original PDF
    TC59WM807BFT-80 Toshiba 8,388,608 Words x 4 Banks x 8 Bits Synchronous Dynamic RAM Original PDF
    TC59WM807BFT-85 Toshiba Original PDF
    TC59WM815BFT-70 Toshiba 4,194,304 Words x 4 Banks x 16 Bits Synchronous Dynamic RAM Original PDF
    TC59WM815BFT-75 Toshiba 4,194,304 Words x 4 Banks x 16 Bits Synchronous Dynamic RAM Original PDF
    TC59WM815BFT-80 Toshiba 4,194,304 Words x 4 Banks x 16 Bits Synchronous Dynamic RAM Original PDF

    TC59W Datasheets Context Search

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    TC59WM815BFT

    Abstract: TC59WM803BFT TC59WM807BFT Selex
    Text: TC59WM815/07/03BFT-70,-75,-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDS x 4 BANKS × 16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDS × 4 BANKS × 8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDS × 4 BANKS × 4-BITS SYNCHRONOUS DYNAMIC RAM


    Original     		PDF TC59WM815/07/03BFT-70 304-WORDS 16-BITS 608-WORDS 216-WORDS TC59WM815BFT TC59WM807BFT TC59WM803BFT Selex

    E3235

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TC59WM815/07/03BFT-70,-75,-80 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 4,194,304-WORDSX4BANKSX16-BITS SYNCHRONOUS DYNAMIC RAM 8,388,608-WORDSX4BANKSX8-BITS SYNCHRONOUS DYNAMIC RAM 16,777,216-WORDSX4BANKSX4-BITS SYNCHRONOUS DYNAMIC RAM


    OCR Scan     		PDF TC59WM815/07/03BFT-70 304-WORDSX4BANKSX16-BITS 608-WORDSX4BANKSX8-BITS 216-WORDSX4BANKSX4-BITS TC59WM815BFT TC59WM807BFT TC59WM803BFT E3235

    DD 127 D

    Abstract: No abstract text available
    Text: TOSHIBA THMD12N11 B70#75#80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD12N11B is a 16,777,216-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 4 TC59WM815BFT DRAMs on a printed circuit board.


    OCR Scan     		PDF THMD12N11 216-WORD 64-BIT THMD12N11B TC59WM815BFT 64-bit DD 127 D

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THLD25N01 B70#75#80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THLD25N01B is a 33,554,432-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 8 TC59WM815BFT DRAMs on a printed circuit board.


    OCR Scan     		PDF THLD25N01 432-WORD 64-BIT THLD25N01B TC59WM815BFT 64-bit

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THMD51E30B70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD51E30B is a 67,108,864-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of 18 TC59WM803BFT DRAMs and PLL/Registers on a printed circuit board.


    OCR Scan     		PDF THMD51E30B70 THMD51E30B 864-word 72-bit TC59WM803BFT 72-bit

    AN 7580

    Abstract: TC59WM815BFT
    Text: TOSHIBA THMD12E11 B70#75#80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 16,777,216-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD12E11B is a 16,777,216-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of 5 TC59WM815BFT DRAMs on a printed circuit board.


    OCR Scan     		PDF THMD12E11 216-WORD 72-BIT THMD12E11B TC59WM815BFT 72-bit AN 7580

    DQSO

    Abstract: TC59WM807BFT
    Text: TOSHIBA THMD25N11B70#75#80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD25N11B is a 33,554,432-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 8 TC59WM807BFT DRAMs on a printed circuit board.


    OCR Scan     		PDF THMD25N11 432-WORD 64-BIT THMD25N11B TC59WM807BFT 64-bit DQSO

    TC59WM807BFT

    Abstract: THMD25E30B70
    Text: TO SH IBA THMD25E30B70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD25E30B is a 33,554,432-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of nine TC59WM807BFT DRAMs and PLL/Registers on a printed circuit board.


    OCR Scan     		PDF THMD25E30B70 432-WORD 72-BIT THMD25E30B TC59WM807BFT 72-bit

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA T H M D 2 5N 1 1 B70f75f80 TENTATIVE TO SHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD25N11B is a 33,554,432-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 8 TC59WM807BFT DRAMs on a printed circuit board.


    OCR Scan     		PDF B70f75f80 432-WORD 64-BIT THMD25N11B TC59WM807BFT 64-bit THMD25N11B)

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA THMD51E20B70,75,80 TENTATIVE TO SHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD51E20B is a 67,108,864-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of 18 TC59WM807BFT DRAMs and PLL/Registers on a printed circuit board.


    OCR Scan     		PDF THMD51E20B70 THMD51E20B 864-word 72-bit TC59WM807BFT 72-bit i4/16

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC59W6431 FB-40#-50#-60 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT T E N T A T IV E SILICON MONOLITHIC 524,288-WORDSX4BANKSX32-BITS SYNCHRONOUS DYNAMIC RAM DESCRIPTION TC59W6431FB is a CMOS Double Data Rate synchronous dynamic random access memory organized


    OCR Scan     		PDF TC59W6431 FB-40# 288-WORDSX4BANKSX32-BITS TC59W6431FB A12-A0 TQFP100

    TC59WM815BFT

    Abstract: No abstract text available
    Text: TOSHIBA THMD12N11 B70#75#80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD12N11B is a 16,777,216-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 4 TC59WM815BFT DRAMs on a printed circuit board.


    OCR Scan     		PDF THMD12N11 216-WORD 64-BIT THMD12N11B TC59WM815BFT 64-bit

    bd4r

    Abstract: TC59WM815BFT DM160
    Text: THLD12N11B70f75f80 TOSHIBA TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THLD12N11B is a 16,777,216-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 4 TC59WM815BFT DRAMs on a printed circuit board.


    OCR Scan     		PDF THLD12N11 216-WORD 64-BIT THLD12N11B TC59WM815BFT 64-bit bd4r DM160

    TC59WM807BFT

    Abstract: THMD25E30B70 ks h 148 oa
    Text: TOSHIBA THMD25E30B70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD25E30B is a 33,554,432-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of nine TC59WM807BFT DRAMs and PLL/Registers on a printed circuit board.


    OCR Scan     		PDF THMD25E30B70 432-WORD 72-BIT THMD25E30B TC59WM807BFT 72-bit ks h 148 oa

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA THLD12N11B70f75f80 TENTATIVE TO SHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THLD12N11B is a 16,777,216-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 4 TC59WM815BFT DRAMs on a printed circuit board.


    OCR Scan     		PDF THLD12N11B70f75f80 216-WORD 64-BIT THLD12N11B TC59WM815BFT 64-bit DQO-63

    CK01, H 135

    Abstract: No abstract text available
    Text: TOSHIBA THLD12N11B70f75f80 TENTATIVE TO SHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THLD12N11B is a 16,777,216-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 4 TC59WM815BFT DRAMs on a printed circuit board.


    OCR Scan     		PDF THLD12N11B70f75f80 216-WORD 64-BIT THLD12N11B TC59WM815BFT 64-bit THLD12N11B) CK01, H 135

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA THMD51E01 B70f75f80 TENTATIVE TO SHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD51E01B is a 67,108,864-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of 18 TC59WM807BFT DRAMs on a printed circuit board.


    OCR Scan     		PDF THMD51E01 B70f75f80 864-WORD 72-BIT THMD51E01B TC59WM807BFT 72-bit

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA THMD25E11B70f75f80 TENTATIVE TO SHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD25E11B is a 33,554,432-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of 9 TC59WM807BFT DRAMs on a printed circuit board.


    OCR Scan     		PDF THMD25E11B70f75f80 432-WORD 72-BIT THMD25E11B TC59WM807BFT 72-bit DQO-63

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THMD51E01 B70#75#80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD51E01B is a 67,108,864-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of 18 TC59WM807BFT DRAMs on a printed circuit board.


    OCR Scan     		PDF THMD51E01 864-WORD 72-BIT THMD51E01B TC59WM807BFT 72-bit

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC59W M 715/07/03FT-70#-75#-80 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 2 ,0 9 7,1 5 2 -W O R D S X 4 B A N K S x 16-BITS SYNCHRONOUS D Y N A M IC RAM 4 ,1 94,3 04 -W O R D S X 4 B A N K S X 8 -B IT S SYNCHRONOUS D Y N A M IC RAM


    OCR Scan     		PDF TC59W 715/07/03FT-70# 16-BITS TC59WM715FT 152-wordsX4 TC59WM707FT TC59WM703FT

    TC59WM803BFT

    Abstract: THMD1GE2SB70
    Text: TOSHIBA THM D1GE2SB70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 134,217,728-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD1GE2SB is a 134,217,728-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of 36 TC59WM803BFT DRAMs and PLL/Registers on a printed circuit board.


    OCR Scan     		PDF THMD1GE2SB70 728-WORD 72-BIT TC59WM803BFT 72-bit

    TC59WM803BFT

    Abstract: THMD51E30B70 CK068
    Text: TOSHIBA THMD51E30B70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THMD51E30B is a 67,108,864-word by 72-bit Double Data Rate synchronous dynamic RAM module consisting of 18 TC59WM803BFT DRAMs and PLL/Registers on a printed circuit board.


    OCR Scan     		PDF THMD51E30B70 864-WORD 72-BIT 864-word THMD51E30B TC59WM803BFT 72-bit CK068

    TC59WM807BFT

    Abstract: bd4r
    Text: TOSHIBA THLD25N11B70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THLD25N11B is a 33,554,432-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 8 TC59WM807BFT DRAMs on a printed circuit board.


    OCR Scan     		PDF THLD25N11 432-WORD 64-BIT THLD25N11B TC59WM807BFT 64-bit bd4r

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THLD25N11B70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 33,554,432-WORD BY 64-BIT DDR SYNCHRONOUS DRAM MODULE DESCRIPTION The THLD25N11B is a 33,554,432-word by 64-bit Double Data Rate synchronous dynamic RAM module consisting of 8 TC59WM807BFT DRAMs on a printed circuit board.


    OCR Scan     		PDF THLD25N11B70f75f80 432-WORD 64-BIT THLD25N11B TC59WM807BFT 64-bit a1B70